2026 Michal Bockowski: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	49	10456	10098	32	32	485	9979

Michal Bockowski publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Michal Bockowski sits on this spectrum.

50 publications 1,163+

This scientist: 485 publications — 85th percentile

85% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Michal Bockowski D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Michal Bockowski sits on this spectrum.

40 D-Index 165+

This scientist: 49 D-Index — 19th percentile

19% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Michal Bockowski is affiliated with the Polish Academy of Sciences in Poland. Their research spans multiple fields including engineering, materials science, and physics and astronomy, with a strong focus on semiconductor devices and materials.

Their work covers specialized subfields such as condensed matter physics, electrical and electronic engineering, materials chemistry, electronic, optical and magnetic materials, and mechanics of materials.

The main topics they research include:

GaN-based semiconductor devices and materials
Semiconductor materials and devices
Ga2O3 and related materials
Metal and thin film mechanics
ZnO doping and properties
Glass properties and applications
Silicon carbide semiconductor technologies

Michal Bockowski frequently publishes in several venues. The most notable among these are:

Journal of Applied Physics
Applied Physics Express
The Cambridge Structural Database
SSRN Electronic Journal
Journal of Crystal Growth

They collaborate regularly with a group of co-authors, including Kacper Sierakowski, Tomasz Sochacki, Małgorzata Iwińska, Tetsu Kachi, and Robert Kucharski.

Selected recent publications highlight their focus on semiconductor material growth, device formation, and mechanical properties. These include:

Growth of bulk GaN crystals (2020) published in Journal of Applied Physics
Progress on and challenges of p-type formation for GaN power devices (2020) published in Journal of Applied Physics
High Pressure Processing of Ion Implanted GaN (2020) published in Electronics
Bond Switching in Densified Oxide Glass Enables Record-High Fracture Toughness (2021) published in ACS Applied Materials & Interfaces
Recent progress in basic ammonothermal GaN crystal growth (2020) published in Journal of Crystal Growth

Best Publications

Lattice parameters of gallium nitride

M. Leszczynski;H. Teisseyre;T. Suski;I. Grzegory

567
Citations
Mechanism of yellow luminescence in GaN

T. Suski;P. Perlin;H. Teisseyre;M. Leszczyński

280
Citations
Thermal conductivity of GaN crystals in 4.2-300 K range

A. Jeżowski;B.A. Danilchenko;M. Boćkowski;I. Grzegory

231
Citations
III V Nitrides—thermodynamics and crystal growth at high N2 pressure

I. Grzegory;J. Jun;M. Boćkowski;St. Krukowski

200
Citations
Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing

Michal Bockowski;Michal Bockowski

185
Citations
Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substrates

K. Pakuła;A. Wysmołek;K.P. Korona;J.M. Baranowski;J.M. Baranowski

176
Citations
Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds

M Bockowski;M Iwinska;M Amilusik;M Fijalkowski

157
Citations
Thermal properties of indium nitride

S. Krukowski;A. Witek;J. Adamczyk;J. Jun

154
Citations
Discovery of Ultra-Crack-Resistant Oxide Glasses with Adaptive Networks

Kacper Januchta;Randall E. Youngman;Ashutosh Goel;Mathieu Bauchy

147
Citations
Technology of Gallium Nitride Crystal Growth

Dirk Ehrentraut;Elke Meissner;Michal Bockowski

145
Citations
Structure and mechanical properties of compressed sodium aluminosilicate glasses: Role of non-bridging oxygens

Tobias Kjær Bechgaard;Ashutosh Goel;Randall E. Youngman;John C. Mauro

140
Citations
Identification of the prime optical center in GaN:Eu3+

I. S Roqan;K. P O'Donnell;R. W Martin;P. R Edwards

135
Citations
Growth of bulk GaN crystals

R. Kucharski;T. Sochacki;B. Lucznik;M. Bockowski;M. Bockowski

125
Citations
Basic ammonothermal growth of Gallium Nitride – State of the art, challenges, perspectives

Unknown

123
Citations
Optical and magnetic properties of Mn in bulk GaN

A. Wolos;M. Palczewska;M. Zajac;J. Gosk;J. Gosk

119
Citations
Lattice constants, thermal expansion and compressibility of gallium nitride

M Leszczynski;T Suski;P Perlin;H Teisseyre

117
Citations
Structural characterization of bulk GaN crystals grown under high hydrostatic pressure

Zuzanna Liliental-Weber;C. Kisielowski;S. Ruvimov;Y. Chen

112
Citations
Progress on and challenges of p-type formation for GaN power devices

Tetsuo Narita;Hikaru Yoshida;Kazuyoshi Tomita;Kazuyoshi Tomita;Keita Kataoka

103
Citations
Heat capacity of α-GaN : Isotope effects

R. K. Kremer;M. Cardona;E. Schmitt;J. Blumm

96
Citations
Deposition of thick GaN layers by HVPE on the pressure grown GaN substrates

B. Łucznik;B. Pastuszka;I. Grzegory;M. Boćkowski

96
Citations
The microstructure of gallium nitride monocrystals grown at high pressure

M. Leszczynski;I. Grzegory;H. Teisseyre;T. Suski

90
Citations
Structure and Mechanical Properties of Compressed Sodium Aluminosilicate Glasses

Tobias Kjær Bechgaard;Ashutosh Goel;Randall E. Youngman;John C. Mauro

0
Citations