Wei Du

Best Publications

• An optically pumped 2.5 μm GeSn laser on Si operating at 110 K

  Sattar Al-Kabi;Seyed Amir Ghetmiri;Joe Margetis;Thach Pham

  245
  Citations

• Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

  Seyed Amir Ghetmiri;Wei Du;Joe Margetis;Aboozar Mosleh

  238
  Citations

• Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications

  Huong Tran;Huong Tran;Thach Pham;Thach Pham;Joe Margetis;Yiyin Zhou;Yiyin Zhou

  225
  Citations

• Electrically injected GeSn lasers on Si operating up to 100 K

  Yiyin Zhou;Yuanhao Miao;Solomon Ojo;Huong Tran

  204
  Citations

• Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K

  Joe Margetis;Sattar Al-Kabi;Wei Du;Wei Du;Wei Dou

  195
  Citations

• Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics

  Huong Tran;Wei Du;Seyed A. Ghetmiri;Aboozar Mosleh

  153
  Citations

• Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth

  Wei Dou;Mourad Benamara;Aboozar Mosleh;Joe Margetis

  150
  Citations

• Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection.

  Thach Pham;Wei Du;Huong Tran;Joe Margetis

  149
  Citations

• Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si

  Yiyin Zhou;Yiyin Zhou;Wei Dou;Wei Du;Solomon Ojo

  135
  Citations

• Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates

  Wei Du;Yiyin Zhou;Seyed A. Ghetmiri;Aboozar Mosleh

  105
  Citations

• Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection.

  Benjamin R. Conley;Aboozar Mosleh;Seyed Amir Ghetmiri;Wei Du

  103
  Citations

• Competition of optical transitions between direct and indirect bandgaps in Ge1−xSnx

  Wei Du;Seyed A. Ghetmiri;Benjamin R. Conley;Aboozar Mosleh

  100
  Citations

• Optically pumped lasing at 3 μm from compositionally graded GeSn with tin up to 22.3.

  Wei Dou;Yiyin Zhou;Joe Margetis;Seyed Amir Ghetmiri

  98
  Citations

• Growth and Characterization of Epitaxial Ge1-XSnx Alloys and Heterostructures Using a Commercial CVD System

  Joe Margetis;Seyed Amir Ghetmiri;Wei Du;Benjamin R Conley

  94
  Citations

• Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff

  Benjamin R. Conley;Joe Margetis;Wei Du;Huong Tran

  92
  Citations

• Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications

  Yiyin Zhou;Wei Dou;Wei Du;Wei Du;Thach Pham

  92
  Citations

• High performance Ge0.89Sn0.11 photodiodes for low-cost shortwave infrared imaging

  Huong Tran;Thach Pham;Wei Du;Wei Du;Yang Zhang

  79
  Citations

• Electrically injected GeSn lasers with peak wavelength up to 27 µm

  Yiyin Zhou;Solomon Ojo;Chen-Wei Wu;Yuanhao Miao

  69
  Citations

• Si-based Ge0.9Sn0.1 photodetector with peak responsivity of 2.85 A/W and longwave cutoff at 2.4 μm

  T.N. Pham;W. Du;B.R. Conley;J. Margetis

  59
  Citations

• All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K

  Joe Margetis;Yiyin Zhou;Yiyin Zhou;Wei Dou;Perry C. Grant;Perry C. Grant

  49
  Citations