Kenji Fujito mostly deals with Optoelectronics, Diode, Light-emitting diode, Chemical vapor deposition and Metalorganic vapour phase epitaxy. The Optoelectronics study combines topics in areas such as Quantum well, Gallium nitride and Electroluminescence. In his work, Epitaxy, Energy materials and Crystal is strongly intertwined with Crystal growth, which is a subfield of Gallium nitride.
His Diode study incorporates themes from Laser and Optics. Kenji Fujito works mostly in the field of Light-emitting diode, limiting it down to topics relating to Quantum efficiency and, in certain cases, Substrate. As part of one scientific family, he deals mainly with the area of Metalorganic vapour phase epitaxy, narrowing it down to issues related to the Nitride, and often Analytical chemistry and Mineralogy.
His scientific interests lie mostly in Optoelectronics, Diode, Optics, Light-emitting diode and Wide-bandgap semiconductor. His work deals with themes such as Quantum well, Laser and Substrate, which intersect with Optoelectronics. His Diode research is multidisciplinary, incorporating elements of Multiple quantum and Full width at half maximum.
His work on Blue laser as part of general Optics research is frequently linked to Cladding, thereby connecting diverse disciplines of science. The various areas that Kenji Fujito examines in his Light-emitting diode study include Metalorganic vapour phase epitaxy, Chemical vapor deposition, Electroluminescence and Optical polarization. Transmission electron microscopy, Crystallite and Sapphire is closely connected to Dislocation in his research, which is encompassed under the umbrella topic of Wide-bandgap semiconductor.
Kenji Fujito spends much of his time researching Optoelectronics, Wide-bandgap semiconductor, Crystal, Epitaxy and Optics. His study ties his expertise on Quantum well together with the subject of Optoelectronics. As part of the same scientific family, Kenji Fujito usually focuses on Wide-bandgap semiconductor, concentrating on Metalorganic vapour phase epitaxy and intersecting with Double heterostructure, Active layer, Neutron diffraction and Luminescence.
His Epitaxy research incorporates elements of Band gap and Analytical chemistry. Within one scientific family, Kenji Fujito focuses on topics pertaining to Hillock under Optics, and may sometimes address concerns connected to Junction diodes, Junction depth, Crystal plane and Visible spectrum. His studies in Diode integrate themes in fields like Laser, Lasing threshold and Superlattice.
Kenji Fujito focuses on Optoelectronics, Quantum well, Light-emitting diode, Wide-bandgap semiconductor and Diode. His Optoelectronics study combines topics in areas such as Optics and Dislocation. His Optics research includes themes of Indium tin oxide and Electroluminescence.
His Quantum well research is multidisciplinary, relying on both Wavelength and Laser linewidth. His research integrates issues of Crystallographic defect, Molecular physics, Band gap and Carrier lifetime in his study of Wide-bandgap semiconductor. His work deals with themes such as Blueshift, Screening effect, Full width at half maximum and Electronic band structure, which intersect with Diode.
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Bulk GaN crystals grown by HVPE
Kenji Fujito;Shuichi Kubo;Hirobumi Nagaoka;Tae Mochizuki.
Journal of Crystal Growth (2009)
Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates
Hitoshi Sato;Roy B. Chung;Hirohiko Hirasawa;Natalie Fellows.
Applied Physics Letters (2008)
Defect reduction in (112̄0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy
B. A. Haskell;F. Wu;M. D. Craven;S. Matsuda.
Applied Physics Letters (2003)
High power and high efficiency green light emitting diode on free-standing semipolar (112) bulk GaN substrate
Hitoshi Sato;Anurag Tyagi;Hong Zhong;Natalie Fellows.
Physica Status Solidi-rapid Research Letters (2007)
Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes
Mathew C. Schmidt;Kwang-Choong Kim;Robert M. Farrell;Daniel F. Feezell.
Japanese Journal of Applied Physics (2007)
High power and high efficiency blue light emitting diode on freestanding semipolar (101¯1¯) bulk GaN substrate
Hong Zhong;Anurag Tyagi;Natalie N. Fellows;Feng Wu.
Applied Physics Letters (2007)
High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolar $m$-plane Bulk GaN Substrate
Kenji Iso;Hisashi Yamada;Hirohiko Hirasawa;Natalie Fellows.
Japanese Journal of Applied Physics (2007)
High-Power Blue-Violet Semipolar (2021) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm2
Yuji Zhao;Shinichi Tanaka;Chih Chien Pan;Kenji Fujito.
Applied Physics Express (2011)
High-quality nonpolar m -plane GaN substrates grown by HVPE
Kenji Fujito;Kazumasa Kiyomi;Tae Mochizuki;Hirotaka Oota.
Physica Status Solidi (a) (2008)
Improved electroluminescence on nonpolar m -plane InGaN/GaN quantum wells LEDs
Kwang-Choong Kim;Mathew C. Schmidt;Hitoshi Sato;Feng Wu.
Physica Status Solidi-rapid Research Letters (2007)
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