World's Best Scientists 2026 revealed!
Gaudenzio Meneghesso

Gaudenzio Meneghesso

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
70
Citations
22573
World Ranking
903
National Ranking
17

Materials Science

D-Index
70
Citations
22244
World Ranking
4368
National Ranking
51

Research.com Recognitions

  • 2013 - IEEE Fellow For contributions to the reliability physics of compound semiconductors devices

Overview

Gaudenzio Meneghesso is affiliated with the University of Padua in Italy, where research focuses primarily on compound semiconductor devices. Their work spans the fields of engineering, physics and astronomy, and materials science with subfields including electrical and electronic engineering, condensed matter physics, atomic and molecular physics and optics, materials chemistry, and electronic, optical, and magnetic materials.

The main research topics include:

  • GaN-based semiconductor devices and materials
  • Semiconductor materials and devices
  • Ga2O3 and related materials
  • Semiconductor quantum structures and devices
  • Silicon carbide semiconductor technologies
  • Advancements in semiconductor devices and circuit design
  • ZnO doping and properties

Recent publications authored or co-authored by Gaudenzio Meneghesso cover various aspects of semiconductor physics and device reliability, including:

  • "GaN-based power devices: Physics, reliability, and perspectives," 2021, Journal of Applied Physics
  • "Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives," 2024, IEEE Transactions on Electron Devices
  • "Defects and Reliability of GaN-Based LEDs: Review and Perspectives," 2022, physica status solidi (a)
  • "Thermal droop in III-nitride based light-emitting diodes: Physical origin and perspectives," 2020, Journal of Applied Physics
  • "'Hole Redistribution' Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs," 2021, IEEE Transactions on Electron Devices

Frequent collaborators in their work include:

  • Matteo Meneghini
  • Enrico Zanoni
  • Carlo De Santi
  • Matteo Buffolo
  • Alessandro Caria

The most common venues for publication by Gaudenzio Meneghesso are:

  • Microelectronics Reliability
  • IEEE Transactions on Electron Devices
  • Journal of Physics D Applied Physics
  • Journal of Applied Physics
  • Applied Physics Letters

In recognition of contributions to the reliability physics of compound semiconductor devices, Gaudenzio Meneghesso was named an IEEE Fellow in 2013.

Best Publications

  • The 2018 GaN power electronics roadmap

    H Amano;Y Baines;Matteo Borga

  • Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

    G. Meneghesso;G. Verzellesi;F. Danesin;F. Rampazzo

  • GaN-based power devices: Physics, reliability, and perspectives

    Matteo Meneghini;Carlo De Santi;Idriss Abid;Matteo Buffolo

  • Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies

    Giovanni Verzellesi;Davide Saguatti;Matteo Meneghini;Francesco Bertazzi

  • Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements

    Davide Bisi;Matteo Meneghini;Carlo de Santi;Alessandro Chini

  • Surface-related drain current dispersion effects in AlGaN-GaN HEMTs

    G. Meneghesso;G. Verzellesi;R. Pierobon;F. Rampazzo

  • A Review on the Physical Mechanisms That Limit the Reliability of GaN-Based LEDs

    M. Meneghini;A. Tazzoli;G. Mura;G. Meneghesso

  • A Review on the Reliability of GaN-Based LEDs

    M. Meneghini;L.-R. Trevisanello;G. Meneghesso;E. Zanoni

  • Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

    Unknown

  • Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs

    G. Meneghesso;F. Rampazzo;P. Kordos;G. Verzellesi

  • Accelerated Life Test of High Brightness Light Emitting Diodes

    L. Trevisanello;M. Meneghini;G. Mura;M. Vanzi

  • Power GaN Devices

    Matteo Meneghini;Gaudenzio Meneghesso;Enrico Zanoni

  • Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements

    Matteo Meneghini;Isabella Rossetto;Davide Bisi;Antonio Stocco

  • Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method

    M. Meneghini;N. Ronchi;A. Stocco;G. Meneghesso

  • Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs

    M. Faqir;G. Verzellesi;G. Meneghesso;E. Zanoni

  • Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate

    Isabella Rossetto;Matteo Meneghini;Oliver Hilt;Eldad Bahat-Treidel

  • AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction

    Enrico Zanoni;Matteo Meneghini;Alessandro Chini;Denis Marcon

  • A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes

    Matteo Meneghini;Nicola Trivellin;Gaudenzio Meneghesso;Enrico Zanoni

  • Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate

    Matteo Meneghini;Oliver Hilt;Joachim Wuerfl;Gaudenzio Meneghesso

  • Evidence of Spiro-OMeTAD De-doping by tert-Butylpyridine Additive in Hole-Transporting Layers for Perovskite Solar Cells

    Francesco Lamberti;Francesco Lamberti;Teresa Gatti;Teresa Gatti;Enrico Cescon;Roberto Sorrentino

  • Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias

    Matteo Meneghini;Antonio Stocco;Marco Bertin;Denis Marcon

  • Reliability and parasitic issues in GaN-based power HEMTs: a review

    Gaudenzio Meneghesso;Matteo Meneghini;Isabella Rossetto;Davide Bisi

  • Reliability issues of Gallium Nitride High Electron Mobility Transistors

    Gaudenzio Meneghesso;Matteo Meneghini;Augusto Tazzoli;Nicolo' Ronchi

Frequent Co-Authors

Enrico Zanoni
Enrico Zanoni University of Padua
Matteo Meneghini
Matteo Meneghini University of Padua
Alessandro Chini
Alessandro Chini University of Modena and Reggio Emilia
Claudio Canali
Claudio Canali University of Modena and Reggio Emilia
Alessandro Paccagnella
Alessandro Paccagnella University of Padua
Tsuyoshi Tanaka
Tsuyoshi Tanaka Panasonic (Japan)
Steve Stoffels
Steve Stoffels Aluvia Photonics
Umesh K. Mishra
Umesh K. Mishra University of California, Santa Barbara

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Related Online Degrees & Career Pathways

For students pursuing Electronics and Electrical Engineering in the USA, exploring related online degrees can open diverse career opportunities. Many professionals find value in supplementing their technical expertise with management skills, which makes an accelerated project management degree a practical choice. These programs offer a fast-track route to leadership roles in engineering projects and technology management.

For those interested in formalizing their skills, a project manager bachelor degree online provides flexible education options. Online degrees allow working adults to balance education with career or personal commitments, helping them advance without pause.

Accelerated formats are especially popular among working adults aiming to upskill efficiently. You can explore options at accelerated online degrees to find programs tailored for quick completion and career advancement.

Additionally, those interested in training and development within the tech field may consider earning a master's in instructional design. This degree supports careers in designing educational technologies and corporate training programs, bridging technical knowledge with educational expertise.

Best Scientists Citing Gaudenzio Meneghesso

Trending Scientists