World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
48
Citations
8118
World Ranking
3107
National Ranking
1167

Yuhao Zhang publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Yuhao Zhang sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 108 publications — 5th percentile

5% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Yuhao Zhang D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Yuhao Zhang sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 48 D-Index — 56th percentile

56% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Yuhao Zhang is a researcher affiliated with Virginia Tech in the United States, focusing primarily on engineering, materials science, and physics and astronomy. Their expertise spans electrical and electronic engineering, electronic, optical and magnetic materials, condensed matter physics, materials chemistry, and renewable energy, sustainability and the environment.

Their main research topics include:

  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • Silicon Carbide Semiconductor Technologies
  • ZnO doping and properties
  • Semiconductor materials and devices
  • Advanced Photocatalysis Techniques
  • Radio Frequency Integrated Circuit Design

Yuhao Zhang has contributed to several journals and conferences, with frequent publication venues including:

  • IEEE Transactions on Power Electronics
  • IEEE Electron Device Letters
  • IEEE Transactions on Electron Devices
  • Applied Physics Letters
  • ECS Meeting Abstracts

The researcher has collaborated with several frequent coauthors, notably Ming Xiao, Ruizhe Zhang, Qihao Song, Boyan Wang, and Yuan Qin. These collaborations have resulted in numerous publications advancing semiconductor technology and device architectures.

Selected recent papers by Yuhao Zhang include:

  • "Multidimensional device architectures for efficient power electronics," 2022, published in Nature Electronics
  • "A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and Sc2O3," 2022, published in Applied Physics Reviews (authored by Joseph Spencer, related work)
  • "Stability, Reliability, and Robustness of GaN Power Devices: A Review," 2023, published in IEEE Transactions on Power Electronics (authored by Joseph P. Kozak, related work)
  • "Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects," 2021, published in Journal of Applied Physics (authored by Koon Hoo Teo, related work)
  • "An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics," 2023, published in Nature Communications (authored by Feng Zhou, related work)

Their research emphasizes advancements in the performance, reliability, and material properties of semiconductor devices, particularly focusing on wide-bandgap materials like GaN and Ga2O3. The intersection of device architecture innovation and material science is a consistent theme throughout their work.

Best Publications

  • The 2018 GaN power electronics roadmap

    H Amano;Y Baines;Matteo Borga

  • Two-dimensional MoS2-enabled flexible rectenna for Wi-Fi-band wireless energy harvesting.

    Xu Zhang;Jesús Grajal;Jose Luis Vazquez-Roy;Ujwal Radhakrishna

  • High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates

    Min Sun;Yuhao Zhang;Xiang Gao;Tomas Palacios

  • Gallium nitride vertical power devices on foreign substrates: a review and outlook

    Yuhao Zhang;Armin Dadgar;Tomás Palacios

  • High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits.

    Lili Yu;Ahmad Zubair;Elton J G Santos;Xu Zhang

  • Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects

    Koon Hoo Teo;Yuhao Zhang;Nadim Chowdhury;Shaloo Rakheja

  • GaN-on-Si Vertical Schottky and p-n Diodes

    Yuhao Zhang;Min Sun;Daniel Piedra;Mohamed Azize

  • Vertical Ga 2 O 3 Schottky Barrier Diodes With Small-Angle Beveled Field Plates: A Baliga’s Figure-of-Merit of 0.6 GW/cm 2

    Noah Allen;Ming Xiao;Xiaodong Yan;Kohei Sasaki

  • Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors

    Yuhao Zhang;Min Sun;Zhihong Liu;D. Piedra

  • Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation

    Yuhao Zhang;Zhihong Liu;Marko J. Tadjer;Min Sun

  • Design, Modeling, and Fabrication of Chemical Vapor Deposition Grown MoS2 Circuits with E-Mode FETs for Large-Area Electronics.

    Lili Yu;Dina El-Damak;Ujwal Radhakrishna;Xi Ling

  • Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes

    Yuhao Zhang;Min Sun;Hiu-Yung Wong;Yuxuan Lin

  • Materials and processing issues in vertical GaN power electronics

    Jie Hu;Yuhao Zhang;Min Sun;Daniel Piedra

  • Large-Area 1.2-kV GaN Vertical Power FinFETs With a Record Switching Figure of Merit

    Yuhao Zhang;Min Sun;Josh Perozek;Zhihong Liu

  • Trench formation and corner rounding in vertical GaN power devices

    Yuhao Zhang;Min Sun;Zhihong Liu;Daniel Piedra

  • Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors

    Yuhao Zhang;Min Sun;Sameer Jayanta Joglekar;Tatsuya Fujishima

  • p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si

    Nadim Chowdhury;Jori Lemettinen;Qingyun Xie;Yuhao Zhang

  • GaN FinFETs and trigate devices for power and RF applications: review and perspective

    Yuhao Zhang;Ahmad Zubair;Zhihong Liu;Ming Xiao

  • 1200 V GaN vertical fin power field-effect transistors

    Y. Zhang;M. Sun;D. Piedra;J. Hu

  • Surge-Energy and Overvoltage Ruggedness of P-Gate GaN HEMTs

    Ruizhe Zhang;Joseph P. Kozak;Ming Xiao;Jingcun Liu

  • 720-V/0.35-m $\Omega \cdot$ cm 2 Fully Vertical GaN-on-Si Power Diodes by Selective Removal of Si Substrates and Buffer Layers

    Yuhao Zhang;Mengyang Yuan;Nadim Chowdhury;Kai Cheng

  • Design space and origin of off-state leakage in GaN vertical power diodes

    Y Zhang;H.-Y. Wong;M. Sun;S. Joglekar

Frequent Co-Authors

Han Wang
Han Wang University of Southern California
Xi Ling
Xi Ling Boston University
Koon Hoo Teo
Koon Hoo Teo Mitsubishi Electric (United States)
Yu Cao
Yu Cao Zhejiang University
Akira Uedono
Akira Uedono University of Tsukuba

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