What is he best known for?
The fields of study he is best known for:
- Semiconductor
- Optoelectronics
- Transistor
Gaudenzio Meneghesso spends much of his time researching Optoelectronics, Gallium nitride, Wide-bandgap semiconductor, High-electron-mobility transistor and Transistor.
His Optoelectronics study combines topics in areas such as Voltage, Stress and Reliability.
His studies deal with areas such as Piezoelectricity, Electroluminescence, Ohmic contact, Threshold voltage and Substrate as well as Gallium nitride.
Gaudenzio Meneghesso has included themes like Quantum tunnelling, Electronic engineering, Passivation and Semiconductor in his Wide-bandgap semiconductor study.
The concepts of his High-electron-mobility transistor study are interwoven with issues in Gallium arsenide, Barrier layer, Leakage, Schottky barrier and Analytical chemistry.
The study incorporates disciplines such as Electron mobility, Condensed matter physics, Impact ionization and Power electronics in addition to Transistor.
His most cited work include:
- Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives (445 citations)
- The 2018 GaN power electronics roadmap (355 citations)
- Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies (286 citations)
What are the main themes of his work throughout his whole career to date?
Gaudenzio Meneghesso mainly investigates Optoelectronics, Gallium nitride, High-electron-mobility transistor, Light-emitting diode and Transistor.
His research in Optoelectronics intersects with topics in Voltage, Stress and Reliability.
His Gallium nitride study which covers Leakage that intersects with Breakdown voltage.
His High-electron-mobility transistor study integrates concerns from other disciplines, such as Impact ionization, Substrate and Analytical chemistry.
His research integrates issues of Quantum well, Wavelength and Phosphor in his study of Light-emitting diode.
His Transistor study incorporates themes from Transient and Logic gate.
He most often published in these fields:
- Optoelectronics (74.53%)
- Gallium nitride (26.93%)
- High-electron-mobility transistor (20.00%)
What were the highlights of his more recent work (between 2017-2021)?
- Optoelectronics (74.53%)
- Threshold voltage (10.27%)
- Transistor (18.13%)
In recent papers he was focusing on the following fields of study:
Optoelectronics, Threshold voltage, Transistor, Gallium nitride and Stress are his primary areas of study.
His study in Optoelectronics is interdisciplinary in nature, drawing from both Leakage and Voltage.
His work carried out in the field of Threshold voltage brings together such families of science as Diamond, High-electron-mobility transistor, Passivation, Condensed matter physics and Gate dielectric.
His Transistor research integrates issues from Semiconductor, Transient, Dielectric and Logic gate.
As part of the same scientific family, he usually focuses on Gallium nitride, concentrating on Engineering physics and intersecting with Power electronics.
His Stress research includes themes of Activation energy and Degradation.
Between 2017 and 2021, his most popular works were:
- The 2018 GaN power electronics roadmap (355 citations)
- Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors (24 citations)
- Evidence of Spiro-OMeTAD De-doping by tert-Butylpyridine Additive in Hole-Transporting Layers for Perovskite Solar Cells (21 citations)
In his most recent research, the most cited papers focused on:
- Semiconductor
- Electrical engineering
- Transistor
Gaudenzio Meneghesso mostly deals with Optoelectronics, Threshold voltage, Gallium nitride, Transistor and Leakage.
The various areas that Gaudenzio Meneghesso examines in his Optoelectronics study include Stress, Breakdown voltage and Epitaxy.
He has researched Threshold voltage in several fields, including Passivation, High-electron-mobility transistor, Oxide and Nanowire.
His studies in Gallium nitride integrate themes in fields like Thermionic emission, Electroluminescence and Atomic physics.
His Transistor research is multidisciplinary, incorporating perspectives in Wide-bandgap semiconductor, Transient, Logic gate and Dielectric.
His Diode research incorporates themes from Doping, Silicon photonics and Light-emitting diode.
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