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Hans Sigg

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 39 4620 4435 75 72 218 7836

Hans Sigg publications per year

The chart shows the history of publications by Hans Sigg between 1982 and 2022, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Hans Sigg published across 41 years, from 1982 to 2022, averaging 6 papers a year. Output peaked at 18 publications in 2015. 8 of the 248 publications appeared in the last two years.

No. of publications
5 10 15
Bar chart. Horizontal axis: year, 1982 to 2022. Vertical axis: number of publications, 0 to 18. Peak 18 publications in 2015. 1982: 1 publication 1983: 1 publication 1984: 3 publications 1985: 1 publication 1986: 1 publication 1987: 2 publications 1988: 2 publications 1989: 2 publications 1990: 3 publications 1991: 2 publications 1992: 6 publications 1993: 1 publication 1994: 4 publications 1995: 2 publications 1996: 3 publications 1997: 3 publications 1998: 3 publications 1999: 1 publication 2000: 10 publications 2001: 4 publications 2002: 7 publications 2003: 14 publications 2004: 8 publications 2005: 10 publications 2006: 6 publications 2007: 5 publications 2008: 2 publications 2009: 8 publications 2010: 6 publications 2011: 9 publications 2012: 9 publications 2013: 16 publications 2014: 15 publications 2015: 18 publications 2016: 15 publications 2017: 14 publications 2018: 8 publications 2019: 12 publications 2020: 3 publications 2021: 3 publications 2022: 5 publications
1982 2022

248 publications in total across all disciplines

View publications per year as a table
Hans Sigg: publications per year, 1982 to 2022
Year Publications
1982 1
1983 1
1984 3
1985 1
1986 1
1987 2
1988 2
1989 2
1990 3
1991 2
1992 6
1993 1
1994 4
1995 2
1996 3
1997 3
1998 3
1999 1
2000 10
2001 4
2002 7
2003 14
2004 8
2005 10
2006 6
2007 5
2008 2
2009 8
2010 6
2011 9
2012 9
2013 16
2014 15
2015 18
2016 15
2017 14
2018 8
2019 12
2020 3
2021 3
2022 5
Total 248
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Hans Sigg publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Hans Sigg sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 214–233 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 218 publications — 35th percentile

35% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431 218
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Hans Sigg D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Hans Sigg sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 39 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 39 D-Index — 33rd percentile

33% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214 39
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Overview

Hans Sigg is affiliated with the Paul Scherrer Institute in Switzerland and engages in research primarily within the fields of Engineering, Physics and Astronomy, and Materials Science. Their work encompasses several specialized subfields, including Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, Electronic, Optical and Magnetic Materials, Biomedical Engineering, and General Health Professions.

Their scientific investigations span a variety of topics, with a focus on Photonic and Optical Devices, Semiconductor Quantum Structures and Devices, Magnetism in coordination complexes, Advanced Chemical Physics Studies, Terahertz technology and applications, Plasmonic and Surface Plasmon Research, and Metamaterials and Metasurfaces Applications.

Recent publications by Hans Sigg include:

  • Ultrafast and Low-Threshold THz Mode Switching of Two-Dimensional Nonlinear Metamaterials, 2022, Nano Letters
  • Investigation of lasing in highly strained germanium at the crossover to direct band gap, 2022, HAL (Le Centre pour la Communication Scientifique Directe)
  • Precise determination of the low-energy electronuclear Hamiltonian of LiY1−xHoxF4, 2022, Physical review. B./Physical review. B
  • Investigation of lasing in highly strained germanium at the crossover to direct band gap, 2022, Physical Review Research
  • Taking advantage of multiplet structure for lineshape analysis in Fourier space, 2020, arXiv (Cornell University)

The scientist often collaborates with a number of frequent co-authors, including Adrian Beckert, G. Aeppli, Vincent Reboud, V. Calvo, and A. Chelnokov.

Hans Sigg's work has appeared in several publication venues, notably arXiv (Cornell University), Nano Letters, HAL (Le Centre pour la Communication Scientifique Directe), Physical review. B./Physical review. B, and Physical Review Research.

Best Publications

  • Lasing in direct-bandgap GeSn alloy grown on Si

    S. Wirths;R. Geiger;R. Geiger;N. von den Driesch;G. Mussler

  • Analysis of enhanced light emission from highly strained germanium microbridges

    M. J. Süess;M. J. Süess;R. Geiger;R. A. Minamisawa;G. Schiefler;G. Schiefler

  • The refractive index of AlxGa1−xAs below the band gap: Accurate determination and empirical modeling

    S. Gehrsitz;F. K. Reinhart;C. Gourgon;N. Herres

  • Intersubband electroluminescence from silicon-based quantum cascade structures.

    G. Dehlinger;L. Diehl;U. Gennser;H. Sigg

  • Optically Pumped GeSn Microdisk Lasers on Si

    Daniela Stange;Stephan Wirths;Richard Geiger;Christian Schulte-Braucks

  • Three-dimensional Si/Ge quantum dot crystals.

