World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
55
Citations
13297
World Ranking
2152
National Ranking
29

Materials Science

D-Index
59
Citations
14049
World Ranking
7309
National Ranking
77

Mikael Östling publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Mikael Östling sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 636 publications — 92nd percentile

92% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Mikael Östling D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Mikael Östling sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 55 D-Index — 69th percentile

69% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2004 - IEEE Fellow For contributions to semiconductor device technology and education.

Overview

Mikael Östling is affiliated with the Royal Institute of Technology in Sweden. Their research focuses on several key areas within engineering and materials science, including electrical and electronic engineering, materials chemistry, biomedical engineering, atomic and molecular physics, and optics. The scientist's work extensively covers semiconductor materials and devices along with nanowire synthesis and applications.

The following are main topics of their scholarly work:

  • Semiconductor materials and devices
  • Nanowire Synthesis and Applications
  • Thin-Film Transistor Technologies
  • Silicon Nanostructures and Photoluminescence
  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and interfaces
  • Silicon and Solar Cell Technologies

Examples of recent significant publications authored or co-authored by Mikael Östling include:

  • Manufacture and characterization of graphene membranes with suspended silicon proof masses for MEMS and NEMS applications (2020), published in Microsystems & Nanoengineering
  • A Silicon Carbide 256 Pixel UV Image Sensor Array Operating at 400 °C (2020), published in IEEE Journal of the Electron Devices Society
  • (Invited) Sequential 3D Integration of Ge Transistors on Si CMOS (2023), published in ECS Transactions
  • Silicon Carbide Power Devices: Evolution, Applications, and Future Opportunities (2024), published in IEEE Electron Devices Magazine
  • Si-Passivated Ge Gate Stacks with Low Interface State and Oxide Trap Densities Using Thulium Silicate (2020), published in ECS Transactions

The publication venues where the scientist frequently contributes include:

  • ECS Transactions
  • ECS Meeting Abstracts
  • Microsystems & Nanoengineering
  • IEEE Journal of the Electron Devices Society
  • IEEE Electron Devices Magazine

Mikael Östling has collaborated regularly with several coauthors, with whom numerous publications have been produced. Frequent collaborators are:

  • Per-Erik Hellström (7 joint publications)
  • Laura Žurauskaitė (3 joint publications)
  • Ahmad Abedin (3 joint publications)
  • Xuge Fan (1 joint publication)
  • Anderson D. Smith (1 joint publication)

Throughout their career, Mikael Östling has concentrated primarily on engineering disciplines, composing 22 publications in general Engineering and 5 in Materials Science. Their expertise spans subfields such as Electrical and Electronic Engineering, Materials Chemistry, and Biomedical Engineering. This breadth is reflected in their research outputs.

Recognition of their contributions includes being named an IEEE Fellow in 2004 for contributions to semiconductor device technology and education.

Best Publications

  • Efficient Inkjet Printing of Graphene

    Jiantong Li;Fei Ye;Sam Vaziri;Mamoun Muhammed

  • Metal silicides in CMOS technology : Past, present, and future trends

    Shi-Li Zhang;Mikael Östling

  • Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes

    Anderson Smith;Frank Niklaus;A. Paussa;Sam Vaziri

  • Low-Frequency Noise in Advanced MOS Devices

    Martin V. Haartman;Mikael Ostling

  • Resistive graphene humidity sensors with rapid and direct electrical readout

    Anderson David Smith;Karim Elgammal;Frank Niklaus;Anna Delin;Anna Delin

  • Scalable Fabrication and Integration of Graphene Microsupercapacitors through Full Inkjet Printing

    Jiantong Li;Jiantong Li;Szymon Sollami Delekta;Panpan Zhang;Sheng Yang

  • Residual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene

    Grzegorz Lupina;Julia Kitzmann;Ioan Costina;Mindaugas Lukosius

  • A Comparative Study of Two Different Schemes to Dopant Segregation at NiSi/Si and PtSi/Si Interfaces for Schottky Barrier Height Lowering

    Zhijun Qiu;Zhen Zhang;M. Ostling;Shi-Li Zhang

  • A Graphene-Based Hot Electron Transistor

    Sam Vaziri;Grzegorz Lupina;Christoph Henkel;Anderson D. Smith

  • Inkjet Printing of MoS2

    Jiantong Li;Maziar M. Naiini;Sam Vaziri;Max C. Lemme;Max C. Lemme

  • SiC power devices — Present status, applications and future perspective

    Mikael Ostling;Reza Ghandi;Carl-Mikael Zetterling

  • Inductively coupled plasma etching of bulk 6H-SiC and thin-film SiCN in NF3 chemistries

    J. J. Wang;E. S. Lambers;S. J. Pearton;Mikael Östling

  • Vertical Graphene Base Transistor

    Wolfgang Mehr;J. Christoph Scheytt;Jarek Dabrowski;Gunther Lippert

  • Vertical Graphene Base Transistor

    W. Mehr;J. Dabrowski;J. C. Scheytt;G. Lippert

  • Inkjet printed highly transparent and flexible graphene micro-supercapacitors

    Szymon Sollami Delekta;Anderson David Smith;Jiantong Li;Mikael Östling

  • Piezoresistive Properties of Suspended Graphene Membranes under Uniaxial and Biaxial Strain in Nanoelectromechanical Pressure Sensors

    Anderson David Smith;Frank Niklaus;Alan Paussa;Stephan Schröder

  • Prevention of Graphene Restacking for Performance Boost of Supercapacitors—A Review

    Jiantong Li;Mikael Östling

  • Schottky-Barrier Height Tuning by Means of Ion Implantation Into Preformed Silicide Films Followed by Drive-In Anneal

    Zhen Zhang;Zhijun Qiu;Ran Liu;M. Ostling

  • Graphene ribbons with suspended masses as transducers in ultra-small nanoelectromechanical accelerometers

    Xuge Fan;Fredrik Forsberg;Anderson D. Smith;Stephan Schröder

  • Chemical vapor deposited graphene: From synthesis to applications

    S. Kataria;S. Wagner;J. Ruhkopf;A. Gahoi

  • 500 $^{\circ}{ m C}$ Bipolar Integrated OR/NOR Gate in 4H-SiC

    Luigia Lanni;Bengt Gunnar Malm;Mikael Ostling;Carl-Mikael Zetterling

  • A comparative study of the diffusion barrier properties of TiN and ZrN

    M. Östling;S. Nygren;C.S. Petersson;H. Norström

Frequent Co-Authors

Carl-Mikael Zetterling
Carl-Mikael Zetterling Royal Institute of Technology
Max C. Lemme
Max C. Lemme RWTH Aachen University
Jun Lu
Jun Lu Zhejiang University
Frank Niklaus
Frank Niklaus Royal Institute of Technology
Erich Kasper
Erich Kasper University of Stuttgart
Stefan Wagner
Stefan Wagner University of Stuttgart
François M. d'Heurle
François M. d'Heurle IBM (United States)
Sergei Popov
Sergei Popov Royal Institute of Technology
Takeshi Ohshima
Takeshi Ohshima Japan Atomic Energy Agency
Anders Hallén
Anders Hallén Royal Institute of Technology

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