Denis Marcon

Overview

Best Publications

• The 2018 GaN power electronics roadmap

  H Amano;Y Baines;Matteo Borga

  1273
  Citations

• Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

  Tian-Li Wu;Denis Marcon;Shuzhen You;Niels Posthuma

  212
  Citations

• Silicon Substrate Removal of GaN DHFETs for Enhanced (<1100 V) Breakdown Voltage

  Puneet Srivastava;Jo Das;Domenica Visalli;Joff Derluyn

  185
  Citations

• AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction

  Enrico Zanoni;Matteo Meneghini;Alessandro Chini;Denis Marcon

  168
  Citations

• Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias

  Matteo Meneghini;Antonio Stocco;Marco Bertin;Denis Marcon

  153
  Citations

• Low On-Resistance High-Breakdown Normally Off AlN/GaN/AlGaN DHFET on Si Substrate

  F. Medjdoub;J. Derluyn;K. Cheng;M. Leys

  149
  Citations

• Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2- $\mu\hbox{m}$ Buffer Thickness by Local Substrate Removal

  Puneet Srivastava;Jo Das;Domenica Visalli;Marleen Van Hove

  148
  Citations

• Negative Bias-Induced Threshold Voltage Instability in GaN-on-Si Power HEMTs

  Matteo Meneghini;Isabella Rossetto;Davide Bisi;Maria Ruzzarin

  130
  Citations

• Kinetics of Buffer-Related R ON -Increase in GaN-on-Silicon MIS-HEMTs

  Davide Bisi;Matteo Meneghini;Fabio Alessio Marino;Denis Marcon

  125
  Citations

• Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop

  D. Marcon;J. Viaene;P. Favia;H. Bender

  120
  Citations

• A comprehensive reliability investigation of the voltage-, temperature- and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs

  D. Marcon;T. Kauerauf;F. Medjdoub;J. Das

  110
  Citations

• PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on $\Delta V_{\mathrm {TH}}$ and Underlying Degradation Mechanisms

  Andrea Natale Tallarico;Steve Stoffels;Niels Posthuma;Paolo Magnone

  108
  Citations

• Analysis of the Gate Capacitance–Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures

  Tian-Li Wu;Benoit Bakeroot;Hu Liang;Niels Posthuma

  106
  Citations

• Trapping and Reliability Assessment in D-Mode GaN-Based MIS-HEMTs for Power Applications

  Matteo Meneghini;Davide Bisi;Denis Marcon;Steve Stoffels

  105
  Citations

• Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate

  Davide Bisi;Matteo Meneghini;Marleen Van Hove;Denis Marcon

  93
  Citations

• Reliability Analysis of Permanent Degradations on AlGaN/GaN HEMTs

  Denis Marcon;Gaudenzio Meneghesso;Tian-Li Wu;Steve Stoffels

  90
  Citations

• Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons

  M. Meneghini;D. Bisi;D. Marcon;S. Stoffels

  85
  Citations

• 200mm GaN-on-Si epitaxy and e-mode device technology

  D. Marcon;Y. N. Saripalli;S. Decoutere

  78
  Citations

• Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs

  Tian-Li Wu;Jacopo Franco;Denis Marcon;Brice De Jaeger

  77
  Citations

• A 96% Efficient High-Frequency DC–DC Converter Using E-Mode GaN DHFETs on Si

  J. Das;J. Everts;J. Van Den Keybus;M. Van Hove

  69
  Citations

• GaN-on-SOI: Monolithically Integrated All-GaN ICs for Power Conversion

  X. Li;S. Stoffels;B. Bakeroot;D. Wellekens

  69
  Citations