World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
52
Citations
17228
World Ranking
2472
National Ranking
954

Research.com Recognitions

  • 2021 - IEEE Fellow For contributions to Gallium Nitride microwave and power conversion devices

Overview

Yifeng Wu is affiliated with Transphorm Inc. in the United States and has a research background spanning multiple fields, primarily in engineering and materials science. Their work covers subfields such as materials chemistry, electrical and electronic engineering, aerospace engineering, computational mechanics, and atomic and molecular physics, and optics.

The scientist's recent papers demonstrate a focus on the analysis and properties of semiconductor and oxide materials, as well as the use of machine learning methods applied to materials science. Notable recent publications include:

  • "Deep Learning for Rapid Analysis of Spectroscopic Ellipsometry Data," 2021, Advanced Photonics Research
  • "Influence of space charge on the conductivity of nanocrystalline SrTiO3," 2020, Journal of Applied Physics
  • "Prediction of chemical ordering in refractory high-entropy superalloys," 2021, Applied Physics Letters
  • "On native point defects in ZnSe," 2022, Applied Physics Letters
  • "Experimental and numerical investigation on energy efficiency improvement of methane/propane added of hydrogen-fueled micro power generation," 2024, Energy

Yifeng Wu has published frequently in venues such as arXiv (Cornell University), Applied Physics Letters, Journal of Applied Physics, Energy, and Advanced Photonics Research.

  • arXiv (Cornell University)
  • Applied Physics Letters
  • Journal of Applied Physics
  • Energy
  • Advanced Photonics Research

Their work covers key topics including:

  • Chalcogenide Semiconductor Thin Films
  • Machine Learning in Materials Science
  • Quantum Dots Synthesis And Properties
  • Phase-change materials and chalcogenides
  • Electronic and Structural Properties of Oxides
  • Semiconductor Quantum Structures and Devices
  • Membrane Separation Technologies

Frequent collaborators include Douglas L. Irving, Preston C. Bowes, Jonathon N. Baker, Kelsey J. Mirrielees, and Yifei Li.

  • Douglas L. Irving
  • Preston C. Bowes
  • Jonathon N. Baker
  • Kelsey J. Mirrielees
  • Yifei Li

Yifeng Wu was named IEEE Fellow in 2021 for contributions to Gallium Nitride microwave and power conversion devices.

Best Publications

  • AlGaN/GaN HEMTs-an overview of device operation and applications

    U.K. Mishra;P. Parikh;Yi-Feng Wu

  • GaN-Based RF Power Devices and Amplifiers

    U.K. Mishra;Shen Likun;T.E. Kazior;Yi-Feng Wu

  • GaN-on-Si Power Technology: Devices and Applications

    Kevin J. Chen;Oliver Haberlen;Alex Lidow;Chun lin Tsai

  • 30-W/mm GaN HEMTs by field plate optimization

    Y.-F. Wu;A. Saxler;M. Moore;R.P. Smith

  • Very-high power density AlGaN/GaN HEMTs

    Yi-Feng Wu;D. Kapolnek;J.P. Ibbetson;P. Parikh

  • 40-W/mm Double Field-plated GaN HEMTs

    Y.-F. Wu;M. Moore;A. Saxler;T. Wisleder

  • VERY HIGH BREAKDOWN VOLTAGE AND LARGE TRANSCONDUCTANCE REALIZED ON GAN HETEROJUNCTION FIELD EFFECT TRANSISTORS

    Y.‐F. Wu;B. P. Keller;S. Keller;D. Kapolnek

  • NORMALLY-OFF TYPE SEMICONDUCTOR DEVICE AND MANUFACTURE METHOD OF THE SAME

    Sten Heikman;Wu Yifeng

  • High electron mobility transistor (hemt)

    P Smorchkova Ioulia;Chavarkar Prashant;Keller Stacia;Mishra Umesh

  • A 97.8% Efficient GaN HEMT Boost Converter With 300-W Output Power at 1 MHz

    Yifeng Wu;M. Jacob-Mitos;M.L. Moore;S. Heikman

  • High Al-content AlGaN/GaN MODFETs for ultrahigh performance

    Y.-F. Wu;B.P. Keller;P. Fini;S. Keller

  • Insulting gate Al Ga nitride/GaN HEMT

    Umesh Mishra;Primit Parikh;Yifeng Wu

  • Group iii nitride based fets and hemts with reduced trapping and method for producing the same

    Yifeng Wu;Naiqian Zhang;Jian Xu;Lee Mccarthy

  • Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition

    S. Keller;B. P. Keller;Y.‐F. Wu;B. Heying

  • GaN microwave electronics

    U.K. Mishra;Yi-Feng Wu;B.P. Keller;S. Keller

  • Wide bandgap transistors Wide bandgap transistors with multiple field plates

    Wu Yi-Feng;Parikh Primit;Mishra Umesh;Moore Marcia

  • Transistors with fluorine treatment

    Yifeng Wu;Marcia Moore;Primit Parikh;Tim Wisleder

  • Semiconductor heterostructure diodes and assembles including the same

    Wu Yifeng;Mishra Umesh;Parikh Primit;Chu Rongming

  • Group III nitride bases flip-chip integrated circuit and method for fabricating

    Mishra Umesh;Parikh Primit;Wu Yifeng

  • Wide bandgap transistor devices with field plates

    Primit Parikh;Yifeng Wu

Frequent Co-Authors

Umesh K. Mishra
Umesh K. Mishra University of California, Santa Barbara
Adam William Saxler
Adam William Saxler Wolfspeed, Inc.
Steven P. DenBaars
Steven P. DenBaars University of California, Santa Barbara
Stacia Keller
Stacia Keller University of California, Santa Barbara
Alessandro Chini
Alessandro Chini University of Modena and Reggio Emilia
James S. Speck
James S. Speck University of California, Santa Barbara
Paul T. Fini
Paul T. Fini Raytheon (United States)
Robert A. York
Robert A. York University of California, Santa Barbara

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