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Klaus Ensslin

Klaus Ensslin

D-Index & Metrics

Physics

D-Index
88
Citations
30725
World Ranking
2382
National Ranking
53

Research.com Recognitions

  • 2009 - Fellow of American Physical Society (APS) Citation For contributions to the understanding of optical and transport properties of nanoscale systems

Overview

Klaus Ensslin is affiliated with ETH Zurich in Switzerland and focuses their research primarily within the fields of Physics and Astronomy, Materials Science, and Engineering. Their work spans several specialized subfields, including Atomic and Molecular Physics and Optics, Materials Chemistry, Electrical and Electronic Engineering, Biomedical Engineering, and Artificial Intelligence.

Their research covers a variety of topics, notably Quantum and Electron Transport Phenomena, Graphene Research and Applications, Topological Materials and Phenomena, Advancements in Semiconductor Devices and Circuit Design, Semiconductor Quantum Structures and Devices, 2D Materials and Applications, as well as Molecular Junctions and Nanostructures.

Frequent collaborators in Ensslin's research include Thomas Ihn, Takashi Taniguchi, Kenji Watanabe, Chuyao Tong, and Peter Rickhaus.

Ensslin has published extensively in venues such as arXiv (Cornell University), Physical Review Research, Physical Review Letters, Nano Letters, and the Repository for Publications and Research Data (ETH Zurich).

Recent published papers include:

  • Gate-defined Josephson junctions in magic-angle twisted bilayer graphene, 2021, Nature Nanotechnology
  • Correlated electron-hole state in twisted double-bilayer graphene, 2021, Science
  • Tunable Valley Splitting due to Topological Orbital Magnetic Moment in Bilayer Graphene Quantum Point Contacts, 2020, Physical Review Letters
  • The electronic thickness of graphene, 2020, Science Advances
  • Tunable Valley Splitting and Bipolar Operation in Graphene Quantum Dots, 2021, Nano Letters

Klaus Ensslin was awarded the distinction of Fellow of the American Physical Society (APS) in 2009, with the citation recognizing contributions to the understanding of optical and transport properties of nanoscale systems.

Best Publications

  • Spatially Resolved Raman Spectroscopy of Single- and Few-Layer Graphene

    D. Graf;F. Molitor;K. Ensslin;C. Stampfer

  • Counting statistics of single electron transport in a quantum dot.

    S. Gustavsson;R. Leturcq;B. Simovič;R. Schleser

  • Energy spectra of quantum rings

    A. Fuhrer;S. Lüscher;T. Ihn;T. Heinzel

  • The Fermionic Hanbury Brown and Twiss Experiment

    M. Henny;S. Oberholzer;C. Strunk;T. Heinzel

  • Energy spectra of quantum rings

    A. Fuhrer;S. Luescher;T. Ihn;T. Heinzel

  • Energy Gaps in Etched Graphene Nanoribbons

    C. Stampfer;J. Güttinger;S. Hellmüller;F. Molitor

  • Tunable Graphene Single Electron Transistor

    C. Stampfer;E. Schurtenberger;F. Molitor;J. Güttinger

  • Tunable Graphene Single Electron Transistor

    C. Stampfer;E. Schurtenberger;F. Molitor;J. Guettinger

  • Electrical control of spin coherence in semiconductor nanostructures

    G. Salis;Y. Kato;K. Ensslin;K. Ensslin;D. C. Driscoll

  • Dipole coupling of a double quantum dot to a microwave resonator.

    T. Frey;P. J. Leek;M. Beck;A. Blais

  • Franck–Condon blockade in suspended carbon nanotube quantum dots

    Renaud Leturcq;Renaud Leturcq;Christoph Stampfer;Kevin Inderbitzin;Lukas Durrer

  • Intersubband electroluminescence from silicon-based quantum cascade structures.

    G. Dehlinger;L. Diehl;U. Gennser;H. Sigg

  • Measurement of Rashba and Dresselhaus spin-orbit magnetic fields

    Lorenz Meier;Lorenz Meier;Gian Salis;Ivan Shorubalko;Emilio Gini

  • Raman imaging of doping domains in graphene on SiO2

    C. Stampfer;F. Molitor;D. Graf;K. Ensslin

  • Tunable Coulomb blockade in nanostructured graphene

    C. Stampfer;J. Güttinger;F. Molitor;D. Graf

  • Tunable Coulomb blockade in nanostructured graphene

    C. Stampfer;J. Guettinger;F. Molitor;D. Graf

  • Quantum capacitance and density of states of graphene

    S Dröscher;P Roulleau;F Molitor;P Studerus

  • Magnetotransport through an antidot lattice in GaAs-AlxGa1-xAs heterostructures.

    K. Ensslin;P. M. Petroff

  • In-plane gates and nanostructures fabricated by direct oxidation of semiconductor heterostructures with an atomic force microscope

    R. Held;T. Vancura;Thomas Heinzel;Klaus Ensslin

  • Raman imaging of doping domains in graphene on SiO2

    C. Stampfer;L. Wirtz;A. Jungen;D. Graf

Frequent Co-Authors

Thomas Ihn
Thomas Ihn Solid State Physics Laboratory
Werner Wegscheider
Werner Wegscheider Solid State Physics Laboratory
Arthur C. Gossard
Arthur C. Gossard University of California, Santa Barbara
Christoph Stampfer
Christoph Stampfer RWTH Aachen University
Kenji Watanabe
Kenji Watanabe National Institute for Materials Science
Takashi Taniguchi
Takashi Taniguchi National Institute for Materials Science
Andreas D. Wieck
Andreas D. Wieck Ruhr University Bochum
Vladimir I. Fal'ko
Vladimir I. Fal'ko University of Manchester
Pierre Petroff
Pierre Petroff University of California, Santa Barbara

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