World's Best Scientists 2026 revealed!
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Yuhao Zhang

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 48 3107 2977 1167 1089 108 8118

Yuhao Zhang publications per year

The chart shows the history of publications by Yuhao Zhang between 2009 and 2026, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Yuhao Zhang published across 18 years, from 2009 to 2026, averaging 15.6 papers a year. Output peaked at 50 publications in 2023. 44 of the 281 publications appeared in the last two years.

No. of publications
10 20 30 40 50
Bar chart. Horizontal axis: year, 2009 to 2026. Vertical axis: number of publications, 0 to 50. Peak 50 publications in 2023. 2009: 1 publication 2010: 0 publications 2011: 3 publications 2012: 1 publication 2013: 5 publications 2014: 5 publications 2015: 8 publications 2016: 11 publications 2017: 8 publications 2018: 6 publications 2019: 14 publications 2020: 28 publications 2021: 21 publications 2022: 28 publications 2023: 50 publications 2024: 48 publications 2025: 43 publications 2026: 1 publication
2009 2026

281 publications in total across all disciplines

View publications per year as a table
Yuhao Zhang: publications per year, 2009 to 2026
Year Publications
2009 1
2010 0
2011 3
2012 1
2013 5
2014 5
2015 8
2016 11
2017 8
2018 6
2019 14
2020 28
2021 21
2022 28
2023 50
2024 48
2025 43
2026 1
Total 281
Download as CSV

Yuhao Zhang publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Yuhao Zhang sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 94–113 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 108 publications — 5th percentile

5% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203 108
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
Download as CSV

Yuhao Zhang D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Yuhao Zhang sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 48 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 48 D-Index — 56th percentile

56% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134 48
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Overview

Yuhao Zhang is a researcher affiliated with Virginia Tech in the United States, focusing primarily on engineering, materials science, and physics and astronomy. Their expertise spans electrical and electronic engineering, electronic, optical and magnetic materials, condensed matter physics, materials chemistry, and renewable energy, sustainability and the environment.

Their main research topics include:

  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • Silicon Carbide Semiconductor Technologies
  • ZnO doping and properties
  • Semiconductor materials and devices
  • Advanced Photocatalysis Techniques
  • Radio Frequency Integrated Circuit Design

Yuhao Zhang has contributed to several journals and conferences, with frequent publication venues including:

  • IEEE Transactions on Power Electronics
  • IEEE Electron Device Letters
  • IEEE Transactions on Electron Devices
  • Applied Physics Letters
  • ECS Meeting Abstracts

The researcher has collaborated with several frequent coauthors, notably Ming Xiao, Ruizhe Zhang, Qihao Song, Boyan Wang, and Yuan Qin. These collaborations have resulted in numerous publications advancing semiconductor technology and device architectures.

Selected recent papers by Yuhao Zhang include:

  • "Multidimensional device architectures for efficient power electronics," 2022, published in Nature Electronics
  • "A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and Sc2O3," 2022, published in Applied Physics Reviews (authored by Joseph Spencer, related work)
  • "Stability, Reliability, and Robustness of GaN Power Devices: A Review," 2023, published in IEEE Transactions on Power Electronics (authored by Joseph P. Kozak, related work)
  • "Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects," 2021, published in Journal of Applied Physics (authored by Koon Hoo Teo, related work)
  • "An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics," 2023, published in Nature Communications (authored by Feng Zhou, related work)

Their research emphasizes advancements in the performance, reliability, and material properties of semiconductor devices, particularly focusing on wide-bandgap materials like GaN and Ga2O3. The intersection of device architecture innovation and material science is a consistent theme throughout their work.

Best Publications

  • The 2018 GaN power electronics roadmap

    H Amano;Y Baines;Matteo Borga

  • Two-dimensional MoS2-enabled flexible rectenna for Wi-Fi-band wireless energy harvesting.

    Xu Zhang;Jesús Grajal;Jose Luis Vazquez-Roy;Ujwal Radhakrishna

  • High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates

    Min Sun;Yuhao Zhang;Xiang Gao;Tomas Palacios

  • Gallium nitride vertical power devices on foreign substrates: a review and outlook

    Yuhao Zhang;Armin Dadgar;Tomás Palacios

  • High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits.

    Lili Yu;Ahmad Zubair;Elton J G Santos;Xu Zhang

  • Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects

    Koon Hoo Teo;Yuhao Zhang;Nadim Chowdhury;Shaloo Rakheja

  • GaN-on-Si Vertical Schottky and p-n Diodes

    Yuhao Zhang;Min Sun;Daniel Piedra;Mohamed Azize

  • Vertical Ga 2 O 3 Schottky Barrier Diodes With Small-Angle Beveled Field Plates: A Baliga’s Figure-of-Merit of 0.6 GW/cm 2

    Noah Allen;Ming Xiao;Xiaodong Yan;Kohei Sasaki

  • Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors

    Yuhao Zhang;Min Sun;Zhihong Liu;D. Piedra

  • Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation

    Yuhao Zhang;Zhihong Liu;Marko J. Tadjer;Min Sun

  • Design, Modeling, and Fabrication of Chemical Vapor Deposition Grown MoS2 Circuits with E-Mode FETs for Large-Area Electronics.

