World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
51
Citations
9012
World Ranking
2704
National Ranking
96

Jun Suda publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Jun Suda sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 548 publications — 88th percentile

88% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Jun Suda D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Jun Suda sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 51 D-Index — 63rd percentile

63% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Jun Suda is affiliated with Nagoya University in Japan and has contributed extensively to research in engineering and physics, with a focus on semiconductor devices and materials. Their work spans particularly across electrical and electronic engineering and condensed matter physics, emphasizing materials relevant to semiconductor technology.

The primary research topics covered in Suda's publications include:

  • GaN-based semiconductor devices and materials
  • Semiconductor materials and devices
  • Silicon Carbide Semiconductor Technologies
  • Ga2O3 and related materials
  • Metal and Thin Film Mechanics
  • ZnO doping and properties
  • Semiconductor materials and interfaces

Suda has published extensively in several scientific journals. Frequent publication venues include:

  • Applied Physics Express
  • Japanese Journal of Applied Physics
  • IEEE Transactions on Electron Devices
  • Journal of Applied Physics
  • Applied Physics Letters

Among recent papers, notable works include:

  • "Impact ionization coefficients and critical electric field in GaN," published in 2021 in Journal of Applied Physics
  • "Progress on and challenges of p-type formation for GaN power devices," published in 2020 in Journal of Applied Physics
  • "Redistribution of Mg and H atoms in Mg-implanted GaN through ultra-high-pressure annealing," published in 2020 in Applied Physics Express
  • "Defect evolution in Mg ions implanted GaN upon high temperature and ultrahigh N2 partial pressure annealing: Transmission electron microscopy analysis," published in 2020 in Journal of Applied Physics
  • "Identification of origin of E_C -0.6 eV electron trap level by correlation with iron concentration in n-type GaN grown on GaN freestanding substrate by metalorganic vapor phase epitaxy," published in 2020 in Applied Physics Express

Frequent co-authors in Suda's publications include:

  • Tetsu Kachi
  • Masahiro Horita
  • Tetsuo Narita
  • Michał Boćkowski
  • Hideki Sakurai

The research conducted by Jun Suda addresses key challenges and advances in the field of semiconductor materials and device technologies, with a particular emphasis on wide bandgap semiconductors such as GaN and silicon carbide.

Best Publications

  • Negative-U System of Carbon Vacancy in 4H-SiC

    NT Son;X T Trinh;Lars Sundnes Løvlie;Bengt Gunnar Svensson

  • Ultrahigh-Voltage SiC p-i-n Diodes With Improved Forward Characteristics

    Naoki Kaji;Hiroki Niwa;Jun Suda;Tsunenobu Kimoto

  • Characterization of stacking faults in 4H-SiC epilayers by room-temperature microphotoluminescence mapping

    Gan Feng;Jun Suda;Tsunenobu Kimoto

  • Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation

    Tsunenobu Kimoto;Katsunori Danno;Jun Suda

  • The temperature dependence of the refractive indices of GaN and AlN from room temperature up to 515 °C

    Naoki Watanabe;Tsunenobu Kimoto;Jun Suda

  • Nearly Ideal Current–Voltage Characteristics of Schottky Barrier Diodes Formed on Hydride-Vapor-Phase-Epitaxy-Grown GaN Free-Standing Substrates

    Jun Suda;Kazuki Yamaji;Yuichirou Hayashi;Tsunenobu Kimoto

  • Temperature and doping dependencies of electrical properties in Al-doped 4H-SiC epitaxial layers

    Atsushi Koizumi;Jun Suda;Tsunenobu Kimoto

  • Space-Modulated Junction Termination Extension for Ultrahigh-Voltage p-i-n Diodes in 4H-SiC

    Gan Feng;J. Suda;T. Kimoto

  • Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium Nitride.

    Hiroyuki Kinoshita;Shigeki Otani;Satoshi Kamiyama;Hiroshi Amano

  • 21-kV SiC BJTs With Space-Modulated Junction Termination Extension

    H. Miyake;T. Okuda;H. Niwa;T. Kimoto

  • Interface Properties of 4H-SiC ( $11ar {2}0$ ) and ( $1ar {1}00$ ) MOS Structures Annealed in NO

    Seiya Nakazawa;Takafumi Okuda;Jun Suda;Takashi Nakamura

  • Simulation and Experimental Study on the Junction Termination Structure for High-Voltage 4H-SiC PiN Diodes

    T. Hiyoshi;T. Hori;J. Suda;T. Kimoto

  • Impact Ionization Coefficients in 4H-SiC Toward Ultrahigh-Voltage Power Devices

    Hiroki Niwa;Jun Suda;Tsunenobu Kimoto

  • Impact ionization coefficients and critical electric field in GaN

    Takuya Maeda;Tetsuo Narita;Shinji Yamada;Tetsu Kachi

  • Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC

    S. Kamiyama;T. Maeda;Y. Nakamura;M. Iwaya

  • Progress on and challenges of p-type formation for GaN power devices

    Tetsuo Narita;Hikaru Yoshida;Kazuyoshi Tomita;Kazuyoshi Tomita;Keita Kataoka

  • Reduction in potential barrier height of AlGaN∕GaN heterostructures by SiN passivation

    N. Onojima;M. Higashiwaki;J. Suda;T. Kimoto

  • Design and Fabrication of GaN p-n Junction Diodes With Negative Beveled-Mesa Termination

    Takuya Maeda;Tetsuo Narita;Hiroyuki Ueda;Masakazu Kanechika

  • Analytical model for reduction of deep levels in SiC by thermal oxidation

    Koutarou Kawahara;Jun Suda;Tsunenobu Kimoto

  • Triple Shockley type stacking faults in 4H-SiC epilayers

    Gan Feng;Jun Suda;Tsunenobu Kimoto

  • Effects of Nitridation on 4H-SiC MOSFETs Fabricated on Various Crystal Faces

    Y. Nanen;M. Kato;J. Suda;T. Kimoto

  • 21.7 kV 4H-SiC PiN Diode with a Space-Modulated Junction Termination Extension

    Hiroki Niwa;Jun Suda;Tsunenobu Kimoto

  • High temperature annealing of n-type 4H-SiC: Impact on intrinsic defects and carrier lifetime

    Bernd Zippelius;Jun Suda;Tsunenobu Kimoto

Frequent Co-Authors

Tsunenobu Kimoto
Tsunenobu Kimoto Kyoto University
Hiroyuki Matsunami
Hiroyuki Matsunami Kyoto University
Michal Bockowski
Michal Bockowski Polish Academy of Sciences
Yoichi Kawakami
Yoichi Kawakami Kyoto University
Shizuo Fujita
Shizuo Fujita Kyoto University
Erik Janzén
Erik Janzén Linköping University
Nguyen Tien Son
Nguyen Tien Son Linköping University
Tamotsu Hashizume
Tamotsu Hashizume Hokkaido University
Hiroshi Amano
Hiroshi Amano Nagoya University
Shigefusa F. Chichibu
Shigefusa F. Chichibu Tohoku University

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