World's Best Scientists 2026 revealed!
Masashi Yoshimura

Masashi Yoshimura

D-Index & Metrics

Materials Science

D-Index
54
Citations
10149
World Ranking
8929
National Ranking
519

Chemistry

D-Index
52
Citations
9144
World Ranking
13565
National Ranking
1041

Masashi Yoshimura publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Masashi Yoshimura sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 583 publications — 91st percentile

91% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Masashi Yoshimura D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Masashi Yoshimura sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 54 D-Index — 32nd percentile

32% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Masashi Yoshimura is affiliated with Osaka University in Japan, where they contribute extensively to research in materials science, physics and astronomy, and engineering. Their work primarily focuses on semiconductor materials and devices, with a particular emphasis on GaN-based semiconductor devices and materials as well as Ga2O3 and related materials.

Their research spans several specialized subfields, including materials chemistry, electrical and electronic engineering, condensed matter physics, electronic, optical and magnetic materials, and atomic and molecular physics and optics. Yoshimura's investigation topics also include ZnO doping and properties, kidney stones and urolithiasis treatments, crystallization and solubility studies, solid state laser technologies, and semiconductor materials and devices.

Frequent coauthors who collaborate with Yoshimura include Yusuke Mori, Masayuki Imanishi, Mihoko Maruyama, Shigeyoshi Usami, and Hiroshi Yoshikawa, reflecting ongoing research partnerships within these areas.

Key publication venues showcasing Yoshimura's work include the Journal of Crystal Growth and the Japanese Journal of Applied Physics, each featuring twelve papers. Additional venues where multiple papers have appeared are Applied Physics Express with six papers, The Journal of Urology with five, and Optics Express with four.

The following recent papers by Yoshimura illustrate the range and focus of their research:

  • Terahertz time-domain ellipsometry with high precision for the evaluation of GaN crystals with carrier densities up to 1020 cm−3, 2021, Scientific Reports
  • Anisotropic complex refractive index of β-Ga2O3 bulk and epilayer evaluated by terahertz time-domain spectroscopy, 2021, Applied Physics Letters
  • High-power DUV picosecond pulse laser with a gain-switched-LD-seeded MOPA and large CLBO crystal, 2020, Optics Letters
  • High-power deep-ultraviolet light generation at 266 nm from frequency quadrupling of a picosecond pulsed 1064 nm laser with a Nd:YVO4 amplifier pumped by a 914 nm laser diode, 2023, Optics Express
  • Multicolor imaging of calcium-binding proteins in human kidney stones for elucidating the effects of proteins on crystal growth, 2021, Scientific Reports

Best Publications

  • Recent development of nonlinear optical borate crystals: key materials for generation of visible and UV light

    Takatomo Sasaki;Yusuke Mori;Masashi Yoshimura;Yoke Khin Yap

  • Nonlinear optical borate crystals : principles and applications

    Chuangtian Chen;Takatomo Sasaki;Rukang Li;Yincheng Wu

  • Gelation behaviour of konjac glucomannan with different molecular weights

    H. Zhang;M. Yoshimura;K. Nishinari;M. A. K. Williams

  • A New Nonlinear Optical Borate Crystal K2Al2B2O7 (KAB)

    Zhang–Gui Hu;Tetsuji Higashiyama;Masashi Yoshimura;Yoke Khin Yap

  • Laser irradiated growth of protein crystal

    Hiroaki Adachi;Kazufumi Takano;Youichiroh Hosokawa;Tsuyoshi Inoue

  • Effect of carbon additive on increases in the growth rate of 2 in GaN single crystals in the Na flux method

    Fumio Kawamura;Masanori Morishita;Masaki Tanpo;Mamoru Imade

  • The control of BN and BC bonds in BCN films synthesized using pulsed laser deposition

    Y Wada;Y.K Yap;M Yoshimura;Y Mori

  • Growth of a Large GaN Single Crystal Using the Liquid Phase Epitaxy (LPE) Technique

    Fumio Kawamura;Tomoya Iwahashi;Kunimichi Omae;Masanori Morishita

  • High-Quality Organic 4-Dimethylamino-N-methyl-4-stilbazolium Tosylate (DAST) Crystals for THz Wave Generation

    Hiroaki Adachi;Tetsuo Taniuchi;Masashi Yoshimura;Srinivasan Brahadeeswaran

  • A New Nonlinear Optical Crystal-BaAlBO3F2(BABF)

    Zhang-Gui Hu;Masashi Yoshimura;Kenichi Muramatsu;Kenichi Muramatsu;Yusuke Mori

  • High-temperature thermoelectric properties of single-crystal Ca3Co2O6

    M. Mikami;R. Funahashi;M. Yoshimura;Y. Mori

  • Promoted nitrogen dissolution due to the addition of Li or Ca to Ga-Na melt; some effects of additives on the growth of GaN single crystals using the sodium flux method

    Masanori Morishita;Fumio Kawamura;Minoru Kawahara;Masashi Yoshimura

  • Progress in the growth of a CsLiB6O10 crystal and its application to ultraviolet light generation

    Takatomo Sasaki;Yusuke Mori;Masashi Yoshimura

  • Recent development of nonlinear optical borate crystals for UV generation

    Y Mori;Y.K Yap;T Kamimura;M Yoshimura

  • Growth of bulk GaN crystal by Na flux method under various conditions

    Y. Mori;M. Imade;K. Murakami;H. Takazawa

  • Dependences of Laser-Induced Bulk Damage Threshold and Crack Patterns in Several Nonlinear Crystals on Irradiation Direction

    Hidetsugu Yoshida;Hisanori Fujita;Masahiro Nakatsuka;Masashi Yoshimura

  • Continuous-wave all-solid-state 244 nm deep-ultraviolet laser source by fourth-harmonic generation of an optically pumped semiconductor laser using CsLiB6O10 in an external resonator.

    Yushi Kaneda;J. M. Yarborough;Li Li;N. Peyghambarian

  • Growth of nitride crystals, BN, AlN and GaN by using a Na flux

    M Yano;M Okamoto;Y.K Yap;M Yoshimura

  • Noncritically phase-matched frequency conversion in Gd(x)Y(1-x)Ca(4)O(BO(3))(3) crystal.

    M Yoshimura;H Furuya;T Kobayashi;K Murase

  • Growth of a Two-Inch GaN Single Crystal Substrate Using the Na Flux Method

    Fumio Kawamura;Hidekazu Umeda;Masanori Morishita;Minoru Kawahara

  • Materials Research Innovations

    Tsuneo Nakahara;Naoji Fujomori;E.W. White;M. Yoshimura

Frequent Co-Authors

Yusuke Mori
Yusuke Mori Osaka University
Takatomo Sasaki
Takatomo Sasaki Osaka University
Yasuo Kitaoka
Yasuo Kitaoka Osaka University
Yoke Khin Yap
Yoke Khin Yap Michigan Technological University
Kazufumi Takano
Kazufumi Takano Kyoto Prefectural University
Tsuyoshi Inoue
Tsuyoshi Inoue Osaka University
Masayoshi Tonouchi
Masayoshi Tonouchi Osaka University
Hiroaki Adachi
Hiroaki Adachi University of East Anglia
Yoshitada Morikawa
Yoshitada Morikawa Osaka University
Masahiko Tani
Masahiko Tani University of Fukui

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