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Gaudenzio Meneghesso

Gaudenzio Meneghesso

University of Padua
Italy

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 70 903 861 17 17 990 22573
Materials Science 70 4366 4223 51 48 949 22244

Gaudenzio Meneghesso publications per year

The chart shows the history of publications by Gaudenzio Meneghesso between 1994 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Gaudenzio Meneghesso published across 32 years, from 1994 to 2025, averaging 32.4 papers a year. Output peaked at 58 publications in 2021. 68 of the 1,038 publications appeared in the last two years.

No. of publications
10 20 30 40 50
Bar chart. Horizontal axis: year, 1994 to 2025. Vertical axis: number of publications, 0 to 58. Peak 58 publications in 2021. 1994: 3 publications 1995: 5 publications 1996: 12 publications 1997: 12 publications 1998: 10 publications 1999: 17 publications 2000: 12 publications 2001: 17 publications 2002: 13 publications 2003: 17 publications 2004: 17 publications 2005: 22 publications 2006: 24 publications 2007: 25 publications 2008: 43 publications 2009: 44 publications 2010: 48 publications 2011: 32 publications 2012: 44 publications 2013: 50 publications 2014: 56 publications 2015: 48 publications 2016: 56 publications 2017: 43 publications 2018: 44 publications 2019: 47 publications 2020: 55 publications 2021: 58 publications 2022: 47 publications 2023: 49 publications 2024: 38 publications 2025: 30 publications
1994 2025

1,038 publications in total across all disciplines

View publications per year as a table
Gaudenzio Meneghesso: publications per year, 1994 to 2025
Year Publications
1994 3
1995 5
1996 12
1997 12
1998 10
1999 17
2000 12
2001 17
2002 13
2003 17
2004 17
2005 22
2006 24
2007 25
2008 43
2009 44
2010 48
2011 32
2012 44
2013 50
2014 56
2015 48
2016 56
2017 43
2018 44
2019 47
2020 55
2021 58
2022 47
2023 49
2024 38
2025 30
Total 1,038
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Gaudenzio Meneghesso publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Gaudenzio Meneghesso sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 974–993 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 990 publications — 98th percentile

98% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11 990
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Gaudenzio Meneghesso D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Gaudenzio Meneghesso sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 70 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 70 D-Index — 87th percentile

87% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57 70
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Research.com Recognitions

  • 2013 - IEEE Fellow For contributions to the reliability physics of compound semiconductors devices

Overview

Gaudenzio Meneghesso is affiliated with the University of Padua in Italy, where research focuses primarily on compound semiconductor devices. Their work spans the fields of engineering, physics and astronomy, and materials science with subfields including electrical and electronic engineering, condensed matter physics, atomic and molecular physics and optics, materials chemistry, and electronic, optical, and magnetic materials.

The main research topics include:

  • GaN-based semiconductor devices and materials
  • Semiconductor materials and devices
  • Ga2O3 and related materials
  • Semiconductor quantum structures and devices
  • Silicon carbide semiconductor technologies
  • Advancements in semiconductor devices and circuit design
  • ZnO doping and properties

Recent publications authored or co-authored by Gaudenzio Meneghesso cover various aspects of semiconductor physics and device reliability, including:

  • "GaN-based power devices: Physics, reliability, and perspectives," 2021, Journal of Applied Physics
  • "Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives," 2024, IEEE Transactions on Electron Devices
  • "Defects and Reliability of GaN-Based LEDs: Review and Perspectives," 2022, physica status solidi (a)
  • "Thermal droop in III-nitride based light-emitting diodes: Physical origin and perspectives," 2020, Journal of Applied Physics
  • "'Hole Redistribution' Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs," 2021, IEEE Transactions on Electron Devices

Frequent collaborators in their work include:

  • Matteo Meneghini
  • Enrico Zanoni
  • Carlo De Santi
  • Matteo Buffolo
  • Alessandro Caria

The most common venues for publication by Gaudenzio Meneghesso are:

  • Microelectronics Reliability
  • IEEE Transactions on Electron Devices
  • Journal of Physics D Applied Physics
  • Journal of Applied Physics
  • Applied Physics Letters

In recognition of contributions to the reliability physics of compound semiconductor devices, Gaudenzio Meneghesso was named an IEEE Fellow in 2013.

