World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
51
Citations
9012
World Ranking
2704
National Ranking
96

Overview

Jun Suda is affiliated with Nagoya University in Japan and has contributed extensively to research in engineering and physics, with a focus on semiconductor devices and materials. Their work spans particularly across electrical and electronic engineering and condensed matter physics, emphasizing materials relevant to semiconductor technology.

The primary research topics covered in Suda's publications include:

  • GaN-based semiconductor devices and materials
  • Semiconductor materials and devices
  • Silicon Carbide Semiconductor Technologies
  • Ga2O3 and related materials
  • Metal and Thin Film Mechanics
  • ZnO doping and properties
  • Semiconductor materials and interfaces

Suda has published extensively in several scientific journals. Frequent publication venues include:

  • Applied Physics Express
  • Japanese Journal of Applied Physics
  • IEEE Transactions on Electron Devices
  • Journal of Applied Physics
  • Applied Physics Letters

Among recent papers, notable works include:

  • "Impact ionization coefficients and critical electric field in GaN," published in 2021 in Journal of Applied Physics
  • "Progress on and challenges of p-type formation for GaN power devices," published in 2020 in Journal of Applied Physics
  • "Redistribution of Mg and H atoms in Mg-implanted GaN through ultra-high-pressure annealing," published in 2020 in Applied Physics Express
  • "Defect evolution in Mg ions implanted GaN upon high temperature and ultrahigh N2 partial pressure annealing: Transmission electron microscopy analysis," published in 2020 in Journal of Applied Physics
  • "Identification of origin of E_C -0.6 eV electron trap level by correlation with iron concentration in n-type GaN grown on GaN freestanding substrate by metalorganic vapor phase epitaxy," published in 2020 in Applied Physics Express

Frequent co-authors in Suda's publications include:

  • Tetsu Kachi
  • Masahiro Horita
  • Tetsuo Narita
  • Michał Boćkowski
  • Hideki Sakurai

The research conducted by Jun Suda addresses key challenges and advances in the field of semiconductor materials and device technologies, with a particular emphasis on wide bandgap semiconductors such as GaN and silicon carbide.

Best Publications

  • Negative-U System of Carbon Vacancy in 4H-SiC

    NT Son;X T Trinh;Lars Sundnes Løvlie;Bengt Gunnar Svensson

  • Ultrahigh-Voltage SiC p-i-n Diodes With Improved Forward Characteristics

    Naoki Kaji;Hiroki Niwa;Jun Suda;Tsunenobu Kimoto

  • Characterization of stacking faults in 4H-SiC epilayers by room-temperature microphotoluminescence mapping

    Gan Feng;Jun Suda;Tsunenobu Kimoto

  • Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation

    Tsunenobu Kimoto;Katsunori Danno;Jun Suda

  • The temperature dependence of the refractive indices of GaN and AlN from room temperature up to 515 °C

    Naoki Watanabe;Tsunenobu Kimoto;Jun Suda

  • Nearly Ideal Current–Voltage Characteristics of Schottky Barrier Diodes Formed on Hydride-Vapor-Phase-Epitaxy-Grown GaN Free-Standing Substrates

    Jun Suda;Kazuki Yamaji;Yuichirou Hayashi;Tsunenobu Kimoto

  • Temperature and doping dependencies of electrical properties in Al-doped 4H-SiC epitaxial layers

    Atsushi Koizumi;Jun Suda;Tsunenobu Kimoto

  • Space-Modulated Junction Termination Extension for Ultrahigh-Voltage p-i-n Diodes in 4H-SiC

    Gan Feng;J. Suda;T. Kimoto

  • Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium Nitride.

    Hiroyuki Kinoshita;Shigeki Otani;Satoshi Kamiyama;Hiroshi Amano

  • 21-kV SiC BJTs With Space-Modulated Junction Termination Extension

    H. Miyake;T. Okuda;H. Niwa;T. Kimoto

  • Interface Properties of 4H-SiC ( $11ar {2}0$ ) and ( $1ar {1}00$ ) MOS Structures Annealed in NO

    Seiya Nakazawa;Takafumi Okuda;Jun Suda;Takashi Nakamura

  • Simulation and Experimental Study on the Junction Termination Structure for High-Voltage 4H-SiC PiN Diodes

    T. Hiyoshi;T. Hori;J. Suda;T. Kimoto

  • Impact Ionization Coefficients in 4H-SiC Toward Ultrahigh-Voltage Power Devices

    Hiroki Niwa;Jun Suda;Tsunenobu Kimoto

  • Impact ionization coefficients and critical electric field in GaN

    Takuya Maeda;Tetsuo Narita;Shinji Yamada;Tetsu Kachi

  • Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC

    S. Kamiyama;T. Maeda;Y. Nakamura;M. Iwaya

  • Progress on and challenges of p-type formation for GaN power devices

    Tetsuo Narita;Hikaru Yoshida;Kazuyoshi Tomita;Kazuyoshi Tomita;Keita Kataoka

  • Reduction in potential barrier height of AlGaN∕GaN heterostructures by SiN passivation

    N. Onojima;M. Higashiwaki;J. Suda;T. Kimoto

  • Design and Fabrication of GaN p-n Junction Diodes With Negative Beveled-Mesa Termination

    Takuya Maeda;Tetsuo Narita;Hiroyuki Ueda;Masakazu Kanechika

  • Analytical model for reduction of deep levels in SiC by thermal oxidation

    Koutarou Kawahara;Jun Suda;Tsunenobu Kimoto

  • Triple Shockley type stacking faults in 4H-SiC epilayers

    Gan Feng;Jun Suda;Tsunenobu Kimoto

  • Effects of Nitridation on 4H-SiC MOSFETs Fabricated on Various Crystal Faces

    Y. Nanen;M. Kato;J. Suda;T. Kimoto

  • 21.7 kV 4H-SiC PiN Diode with a Space-Modulated Junction Termination Extension

    Hiroki Niwa;Jun Suda;Tsunenobu Kimoto

  • High temperature annealing of n-type 4H-SiC: Impact on intrinsic defects and carrier lifetime

    Bernd Zippelius;Jun Suda;Tsunenobu Kimoto

Frequent Co-Authors

Tsunenobu Kimoto
Tsunenobu Kimoto Kyoto University
Hiroyuki Matsunami
Hiroyuki Matsunami Kyoto University
Michal Bockowski
Michal Bockowski Polish Academy of Sciences
Yoichi Kawakami
Yoichi Kawakami Kyoto University
Shizuo Fujita
Shizuo Fujita Kyoto University
Erik Janzén
Erik Janzén Linköping University
Nguyen Tien Son
Nguyen Tien Son Linköping University
Tamotsu Hashizume
Tamotsu Hashizume Hokkaido University
Hiroshi Amano
Hiroshi Amano Nagoya University
Shigefusa F. Chichibu
Shigefusa F. Chichibu Tohoku University

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