World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
39
Citations
7836
World Ranking
4620
National Ranking
75

Overview

Hans Sigg is affiliated with the Paul Scherrer Institute in Switzerland and engages in research primarily within the fields of Engineering, Physics and Astronomy, and Materials Science. Their work encompasses several specialized subfields, including Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, Electronic, Optical and Magnetic Materials, Biomedical Engineering, and General Health Professions.

Their scientific investigations span a variety of topics, with a focus on Photonic and Optical Devices, Semiconductor Quantum Structures and Devices, Magnetism in coordination complexes, Advanced Chemical Physics Studies, Terahertz technology and applications, Plasmonic and Surface Plasmon Research, and Metamaterials and Metasurfaces Applications.

Recent publications by Hans Sigg include:

  • Ultrafast and Low-Threshold THz Mode Switching of Two-Dimensional Nonlinear Metamaterials, 2022, Nano Letters
  • Investigation of lasing in highly strained germanium at the crossover to direct band gap, 2022, HAL (Le Centre pour la Communication Scientifique Directe)
  • Precise determination of the low-energy electronuclear Hamiltonian of LiY1−xHoxF4, 2022, Physical review. B./Physical review. B
  • Investigation of lasing in highly strained germanium at the crossover to direct band gap, 2022, Physical Review Research
  • Taking advantage of multiplet structure for lineshape analysis in Fourier space, 2020, arXiv (Cornell University)

The scientist often collaborates with a number of frequent co-authors, including Adrian Beckert, G. Aeppli, Vincent Reboud, V. Calvo, and A. Chelnokov.

Hans Sigg's work has appeared in several publication venues, notably arXiv (Cornell University), Nano Letters, HAL (Le Centre pour la Communication Scientifique Directe), Physical review. B./Physical review. B, and Physical Review Research.

Best Publications

  • Lasing in direct-bandgap GeSn alloy grown on Si

    S. Wirths;R. Geiger;R. Geiger;N. von den Driesch;G. Mussler

  • Analysis of enhanced light emission from highly strained germanium microbridges

    M. J. Süess;M. J. Süess;R. Geiger;R. A. Minamisawa;G. Schiefler;G. Schiefler

  • The refractive index of AlxGa1−xAs below the band gap: Accurate determination and empirical modeling

    S. Gehrsitz;F. K. Reinhart;C. Gourgon;N. Herres

  • Intersubband electroluminescence from silicon-based quantum cascade structures.

    G. Dehlinger;L. Diehl;U. Gennser;H. Sigg

  • Optically Pumped GeSn Microdisk Lasers on Si

    Daniela Stange;Stephan Wirths;Richard Geiger;Christian Schulte-Braucks

  • Three-dimensional Si/Ge quantum dot crystals.

    Detlev Grützmacher;Thomas Fromherz;Christian Dais;Julian Stangl

  • Bilayer Al wire-grids as broadband and high-performance polarizers

    Yasin Ekinci;Harun H. Solak;Christian David;Hans Sigg

  • Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μm up to 180 K

    V. Reboud;A. Gassenq;N. Pauc;J. Aubin

  • Top-down fabricated silicon nanowires under tensile elastic strain up to 4.5%

    Renato A. Minamisawa;Martin J. Süess;Ralph Spolenak;Jérome Faist

  • Characterisation of rare earth selective emitters for thermophotovoltaic applications

    B. Bitnar;W. Durisch;J.-C. Mayor;H. Sigg

  • GeSn Lasers Covering a Wide Wavelength Range Thanks to Uniaxial Tensile Strain

    Jérémie Chrétien;Nicolas Pauc;Francesco Armand Pilon;Francesco Armand Pilon;Mathieu Bertrand

  • Electroluminescence from strain-compensated Si0.2Ge0.8/Si quantum-cascade structures based on a bound-to-continuum transition

    L. Diehl;S. Menteşe;E. Müller;D. Grützmacher

  • Group IV direct band gap photonics: Methods, Challenges and Opportunities

    Richard Geiger;Thomas Zabel;Hans Sigg

  • Lasing in strained germanium microbridges.

    F. T. Armand Pilon;F. T. Armand Pilon;A. Lyasota;Y.-M. Niquet;V. Reboud

  • Plasmonic Radiance: Probing Structure at the Ångström Scale with Visible Light

    Benjamin Gallinet;Thomas Siegfried;Hans Sigg;Peter Nordlander

  • Interface-roughness-induced broadening of intersubband electroluminescence in p-SiGe and n-GaInAs∕AlInAs quantum-cascade structures

    S. Tsujino;A. Borak;E. Müller;M. Scheinert

  • Direct-gap gain and optical absorption in germanium correlated to the density of photoexcited carriers, doping, and strain.

    Lee Carroll;Peter Friedli;Stefan Neuenschwander;Hans Sigg

  • GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers

    Daniela Stange;Nils von den Driesch;Nils von den Driesch;Thomas Zabel;Francesco Armand-Pilon

  • Excess carrier lifetimes in Ge layers on Si

    R. Geiger;J. Frigerio;M.J. Süess;D. Chrastina

  • Engineering metal adhesion layers that do not deteriorate plasmon resonances.

    Thomas Siegfried;Yasin Ekinci;Olivier J. F. Martin;Hans Sigg

  • Ultrafast nonlinear optical response of photoexcited Ge/SiGe quantum wells: Evidence for a femtosecond transient population inversion

    C. Lange;N. S. Köster;S. Chatterjee;H. Sigg

  • 1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applications

    A. Gassenq;K. Guilloy;G. Osvaldo Dias;N. Pauc

  • Gap plasmons and near-field enhancement in closely packed sub-10 nm gap resonators.

    Thomas Siegfried;Yasin Ekinci;Olivier J. F. Martin;Hans Sigg

  • Four-wave mixing in a quantum cascade laser amplifier

    Peter Friedli;Hans Sigg;Borislav Hinkov;Andreas Hugi

Frequent Co-Authors

Detlev Grützmacher
Detlev Grützmacher Forschungszentrum Jülich
Giovanni Isella
Giovanni Isella Polytechnic University of Milan
Zoran Ikonic
Zoran Ikonic University of Leeds
Ralph Spolenak
Ralph Spolenak ETH Zurich
Yasin Ekinci
Yasin Ekinci Paul Scherrer Institute
Olivier J. F. Martin
Olivier J. F. Martin École Polytechnique Fédérale de Lausanne
H. von Känel
H. von Känel ETH Zurich
Harun H. Solak
Harun H. Solak Paul Scherrer Institute
S. Mantl
S. Mantl Forschungszentrum Jülich

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