World's Best Scientists 2026 revealed!

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Materials Science

D-Index
142
Citations
85206
World Ranking
219
National Ranking
90

Physics

D-Index
159
Citations
105694
World Ranking
212
National Ranking
128

Research.com Recognitions

  • 2010 - Fellow of the American Association for the Advancement of Science (AAAS)
  • 2001 - Member of the National Academy of Sciences
  • 1987 - Member of the National Academy of Engineering For contributions to the study of the physics of ultra-thin semiconducting layers through molecular beam epitaxy, leading to new physics and new devices.
  • 1984 - Oliver E. Buckley Condensed Matter Prize, American Physical Society
  • 1974 - Fellow of American Physical Society (APS)

Overview

Arthur C. Gossard was affiliated with the University of California, Santa Barbara in the United States. Their research spanned multiple interconnected fields, primarily within engineering and physics and astronomy. They contributed extensively to electrical and electronic engineering as well as atomic and molecular physics and optics. Condensed matter physics, biomedical engineering, and materials chemistry were also among the subfields covered.

The main topics in their body of work included photonic and optical devices, semiconductor quantum structures and devices, and GaN-based semiconductor devices and materials. Other focal areas included semiconductor lasers and optical devices, Ga₂O₃ and related materials, ZnO doping and properties, and neural networks and reservoir computing.

They published numerous recent papers, exemplifying a range of advanced semiconductor and photonic research:

  • 1-kV Sputtered p-NiO/n-Ga2O3 Heterojunction Diodes With an Ultra-Low Leakage Current Below $1~\mu$ A/cm2, 2020, IEEE Electron Device Letters
  • A monolithic InP/SOI platform for integrated photonics, 2021, Light Science & Applications
  • Active matrix monolithic micro-LED full-color micro-display, 2020, Journal of the Society for Information Display
  • Recent advances in light sources on silicon, 2022, Advances in Optics and Photonics
  • High gain and high ultraviolet/visible rejection ratio photodetectors using p-GaN/AlGaN/GaN heterostructures grown on Si, 2020, Applied Physics Letters

Frequent co-authors in their publications included:

  • Ying Xue
  • Yu Han
  • Liying Lin
  • Wei Luo
  • Chak Wah Tang

The most frequent publication venues for their work were:

  • Optics Express
  • Applied Physics Letters
  • IEEE Electron Device Letters
  • Optics Letters
  • Journal of Lightwave Technology

Throughout their career, Arthur C. Gossard received several prestigious awards and honors, including:

  • Fellow of the American Association for the Advancement of Science (AAAS), 2010
  • Member of the National Academy of Sciences, 2001
  • Member of the National Academy of Engineering, 1987, for contributions to the study of the physics of ultra-thin semiconducting layers through molecular beam epitaxy, leading to new physics and new devices
  • Oliver E. Buckley Condensed Matter Prize, American Physical Society, 1984
  • Fellow of American Physical Society (APS), 1974

Best Publications

  • Coherent manipulation of coupled electron spins in semiconductor quantum dots.

    Jason R. Petta;Jason R. Petta;Jason R. Petta;Alexander C. Johnson;Alexander C. Johnson;Alexander C. Johnson;Jacob M. Taylor;Jacob M. Taylor;Jacob M. Taylor;Edward A. Laird;Edward A. Laird;Edward A. Laird

  • Observation of the spin Hall effect in semiconductors.

    Y. K. Kato;R. C. Myers;A. C. Gossard;D. D. Awschalom

  • Active terahertz metamaterial devices

    Houtong Chen;Willie John Padilla;Richard Douglas Averitt;John F. O'Hara

  • Electric field dependence of optical absorption near the band gap of quantum-well structures.

    D. A. B. Miller;D. S. Chemla;T. C. Damen;A. C. Gossard

  • Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect

    D. A. B. Miller;D. S. Chemla;T. C. Damen;A. C. Gossard

  • Thermal conductivity reduction and thermoelectric figure of merit increase by embedding nanoparticles in crystalline semiconductors.

    Woochul Kim;Joshua Zide;Arthur Gossard;Dmitri Klenov

  • Conductance fluctuations and chaotic scattering in ballistic microstructures.

    C. M. Marcus;C. M. Marcus;A. J. Rimberg;A. J. Rimberg;R. M. Westervelt;R. M. Westervelt;P. F. Hopkins;P. F. Hopkins

  • Room temperature excitonic nonlinear absorption and refraction in GaAs/AlGaAs multiple quantum well structures

    D. Chemla;D. Miller;P. Smith;A. Gossard

  • Active Terahertz Metamaterial Devices

    Hou-Tong Chen;John F. O’Hara;Abul K. Azad;D. Shrekenhamer

  • Novel hybrid optically bistable switch: The quantum well self‐electro‐optic effect device

    D. A. B. Miller;D. S. Chemla;T. C. Damen;A. C. Gossard

  • Folded acoustic and quantized optic phonons in (GaAl)As superlattices.

    C. Colvard;T. A. Gant;M. V. Klein;R. Merlin

  • Macroscopically ordered state in an exciton system

    L. V. Butov;L. V. Butov;A. C. Gossard;D. S. Chemla;D. S. Chemla

  • Triplet-singlet spin relaxation via nuclei in a double quantum dot.

    A. C. Johnson;Jason R. Petta;J. M. Taylor;A. Yacoby;A. Yacoby

  • Optically detected carrier confinement to one and zero dimension in GaAs quantum well wires and boxes

    J. Cibert;P. M. Petroff;G. J. Dolan;S. J. Pearton

  • Single-electron charging in double and triple quantum dots with tunable coupling.

    F. R. Waugh;M. J. Berry;D. J. Mar;R. M. Westervelt

  • Energy-gap discontinuities and effective masses for G a A s − Al x Ga 1 − x As quantum wells

    R. C. Miller;D. A. Kleinman;A. C. Gossard

  • The quantum well self-electrooptic effect device: Optoelectronic bistability and oscillation, and self-linearized modulation

    D. Miller;D. Chemla;T. Damen;T. Wood

  • Coherent spin manipulation without magnetic fields in strained semiconductors

    Y. Kato;R. C. Myers;A. C. Gossard;D. D. Awschalom

  • Coherent branched flow in a two-dimensional electron gas

    M. A. Topinka;B. J. LeRoy;R. M. Westervelt;S. E. J. Shaw

  • Gate-Controlled Spin-Orbit Quantum Interference Effects in Lateral Transport

    J. B. Miller;D. M. Zumbühl;C. M. Marcus;Y. B. Lyanda-Geller

Frequent Co-Authors

John E. Bowers
John E. Bowers University of California, Santa Barbara
James L. Merz
James L. Merz University of Notre Dame
Mark J. W. Rodwell
Mark J. W. Rodwell University of California, Santa Barbara
Klaus Ensslin
Klaus Ensslin ETH Zurich
Bo Monemar
Bo Monemar Linköping University
David D. Awschalom
David D. Awschalom Argonne National Laboratory
Daehwan Jung
Daehwan Jung Korea Institute of Science and Technology
Yating Wan
Yating Wan King Abdullah University of Science and Technology
Charles Marcus
Charles Marcus University of Copenhagen
Ali Shakouri
Ali Shakouri Purdue University West Lafayette

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