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Materials Science

D-Index
51
Citations
8670
World Ranking
9975
National Ranking
603

Overview

Kenji Fujito is affiliated with Mitsubishi Chemical Corporation in Japan. Their research primarily spans the fields of Physics and Astronomy as well as Engineering. Within these fields, Fujito's work focuses on specific subfields including Condensed Matter Physics, Atomic and Molecular Physics and Optics, and Electrical and Electronic Engineering.

Their main research topics include:

  • GaN-based semiconductor devices and materials
  • Semiconductor Quantum Structures and Devices
  • Semiconductor materials and devices

Fujito has collaborated frequently with coauthors such as Yutaka Mikawa and Satoru Izumisawa.

Best Publications

  • Bulk GaN crystals grown by HVPE

    Kenji Fujito;Shuichi Kubo;Hirobumi Nagaoka;Tae Mochizuki

  • Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates

    Hitoshi Sato;Roy B. Chung;Hirohiko Hirasawa;Natalie Fellows

  • Defect reduction in (112̄0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy

    B. A. Haskell;F. Wu;M. D. Craven;S. Matsuda

  • Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes

    Mathew C. Schmidt;Kwang-Choong Kim;Robert M. Farrell;Daniel F. Feezell

  • High power and high efficiency green light emitting diode on free-standing semipolar (112) bulk GaN substrate

    Hitoshi Sato;Anurag Tyagi;Hong Zhong;Natalie Fellows

  • High power and high efficiency blue light emitting diode on freestanding semipolar (101¯1¯) bulk GaN substrate

    Hong Zhong;Anurag Tyagi;Natalie N. Fellows;Feng Wu

  • High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolar $m$-plane Bulk GaN Substrate

    Kenji Iso;Hisashi Yamada;Hirohiko Hirasawa;Natalie Fellows

  • High-Power Blue-Violet Semipolar (2021) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm2

    Yuji Zhao;Shinichi Tanaka;Chih Chien Pan;Kenji Fujito

  • High-quality nonpolar m -plane GaN substrates grown by HVPE

    Kenji Fujito;Kazumasa Kiyomi;Tae Mochizuki;Hirotaka Oota

  • Improved electroluminescence on nonpolar m -plane InGaN/GaN quantum wells LEDs

    Kwang-Choong Kim;Mathew C. Schmidt;Hitoshi Sato;Feng Wu

  • Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells

    Yuji Zhao;Qimin Yan;Chia Yen Huang;Shih Chieh Huang

  • High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (2021) GaN Substrates

    Shuichiro Yamamoto;Shuichiro Yamamoto;Yuji Zhao;Chih Chien Pan;Roy B. Chung

  • Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112¯2) GaN free standing substrates

    Anurag Tyagi;Feng Wu;Erin C. Young;Arpan Chakraborty

  • Semipolar (10ar{1}ar{1}) InGaN/GaN Laser Diodes on Bulk GaN Substrates

    Anurag Tyagi;Hong Zhong;Roy B. Chung;Daniel F. Feezell

  • Demonstration of high power blue-green light emitting diode on semipolar (1122) bulk GaN substrate

    H. Zhong;A. Tyagi;N.N. Fellows;R.B. Chung

  • High Thermal Conductivity of Gallium Nitride (GaN) Crystals Grown by HVPE Process

    Hiroyuki Shibata;Yoshio Waseda;Hiromichi Ohta;Kazumasa Kiyomi

  • Development of Bulk GaN Crystals and Nonpolar/Semipolar Substrates by HVPE

    Kenji Fujito;Shuichi Kubo;Isao Fujimura

  • Roughening Hexagonal Surface Morphology on Laser Lift-Off (LLO) N-Face GaN with Simple Photo-Enhanced Chemical Wet Etching

    Yan Gao;Tetsuo Fujii;Rajat Sharma;Kenji Fujito

  • The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN

    S. F. Chichibu;S. F. Chichibu;A. Uedono;K. Kojima;H. Ikeda

  • Formation and reduction of pyramidal hillocks on m-plane {11¯00} GaN

    A. Hirai;Z. Jia;M. C. Schmidt;R. M. Farrell

  • Investigation of precipitate formation on laser-ablated YBa2Cu3O7- delta thin films.

    JP Gong;M Kawasaki;M Kawasaki;K Fujito;R Tsuchiya

Frequent Co-Authors

Shuji Nakamura
Shuji Nakamura University of California, Santa Barbara
James S. Speck
James S. Speck University of California, Santa Barbara
Steven P. DenBaars
Steven P. DenBaars University of California, Santa Barbara
Shigefusa F. Chichibu
Shigefusa F. Chichibu Tohoku University
Feng Wu
Feng Wu Huazhong University of Science and Technology
Daniel F. Feezell
Daniel F. Feezell University of New Mexico
Hideomi Koinuma
Hideomi Koinuma Tokyo Institute of Technology
Arpan Chakraborty
Arpan Chakraborty Apple (United States)
Akira Uedono
Akira Uedono University of Tsukuba
Chris G. Van de Walle
Chris G. Van de Walle University of California, Santa Barbara

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