D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 48 Citations 14,651 89 World Ranking 1870 National Ranking 807

Research.com Recognitions

Awards & Achievements

2021 - IEEE Fellow For contributions to Gallium Nitride microwave and power conversion devices

Overview

What is he best known for?

The fields of study he is best known for:

  • Electrical engineering
  • Semiconductor
  • Voltage

His main research concerns Optoelectronics, Gallium nitride, High-electron-mobility transistor, Wide-bandgap semiconductor and Power electronics. His Optoelectronics study integrates concerns from other disciplines, such as Field-effect transistor, Power density and Voltage. His studies in Field-effect transistor integrate themes in fields like Heterojunction and Nitride.

High-electron-mobility transistor is a subfield of Transistor that he tackles. His Wide-bandgap semiconductor study which covers Integrated circuit that intersects with Flip chip and High power density. His research in Power electronics intersects with topics in Boost converter, Monolithic microwave integrated circuit and Power semiconductor device.

His most cited work include:

  • AlGaN/GaN HEMTs-an overview of device operation and applications (1347 citations)
  • GaN-Based RF Power Devices and Amplifiers (1066 citations)
  • 30-W/mm GaN HEMTs by field plate optimization (911 citations)

What are the main themes of his work throughout his whole career to date?

His primary scientific interests are in Optoelectronics, Transistor, Electrical engineering, High-electron-mobility transistor and Field-effect transistor. His Optoelectronics research includes elements of Barrier layer, Gallium nitride, Semiconductor device and Nitride. His study looks at the intersection of Gallium nitride and topics like Wide-bandgap semiconductor with Integrated circuit.

The study incorporates disciplines such as Electron mobility and Band gap in addition to Transistor. His work on Electronic circuit, Cascode and High voltage as part of his general Electrical engineering study is frequently connected to Computer science, thereby bridging the divide between different branches of science. His High-electron-mobility transistor study also includes

  • Leakage together with Chemical vapor deposition,
  • Substrate and related Analytical chemistry.

He most often published in these fields:

  • Optoelectronics (68.38%)
  • Transistor (42.74%)
  • Electrical engineering (34.19%)

What were the highlights of his more recent work (between 2014-2020)?

  • Electrical engineering (34.19%)
  • High voltage (10.26%)
  • Optoelectronics (68.38%)

In recent papers he was focusing on the following fields of study:

His scientific interests lie mostly in Electrical engineering, High voltage, Optoelectronics, High-electron-mobility transistor and Cascode. His study on Electronic circuit and Transistor is often connected to Computer science as part of broader study in Electrical engineering. His High voltage research focuses on Gallium nitride and how it relates to Engineering physics and Reliability.

Yifeng Wu specializes in Optoelectronics, namely Semiconductor. His work deals with themes such as Wafer, Electronic engineering, Silicon and Leakage, which intersect with High-electron-mobility transistor. His study on Cascode also encompasses disciplines like

  • Converters that intertwine with fields like Resonance, Capacitance and Power semiconductor device,
  • Battery which is related to area like Power rating and Voltage regulation,
  • Electricity and related Photovoltaic system, Breakdown voltage and Efficient energy use.

Between 2014 and 2020, his most popular works were:

  • GaN-on-Si Power Technology: Devices and Applications (420 citations)
  • High-efficiency True Bridgeless Totem Pole PFC based on GaN HEMT: Design Challenges and Cost-effective Solution (24 citations)
  • Commercialization and reliability of 600 V GaN power switches (24 citations)

In his most recent research, the most cited papers focused on:

  • Electrical engineering
  • Semiconductor
  • Voltage

The scientist’s investigation covers issues in Electrical engineering, High-electron-mobility transistor, Electronic engineering, Cascode and High voltage. His Electrical engineering research is multidisciplinary, incorporating perspectives in Gallium nitride and Reliability. His Gallium nitride study combines topics in areas such as Power electronics and Logic gate.

He performs integrative study on High-electron-mobility transistor and Interference in his works. His work carried out in the field of Electronic engineering brings together such families of science as Diode, Light load and Switching frequency. Yifeng Wu combines subjects such as Ferrite bead, Electronic component, Parasitic element, Terminal and Transistor with his study of Electronic circuit.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

AlGaN/GaN HEMTs-an overview of device operation and applications

U.K. Mishra;P. Parikh;Yi-Feng Wu.
Proceedings of the IEEE (2002)

2112 Citations

AlGaN/GaN HEMTs-an overview of device operation and applications

U.K. Mishra;P. Parikh;Yi-Feng Wu.
Proceedings of the IEEE (2002)

2112 Citations

GaN-Based RF Power Devices and Amplifiers

U.K. Mishra;Shen Likun;T.E. Kazior;Yi-Feng Wu.
Proceedings of the IEEE (2008)

1686 Citations

GaN-Based RF Power Devices and Amplifiers

U.K. Mishra;Shen Likun;T.E. Kazior;Yi-Feng Wu.
Proceedings of the IEEE (2008)

1686 Citations

30-W/mm GaN HEMTs by field plate optimization

Y.-F. Wu;A. Saxler;M. Moore;R.P. Smith.
IEEE Electron Device Letters (2004)

1300 Citations

30-W/mm GaN HEMTs by field plate optimization

Y.-F. Wu;A. Saxler;M. Moore;R.P. Smith.
IEEE Electron Device Letters (2004)

1300 Citations

Very-high power density AlGaN/GaN HEMTs

Yi-Feng Wu;D. Kapolnek;J.P. Ibbetson;P. Parikh.
IEEE Transactions on Electron Devices (2001)

759 Citations

Very-high power density AlGaN/GaN HEMTs

Yi-Feng Wu;D. Kapolnek;J.P. Ibbetson;P. Parikh.
IEEE Transactions on Electron Devices (2001)

759 Citations

GaN-on-Si Power Technology: Devices and Applications

Kevin J. Chen;Oliver Haberlen;Alex Lidow;Chun lin Tsai.
IEEE Transactions on Electron Devices (2017)

756 Citations

GaN-on-Si Power Technology: Devices and Applications

Kevin J. Chen;Oliver Haberlen;Alex Lidow;Chun lin Tsai.
IEEE Transactions on Electron Devices (2017)

756 Citations

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