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Akira Uedono

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 44 11951 11554 747 712 550 9210

Akira Uedono publications per year

The chart shows the history of publications by Akira Uedono between 1985 and 2026, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Akira Uedono published across 42 years, from 1985 to 2026, averaging 13.9 papers a year. Output peaked at 25 publications in 1992. 14 of the 585 publications appeared in the last two years.

No. of publications
5 10 15 20 25
Bar chart. Horizontal axis: year, 1985 to 2026. Vertical axis: number of publications, 0 to 25. Peak 25 publications in 1992. 1985: 2 publications 1986: 1 publication 1987: 0 publications 1988: 7 publications 1989: 2 publications 1990: 9 publications 1991: 6 publications 1992: 25 publications 1993: 12 publications 1994: 19 publications 1995: 16 publications 1996: 16 publications 1997: 12 publications 1998: 10 publications 1999: 6 publications 2000: 10 publications 2001: 14 publications 2002: 11 publications 2003: 13 publications 2004: 16 publications 2005: 11 publications 2006: 20 publications 2007: 20 publications 2008: 16 publications 2009: 17 publications 2010: 17 publications 2011: 13 publications 2012: 21 publications 2013: 22 publications 2014: 17 publications 2015: 14 publications 2016: 22 publications 2017: 16 publications 2018: 24 publications 2019: 24 publications 2020: 25 publications 2021: 19 publications 2022: 16 publications 2023: 18 publications 2024: 12 publications 2025: 13 publications 2026: 1 publication
1985 2026

585 publications in total across all disciplines

View publications per year as a table
Akira Uedono: publications per year, 1985 to 2026
Year Publications
1985 2
1986 1
1987 0
1988 7
1989 2
1990 9
1991 6
1992 25
1993 12
1994 19
1995 16
1996 16
1997 12
1998 10
1999 6
2000 10
2001 14
2002 11
2003 13
2004 16
2005 11
2006 20
2007 20
2008 16
2009 17
2010 17
2011 13
2012 21
2013 22
2014 17
2015 14
2016 22
2017 16
2018 24
2019 24
2020 25
2021 19
2022 16
2023 18
2024 12
2025 13
2026 1
Total 585
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Akira Uedono publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Akira Uedono sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 550–569 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 550 publications — 90th percentile

90% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131 550
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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Akira Uedono D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Akira Uedono sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 44–45 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 44 D-Index — 7th percentile

7% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612 44
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Overview

Akira Uedono is affiliated with the University of Tsukuba in Japan and has contributed extensively to research in engineering, materials science, and physics and astronomy. Their publication record includes over one hundred works predominantly focusing on electrical and electronic engineering, mechanics of materials, condensed matter physics, materials chemistry, and electronic, optical, and magnetic materials.

Their research topics center largely on semiconductor materials and devices, with a particular emphasis on GaN-based semiconductor devices and materials. Other significant subjects of study include muon and positron interactions and applications, Ga2O3 and related materials, metal and thin film mechanics, ZnO doping and properties, and copper interconnects and reliability.

Uedono has frequently published in venues such as the Journal of Applied Physics, Japanese Journal of Applied Physics, Applied Physics Letters, physica status solidi (b), and ACS Applied Polymer Materials.

Frequent collaborators of Uedono include Shoji Ishibashi, Shigefusa F. Chichibu, Kohei Shima, Fumihiro Inoue, and Michał Boćkowski.

Selected recent papers authored or coauthored by Uedono include:

  • "Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam," 2020, Scientific Reports
  • "Annealing behaviors of vacancy-type defects in AlN deposited by radio-frequency sputtering and metalorganic vapor phase epitaxy studied using monoenergetic positron beams," 2020, Journal of Applied Physics
  • "Origin of Voids at the SiO2/SiO2 and SiCN/SiCN Bonding Interface Using Positron Annihilation Spectroscopy and Electron Spin Resonance," 2023, ECS Journal of Solid State Science and Technology

  • "Effect of free-volume holes on static mechanical properties of epoxy resins studied by positron annihilation and PVT experiments," 2020, Polymer
  • "Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg," 2021, Applied Physics Letters

Their work often examines vacancy-type defects and the effects of advanced annealing techniques on semiconductor materials, employing methods such as monoenergetic positron beams and positron annihilation spectroscopy. This positions them well within the subfields involving material defect analysis and semiconductor device optimization.

Best Publications

  • Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.

    Shigefusa F. Chichibu;Akira Uedono;Akira Uedono;Takeyoshi Onuma;Benjamin A. Haskell

  • Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnO

    T. Koida;S. F. Chichibu;A. Uedono;A. Tsukazaki

  • Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques

    S. F. Chichibu;A. Uedono;A. Uedono;T. Onuma;T. Sota

  • Defects in ZnO thin films grown on ScAlMgO4 substrates probed by a monoenergetic positron beam

    A. Uedono;T. Koida;A. Tsukazaki;M. Kawasaki

  • The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN

    S. F. Chichibu;S. F. Chichibu;A. Uedono;K. Kojima;H. Ikeda

  • Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0.6Ga0.4N films grown on AlN templates by metalorganic vapor phase epitaxy

    S. F. Chichibu;H. Miyake;Y. Ishikawa;M. Tashiro

  • Improvements in quantum efficiency of excitonic emissions in ZnO epilayers by the elimination of point defects

