H-Index & Metrics Top Publications

H-Index & Metrics

Discipline name H-index Citations Publications World Ranking National Ranking
Materials Science H-index 50 Citations 7,704 107 World Ranking 5832 National Ranking 359

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Laser
  • Optics

Kenji Fujito mostly deals with Optoelectronics, Diode, Light-emitting diode, Chemical vapor deposition and Metalorganic vapour phase epitaxy. The Optoelectronics study combines topics in areas such as Quantum well, Gallium nitride and Electroluminescence. In his work, Epitaxy, Energy materials and Crystal is strongly intertwined with Crystal growth, which is a subfield of Gallium nitride.

His Diode study incorporates themes from Laser and Optics. Kenji Fujito works mostly in the field of Light-emitting diode, limiting it down to topics relating to Quantum efficiency and, in certain cases, Substrate. As part of one scientific family, he deals mainly with the area of Metalorganic vapour phase epitaxy, narrowing it down to issues related to the Nitride, and often Analytical chemistry and Mineralogy.

His most cited work include:

  • Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes (272 citations)
  • Bulk GaN crystals grown by HVPE (255 citations)
  • Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates (249 citations)

What are the main themes of his work throughout his whole career to date?

His scientific interests lie mostly in Optoelectronics, Diode, Optics, Light-emitting diode and Wide-bandgap semiconductor. His work deals with themes such as Quantum well, Laser and Substrate, which intersect with Optoelectronics. His Diode research is multidisciplinary, incorporating elements of Multiple quantum and Full width at half maximum.

His work on Blue laser as part of general Optics research is frequently linked to Cladding, thereby connecting diverse disciplines of science. The various areas that Kenji Fujito examines in his Light-emitting diode study include Metalorganic vapour phase epitaxy, Chemical vapor deposition, Electroluminescence and Optical polarization. Transmission electron microscopy, Crystallite and Sapphire is closely connected to Dislocation in his research, which is encompassed under the umbrella topic of Wide-bandgap semiconductor.

He most often published in these fields:

  • Optoelectronics (65.69%)
  • Diode (28.47%)
  • Optics (27.01%)

What were the highlights of his more recent work (between 2012-2018)?

  • Optoelectronics (65.69%)
  • Wide-bandgap semiconductor (20.44%)
  • Crystal (16.79%)

In recent papers he was focusing on the following fields of study:

Kenji Fujito spends much of his time researching Optoelectronics, Wide-bandgap semiconductor, Crystal, Epitaxy and Optics. His study ties his expertise on Quantum well together with the subject of Optoelectronics. As part of the same scientific family, Kenji Fujito usually focuses on Wide-bandgap semiconductor, concentrating on Metalorganic vapour phase epitaxy and intersecting with Double heterostructure, Active layer, Neutron diffraction and Luminescence.

His Epitaxy research incorporates elements of Band gap and Analytical chemistry. Within one scientific family, Kenji Fujito focuses on topics pertaining to Hillock under Optics, and may sometimes address concerns connected to Junction diodes, Junction depth, Crystal plane and Visible spectrum. His studies in Diode integrate themes in fields like Laser, Lasing threshold and Superlattice.

Between 2012 and 2018, his most popular works were:

  • Green Semipolar (202̄1̄) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth (54 citations)
  • The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN (44 citations)
  • High-power low-droop violet semipolar (303¯1¯) InGaN/GaN light-emitting diodes with thick active layer design (42 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Optics
  • Laser

Kenji Fujito focuses on Optoelectronics, Quantum well, Light-emitting diode, Wide-bandgap semiconductor and Diode. His Optoelectronics study combines topics in areas such as Optics and Dislocation. His Optics research includes themes of Indium tin oxide and Electroluminescence.

His Quantum well research is multidisciplinary, relying on both Wavelength and Laser linewidth. His research integrates issues of Crystallographic defect, Molecular physics, Band gap and Carrier lifetime in his study of Wide-bandgap semiconductor. His work deals with themes such as Blueshift, Screening effect, Full width at half maximum and Electronic band structure, which intersect with Diode.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Top Publications

Bulk GaN crystals grown by HVPE

Kenji Fujito;Shuichi Kubo;Hirobumi Nagaoka;Tae Mochizuki.
Journal of Crystal Growth (2009)

387 Citations

Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates

Hitoshi Sato;Roy B. Chung;Hirohiko Hirasawa;Natalie Fellows.
Applied Physics Letters (2008)

359 Citations

Defect reduction in (112̄0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy

B. A. Haskell;F. Wu;M. D. Craven;S. Matsuda.
Applied Physics Letters (2003)

345 Citations

High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolar $m$-plane Bulk GaN Substrate

Kenji Iso;Hisashi Yamada;Hirohiko Hirasawa;Natalie Fellows.
Japanese Journal of Applied Physics (2007)

287 Citations

Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes

Mathew C. Schmidt;Kwang-Choong Kim;Robert M. Farrell;Daniel F. Feezell.
Japanese Journal of Applied Physics (2007)

272 Citations

High power and high efficiency green light emitting diode on free-standing semipolar (112) bulk GaN substrate

Hitoshi Sato;Anurag Tyagi;Hong Zhong;Natalie Fellows.
Physica Status Solidi-rapid Research Letters (2007)

267 Citations

High power and high efficiency blue light emitting diode on freestanding semipolar (101¯1¯) bulk GaN substrate

Hong Zhong;Anurag Tyagi;Natalie N. Fellows;Feng Wu.
Applied Physics Letters (2007)

248 Citations

High‐quality nonpolar m ‐plane GaN substrates grown by HVPE

Kenji Fujito;Kazumasa Kiyomi;Tae Mochizuki;Hirotaka Oota.
Physica Status Solidi (a) (2008)

236 Citations

High-Power Blue-Violet Semipolar (2021) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm2

Yuji Zhao;Shinichi Tanaka;Chih Chien Pan;Kenji Fujito.
Applied Physics Express (2011)

226 Citations

Improved electroluminescence on nonpolar m -plane InGaN/GaN quantum wells LEDs

Kwang-Choong Kim;Mathew C. Schmidt;Hitoshi Sato;Feng Wu.
Physica Status Solidi-rapid Research Letters (2007)

208 Citations

Profile was last updated on December 6th, 2021.
Research.com Ranking is based on data retrieved from the Microsoft Academic Graph (MAG).
The ranking h-index is inferred from publications deemed to belong to the considered discipline.

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