World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
39
Citations
7836
World Ranking
4620
National Ranking
75

Hans Sigg publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Hans Sigg sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 218 publications — 35th percentile

35% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Hans Sigg D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Hans Sigg sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 39 D-Index — 33rd percentile

33% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Hans Sigg is affiliated with the Paul Scherrer Institute in Switzerland and engages in research primarily within the fields of Engineering, Physics and Astronomy, and Materials Science. Their work encompasses several specialized subfields, including Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, Electronic, Optical and Magnetic Materials, Biomedical Engineering, and General Health Professions.

Their scientific investigations span a variety of topics, with a focus on Photonic and Optical Devices, Semiconductor Quantum Structures and Devices, Magnetism in coordination complexes, Advanced Chemical Physics Studies, Terahertz technology and applications, Plasmonic and Surface Plasmon Research, and Metamaterials and Metasurfaces Applications.

Recent publications by Hans Sigg include:

  • Ultrafast and Low-Threshold THz Mode Switching of Two-Dimensional Nonlinear Metamaterials, 2022, Nano Letters
  • Investigation of lasing in highly strained germanium at the crossover to direct band gap, 2022, HAL (Le Centre pour la Communication Scientifique Directe)
  • Precise determination of the low-energy electronuclear Hamiltonian of LiY1−xHoxF4, 2022, Physical review. B./Physical review. B
  • Investigation of lasing in highly strained germanium at the crossover to direct band gap, 2022, Physical Review Research
  • Taking advantage of multiplet structure for lineshape analysis in Fourier space, 2020, arXiv (Cornell University)

The scientist often collaborates with a number of frequent co-authors, including Adrian Beckert, G. Aeppli, Vincent Reboud, V. Calvo, and A. Chelnokov.

Hans Sigg's work has appeared in several publication venues, notably arXiv (Cornell University), Nano Letters, HAL (Le Centre pour la Communication Scientifique Directe), Physical review. B./Physical review. B, and Physical Review Research.

Best Publications

  • Lasing in direct-bandgap GeSn alloy grown on Si

    S. Wirths;R. Geiger;R. Geiger;N. von den Driesch;G. Mussler

  • Analysis of enhanced light emission from highly strained germanium microbridges

    M. J. Süess;M. J. Süess;R. Geiger;R. A. Minamisawa;G. Schiefler;G. Schiefler

  • The refractive index of AlxGa1−xAs below the band gap: Accurate determination and empirical modeling

    S. Gehrsitz;F. K. Reinhart;C. Gourgon;N. Herres

  • Intersubband electroluminescence from silicon-based quantum cascade structures.

    G. Dehlinger;L. Diehl;U. Gennser;H. Sigg

  • Optically Pumped GeSn Microdisk Lasers on Si

    Daniela Stange;Stephan Wirths;Richard Geiger;Christian Schulte-Braucks

  • Three-dimensional Si/Ge quantum dot crystals.

    Detlev Grützmacher;Thomas Fromherz;Christian Dais;Julian Stangl

  • Bilayer Al wire-grids as broadband and high-performance polarizers

    Yasin Ekinci;Harun H. Solak;Christian David;Hans Sigg

  • Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μm up to 180 K

    V. Reboud;A. Gassenq;N. Pauc;J. Aubin

  • Top-down fabricated silicon nanowires under tensile elastic strain up to 4.5%

    Renato A. Minamisawa;Martin J. Süess;Ralph Spolenak;Jérome Faist

  • Characterisation of rare earth selective emitters for thermophotovoltaic applications

    B. Bitnar;W. Durisch;J.-C. Mayor;H. Sigg

  • GeSn Lasers Covering a Wide Wavelength Range Thanks to Uniaxial Tensile Strain

    Jérémie Chrétien;Nicolas Pauc;Francesco Armand Pilon;Francesco Armand Pilon;Mathieu Bertrand

  • Electroluminescence from strain-compensated Si0.2Ge0.8/Si quantum-cascade structures based on a bound-to-continuum transition

    L. Diehl;S. Menteşe;E. Müller;D. Grützmacher

  • Group IV direct band gap photonics: Methods, Challenges and Opportunities

    Richard Geiger;Thomas Zabel;Hans Sigg

  • Lasing in strained germanium microbridges.

    F. T. Armand Pilon;F. T. Armand Pilon;A. Lyasota;Y.-M. Niquet;V. Reboud

  • Plasmonic Radiance: Probing Structure at the Ångström Scale with Visible Light

    Benjamin Gallinet;Thomas Siegfried;Hans Sigg;Peter Nordlander

  • Interface-roughness-induced broadening of intersubband electroluminescence in p-SiGe and n-GaInAs∕AlInAs quantum-cascade structures

    S. Tsujino;A. Borak;E. Müller;M. Scheinert

  • Direct-gap gain and optical absorption in germanium correlated to the density of photoexcited carriers, doping, and strain.

    Lee Carroll;Peter Friedli;Stefan Neuenschwander;Hans Sigg

  • GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers

    Daniela Stange;Nils von den Driesch;Nils von den Driesch;Thomas Zabel;Francesco Armand-Pilon

  • Excess carrier lifetimes in Ge layers on Si

    R. Geiger;J. Frigerio;M.J. Süess;D. Chrastina

  • Engineering metal adhesion layers that do not deteriorate plasmon resonances.

    Thomas Siegfried;Yasin Ekinci;Olivier J. F. Martin;Hans Sigg

  • Ultrafast nonlinear optical response of photoexcited Ge/SiGe quantum wells: Evidence for a femtosecond transient population inversion

    C. Lange;N. S. Köster;S. Chatterjee;H. Sigg

  • 1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applications

    A. Gassenq;K. Guilloy;G. Osvaldo Dias;N. Pauc

  • Gap plasmons and near-field enhancement in closely packed sub-10 nm gap resonators.

    Thomas Siegfried;Yasin Ekinci;Olivier J. F. Martin;Hans Sigg

  • Four-wave mixing in a quantum cascade laser amplifier

    Peter Friedli;Hans Sigg;Borislav Hinkov;Andreas Hugi

Frequent Co-Authors

Jérôme Faist
Jérôme Faist ETH Zurich
Detlev Grützmacher
Detlev Grützmacher Forschungszentrum Jülich
Giovanni Isella
Giovanni Isella Polytechnic University of Milan
Zoran Ikonic
Zoran Ikonic University of Leeds
Ralph Spolenak
Ralph Spolenak ETH Zurich
Olivier J. F. Martin
Olivier J. F. Martin École Polytechnique Fédérale de Lausanne
Yasin Ekinci
Yasin Ekinci Paul Scherrer Institute
H. von Känel
H. von Känel ETH Zurich
Klaus Ensslin
Klaus Ensslin ETH Zurich

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