    S. F. Chichibu;T. Onuma;M. Kubota;A. Uedono;A. Uedono

  • Radiative and nonradiative processes in strain-free AlxGa1−xN films studied by time-resolved photoluminescence and positron annihilation techniques

    Takeyoshi Onuma;Shigefusa F. Chichibu;Akira Uedono;Takayuki Sota

  • Study of defects in GaN grown by the two-flow metalorganic chemical vapor deposition technique using monoenergetic positron beams

    A. Uedono;S. F. Chichibu;Z. Q. Chen;M. Sumiya

  • Study of oxygen vacancies in SrTiO3 by positron annihilation

    Akira Uedono;Kazuo Shimayama;Masahiro Kiyohara;Zhi Quan Chen

  • Effect of La doping on the lattice defects and photoluminescence properties of CuO

    L. Vimala Devi;T. Selvalakshmi;S. Sellaiyan;A. Uedono

  • Relation between Al vacancies and deep emission bands in AlN epitaxial films grown by NH3-source molecular beam epitaxy

    T. Koyama;M. Sugawara;T. Hoshi;A. Uedono

  • Time-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by hydride vapor phase epitaxy

    S. F. Chichibu;K. Hazu;Y. Ishikawa;M. Tashiro

  • Exciton-polariton spectra and limiting factors for the room-temperature photoluminescence efficiency in ZnO

    S F Chichibu;A Uedono;A Tsukazaki;T Onuma

  • Generation of thermal muonium in vacuum

    A. P. Mills;J. Imazato;S. Saitoh;A. Uedono

  • Nitrogen vacancies as a common element of the green luminescence and nonradiative recombination centers in Mg-implanted GaN layers formed on a GaN substrate

    Kazunobu Kojima;Shinya Takashima;Masaharu Edo;Katsunori Ueno

  • Synthesis, defect characterization and photocatalytic degradation efficiency of Tb doped CuO nanoparticles

    L. Vimala Devi;S. Sellaiyan;T. Selvalakshmi;H.J. Zhang

  • Vacancy-type defects and their annealing behaviors in Mg-implanted GaN studied by a monoenergetic positron beam

    Akira Uedono;Shinya Takashima;Masaharu Edo;Katsunori Ueno

  • Impact of growth polar direction on the optical properties of GaN grown by metalorganic vapor phase epitaxy

    S. F. Chichibu;A. Setoguchi;A. Setoguchi;A. Uedono;K. Yoshimura

  • Transition and relaxation processes of polyethylene, polypropylene, and polystyrene studied by positron annihilation

    A. Uedono;T. Kawano;S. Tanigawa;M. Ban

  • Recent advances and challenges for successful p-type control of InN films with Mg acceptor doping by molecular beam epitaxy

    Akihiko Yoshikawa;Xinqiang Wang;Yoshihiro Ishitani;Akira Uedono

  • Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN Studied Using Monoenergetic Positron Beams

    Akira Uedono;Shinya Takashima;Masaharu Edo;Katsunori Ueno

Frequent Co-Authors

Shigefusa F. Chichibu
Shigefusa F. Chichibu Tohoku University
Kenji Shiraishi
Kenji Shiraishi Nagoya University
Toyohiro Chikyow
Toyohiro Chikyow National Institute for Materials Science
Seiichi Miyazaki
Seiichi Miyazaki Hiroshima University
Naoto Umezawa
Naoto Umezawa Samsung (South Korea)
Takeshi Ohshima
Takeshi Ohshima Japan Atomic Energy Agency
Shuji Nakamura
Shuji Nakamura University of California, Santa Barbara
Tomas Palacios
Tomas Palacios MIT
Kenji Fujito
Kenji Fujito Mitsubishi Chemical Corporation
Sadafumi Yoshida
Sadafumi Yoshida National Institute of Advanced Industrial Science and Technology

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Best Scientists Citing Akira Uedono

Shigefusa F. Chichibu

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Tohoku University

Publications: 87

Shuji Nakamura

Shuji Nakamura

University of California, Santa Barbara

Publications: 33

Steven P. DenBaars

Steven P. DenBaars

University of California, Santa Barbara

Publications: 32

Yoshitaka Okada

Yoshitaka Okada

University of Tokyo

Publications: 31

Ramon Collazo

Ramon Collazo

North Carolina State University

Publications: 27

Xinqiang Wang

Xinqiang Wang

Peking University

Publications: 27

James S. Speck

James S. Speck

University of California, Santa Barbara

Publications: 26

Zlatko Sitar

Zlatko Sitar

North Carolina State University

Publications: 26

Rong Zhang

Rong Zhang

Nanjing University

Publications: 25

Nicolas Grandjean

Nicolas Grandjean

École Polytechnique Fédérale de Lausanne

Publications: 25

Michal Bockowski

Michal Bockowski

Polish Academy of Sciences

Publications: 25

isamu akasaki

isamu akasaki

Meijo University

Publications: 24

Menno J. Kappers

Menno J. Kappers

University of Cambridge

Publications: 20

Xingzhong Cao

Xingzhong Cao

Chinese Academy of Sciences

Publications: 20

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Colin J. Humphreys

Queen Mary University of London

Publications: 20

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Rachel A. Oliver

University of Cambridge

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