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Steve Stoffels

Steve Stoffels

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
39
Citations
4227
World Ranking
4788
National Ranking
54

Overview

Steve Stoffels is affiliated with Imec in Belgium and specializes in research within the fields of engineering and physics and astronomy. Their work primarily focuses on electrical and electronic engineering as well as condensed matter physics, with additional involvement in biomedical engineering and surgery.

Their research addresses semiconductor materials and devices, especially GaN-based semiconductor devices and materials. Other notable topics include Ga2O3 and related materials, silicon carbide semiconductor technologies, acoustic wave resonator technologies, ferroelectric and piezoelectric materials, and advanced sensor and energy harvesting materials.

Steve Stoffels has contributed to various scholarly publications. Selected recent papers include:

  • Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs, 2020, Applied Physics Express
  • Modeling of the Vertical Leakage Current in AlN/Si Heterojunctions for GaN Power Applications, 2020, IEEE Transactions on Electron Devices
  • Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices, 2020, Applied Physics Express
  • 78-2: A flat-panel-display compatible ultrasound platform, 2023, SID Symposium Digest of Technical Papers
  • Identification of Electrically Stressed Regions in AlGaN/GaN-on-Si Schottky Barrier Diode Using EBIC Technique, 2020, IEEE Transactions on Electron Devices

Frequent co-authors of Steve Stoffels include:

  • Stefaan Decoutere
  • Matteo Borga
  • Carlo De Santi
  • Gaudenzio Meneghesso
  • Enrico Zanoni

Throughout their career, Steve Stoffels has published in several prominent venues. These include:

  • Applied Physics Express
  • IEEE Transactions on Electron Devices
  • SID Symposium Digest of Technical Papers
  • Annals of Oncology

Best Publications

  • CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon

    M. Van Hove;S. Boulay;S. R. Bahl;S. Stoffels

  • Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

    Tian-Li Wu;Denis Marcon;Shuzhen You;Niels Posthuma

  • Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs

    Andrea Natale Tallarico;Steve Stoffels;Paolo Magnone;Niels Posthuma

  • Reliability and parasitic issues in GaN-based power HEMTs: a review

    Gaudenzio Meneghesso;Matteo Meneghini;Isabella Rossetto;Davide Bisi

  • Negative Bias-Induced Threshold Voltage Instability in GaN-on-Si Power HEMTs

    Matteo Meneghini;Isabella Rossetto;Davide Bisi;Maria Ruzzarin

  • Kinetics of Buffer-Related R ON -Increase in GaN-on-Silicon MIS-HEMTs

    Davide Bisi;Matteo Meneghini;Fabio Alessio Marino;Denis Marcon

  • Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop

    D. Marcon;J. Viaene;P. Favia;H. Bender

  • Analytical Model for the Threshold Voltage of ${p}$ -(Al)GaN High-Electron-Mobility Transistors

    Benoit Bakeroot;Arno Stockman;Niels Posthuma;Steve Stoffels

  • PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on $\Delta V_{\mathrm {TH}}$ and Underlying Degradation Mechanisms

    Andrea Natale Tallarico;Steve Stoffels;Niels Posthuma;Paolo Magnone

  • Analysis of the Gate Capacitance–Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures

    Tian-Li Wu;Benoit Bakeroot;Hu Liang;Niels Posthuma

  • Trapping and Reliability Assessment in D-Mode GaN-Based MIS-HEMTs for Power Applications

    Matteo Meneghini;Davide Bisi;Denis Marcon;Steve Stoffels

  • Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate

    Davide Bisi;Matteo Meneghini;Marleen Van Hove;Denis Marcon

  • Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate

    Jie Hu;Steve Stoffels;Silvia Lenci;Benoit Bakeroot

  • Reliability Analysis of Permanent Degradations on AlGaN/GaN HEMTs

    Denis Marcon;Gaudenzio Meneghesso;Tian-Li Wu;Steve Stoffels

  • An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology

    N. E. Posthuma;S. You;S. Stoffels;D. Wellekens

  • Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With ${ m Al}_{2}{ m O}_{3}$ and ${ m Si}_{3}{ m N}_{4}/{ m Al}_{2}{ m O}_{3}$ Gate Dielectrics

    Marleen Van Hove;Xuanwu Kang;Steve Stoffels;Dirk Wellekens

  • Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons

    M. Meneghini;D. Bisi;D. Marcon;S. Stoffels

  • Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs

    Tian-Li Wu;Jacopo Franco;Denis Marcon;Brice De Jaeger

  • On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors

    Benoit Bakeroot;S You;T-L Wu;J Hu

  • Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

    Tian-Li Wu;Denis Marcon;Benoit Bakeroot;Brice De Jaeger

  • GaN-on-SOI: Monolithically Integrated All-GaN ICs for Power Conversion

    X. Li;S. Stoffels;B. Bakeroot;D. Wellekens

  • Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs

    Tian-Li Wu;Denis Marcon;Brice De Jaeger;Marleen Van Hove

Frequent Co-Authors

Matteo Meneghini
Matteo Meneghini University of Padua
Gaudenzio Meneghesso
Gaudenzio Meneghesso University of Padua
Enrico Zanoni
Enrico Zanoni University of Padua
Robert Puers
Robert Puers KU Leuven
Claudio Fiegna
Claudio Fiegna University of Bologna
Martin Kuball
Martin Kuball University of Bristol

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