The chart shows the distribution of publications by all Research.com ranked scientists in the field of Physics in 2026. The highlighted bar marks where Klaus Ensslin sits on this spectrum.
This scientist: 687 publications — 77th percentile
77% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,469 publications or more.
The chart shows the D-index (discipline H-index) distribution of Physics scientists ranked by Research.com in 2026. The highlighted bar marks where Klaus Ensslin sits on this spectrum.
This scientist: 88 D-Index — 36th percentile
36% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 185 D-Index or more.
Klaus Ensslin is affiliated with ETH Zurich in Switzerland and focuses their research primarily within the fields of Physics and Astronomy, Materials Science, and Engineering. Their work spans several specialized subfields, including Atomic and Molecular Physics and Optics, Materials Chemistry, Electrical and Electronic Engineering, Biomedical Engineering, and Artificial Intelligence.
Their research covers a variety of topics, notably Quantum and Electron Transport Phenomena, Graphene Research and Applications, Topological Materials and Phenomena, Advancements in Semiconductor Devices and Circuit Design, Semiconductor Quantum Structures and Devices, 2D Materials and Applications, as well as Molecular Junctions and Nanostructures.
Frequent collaborators in Ensslin's research include Thomas Ihn, Takashi Taniguchi, Kenji Watanabe, Chuyao Tong, and Peter Rickhaus.
Ensslin has published extensively in venues such as arXiv (Cornell University), Physical Review Research, Physical Review Letters, Nano Letters, and the Repository for Publications and Research Data (ETH Zurich).
Recent published papers include:
Klaus Ensslin was awarded the distinction of Fellow of the American Physical Society (APS) in 2009, with the citation recognizing contributions to the understanding of optical and transport properties of nanoscale systems.
D. Graf;F. Molitor;K. Ensslin;C. Stampfer
S. Gustavsson;R. Leturcq;B. Simovič;R. Schleser
A. Fuhrer;S. Lüscher;T. Ihn;T. Heinzel
M. Henny;S. Oberholzer;C. Strunk;T. Heinzel
A. Fuhrer;S. Luescher;T. Ihn;T. Heinzel
C. Stampfer;J. Güttinger;S. Hellmüller;F. Molitor
C. Stampfer;E. Schurtenberger;F. Molitor;J. Güttinger
C. Stampfer;E. Schurtenberger;F. Molitor;J. Guettinger
G. Salis;Y. Kato;K. Ensslin;K. Ensslin;D. C. Driscoll
T. Frey;P. J. Leek;M. Beck;A. Blais
Renaud Leturcq;Renaud Leturcq;Christoph Stampfer;Kevin Inderbitzin;Lukas Durrer
G. Dehlinger;L. Diehl;U. Gennser;H. Sigg
Lorenz Meier;Lorenz Meier;Gian Salis;Ivan Shorubalko;Emilio Gini
C. Stampfer;F. Molitor;D. Graf;K. Ensslin
C. Stampfer;J. Güttinger;F. Molitor;D. Graf
C. Stampfer;J. Guettinger;F. Molitor;D. Graf
S Dröscher;P Roulleau;F Molitor;P Studerus
K. Ensslin;P. M. Petroff
R. Held;T. Vancura;Thomas Heinzel;Klaus Ensslin
C. Stampfer;L. Wirtz;A. Jungen;D. Graf
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