World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
65
Citations
15553
World Ranking
1222
National Ranking
210

Materials Science

D-Index
65
Citations
15592
World Ranking
5619
National Ranking
1710

Research.com Recognitions

  • 2019 - OSA Fellows Kei May Lau Hong Kong University of Science and Technology, Hong Kong For exceptional contributions to hetero-epitaxy of III-V on silicon by MOCVD for photonic devices
  • 2001 - IEEE Fellow For contributions to III-V compound semiconductor heterostructure materials and devices.

Overview

Kei May Lau is affiliated with the Hong Kong University of Science and Technology in China and conducts research primarily in the fields of Engineering and Physics and Astronomy. Within these fields, their work focuses extensively on Electrical and Electronic Engineering as well as Atomic and Molecular Physics, and Optics. Additional subfields in which they have contributed include Condensed Matter Physics, Biomedical Engineering, and Materials Chemistry.

The main topics of Kei May Lau's research include Photonic and Optical Devices, Semiconductor Quantum Structures and Devices, and GaN-based semiconductor devices and materials. Their work also covers Semiconductor Lasers and Optical Devices, Ga2O3 and related materials, ZnO doping and properties, and applications of Neural Networks and Reservoir Computing.

Recent publications illustrate the breadth of their research interests:

  • 1-kV Sputtered p-NiO/n-Ga2O3 Heterojunction Diodes With an Ultra-Low Leakage Current Below 1~μ A/cm2 (2020), IEEE Electron Device Letters
  • A monolithic InP/SOI platform for integrated photonics (2021), Light Science & Applications
  • Active matrix monolithic micro-LED full-color micro-display (2020), Journal of the Society for Information Display
  • Recent advances in light sources on silicon (2022), Advances in Optics and Photonics
  • High gain and high ultraviolet/visible rejection ratio photodetectors using p-GaN/AlGaN/GaN heterostructures grown on Si (2020), Applied Physics Letters

Kei May Lau frequently publishes in journals and venues such as:

  • Optics Express
  • Applied Physics Letters
  • IEEE Electron Device Letters
  • Optics Letters
  • Journal of Lightwave Technology

The scientist collaborates regularly with a group of frequent co-authors that include Ying Xue, Yu Han, Liying Lin, Wei Luo, and Chak Wah Tang.

Recognition for Kei May Lau's work includes the distinction of being named an IEEE Fellow in 2001, cited for contributions to III-V compound semiconductor heterostructure materials and devices. They were also named an OSA Fellow in 2019 for contributions to hetero-epitaxy of III-V on silicon by MOCVD for photonic devices.

Best Publications

  • High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

    Yong Cai;Yugang Zhou;K.J. Chen;K.M. Lau

  • Improved Constraints on Primordial Gravitational Waves using Planck, WMAP, and BICEP/Keck Observations through the 2018 Observing Season.

    P A R Ade;Z Ahmed;M Amiri;D Barkats

  • Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode

    Yong Cai;Yugang Zhou;K.M. Lau;K.J. Chen

  • Resonant-enhanced full-color emission of quantum-dot-based micro LED display technology.

    Hau Vei Han;Huang Yu Lin;Chien-Chung Lin;Wing Cheung Chong

  • Optical cross-talk reduction in a quantum-dot-based full-color micro-light-emitting-diode display by a lithographic-fabricated photoresist mold

    Huang-Yu Lin;Chin-Wei Sher;Dan-Hua Hsieh;Xin-Yin Chen

  • Enhancement-Mode $hboxSi_3hboxN_4hbox/AlGaN/GaN$ MISHFETs

    Ruonan Wang;Yong Cai;Chi-Wai Tang;K.M. Lau

  • 1-kV Sputtered p-NiO/n-Ga 2 O 3 Heterojunction Diodes With an Ultra-Low Leakage Current Below $1~\mu$ A/cm 2

    Xing Lu;Xianda Zhou;Huaxing Jiang;Kar Wei Ng

  • 1.3 μm submilliamp threshold quantum dot micro-lasers on Si

    Yating Wan;Justin Norman;Qiang Li;M. J. Kennedy

  • Monolithic full-color LED micro-display on an Active Matrix panel manufactured using flip-chip technology

    Kei May Lau;Zhaojun Liu

  • Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon

    Qiang Li;Kar Wei Ng;Kei May Lau

  • Enhancement-Mode III-N Devices, Circuits, and Methods

    Jing Chen;Yong Cai;Kei May Lau

  • AlGaN-GaN double-channel HEMTs

    Rongming Chu;Yugang Zhou;Jie Liu;Deliang Wang

  • High-Temperature Operation of AlGaN/GaN HEMTs Direct-Coupled FET Logic (DCFL) Integrated Circuits

    Yong Cai;Zhiqun Cheng;Zhenchuan Yang;Chak Wah Tang

  • InP Layer Transfer with Masked Implantation

    Wayne Chen;Prabhakar R. Bandaru;Chak Wah Tang;Kei May Lau

  • ELASTIC ANISOTROPY FACTORS FOR ORTHORHOMBIC, TETRAGONAL, AND HEXAGONAL CRYSTALS

    Unknown

  • Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

    Qiang Li;Kei May Lau

  • GaN-based LED micro-displays for wearable applications

    Zhaojun Liu;Wing Cheung Chong;Ka Ming Wong;Kei May Lau

  • Monolithically Integrated InGaN/GaN Light-emitting Diodes, Photodetectors and Waveguides on Si Substrate

    Kwai Hei Li;Wai Yuen Fu;Yuk Cheung;Kenneth Kin-Yip Wong

  • Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template

    Chinghua Chiu;Hishsuan Yen;Chuli Chao;Zhenyu Li

  • Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si.

    Justin C. Norman;Matthew J. Kennedy;Jennifer G. Selvidge;Qiang Li

  • Monolithically Integrated Enhancement/Depletion-Mode AlGaN/GaN HEMT Inverters and Ring Oscillators Using $hboxCF_4$ Plasma Treatment

    Yong Cai;Zhiqun Cheng;W.C.W. Tang;K.M. Lau

Frequent Co-Authors

Kevin J. Chen
Kevin J. Chen Hong Kong University of Science and Technology
Yating Wan
Yating Wan King Abdullah University of Science and Technology
Arthur C. Gossard
Arthur C. Gossard University of California, Santa Barbara
John E. Bowers
John E. Bowers University of California, Santa Barbara
Kent D. Irwin
Kent D. Irwin Stanford University
J. J. Bock
J. J. Bock California Institute of Technology
Hao-Chung Kuo
Hao-Chung Kuo National Yang Ming Chiao Tung University
A. C. Weber
A. C. Weber University of Oxford
Gene C. Hilton
Gene C. Hilton National Institute of Standards and Technology
Clement L Pryke
Clement L Pryke University of Minnesota

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