2026 Arthur C. Gossard: Physics Researcher – H-Index, Publications & Awards

D-Index & Metrics

Discipline name	D-Index	World Ranking	National Ranking	Publications	Citations
Materials Science	142	219	90	1427	85206
Physics	159	212	128	1674	105694

Discipline name

D-Index

World Ranking

National Ranking

Publications

Citations

Materials Science

142

219

1427

85206

Physics

159

212

128

1674

105694

Materials Science

D-Index

142

Citations

85206

World Ranking

219

National Ranking

Physics

D-Index

159

Citations

105694

World Ranking

212

National Ranking

128

Arthur C. Gossard publication distribution in Physics in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Physics in 2026. The highlighted bar marks where Arthur C. Gossard sits on this spectrum.

103 publications 1,469+

This scientist: 1,674 publications — 98th percentile

98% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,469 publications or more.

Arthur C. Gossard D-index placement in Physics in 2026

The chart shows the D-index (discipline H-index) distribution of Physics scientists ranked by Research.com in 2026. The highlighted bar marks where Arthur C. Gossard sits on this spectrum.

70 D-Index 185+

This scientist: 159 D-Index — 94th percentile

94% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 185 D-Index or more.

Research.com Recognitions

2010 - Fellow of the American Association for the Advancement of Science (AAAS)
2001 - Member of the National Academy of Sciences
1987 - Member of the National Academy of Engineering For contributions to the study of the physics of ultra-thin semiconducting layers through molecular beam epitaxy, leading to new physics and new devices.
1984 - Oliver E. Buckley Condensed Matter Prize, American Physical Society
1974 - Fellow of American Physical Society (APS)

Overview

Arthur C. Gossard was affiliated with the University of California, Santa Barbara in the United States. Their research spanned multiple interconnected fields, primarily within engineering and physics and astronomy. They contributed extensively to electrical and electronic engineering as well as atomic and molecular physics and optics. Condensed matter physics, biomedical engineering, and materials chemistry were also among the subfields covered.

The main topics in their body of work included photonic and optical devices, semiconductor quantum structures and devices, and GaN-based semiconductor devices and materials. Other focal areas included semiconductor lasers and optical devices, Ga₂O₃ and related materials, ZnO doping and properties, and neural networks and reservoir computing.

They published numerous recent papers, exemplifying a range of advanced semiconductor and photonic research:

1-kV Sputtered p-NiO/n-Ga₂O₃ Heterojunction Diodes With an Ultra-Low Leakage Current Below $1~\mu$ A/cm², 2020, IEEE Electron Device Letters
A monolithic InP/SOI platform for integrated photonics, 2021, Light Science & Applications
Active matrix monolithic micro-LED full-color micro-display, 2020, Journal of the Society for Information Display
Recent advances in light sources on silicon, 2022, Advances in Optics and Photonics
High gain and high ultraviolet/visible rejection ratio photodetectors using p-GaN/AlGaN/GaN heterostructures grown on Si, 2020, Applied Physics Letters

Frequent co-authors in their publications included:

Ying Xue
Yu Han
Liying Lin
Wei Luo
Chak Wah Tang

The most frequent publication venues for their work were:

Optics Express
Applied Physics Letters
IEEE Electron Device Letters
Optics Letters
Journal of Lightwave Technology

Throughout their career, Arthur C. Gossard received several prestigious awards and honors, including:

Fellow of the American Association for the Advancement of Science (AAAS), 2010
Member of the National Academy of Sciences, 2001
Member of the National Academy of Engineering, 1987, for contributions to the study of the physics of ultra-thin semiconducting layers through molecular beam epitaxy, leading to new physics and new devices
Oliver E. Buckley Condensed Matter Prize, American Physical Society, 1984
Fellow of American Physical Society (APS), 1974

Best Publications

Coherent manipulation of coupled electron spins in semiconductor quantum dots.

Jason R. Petta;Jason R. Petta;Jason R. Petta;Alexander C. Johnson;Alexander C. Johnson;Alexander C. Johnson;Jacob M. Taylor;Jacob M. Taylor;Jacob M. Taylor;Edward A. Laird;Edward A. Laird;Edward A. Laird

4025
Citations
Observation of the spin Hall effect in semiconductors.

Y. K. Kato;R. C. Myers;A. C. Gossard;D. D. Awschalom

3338
Citations
Active terahertz metamaterial devices

Houtong Chen;Willie John Padilla;Richard Douglas Averitt;John F. O'Hara

2884
Citations
Electric field dependence of optical absorption near the band gap of quantum-well structures.

D. A. B. Miller;D. S. Chemla;T. C. Damen;A. C. Gossard

2662
Citations
Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect

D. A. B. Miller;D. S. Chemla;T. C. Damen;A. C. Gossard

2351
Citations
Thermal conductivity reduction and thermoelectric figure of merit increase by embedding nanoparticles in crystalline semiconductors.

Woochul Kim;Joshua Zide;Arthur Gossard;Dmitri Klenov

1124
Citations
Conductance fluctuations and chaotic scattering in ballistic microstructures.

C. M. Marcus;C. M. Marcus;A. J. Rimberg;A. J. Rimberg;R. M. Westervelt;R. M. Westervelt;P. F. Hopkins;P. F. Hopkins

875
Citations
Room temperature excitonic nonlinear absorption and refraction in GaAs/AlGaAs multiple quantum well structures

D. Chemla;D. Miller;P. Smith;A. Gossard

815
Citations
Active Terahertz Metamaterial Devices

Hou-Tong Chen;John F. O’Hara;Abul K. Azad;D. Shrekenhamer

802
Citations
Novel hybrid optically bistable switch: The quantum well self‐electro‐optic effect device

D. A. B. Miller;D. S. Chemla;T. C. Damen;A. C. Gossard

739
Citations
Folded acoustic and quantized optic phonons in (GaAl)As superlattices.

C. Colvard;T. A. Gant;M. V. Klein;R. Merlin

728
Citations
Macroscopically ordered state in an exciton system

L. V. Butov;L. V. Butov;A. C. Gossard;D. S. Chemla;D. S. Chemla

693
Citations
Triplet-singlet spin relaxation via nuclei in a double quantum dot.

A. C. Johnson;Jason R. Petta;J. M. Taylor;A. Yacoby;A. Yacoby

692
Citations
Optically detected carrier confinement to one and zero dimension in GaAs quantum well wires and boxes

J. Cibert;P. M. Petroff;G. J. Dolan;S. J. Pearton

680
Citations
Single-electron charging in double and triple quantum dots with tunable coupling.

F. R. Waugh;M. J. Berry;D. J. Mar;R. M. Westervelt

665
Citations
Energy-gap discontinuities and effective masses for G a A s − Al x Ga 1 − x As quantum wells

R. C. Miller;D. A. Kleinman;A. C. Gossard

640
Citations
The quantum well self-electrooptic effect device: Optoelectronic bistability and oscillation, and self-linearized modulation

D. Miller;D. Chemla;T. Damen;T. Wood

629
Citations
Coherent spin manipulation without magnetic fields in strained semiconductors

Y. Kato;R. C. Myers;A. C. Gossard;D. D. Awschalom

606
Citations
Coherent branched flow in a two-dimensional electron gas

M. A. Topinka;B. J. LeRoy;R. M. Westervelt;S. E. J. Shaw

597
Citations
Gate-Controlled Spin-Orbit Quantum Interference Effects in Lateral Transport

J. B. Miller;D. M. Zumbühl;C. M. Marcus;Y. B. Lyanda-Geller

580
Citations