World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
65
Citations
15553
World Ranking
1222
National Ranking
211

Materials Science

D-Index
65
Citations
15592
World Ranking
5617
National Ranking
1711

Kei May Lau publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Kei May Lau sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 590 publications — 90th percentile

90% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Kei May Lau D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Kei May Lau sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 65 D-Index — 83rd percentile

83% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2019 - OSA Fellows Kei May Lau Hong Kong University of Science and Technology, Hong Kong For exceptional contributions to hetero-epitaxy of III-V on silicon by MOCVD for photonic devices
  • 2001 - IEEE Fellow For contributions to III-V compound semiconductor heterostructure materials and devices.

Overview

Kei May Lau is affiliated with the Hong Kong University of Science and Technology in China and conducts research primarily in the fields of Engineering and Physics and Astronomy. Within these fields, their work focuses extensively on Electrical and Electronic Engineering as well as Atomic and Molecular Physics, and Optics. Additional subfields in which they have contributed include Condensed Matter Physics, Biomedical Engineering, and Materials Chemistry.

The main topics of Kei May Lau's research include Photonic and Optical Devices, Semiconductor Quantum Structures and Devices, and GaN-based semiconductor devices and materials. Their work also covers Semiconductor Lasers and Optical Devices, Ga2O3 and related materials, ZnO doping and properties, and applications of Neural Networks and Reservoir Computing.

Recent publications illustrate the breadth of their research interests:

  • 1-kV Sputtered p-NiO/n-Ga2O3 Heterojunction Diodes With an Ultra-Low Leakage Current Below 1~μ A/cm2 (2020), IEEE Electron Device Letters
  • A monolithic InP/SOI platform for integrated photonics (2021), Light Science & Applications
  • Active matrix monolithic micro-LED full-color micro-display (2020), Journal of the Society for Information Display
  • Recent advances in light sources on silicon (2022), Advances in Optics and Photonics
  • High gain and high ultraviolet/visible rejection ratio photodetectors using p-GaN/AlGaN/GaN heterostructures grown on Si (2020), Applied Physics Letters

Kei May Lau frequently publishes in journals and venues such as:

  • Optics Express
  • Applied Physics Letters
  • IEEE Electron Device Letters
  • Optics Letters
  • Journal of Lightwave Technology

The scientist collaborates regularly with a group of frequent co-authors that include Ying Xue, Yu Han, Liying Lin, Wei Luo, and Chak Wah Tang.

Recognition for Kei May Lau's work includes the distinction of being named an IEEE Fellow in 2001, cited for contributions to III-V compound semiconductor heterostructure materials and devices. They were also named an OSA Fellow in 2019 for contributions to hetero-epitaxy of III-V on silicon by MOCVD for photonic devices.

Best Publications

  • High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

    Yong Cai;Yugang Zhou;K.J. Chen;K.M. Lau

  • Improved Constraints on Primordial Gravitational Waves using Planck, WMAP, and BICEP/Keck Observations through the 2018 Observing Season.

    P A R Ade;Z Ahmed;M Amiri;D Barkats

  • Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode

    Yong Cai;Yugang Zhou;K.M. Lau;K.J. Chen

  • Resonant-enhanced full-color emission of quantum-dot-based micro LED display technology.

    Hau Vei Han;Huang Yu Lin;Chien-Chung Lin;Wing Cheung Chong

  • Optical cross-talk reduction in a quantum-dot-based full-color micro-light-emitting-diode display by a lithographic-fabricated photoresist mold

    Huang-Yu Lin;Chin-Wei Sher;Dan-Hua Hsieh;Xin-Yin Chen

  • Enhancement-Mode $hboxSi_3hboxN_4hbox/AlGaN/GaN$ MISHFETs

    Ruonan Wang;Yong Cai;Chi-Wai Tang;K.M. Lau

  • 1-kV Sputtered p-NiO/n-Ga 2 O 3 Heterojunction Diodes With an Ultra-Low Leakage Current Below $1~\mu$ A/cm 2

    Xing Lu;Xianda Zhou;Huaxing Jiang;Kar Wei Ng

  • 1.3 μm submilliamp threshold quantum dot micro-lasers on Si

    Yating Wan;Justin Norman;Qiang Li;M. J. Kennedy

  • Monolithic full-color LED micro-display on an Active Matrix panel manufactured using flip-chip technology

    Kei May Lau;Zhaojun Liu

  • Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon

    Qiang Li;Kar Wei Ng;Kei May Lau

  • Enhancement-Mode III-N Devices, Circuits, and Methods

    Jing Chen;Yong Cai;Kei May Lau

  • AlGaN-GaN double-channel HEMTs

    Rongming Chu;Yugang Zhou;Jie Liu;Deliang Wang

  • High-Temperature Operation of AlGaN/GaN HEMTs Direct-Coupled FET Logic (DCFL) Integrated Circuits

    Yong Cai;Zhiqun Cheng;Zhenchuan Yang;Chak Wah Tang

  • InP Layer Transfer with Masked Implantation

    Wayne Chen;Prabhakar R. Bandaru;Chak Wah Tang;Kei May Lau

  • ELASTIC ANISOTROPY FACTORS FOR ORTHORHOMBIC, TETRAGONAL, AND HEXAGONAL CRYSTALS

    Unknown

  • Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

    Qiang Li;Kei May Lau

  • GaN-based LED micro-displays for wearable applications

    Zhaojun Liu;Wing Cheung Chong;Ka Ming Wong;Kei May Lau

  • Monolithically Integrated InGaN/GaN Light-emitting Diodes, Photodetectors and Waveguides on Si Substrate

    Kwai Hei Li;Wai Yuen Fu;Yuk Cheung;Kenneth Kin-Yip Wong

  • Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template

    Chinghua Chiu;Hishsuan Yen;Chuli Chao;Zhenyu Li

  • Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si.

    Justin C. Norman;Matthew J. Kennedy;Jennifer G. Selvidge;Qiang Li

  • Monolithically Integrated Enhancement/Depletion-Mode AlGaN/GaN HEMT Inverters and Ring Oscillators Using $hboxCF_4$ Plasma Treatment

    Yong Cai;Zhiqun Cheng;W.C.W. Tang;K.M. Lau

Frequent Co-Authors

Kevin J. Chen
Kevin J. Chen Hong Kong University of Science and Technology
Yating Wan
Yating Wan King Abdullah University of Science and Technology
Arthur C. Gossard
Arthur C. Gossard University of California, Santa Barbara
John E. Bowers
John E. Bowers University of California, Santa Barbara
Kent D. Irwin
Kent D. Irwin Stanford University
J. J. Bock
J. J. Bock California Institute of Technology
Hao-Chung Kuo
Hao-Chung Kuo National Yang Ming Chiao Tung University
A. C. Weber
A. C. Weber University of Oxford
Gene C. Hilton
Gene C. Hilton National Institute of Standards and Technology
Clement L Pryke
Clement L Pryke University of Minnesota

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