Kenji Fujito

Overview

Best Publications

• Bulk GaN crystals grown by HVPE

  Kenji Fujito;Shuichi Kubo;Hirobumi Nagaoka;Tae Mochizuki

  472
  Citations

• Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates

  Hitoshi Sato;Roy B. Chung;Hirohiko Hirasawa;Natalie Fellows

  398
  Citations

• Defect reduction in (112̄0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy

  B. A. Haskell;F. Wu;M. D. Craven;S. Matsuda

  356
  Citations

• Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes

  Mathew C. Schmidt;Kwang-Choong Kim;Robert M. Farrell;Daniel F. Feezell

  289
  Citations

• High power and high efficiency green light emitting diode on free-standing semipolar (112) bulk GaN substrate

  Hitoshi Sato;Anurag Tyagi;Hong Zhong;Natalie Fellows

  284
  Citations

• High power and high efficiency blue light emitting diode on freestanding semipolar (101¯1¯) bulk GaN substrate

  Hong Zhong;Anurag Tyagi;Natalie N. Fellows;Feng Wu

  256
  Citations

• High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolar $m$-plane Bulk GaN Substrate

  Kenji Iso;Hisashi Yamada;Hirohiko Hirasawa;Natalie Fellows

  246
  Citations

• High-Power Blue-Violet Semipolar (2021) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm2

  Yuji Zhao;Shinichi Tanaka;Chih Chien Pan;Kenji Fujito

  243
  Citations

• High-quality nonpolar m -plane GaN substrates grown by HVPE

  Kenji Fujito;Kazumasa Kiyomi;Tae Mochizuki;Hirotaka Oota

  239
  Citations

• Improved electroluminescence on nonpolar m -plane InGaN/GaN quantum wells LEDs

  Kwang-Choong Kim;Mathew C. Schmidt;Hitoshi Sato;Feng Wu

  223
  Citations

• Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells

  Yuji Zhao;Qimin Yan;Chia Yen Huang;Shih Chieh Huang

  222
  Citations

• High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (2021) GaN Substrates

  Shuichiro Yamamoto;Shuichiro Yamamoto;Yuji Zhao;Chih Chien Pan;Roy B. Chung

  209
  Citations

• Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112¯2) GaN free standing substrates

  Anurag Tyagi;Feng Wu;Erin C. Young;Arpan Chakraborty

  203
  Citations

• Semipolar (10ar{1}ar{1}) InGaN/GaN Laser Diodes on Bulk GaN Substrates

  Anurag Tyagi;Hong Zhong;Roy B. Chung;Daniel F. Feezell

  199
  Citations

• Demonstration of high power blue-green light emitting diode on semipolar (1122) bulk GaN substrate

  H. Zhong;A. Tyagi;N.N. Fellows;R.B. Chung

  197
  Citations

• High Thermal Conductivity of Gallium Nitride (GaN) Crystals Grown by HVPE Process

  Hiroyuki Shibata;Yoshio Waseda;Hiromichi Ohta;Kazumasa Kiyomi

  185
  Citations

• Development of Bulk GaN Crystals and Nonpolar/Semipolar Substrates by HVPE

  Kenji Fujito;Shuichi Kubo;Isao Fujimura

  149
  Citations

• Roughening Hexagonal Surface Morphology on Laser Lift-Off (LLO) N-Face GaN with Simple Photo-Enhanced Chemical Wet Etching

  Yan Gao;Tetsuo Fujii;Rajat Sharma;Kenji Fujito

  148
  Citations

• The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN

  S. F. Chichibu;S. F. Chichibu;A. Uedono;K. Kojima;H. Ikeda

  143
  Citations

• Formation and reduction of pyramidal hillocks on m-plane {11¯00} GaN

  A. Hirai;Z. Jia;M. C. Schmidt;R. M. Farrell

  132
  Citations

• Investigation of precipitate formation on laser-ablated YBa2Cu3O7- delta thin films.

  JP Gong;M Kawasaki;M Kawasaki;K Fujito;R Tsuchiya

  131
  Citations