Jun Suda mainly investigates Optoelectronics, Wide-bandgap semiconductor, Epitaxy, Silicon carbide and Analytical chemistry. Diode is the focus of his Optoelectronics research. His Wide-bandgap semiconductor research incorporates elements of Annealing, Atmospheric temperature range, Edge, Photoluminescence and Thermal oxidation.
His Epitaxy research incorporates themes from Crystallography and Electron diffraction, Diffraction. His Crystallography study combines topics in areas such as Layer, Substrate and Composite material. As a part of the same scientific family, he mostly works in the field of Analytical chemistry, focusing on Stacking fault and, on occasion, Full width at half maximum.
His primary areas of study are Optoelectronics, Analytical chemistry, Epitaxy, Molecular beam epitaxy and Doping. The Optoelectronics study combines topics in areas such as Gallium nitride, Silicon carbide and MOSFET. His work carried out in the field of Silicon carbide brings together such families of science as Transistor and Voltage.
His Analytical chemistry research is multidisciplinary, incorporating perspectives in Acceptor and Annealing. The Epitaxy study which covers Crystallography that intersects with Condensed matter physics. His study in Molecular beam epitaxy is interdisciplinary in nature, drawing from both Nucleation, Thin film and Electron diffraction, Diffraction, Reflection high-energy electron diffraction.
His primary areas of investigation include Optoelectronics, Analytical chemistry, Diode, Annealing and Gallium nitride. His Optoelectronics study incorporates themes from Layer, High-electron-mobility transistor and Gamma ray irradiation. His studies deal with areas such as Acceptor, Quartz and Epitaxy as well as Analytical chemistry.
His Epitaxy study frequently draws connections to adjacent fields such as Substrate. The various areas that Jun Suda examines in his Diode study include Photocurrent, Breakdown voltage, p–n junction and Depletion region. His research on Annealing also deals with topics like
Jun Suda spends much of his time researching Analytical chemistry, Diode, Annealing, Epitaxy and p–n junction. His study looks at the intersection of Analytical chemistry and topics like Penning trap with Isothermal process. The subject of his Diode research is within the realm of Optoelectronics.
Jun Suda connects Optoelectronics with Communication channel in his research. His Annealing research is multidisciplinary, relying on both Ion implantation, Gallium nitride, Substrate and Doping. His studies in Epitaxy integrate themes in fields like Deep-level transient spectroscopy, Acceptor, Quartz and Hydride.
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Negative-U System of Carbon Vacancy in 4H-SiC
NT Son;X T Trinh;Lars Sundnes Løvlie;Bengt Gunnar Svensson.
Physical Review Letters (2012)
Characterization of stacking faults in 4H-SiC epilayers by room-temperature microphotoluminescence mapping
Gan Feng;Jun Suda;Tsunenobu Kimoto.
Applied Physics Letters (2008)
Ultrahigh-Voltage SiC p-i-n Diodes With Improved Forward Characteristics
Naoki Kaji;Hiroki Niwa;Jun Suda;Tsunenobu Kimoto.
IEEE Transactions on Electron Devices (2015)
Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation
Tsunenobu Kimoto;Katsunori Danno;Jun Suda.
Physica Status Solidi B-basic Solid State Physics (2008)
Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium Nitride.
Hiroyuki Kinoshita;Shigeki Otani;Satoshi Kamiyama;Hiroshi Amano.
Japanese Journal of Applied Physics (2001)
Nearly Ideal Current–Voltage Characteristics of Schottky Barrier Diodes Formed on Hydride-Vapor-Phase-Epitaxy-Grown GaN Free-Standing Substrates
Jun Suda;Kazuki Yamaji;Yuichirou Hayashi;Tsunenobu Kimoto.
Applied Physics Express (2010)
The temperature dependence of the refractive indices of GaN and AlN from room temperature up to 515 °C
Naoki Watanabe;Tsunenobu Kimoto;Jun Suda.
Journal of Applied Physics (2008)
Space-Modulated Junction Termination Extension for Ultrahigh-Voltage p-i-n Diodes in 4H-SiC
Gan Feng;J. Suda;T. Kimoto.
IEEE Transactions on Electron Devices (2012)
Temperature and doping dependencies of electrical properties in Al-doped 4H-SiC epitaxial layers
Atsushi Koizumi;Jun Suda;Tsunenobu Kimoto.
Journal of Applied Physics (2009)
21-kV SiC BJTs With Space-Modulated Junction Termination Extension
H. Miyake;T. Okuda;H. Niwa;T. Kimoto.
IEEE Electron Device Letters (2012)
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