World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
34
Citations
4009
World Ranking
5891
National Ranking
204

Daehwan Jung publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Daehwan Jung sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 149 publications — 14th percentile

14% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Daehwan Jung D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Daehwan Jung sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 34 D-Index — 18th percentile

18% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Best Publications

  • Perspective: The future of quantum dot photonic integrated circuits

    Justin C. Norman;Daehwan Jung;Yating Wan;John E. Bowers

  • A Review of High-Performance Quantum Dot Lasers on Silicon

    Justin C. Norman;Daehwan Jung;Zeyu Zhang;Yating Wan

  • High-channel-count 20 GHz passively mode-locked quantum dot laser directly grown on Si with 41 Tbit/s transmission capacity

    Songtao Liu;Xinru Wu;Daehwan Jung;Justin C. Norman

  • 1.3 μm submilliamp threshold quantum dot micro-lasers on Si

    Yating Wan;Justin Norman;Qiang Li;M. J. Kennedy

  • Electrically pumped continuous-wave 1.3 μm quantum-dot lasers epitaxially grown on on-axis (001) GaP/Si.

    Alan Y. Liu;Jon Peters;Xue Huang;Daehwan Jung

  • Next-generation mid-infrared sources

    D Jung;S Bank;M L Lee;D Wasserman

  • Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si

    Daehwan Jung;Robert Herrick;Justin Norman;Katherine Turnlund

  • High efficiency low threshold current 1.3 μm InAs quantum dot lasers on on-axis (001) GaP/Si

    Daehwan Jung;Justin Norman;M. J. Kennedy;Chen Shang

  • Highly Reliable Low-Threshold InAs Quantum Dot Lasers on On-Axis (001) Si with 87% Injection Efficiency

    Daehwan Jung;Zeyu Zhang;Justin Norman;Robert Herrick

  • Low threading dislocation density GaAs growth on on-axis GaP/Si (001)

    Daehwan Jung;Patrick G. Callahan;Bongki Shin;Kunal Mukherjee

  • Bright Mid-Infrared Photoluminescence from Thin-Film Black Phosphorus.

    Chen Chen;Feng Chen;Xiaolong Chen;Bingchen Deng

  • Large-Area Dry Transfer of Single-Crystalline Epitaxial Bismuth Thin Films

    Emily S. Walker;Seung Ryul Na;Daehwan Jung;Stephen D. March

  • High Performance Ultrathin GaAs Solar Cells Enabled with Heterogeneously Integrated Dielectric Periodic Nanostructures

    Sung Min Lee;Anthony Kwong;Daehwan Jung;Joseph Faucher

  • 1.3- $\mu$ m Reflection Insensitive InAs/GaAs Quantum Dot Lasers Directly Grown on Silicon

    Jianan Duan;Heming Huang;Bozhang Dong;Daehwan Jung

  • Monolithically integrated InAs/InGaAs quantum dot photodetectors on silicon substrates

    Yating Wan;Zeyu Zhang;Ruilin Chao;Justin Norman

  • Semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth enhancement factor

    J. Duan;H. Huang;D. Jung;Z. Zhang

  • Analysis of the optical feedback dynamics in InAs/GaAs quantum dot lasers directly grown on silicon

    Heming Huang;Jianan Duan;Daehwan Jung;Alan Y. Liu

  • Directly modulated 1.3 μm quantum dot lasers epitaxially grown on silicon.

    Daisuke Inoue;Daehwan Jung;Justin Norman;Yating Wan

  • O-band Electrically Injected Quantum Dot Micro-ring Lasers on On-axis (001) GaP/Si and V-groove Si

    Yating Wan;Daehwan Jung;Justin Norman;Chen Shang

  • Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability

    Yating Wan;Daisuke Inoue;Daehwan Jung;Justin C. Norman

Frequent Co-Authors

John E. Bowers
John E. Bowers University of California, Santa Barbara
Arthur C. Gossard
Arthur C. Gossard University of California, Santa Barbara
Yating Wan
Yating Wan King Abdullah University of Science and Technology
Minjoo Larry Lee
Minjoo Larry Lee University of Illinois at Urbana-Champaign
Frédéric Grillot
Frédéric Grillot Télécom ParisTech
Seth R. Bank
Seth R. Bank The University of Texas at Austin
Daniel Wasserman
Daniel Wasserman The University of Texas at Austin
Kei May Lau
Kei May Lau Hong Kong University of Science and Technology
Gaudenzio Meneghesso
Gaudenzio Meneghesso University of Padua
Enrico Zanoni
Enrico Zanoni University of Padua

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