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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
48
Citations
8118
World Ranking
3107
National Ranking
1166

Overview

Yuhao Zhang is a researcher affiliated with Virginia Tech in the United States, focusing primarily on engineering, materials science, and physics and astronomy. Their expertise spans electrical and electronic engineering, electronic, optical and magnetic materials, condensed matter physics, materials chemistry, and renewable energy, sustainability and the environment.

Their main research topics include:

  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • Silicon Carbide Semiconductor Technologies
  • ZnO doping and properties
  • Semiconductor materials and devices
  • Advanced Photocatalysis Techniques
  • Radio Frequency Integrated Circuit Design

Yuhao Zhang has contributed to several journals and conferences, with frequent publication venues including:

  • IEEE Transactions on Power Electronics
  • IEEE Electron Device Letters
  • IEEE Transactions on Electron Devices
  • Applied Physics Letters
  • ECS Meeting Abstracts

The researcher has collaborated with several frequent coauthors, notably Ming Xiao, Ruizhe Zhang, Qihao Song, Boyan Wang, and Yuan Qin. These collaborations have resulted in numerous publications advancing semiconductor technology and device architectures.

Selected recent papers by Yuhao Zhang include:

  • "Multidimensional device architectures for efficient power electronics," 2022, published in Nature Electronics
  • "A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and Sc2O3," 2022, published in Applied Physics Reviews (authored by Joseph Spencer, related work)
  • "Stability, Reliability, and Robustness of GaN Power Devices: A Review," 2023, published in IEEE Transactions on Power Electronics (authored by Joseph P. Kozak, related work)
  • "Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects," 2021, published in Journal of Applied Physics (authored by Koon Hoo Teo, related work)
  • "An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics," 2023, published in Nature Communications (authored by Feng Zhou, related work)

Their research emphasizes advancements in the performance, reliability, and material properties of semiconductor devices, particularly focusing on wide-bandgap materials like GaN and Ga2O3. The intersection of device architecture innovation and material science is a consistent theme throughout their work.

Best Publications

  • The 2018 GaN power electronics roadmap

    H Amano;Y Baines;Matteo Borga

  • Two-dimensional MoS2-enabled flexible rectenna for Wi-Fi-band wireless energy harvesting.

    Xu Zhang;Jesús Grajal;Jose Luis Vazquez-Roy;Ujwal Radhakrishna

  • High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates

    Min Sun;Yuhao Zhang;Xiang Gao;Tomas Palacios

  • Gallium nitride vertical power devices on foreign substrates: a review and outlook

    Yuhao Zhang;Armin Dadgar;Tomás Palacios

  • High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits.

    Lili Yu;Ahmad Zubair;Elton J G Santos;Xu Zhang

  • Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects

    Koon Hoo Teo;Yuhao Zhang;Nadim Chowdhury;Shaloo Rakheja

  • GaN-on-Si Vertical Schottky and p-n Diodes

    Yuhao Zhang;Min Sun;Daniel Piedra;Mohamed Azize

  • Vertical Ga 2 O 3 Schottky Barrier Diodes With Small-Angle Beveled Field Plates: A Baliga’s Figure-of-Merit of 0.6 GW/cm 2

    Noah Allen;Ming Xiao;Xiaodong Yan;Kohei Sasaki

  • Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors

    Yuhao Zhang;Min Sun;Zhihong Liu;D. Piedra

  • Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation

    Yuhao Zhang;Zhihong Liu;Marko J. Tadjer;Min Sun

  • Design, Modeling, and Fabrication of Chemical Vapor Deposition Grown MoS2 Circuits with E-Mode FETs for Large-Area Electronics.

    Lili Yu;Dina El-Damak;Ujwal Radhakrishna;Xi Ling

  • Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes

    Yuhao Zhang;Min Sun;Hiu-Yung Wong;Yuxuan Lin

  • Materials and processing issues in vertical GaN power electronics

    Jie Hu;Yuhao Zhang;Min Sun;Daniel Piedra

  • Large-Area 1.2-kV GaN Vertical Power FinFETs With a Record Switching Figure of Merit

    Yuhao Zhang;Min Sun;Josh Perozek;Zhihong Liu

  • Trench formation and corner rounding in vertical GaN power devices

    Yuhao Zhang;Min Sun;Zhihong Liu;Daniel Piedra

  • Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors

    Yuhao Zhang;Min Sun;Sameer Jayanta Joglekar;Tatsuya Fujishima

  • p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si

    Nadim Chowdhury;Jori Lemettinen;Qingyun Xie;Yuhao Zhang

  • GaN FinFETs and trigate devices for power and RF applications: review and perspective

    Yuhao Zhang;Ahmad Zubair;Zhihong Liu;Ming Xiao

  • 1200 V GaN vertical fin power field-effect transistors

    Y. Zhang;M. Sun;D. Piedra;J. Hu

  • Surge-Energy and Overvoltage Ruggedness of P-Gate GaN HEMTs

    Ruizhe Zhang;Joseph P. Kozak;Ming Xiao;Jingcun Liu

  • 720-V/0.35-m $\Omega \cdot$ cm 2 Fully Vertical GaN-on-Si Power Diodes by Selective Removal of Si Substrates and Buffer Layers

    Yuhao Zhang;Mengyang Yuan;Nadim Chowdhury;Kai Cheng

  • Design space and origin of off-state leakage in GaN vertical power diodes

    Y Zhang;H.-Y. Wong;M. Sun;S. Joglekar

Frequent Co-Authors

Han Wang
Han Wang University of Southern California
Xi Ling
Xi Ling Boston University
Koon Hoo Teo
Koon Hoo Teo Mitsubishi Electric (United States)
Yu Cao
Yu Cao Zhejiang University
Akira Uedono
Akira Uedono University of Tsukuba

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