    Lili Yu;Dina El-Damak;Ujwal Radhakrishna;Xi Ling

  • Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes

    Yuhao Zhang;Min Sun;Hiu-Yung Wong;Yuxuan Lin

  • Materials and processing issues in vertical GaN power electronics

    Jie Hu;Yuhao Zhang;Min Sun;Daniel Piedra

  • Large-Area 1.2-kV GaN Vertical Power FinFETs With a Record Switching Figure of Merit

    Yuhao Zhang;Min Sun;Josh Perozek;Zhihong Liu

  • Trench formation and corner rounding in vertical GaN power devices

    Yuhao Zhang;Min Sun;Zhihong Liu;Daniel Piedra

  • Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors

    Yuhao Zhang;Min Sun;Sameer Jayanta Joglekar;Tatsuya Fujishima

  • p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si

    Nadim Chowdhury;Jori Lemettinen;Qingyun Xie;Yuhao Zhang

  • GaN FinFETs and trigate devices for power and RF applications: review and perspective

    Yuhao Zhang;Ahmad Zubair;Zhihong Liu;Ming Xiao

  • 1200 V GaN vertical fin power field-effect transistors

    Y. Zhang;M. Sun;D. Piedra;J. Hu

  • Surge-Energy and Overvoltage Ruggedness of P-Gate GaN HEMTs

    Ruizhe Zhang;Joseph P. Kozak;Ming Xiao;Jingcun Liu

  • 720-V/0.35-m $\Omega \cdot$ cm 2 Fully Vertical GaN-on-Si Power Diodes by Selective Removal of Si Substrates and Buffer Layers

    Yuhao Zhang;Mengyang Yuan;Nadim Chowdhury;Kai Cheng

  • Design space and origin of off-state leakage in GaN vertical power diodes

    Y Zhang;H.-Y. Wong;M. Sun;S. Joglekar

Frequent Co-Authors

Tomas Palacios
Tomas Palacios MIT
Han Wang
Han Wang University of Southern California
Jing Kong
Jing Kong MIT
Xi Ling
Xi Ling Boston University
Koon Hoo Teo
Koon Hoo Teo Mitsubishi Electric (United States)
Anantha P. Chandrakasan
Anantha P. Chandrakasan MIT
Yu Cao
Yu Cao Zhejiang University
Akira Uedono
Akira Uedono University of Tsukuba
Dimitri A. Antoniadis
Dimitri A. Antoniadis MIT
Mildred S. Dresselhaus
Mildred S. Dresselhaus MIT

External Links

Personal website of Yuhao Zhang

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Related Online Degrees & Career Pathways

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By exploring these linked programs and career insights, students can tailor their educational journeys effectively, ensuring both academic success and a fulfilling professional future.

Best Scientists Citing Yuhao Zhang

Yue Hao

Yue Hao

Xidian University

Publications: 53

Jincheng Zhang

Jincheng Zhang

Xidian University

Publications: 37

Matteo Meneghini

Matteo Meneghini

University of Padua

Publications: 36

Debdeep Jena

Debdeep Jena

Cornell University

Publications: 35

Gaudenzio Meneghesso

Gaudenzio Meneghesso

University of Padua

Publications: 32

Huili Grace Xing

Huili Grace Xing

Cornell University

Publications: 32

Enrico Zanoni

Enrico Zanoni

University of Padua

Publications: 31

Elison Matioli

Elison Matioli

École Polytechnique Fédérale de Lausanne

Publications: 30

Kazuki Nomoto

Kazuki Nomoto

Cornell University

Publications: 25

Hong Zhou

Hong Zhou

Xidian University

Publications: 24

Michal Bockowski

Michal Bockowski

Polish Academy of Sciences

Publications: 22

Rong Zhang

Rong Zhang

Nanjing University

Publications: 22

Tomas Palacios

Tomas Palacios

MIT

Publications: 22

David Wei Zhang

David Wei Zhang

Fudan University

Publications: 19

Youdou Zheng

Youdou Zheng

Nanjing University

Publications: 17

Kevin J. Chen

Kevin J. Chen

Hong Kong University of Science and Technology

Publications: 17

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Matthias Militzer

University of British Columbia

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Luciano Bononi

University of Bologna

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Chuan-Liang Kao

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Tallie Z. Baram

Tallie Z. Baram

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Madhav Bhatia

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Sanjit A. Seshia

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Ruchika Malhotra

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Xiaodong Wang

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