The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Akira Uedono sits on this spectrum.
This scientist: 550 publications — 90th percentile
90% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,163 publications or more.
The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Akira Uedono sits on this spectrum.
This scientist: 44 D-Index — 7th percentile
7% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 165 D-Index or more.
Akira Uedono is affiliated with the University of Tsukuba in Japan and has contributed extensively to research in engineering, materials science, and physics and astronomy. Their publication record includes over one hundred works predominantly focusing on electrical and electronic engineering, mechanics of materials, condensed matter physics, materials chemistry, and electronic, optical, and magnetic materials.
Their research topics center largely on semiconductor materials and devices, with a particular emphasis on GaN-based semiconductor devices and materials. Other significant subjects of study include muon and positron interactions and applications, Ga2O3 and related materials, metal and thin film mechanics, ZnO doping and properties, and copper interconnects and reliability.
Uedono has frequently published in venues such as the Journal of Applied Physics, Japanese Journal of Applied Physics, Applied Physics Letters, physica status solidi (b), and ACS Applied Polymer Materials.
Frequent collaborators of Uedono include Shoji Ishibashi, Shigefusa F. Chichibu, Kohei Shima, Fumihiro Inoue, and Michał Boćkowski.
Selected recent papers authored or coauthored by Uedono include:
Their work often examines vacancy-type defects and the effects of advanced annealing techniques on semiconductor materials, employing methods such as monoenergetic positron beams and positron annihilation spectroscopy. This positions them well within the subfields involving material defect analysis and semiconductor device optimization.
Shigefusa F. Chichibu;Akira Uedono;Akira Uedono;Takeyoshi Onuma;Benjamin A. Haskell
T. Koida;S. F. Chichibu;A. Uedono;A. Tsukazaki
S. F. Chichibu;A. Uedono;A. Uedono;T. Onuma;T. Sota
A. Uedono;T. Koida;A. Tsukazaki;M. Kawasaki
S. F. Chichibu;S. F. Chichibu;A. Uedono;K. Kojima;H. Ikeda
S. F. Chichibu;H. Miyake;Y. Ishikawa;M. Tashiro
S. F. Chichibu;T. Onuma;M. Kubota;A. Uedono;A. Uedono
Takeyoshi Onuma;Shigefusa F. Chichibu;Akira Uedono;Takayuki Sota
A. Uedono;S. F. Chichibu;Z. Q. Chen;M. Sumiya
Akira Uedono;Kazuo Shimayama;Masahiro Kiyohara;Zhi Quan Chen
L. Vimala Devi;T. Selvalakshmi;S. Sellaiyan;A. Uedono
T. Koyama;M. Sugawara;T. Hoshi;A. Uedono
S. F. Chichibu;K. Hazu;Y. Ishikawa;M. Tashiro
S F Chichibu;A Uedono;A Tsukazaki;T Onuma
A. P. Mills;J. Imazato;S. Saitoh;A. Uedono
Kazunobu Kojima;Shinya Takashima;Masaharu Edo;Katsunori Ueno
L. Vimala Devi;S. Sellaiyan;T. Selvalakshmi;H.J. Zhang
Akira Uedono;Shinya Takashima;Masaharu Edo;Katsunori Ueno
S. F. Chichibu;A. Setoguchi;A. Setoguchi;A. Uedono;K. Yoshimura
A. Uedono;T. Kawano;S. Tanigawa;M. Ban
Akihiko Yoshikawa;Xinqiang Wang;Yoshihiro Ishitani;Akira Uedono
Akira Uedono;Shinya Takashima;Masaharu Edo;Katsunori Ueno
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