World's Best Scientists 2026 revealed!
Steve Stoffels

Steve Stoffels

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
39
Citations
4227
World Ranking
4788
National Ranking
54

Steve Stoffels publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Steve Stoffels sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 125 publications — 8th percentile

8% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Steve Stoffels D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Steve Stoffels sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 39 D-Index — 33rd percentile

33% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Steve Stoffels is affiliated with Imec in Belgium and specializes in research within the fields of engineering and physics and astronomy. Their work primarily focuses on electrical and electronic engineering as well as condensed matter physics, with additional involvement in biomedical engineering and surgery.

Their research addresses semiconductor materials and devices, especially GaN-based semiconductor devices and materials. Other notable topics include Ga2O3 and related materials, silicon carbide semiconductor technologies, acoustic wave resonator technologies, ferroelectric and piezoelectric materials, and advanced sensor and energy harvesting materials.

Steve Stoffels has contributed to various scholarly publications. Selected recent papers include:

  • Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs, 2020, Applied Physics Express
  • Modeling of the Vertical Leakage Current in AlN/Si Heterojunctions for GaN Power Applications, 2020, IEEE Transactions on Electron Devices
  • Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices, 2020, Applied Physics Express
  • 78-2: A flat-panel-display compatible ultrasound platform, 2023, SID Symposium Digest of Technical Papers
  • Identification of Electrically Stressed Regions in AlGaN/GaN-on-Si Schottky Barrier Diode Using EBIC Technique, 2020, IEEE Transactions on Electron Devices

Frequent co-authors of Steve Stoffels include:

  • Stefaan Decoutere
  • Matteo Borga
  • Carlo De Santi
  • Gaudenzio Meneghesso
  • Enrico Zanoni

Throughout their career, Steve Stoffels has published in several prominent venues. These include:

  • Applied Physics Express
  • IEEE Transactions on Electron Devices
  • SID Symposium Digest of Technical Papers
  • Annals of Oncology

Best Publications

  • CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon

    M. Van Hove;S. Boulay;S. R. Bahl;S. Stoffels

  • Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

    Tian-Li Wu;Denis Marcon;Shuzhen You;Niels Posthuma

  • Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs

    Andrea Natale Tallarico;Steve Stoffels;Paolo Magnone;Niels Posthuma

  • Reliability and parasitic issues in GaN-based power HEMTs: a review

    Gaudenzio Meneghesso;Matteo Meneghini;Isabella Rossetto;Davide Bisi

  • Negative Bias-Induced Threshold Voltage Instability in GaN-on-Si Power HEMTs

    Matteo Meneghini;Isabella Rossetto;Davide Bisi;Maria Ruzzarin

  • Kinetics of Buffer-Related R ON -Increase in GaN-on-Silicon MIS-HEMTs

    Davide Bisi;Matteo Meneghini;Fabio Alessio Marino;Denis Marcon

  • Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop

    D. Marcon;J. Viaene;P. Favia;H. Bender

  • Analytical Model for the Threshold Voltage of ${p}$ -(Al)GaN High-Electron-Mobility Transistors

    Benoit Bakeroot;Arno Stockman;Niels Posthuma;Steve Stoffels

  • PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on $\Delta V_{\mathrm {TH}}$ and Underlying Degradation Mechanisms

    Andrea Natale Tallarico;Steve Stoffels;Niels Posthuma;Paolo Magnone

  • Analysis of the Gate Capacitance–Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures

    Tian-Li Wu;Benoit Bakeroot;Hu Liang;Niels Posthuma

  • Trapping and Reliability Assessment in D-Mode GaN-Based MIS-HEMTs for Power Applications

    Matteo Meneghini;Davide Bisi;Denis Marcon;Steve Stoffels

  • Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate

    Davide Bisi;Matteo Meneghini;Marleen Van Hove;Denis Marcon

  • Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate

    Jie Hu;Steve Stoffels;Silvia Lenci;Benoit Bakeroot

  • Reliability Analysis of Permanent Degradations on AlGaN/GaN HEMTs

    Denis Marcon;Gaudenzio Meneghesso;Tian-Li Wu;Steve Stoffels

  • An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology

    N. E. Posthuma;S. You;S. Stoffels;D. Wellekens

  • Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With ${ m Al}_{2}{ m O}_{3}$ and ${ m Si}_{3}{ m N}_{4}/{ m Al}_{2}{ m O}_{3}$ Gate Dielectrics

    Marleen Van Hove;Xuanwu Kang;Steve Stoffels;Dirk Wellekens

  • Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons

    M. Meneghini;D. Bisi;D. Marcon;S. Stoffels

  • Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs

    Tian-Li Wu;Jacopo Franco;Denis Marcon;Brice De Jaeger

  • On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors

    Benoit Bakeroot;S You;T-L Wu;J Hu

  • Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

    Tian-Li Wu;Denis Marcon;Benoit Bakeroot;Brice De Jaeger

  • GaN-on-SOI: Monolithically Integrated All-GaN ICs for Power Conversion

    X. Li;S. Stoffels;B. Bakeroot;D. Wellekens

  • Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs

    Tian-Li Wu;Denis Marcon;Brice De Jaeger;Marleen Van Hove

Frequent Co-Authors

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