    Detlev Grützmacher;Thomas Fromherz;Christian Dais;Julian Stangl

  • Bilayer Al wire-grids as broadband and high-performance polarizers

    Yasin Ekinci;Harun H. Solak;Christian David;Hans Sigg

  • Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μm up to 180 K

    V. Reboud;A. Gassenq;N. Pauc;J. Aubin

  • Top-down fabricated silicon nanowires under tensile elastic strain up to 4.5%

    Renato A. Minamisawa;Martin J. Süess;Ralph Spolenak;Jérome Faist

  • Characterisation of rare earth selective emitters for thermophotovoltaic applications

    B. Bitnar;W. Durisch;J.-C. Mayor;H. Sigg

  • GeSn Lasers Covering a Wide Wavelength Range Thanks to Uniaxial Tensile Strain

    Jérémie Chrétien;Nicolas Pauc;Francesco Armand Pilon;Francesco Armand Pilon;Mathieu Bertrand

  • Electroluminescence from strain-compensated Si0.2Ge0.8/Si quantum-cascade structures based on a bound-to-continuum transition

    L. Diehl;S. Menteşe;E. Müller;D. Grützmacher

  • Group IV direct band gap photonics: Methods, Challenges and Opportunities

    Richard Geiger;Thomas Zabel;Hans Sigg

  • Lasing in strained germanium microbridges.

    F. T. Armand Pilon;F. T. Armand Pilon;A. Lyasota;Y.-M. Niquet;V. Reboud

  • Plasmonic Radiance: Probing Structure at the Ångström Scale with Visible Light

    Benjamin Gallinet;Thomas Siegfried;Hans Sigg;Peter Nordlander

  • Interface-roughness-induced broadening of intersubband electroluminescence in p-SiGe and n-GaInAs∕AlInAs quantum-cascade structures

    S. Tsujino;A. Borak;E. Müller;M. Scheinert

  • Direct-gap gain and optical absorption in germanium correlated to the density of photoexcited carriers, doping, and strain.

    Lee Carroll;Peter Friedli;Stefan Neuenschwander;Hans Sigg

  • GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers

    Daniela Stange;Nils von den Driesch;Nils von den Driesch;Thomas Zabel;Francesco Armand-Pilon

  • Excess carrier lifetimes in Ge layers on Si

    R. Geiger;J. Frigerio;M.J. Süess;D. Chrastina

  • Engineering metal adhesion layers that do not deteriorate plasmon resonances.

    Thomas Siegfried;Yasin Ekinci;Olivier J. F. Martin;Hans Sigg

  • Ultrafast nonlinear optical response of photoexcited Ge/SiGe quantum wells: Evidence for a femtosecond transient population inversion

    C. Lange;N. S. Köster;S. Chatterjee;H. Sigg

  • 1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applications

    A. Gassenq;K. Guilloy;G. Osvaldo Dias;N. Pauc

  • Gap plasmons and near-field enhancement in closely packed sub-10 nm gap resonators.

    Thomas Siegfried;Yasin Ekinci;Olivier J. F. Martin;Hans Sigg

  • Four-wave mixing in a quantum cascade laser amplifier

    Peter Friedli;Hans Sigg;Borislav Hinkov;Andreas Hugi

Frequent Co-Authors

Jérôme Faist
Jérôme Faist ETH Zurich
Detlev Grützmacher
Detlev Grützmacher Forschungszentrum Jülich
J. M. Hartmann
J. M. Hartmann CEA LETI
Giovanni Isella
Giovanni Isella Polytechnic University of Milan
Zoran Ikonic
Zoran Ikonic University of Leeds
Ralph Spolenak
Ralph Spolenak ETH Zurich
Olivier J. F. Martin
Olivier J. F. Martin École Polytechnique Fédérale de Lausanne
Yasin Ekinci
Yasin Ekinci Paul Scherrer Institute
H. von Känel
H. von Känel ETH Zurich
Klaus Ensslin
Klaus Ensslin ETH Zurich

External Links

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Best Scientists Citing Hans Sigg

Giovanni Isella

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Publications: 66

Zoran Ikonic

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Publications: 61

Shui-Qing Yu

Shui-Qing Yu

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Publications: 59

Wei Du

Wei Du

University of Arkansas at Fayetteville

Publications: 54

Greg Sun

Greg Sun

University of Massachusetts Boston

Publications: 54

Richard A. Soref

Richard A. Soref

University of Massachusetts Boston

Publications: 52

Giovanni Capellini

Giovanni Capellini

Roma Tre University

Publications: 49

Detlev Grützmacher

Detlev Grützmacher

Forschungszentrum Jülich

Publications: 47

Jérôme Faist

Jérôme Faist

ETH Zurich

Publications: 46

Douglas J. Paul

Douglas J. Paul

University of Glasgow

Publications: 43

Chuan Seng Tan

Chuan Seng Tan

Nanyang Technological University

Publications: 38

J. M. Hartmann

J. M. Hartmann

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Publications: 35

John Tolle

John Tolle

Arizona State University

Publications: 31

Jifeng Liu

Jifeng Liu

Dartmouth College

Publications: 30

Krishna C. Saraswat

Krishna C. Saraswat

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Publications: 27

Olivier J. F. Martin

Olivier J. F. Martin

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Publications: 26

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