World's Best Scientists 2026 revealed!
Gaudenzio Meneghesso

Gaudenzio Meneghesso

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
70
Citations
22573
World Ranking
903
National Ranking
17

Materials Science

D-Index
70
Citations
22244
World Ranking
4366
National Ranking
51

Gaudenzio Meneghesso publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Gaudenzio Meneghesso sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 990 publications — 98th percentile

98% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Gaudenzio Meneghesso D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Gaudenzio Meneghesso sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 70 D-Index — 87th percentile

87% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2013 - IEEE Fellow For contributions to the reliability physics of compound semiconductors devices

Overview

Gaudenzio Meneghesso is affiliated with the University of Padua in Italy, where research focuses primarily on compound semiconductor devices. Their work spans the fields of engineering, physics and astronomy, and materials science with subfields including electrical and electronic engineering, condensed matter physics, atomic and molecular physics and optics, materials chemistry, and electronic, optical, and magnetic materials.

The main research topics include:

  • GaN-based semiconductor devices and materials
  • Semiconductor materials and devices
  • Ga2O3 and related materials
  • Semiconductor quantum structures and devices
  • Silicon carbide semiconductor technologies
  • Advancements in semiconductor devices and circuit design
  • ZnO doping and properties

Recent publications authored or co-authored by Gaudenzio Meneghesso cover various aspects of semiconductor physics and device reliability, including:

  • "GaN-based power devices: Physics, reliability, and perspectives," 2021, Journal of Applied Physics
  • "Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives," 2024, IEEE Transactions on Electron Devices
  • "Defects and Reliability of GaN-Based LEDs: Review and Perspectives," 2022, physica status solidi (a)
  • "Thermal droop in III-nitride based light-emitting diodes: Physical origin and perspectives," 2020, Journal of Applied Physics
  • "'Hole Redistribution' Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs," 2021, IEEE Transactions on Electron Devices

Frequent collaborators in their work include:

  • Matteo Meneghini
  • Enrico Zanoni
  • Carlo De Santi
  • Matteo Buffolo
  • Alessandro Caria

The most common venues for publication by Gaudenzio Meneghesso are:

  • Microelectronics Reliability
  • IEEE Transactions on Electron Devices
  • Journal of Physics D Applied Physics
  • Journal of Applied Physics
  • Applied Physics Letters

In recognition of contributions to the reliability physics of compound semiconductor devices, Gaudenzio Meneghesso was named an IEEE Fellow in 2013.

Best Publications

  • The 2018 GaN power electronics roadmap

    H Amano;Y Baines;Matteo Borga

  • Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

    G. Meneghesso;G. Verzellesi;F. Danesin;F. Rampazzo

  • GaN-based power devices: Physics, reliability, and perspectives

    Matteo Meneghini;Carlo De Santi;Idriss Abid;Matteo Buffolo

  • Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies

    Giovanni Verzellesi;Davide Saguatti;Matteo Meneghini;Francesco Bertazzi

  • Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements

    Davide Bisi;Matteo Meneghini;Carlo de Santi;Alessandro Chini

  • Surface-related drain current dispersion effects in AlGaN-GaN HEMTs

    G. Meneghesso;G. Verzellesi;R. Pierobon;F. Rampazzo

  • A Review on the Physical Mechanisms That Limit the Reliability of GaN-Based LEDs

    M. Meneghini;A. Tazzoli;G. Mura;G. Meneghesso

  • A Review on the Reliability of GaN-Based LEDs

    M. Meneghini;L.-R. Trevisanello;G. Meneghesso;E. Zanoni

  • Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

    Unknown

  • Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs

    G. Meneghesso;F. Rampazzo;P. Kordos;G. Verzellesi

  • Accelerated Life Test of High Brightness Light Emitting Diodes

    L. Trevisanello;M. Meneghini;G. Mura;M. Vanzi

  • Power GaN Devices

    Matteo Meneghini;Gaudenzio Meneghesso;Enrico Zanoni

  • Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements

    Matteo Meneghini;Isabella Rossetto;Davide Bisi;Antonio Stocco

  • Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method

    M. Meneghini;N. Ronchi;A. Stocco;G. Meneghesso

  • Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs

    M. Faqir;G. Verzellesi;G. Meneghesso;E. Zanoni

  • Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate

    Isabella Rossetto;Matteo Meneghini;Oliver Hilt;Eldad Bahat-Treidel

  • AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction

    Enrico Zanoni;Matteo Meneghini;Alessandro Chini;Denis Marcon

  • A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes

    Matteo Meneghini;Nicola Trivellin;Gaudenzio Meneghesso;Enrico Zanoni

  • Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate

    Matteo Meneghini;Oliver Hilt;Joachim Wuerfl;Gaudenzio Meneghesso

  • Evidence of Spiro-OMeTAD De-doping by tert-Butylpyridine Additive in Hole-Transporting Layers for Perovskite Solar Cells

    Francesco Lamberti;Francesco Lamberti;Teresa Gatti;Teresa Gatti;Enrico Cescon;Roberto Sorrentino

  • Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias

    Matteo Meneghini;Antonio Stocco;Marco Bertin;Denis Marcon

  • Reliability and parasitic issues in GaN-based power HEMTs: a review

    Gaudenzio Meneghesso;Matteo Meneghini;Isabella Rossetto;Davide Bisi

  • Reliability issues of Gallium Nitride High Electron Mobility Transistors

    Gaudenzio Meneghesso;Matteo Meneghini;Augusto Tazzoli;Nicolo' Ronchi

Frequent Co-Authors

Enrico Zanoni
Enrico Zanoni University of Padua
Matteo Meneghini
Matteo Meneghini University of Padua
Alessandro Chini
Alessandro Chini University of Modena and Reggio Emilia
Claudio Canali
Claudio Canali University of Modena and Reggio Emilia
Alessandro Paccagnella
Alessandro Paccagnella University of Padua
Tsuyoshi Tanaka
Tsuyoshi Tanaka Panasonic (Japan)
Steve Stoffels
Steve Stoffels Aluvia Photonics
Umesh K. Mishra
Umesh K. Mishra University of California, Santa Barbara

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