Best Publications

  • The 2018 GaN power electronics roadmap

    H Amano;Y Baines;Matteo Borga

  • Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

    G. Meneghesso;G. Verzellesi;F. Danesin;F. Rampazzo

  • GaN-based power devices: Physics, reliability, and perspectives

    Matteo Meneghini;Carlo De Santi;Idriss Abid;Matteo Buffolo

  • Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies

    Giovanni Verzellesi;Davide Saguatti;Matteo Meneghini;Francesco Bertazzi

  • Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements

    Davide Bisi;Matteo Meneghini;Carlo de Santi;Alessandro Chini

  • Surface-related drain current dispersion effects in AlGaN-GaN HEMTs

    G. Meneghesso;G. Verzellesi;R. Pierobon;F. Rampazzo

  • A Review on the Physical Mechanisms That Limit the Reliability of GaN-Based LEDs

    M. Meneghini;A. Tazzoli;G. Mura;G. Meneghesso

  • A Review on the Reliability of GaN-Based LEDs

    M. Meneghini;L.-R. Trevisanello;G. Meneghesso;E. Zanoni

  • Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

    Unknown

  • Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs

    G. Meneghesso;F. Rampazzo;P. Kordos;G. Verzellesi

  • Accelerated Life Test of High Brightness Light Emitting Diodes

    L. Trevisanello;M. Meneghini;G. Mura;M. Vanzi

  • Power GaN Devices

    Matteo Meneghini;Gaudenzio Meneghesso;Enrico Zanoni

  • Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements

    Matteo Meneghini;Isabella Rossetto;Davide Bisi;Antonio Stocco

  • Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method

    M. Meneghini;N. Ronchi;A. Stocco;G. Meneghesso

  • Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs

    M. Faqir;G. Verzellesi;G. Meneghesso;E. Zanoni

  • Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate

    Isabella Rossetto;Matteo Meneghini;Oliver Hilt;Eldad Bahat-Treidel

  • AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction

    Enrico Zanoni;Matteo Meneghini;Alessandro Chini;Denis Marcon

  • A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes

    Matteo Meneghini;Nicola Trivellin;Gaudenzio Meneghesso;Enrico Zanoni

  • Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate

    Matteo Meneghini;Oliver Hilt;Joachim Wuerfl;Gaudenzio Meneghesso

  • Evidence of Spiro-OMeTAD De-doping by tert-Butylpyridine Additive in Hole-Transporting Layers for Perovskite Solar Cells

    Francesco Lamberti;Francesco Lamberti;Teresa Gatti;Teresa Gatti;Enrico Cescon;Roberto Sorrentino

  • Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias

    Matteo Meneghini;Antonio Stocco;Marco Bertin;Denis Marcon

  • Reliability and parasitic issues in GaN-based power HEMTs: a review

    Gaudenzio Meneghesso;Matteo Meneghini;Isabella Rossetto;Davide Bisi

  • Reliability issues of Gallium Nitride High Electron Mobility Transistors

    Gaudenzio Meneghesso;Matteo Meneghini;Augusto Tazzoli;Nicolo' Ronchi

Frequent Co-Authors

Enrico Zanoni
Enrico Zanoni University of Padua
Matteo Meneghini
Matteo Meneghini University of Padua
Alessandro Chini
Alessandro Chini University of Modena and Reggio Emilia
Claudio Canali
Claudio Canali University of Modena and Reggio Emilia
Denis Marcon
Denis Marcon Imec
Alessandro Paccagnella
Alessandro Paccagnella University of Padua
Stefaan Decoutere
Stefaan Decoutere Imec
Tsuyoshi Tanaka
Tsuyoshi Tanaka Panasonic (Japan)
Steve Stoffels
Steve Stoffels Aluvia Photonics
Umesh K. Mishra
Umesh K. Mishra University of California, Santa Barbara

External Links

Personal website of Gaudenzio Meneghesso Google Scholar page

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Publications: 44

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Publications: 42

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