Wei Du

Wei Du publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Wei Du sits on this spectrum.

Wei Du D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Wei Du sits on this spectrum.

Best Publications

• An optically pumped 2.5 μm GeSn laser on Si operating at 110 K

  Sattar Al-Kabi;Seyed Amir Ghetmiri;Joe Margetis;Thach Pham

  245
  Citations

• Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

  Seyed Amir Ghetmiri;Wei Du;Joe Margetis;Aboozar Mosleh

  238
  Citations

• Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications

  Huong Tran;Huong Tran;Thach Pham;Thach Pham;Joe Margetis;Yiyin Zhou;Yiyin Zhou

  225
  Citations

• Electrically injected GeSn lasers on Si operating up to 100 K

  Yiyin Zhou;Yuanhao Miao;Solomon Ojo;Huong Tran

  204
  Citations

• Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K

  Joe Margetis;Sattar Al-Kabi;Wei Du;Wei Du;Wei Dou

  195
  Citations

• Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics

  Huong Tran;Wei Du;Seyed A. Ghetmiri;Aboozar Mosleh

  153
  Citations

• Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth

  Wei Dou;Mourad Benamara;Aboozar Mosleh;Joe Margetis

  150
  Citations

• Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection.

  Thach Pham;Wei Du;Huong Tran;Joe Margetis

  149
  Citations

• Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si

  Yiyin Zhou;Yiyin Zhou;Wei Dou;Wei Du;Solomon Ojo

  135
  Citations

• Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates

  Wei Du;Yiyin Zhou;Seyed A. Ghetmiri;Aboozar Mosleh

  105
  Citations

• Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection.

  Benjamin R. Conley;Aboozar Mosleh;Seyed Amir Ghetmiri;Wei Du

  103
  Citations

• Competition of optical transitions between direct and indirect bandgaps in Ge1−xSnx

  Wei Du;Seyed A. Ghetmiri;Benjamin R. Conley;Aboozar Mosleh

  100
  Citations

• Optically pumped lasing at 3 μm from compositionally graded GeSn with tin up to 22.3.

  Wei Dou;Yiyin Zhou;Joe Margetis;Seyed Amir Ghetmiri

  98
  Citations

• Growth and Characterization of Epitaxial Ge1-XSnx Alloys and Heterostructures Using a Commercial CVD System

  Joe Margetis;Seyed Amir Ghetmiri;Wei Du;Benjamin R Conley

  94
  Citations

• Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff

  Benjamin R. Conley;Joe Margetis;Wei Du;Huong Tran

  92
  Citations

• Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications

  Yiyin Zhou;Wei Dou;Wei Du;Wei Du;Thach Pham

  92
  Citations

• High performance Ge0.89Sn0.11 photodiodes for low-cost shortwave infrared imaging

  Huong Tran;Thach Pham;Wei Du;Wei Du;Yang Zhang

  79
  Citations

• Electrically injected GeSn lasers with peak wavelength up to 27 µm

  Yiyin Zhou;Solomon Ojo;Chen-Wei Wu;Yuanhao Miao

  69
  Citations

• Si-based Ge0.9Sn0.1 photodetector with peak responsivity of 2.85 A/W and longwave cutoff at 2.4 μm

  T.N. Pham;W. Du;B.R. Conley;J. Margetis

  59
  Citations

• All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K

  Joe Margetis;Yiyin Zhou;Yiyin Zhou;Wei Dou;Perry C. Grant;Perry C. Grant

  49
  Citations