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Materials Science

D-Index
44
Citations
9210
World Ranking
11953
National Ranking
747

Overview

Akira Uedono is affiliated with the University of Tsukuba in Japan and has contributed extensively to research in engineering, materials science, and physics and astronomy. Their publication record includes over one hundred works predominantly focusing on electrical and electronic engineering, mechanics of materials, condensed matter physics, materials chemistry, and electronic, optical, and magnetic materials.

Their research topics center largely on semiconductor materials and devices, with a particular emphasis on GaN-based semiconductor devices and materials. Other significant subjects of study include muon and positron interactions and applications, Ga2O3 and related materials, metal and thin film mechanics, ZnO doping and properties, and copper interconnects and reliability.

Uedono has frequently published in venues such as the Journal of Applied Physics, Japanese Journal of Applied Physics, Applied Physics Letters, physica status solidi (b), and ACS Applied Polymer Materials.

Frequent collaborators of Uedono include Shoji Ishibashi, Shigefusa F. Chichibu, Kohei Shima, Fumihiro Inoue, and Michał Boćkowski.

Selected recent papers authored or coauthored by Uedono include:

  • "Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam," 2020, Scientific Reports
  • "Annealing behaviors of vacancy-type defects in AlN deposited by radio-frequency sputtering and metalorganic vapor phase epitaxy studied using monoenergetic positron beams," 2020, Journal of Applied Physics
  • "Origin of Voids at the SiO2/SiO2 and SiCN/SiCN Bonding Interface Using Positron Annihilation Spectroscopy and Electron Spin Resonance," 2023, ECS Journal of Solid State Science and Technology

  • "Effect of free-volume holes on static mechanical properties of epoxy resins studied by positron annihilation and PVT experiments," 2020, Polymer
  • "Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg," 2021, Applied Physics Letters

Their work often examines vacancy-type defects and the effects of advanced annealing techniques on semiconductor materials, employing methods such as monoenergetic positron beams and positron annihilation spectroscopy. This positions them well within the subfields involving material defect analysis and semiconductor device optimization.

Best Publications

  • Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.

    Shigefusa F. Chichibu;Akira Uedono;Akira Uedono;Takeyoshi Onuma;Benjamin A. Haskell

  • Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnO

    T. Koida;S. F. Chichibu;A. Uedono;A. Tsukazaki

  • Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques

    S. F. Chichibu;A. Uedono;A. Uedono;T. Onuma;T. Sota

  • Defects in ZnO thin films grown on ScAlMgO4 substrates probed by a monoenergetic positron beam

    A. Uedono;T. Koida;A. Tsukazaki;M. Kawasaki

  • The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN

    S. F. Chichibu;S. F. Chichibu;A. Uedono;K. Kojima;H. Ikeda

  • Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0.6Ga0.4N films grown on AlN templates by metalorganic vapor phase epitaxy

    S. F. Chichibu;H. Miyake;Y. Ishikawa;M. Tashiro

  • Improvements in quantum efficiency of excitonic emissions in ZnO epilayers by the elimination of point defects

    S. F. Chichibu;T. Onuma;M. Kubota;A. Uedono;A. Uedono

  • Radiative and nonradiative processes in strain-free AlxGa1−xN films studied by time-resolved photoluminescence and positron annihilation techniques

    Takeyoshi Onuma;Shigefusa F. Chichibu;Akira Uedono;Takayuki Sota

  • Study of defects in GaN grown by the two-flow metalorganic chemical vapor deposition technique using monoenergetic positron beams

    A. Uedono;S. F. Chichibu;Z. Q. Chen;M. Sumiya

  • Study of oxygen vacancies in SrTiO3 by positron annihilation

    Akira Uedono;Kazuo Shimayama;Masahiro Kiyohara;Zhi Quan Chen

  • Effect of La doping on the lattice defects and photoluminescence properties of CuO

    L. Vimala Devi;T. Selvalakshmi;S. Sellaiyan;A. Uedono

  • Relation between Al vacancies and deep emission bands in AlN epitaxial films grown by NH3-source molecular beam epitaxy

    T. Koyama;M. Sugawara;T. Hoshi;A. Uedono

  • Time-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by hydride vapor phase epitaxy

    S. F. Chichibu;K. Hazu;Y. Ishikawa;M. Tashiro

  • Exciton-polariton spectra and limiting factors for the room-temperature photoluminescence efficiency in ZnO

    S F Chichibu;A Uedono;A Tsukazaki;T Onuma

  • Generation of thermal muonium in vacuum

    A. P. Mills;J. Imazato;S. Saitoh;A. Uedono

  • Nitrogen vacancies as a common element of the green luminescence and nonradiative recombination centers in Mg-implanted GaN layers formed on a GaN substrate

    Kazunobu Kojima;Shinya Takashima;Masaharu Edo;Katsunori Ueno

  • Synthesis, defect characterization and photocatalytic degradation efficiency of Tb doped CuO nanoparticles

    L. Vimala Devi;S. Sellaiyan;T. Selvalakshmi;H.J. Zhang

  • Vacancy-type defects and their annealing behaviors in Mg-implanted GaN studied by a monoenergetic positron beam

    Akira Uedono;Shinya Takashima;Masaharu Edo;Katsunori Ueno

  • Impact of growth polar direction on the optical properties of GaN grown by metalorganic vapor phase epitaxy

    S. F. Chichibu;A. Setoguchi;A. Setoguchi;A. Uedono;K. Yoshimura

  • Transition and relaxation processes of polyethylene, polypropylene, and polystyrene studied by positron annihilation

    A. Uedono;T. Kawano;S. Tanigawa;M. Ban

  • Recent advances and challenges for successful p-type control of InN films with Mg acceptor doping by molecular beam epitaxy

    Akihiko Yoshikawa;Xinqiang Wang;Yoshihiro Ishitani;Akira Uedono

  • Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN Studied Using Monoenergetic Positron Beams

    Akira Uedono;Shinya Takashima;Masaharu Edo;Katsunori Ueno

Frequent Co-Authors

Shigefusa F. Chichibu
Shigefusa F. Chichibu Tohoku University
Kenji Shiraishi
Kenji Shiraishi Nagoya University
Toyohiro Chikyow
Toyohiro Chikyow National Institute for Materials Science
Seiichi Miyazaki
Seiichi Miyazaki Hiroshima University
Naoto Umezawa
Naoto Umezawa Samsung (South Korea)
Takeshi Ohshima
Takeshi Ohshima Japan Atomic Energy Agency
Shuji Nakamura
Shuji Nakamura University of California, Santa Barbara
Kenji Fujito
Kenji Fujito Mitsubishi Chemical Corporation
Sadafumi Yoshida
Sadafumi Yoshida National Institute of Advanced Industrial Science and Technology

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