World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
31
Citations
3767
World Ranking
6606
National Ranking
2156

Best Publications

  • An optically pumped 2.5 μm GeSn laser on Si operating at 110 K

    Sattar Al-Kabi;Seyed Amir Ghetmiri;Joe Margetis;Thach Pham

  • Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

    Seyed Amir Ghetmiri;Wei Du;Joe Margetis;Aboozar Mosleh

  • Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications

    Huong Tran;Huong Tran;Thach Pham;Thach Pham;Joe Margetis;Yiyin Zhou;Yiyin Zhou

  • Electrically injected GeSn lasers on Si operating up to 100 K

    Yiyin Zhou;Yuanhao Miao;Solomon Ojo;Huong Tran

  • Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K

    Joe Margetis;Sattar Al-Kabi;Wei Du;Wei Du;Wei Dou

  • Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics

    Huong Tran;Wei Du;Seyed A. Ghetmiri;Aboozar Mosleh

  • Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth

    Wei Dou;Mourad Benamara;Aboozar Mosleh;Joe Margetis

  • Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection.

    Thach Pham;Wei Du;Huong Tran;Joe Margetis

  • Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si

    Yiyin Zhou;Yiyin Zhou;Wei Dou;Wei Du;Solomon Ojo

  • Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates

    Wei Du;Yiyin Zhou;Seyed A. Ghetmiri;Aboozar Mosleh

  • Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection.

    Benjamin R. Conley;Aboozar Mosleh;Seyed Amir Ghetmiri;Wei Du

  • Competition of optical transitions between direct and indirect bandgaps in Ge1−xSnx

    Wei Du;Seyed A. Ghetmiri;Benjamin R. Conley;Aboozar Mosleh

  • Optically pumped lasing at 3 μm from compositionally graded GeSn with tin up to 22.3.

    Wei Dou;Yiyin Zhou;Joe Margetis;Seyed Amir Ghetmiri

  • Growth and Characterization of Epitaxial Ge1-XSnx Alloys and Heterostructures Using a Commercial CVD System

    Joe Margetis;Seyed Amir Ghetmiri;Wei Du;Benjamin R Conley

  • Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff

    Benjamin R. Conley;Joe Margetis;Wei Du;Huong Tran

  • Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications

    Yiyin Zhou;Wei Dou;Wei Du;Wei Du;Thach Pham

  • High performance Ge0.89Sn0.11 photodiodes for low-cost shortwave infrared imaging

    Huong Tran;Thach Pham;Wei Du;Wei Du;Yang Zhang

  • Electrically injected GeSn lasers with peak wavelength up to 27 µm

    Yiyin Zhou;Solomon Ojo;Chen-Wei Wu;Yuanhao Miao

  • Si-based Ge0.9Sn0.1 photodetector with peak responsivity of 2.85 A/W and longwave cutoff at 2.4 μm

    T.N. Pham;W. Du;B.R. Conley;J. Margetis

  • All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K

    Joe Margetis;Yiyin Zhou;Yiyin Zhou;Wei Dou;Perry C. Grant;Perry C. Grant

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