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Materials Science

D-Index
49
Citations
9979
World Ranking
10458
National Ranking
32

Overview

Michal Bockowski is affiliated with the Polish Academy of Sciences in Poland. Their research spans multiple fields including engineering, materials science, and physics and astronomy, with a strong focus on semiconductor devices and materials.

Their work covers specialized subfields such as condensed matter physics, electrical and electronic engineering, materials chemistry, electronic, optical and magnetic materials, and mechanics of materials.

The main topics they research include:

  • GaN-based semiconductor devices and materials
  • Semiconductor materials and devices
  • Ga2O3 and related materials
  • Metal and thin film mechanics
  • ZnO doping and properties
  • Glass properties and applications
  • Silicon carbide semiconductor technologies

Michal Bockowski frequently publishes in several venues. The most notable among these are:

  • Journal of Applied Physics
  • Applied Physics Express
  • The Cambridge Structural Database
  • SSRN Electronic Journal
  • Journal of Crystal Growth

They collaborate regularly with a group of co-authors, including Kacper Sierakowski, Tomasz Sochacki, Małgorzata Iwińska, Tetsu Kachi, and Robert Kucharski.

Selected recent publications highlight their focus on semiconductor material growth, device formation, and mechanical properties. These include:

  • Growth of bulk GaN crystals (2020) published in Journal of Applied Physics
  • Progress on and challenges of p-type formation for GaN power devices (2020) published in Journal of Applied Physics
  • High Pressure Processing of Ion Implanted GaN (2020) published in Electronics
  • Bond Switching in Densified Oxide Glass Enables Record-High Fracture Toughness (2021) published in ACS Applied Materials & Interfaces
  • Recent progress in basic ammonothermal GaN crystal growth (2020) published in Journal of Crystal Growth

Best Publications

  • Lattice parameters of gallium nitride

    M. Leszczynski;H. Teisseyre;T. Suski;I. Grzegory

  • Mechanism of yellow luminescence in GaN

    T. Suski;P. Perlin;H. Teisseyre;M. Leszczyński

  • Thermal conductivity of GaN crystals in 4.2-300 K range

    A. Jeżowski;B.A. Danilchenko;M. Boćkowski;I. Grzegory

  • III V Nitrides—thermodynamics and crystal growth at high N2 pressure

    I. Grzegory;J. Jun;M. Boćkowski;St. Krukowski

  • Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing

    Michal Bockowski;Michal Bockowski

  • Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substrates

    K. Pakuła;A. Wysmołek;K.P. Korona;J.M. Baranowski;J.M. Baranowski

  • Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds

    M Bockowski;M Iwinska;M Amilusik;M Fijalkowski

  • Thermal properties of indium nitride

    S. Krukowski;A. Witek;J. Adamczyk;J. Jun

  • Discovery of Ultra-Crack-Resistant Oxide Glasses with Adaptive Networks

    Kacper Januchta;Randall E. Youngman;Ashutosh Goel;Mathieu Bauchy

  • Technology of Gallium Nitride Crystal Growth

    Dirk Ehrentraut;Elke Meissner;Michal Bockowski

  • Structure and mechanical properties of compressed sodium aluminosilicate glasses: Role of non-bridging oxygens

    Tobias Kjær Bechgaard;Ashutosh Goel;Randall E. Youngman;John C. Mauro

  • Identification of the prime optical center in GaN:Eu3+

    I. S Roqan;K. P O'Donnell;R. W Martin;P. R Edwards

  • Growth of bulk GaN crystals

    R. Kucharski;T. Sochacki;B. Lucznik;M. Bockowski;M. Bockowski

  • Basic ammonothermal growth of Gallium Nitride – State of the art, challenges, perspectives

    Unknown

  • Optical and magnetic properties of Mn in bulk GaN

    A. Wolos;M. Palczewska;M. Zajac;J. Gosk;J. Gosk

  • Lattice constants, thermal expansion and compressibility of gallium nitride

    M Leszczynski;T Suski;P Perlin;H Teisseyre

  • Structural characterization of bulk GaN crystals grown under high hydrostatic pressure

    Zuzanna Liliental-Weber;C. Kisielowski;S. Ruvimov;Y. Chen

  • Progress on and challenges of p-type formation for GaN power devices

    Tetsuo Narita;Hikaru Yoshida;Kazuyoshi Tomita;Kazuyoshi Tomita;Keita Kataoka

  • Heat capacity of α-GaN : Isotope effects

    R. K. Kremer;M. Cardona;E. Schmitt;J. Blumm

  • Deposition of thick GaN layers by HVPE on the pressure grown GaN substrates

    B. Łucznik;B. Pastuszka;I. Grzegory;M. Boćkowski

  • The microstructure of gallium nitride monocrystals grown at high pressure

    M. Leszczynski;I. Grzegory;H. Teisseyre;T. Suski

  • Structure and Mechanical Properties of Compressed Sodium Aluminosilicate Glasses

    Tobias Kjær Bechgaard;Ashutosh Goel;Randall E. Youngman;John C. Mauro

Frequent Co-Authors

Izabella Grzegory
Izabella Grzegory Polish Academy of Sciences
Morten Mattrup Smedskjær
Morten Mattrup Smedskjær Aalborg University
Tadeusz Suski
Tadeusz Suski Polish Academy of Sciences
Sylwester Porowski
Sylwester Porowski Polish Academy of Sciences
John C. Mauro
John C. Mauro Pennsylvania State University
Jun Suda
Jun Suda Nagoya University
Mathieu Bauchy
Mathieu Bauchy University of California, Los Angeles
Zlatko Sitar
Zlatko Sitar North Carolina State University
Ramon Collazo
Ramon Collazo North Carolina State University
Yuanzheng Yue
Yuanzheng Yue Aalborg University

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