World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
55
Citations
13297
World Ranking
2152
National Ranking
29

Materials Science

D-Index
59
Citations
14049
World Ranking
7311
National Ranking
77

Research.com Recognitions

  • 2004 - IEEE Fellow For contributions to semiconductor device technology and education.

Overview

Mikael Östling is affiliated with the Royal Institute of Technology in Sweden. Their research focuses on several key areas within engineering and materials science, including electrical and electronic engineering, materials chemistry, biomedical engineering, atomic and molecular physics, and optics. The scientist's work extensively covers semiconductor materials and devices along with nanowire synthesis and applications.

The following are main topics of their scholarly work:

  • Semiconductor materials and devices
  • Nanowire Synthesis and Applications
  • Thin-Film Transistor Technologies
  • Silicon Nanostructures and Photoluminescence
  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and interfaces
  • Silicon and Solar Cell Technologies

Examples of recent significant publications authored or co-authored by Mikael Östling include:

  • Manufacture and characterization of graphene membranes with suspended silicon proof masses for MEMS and NEMS applications (2020), published in Microsystems & Nanoengineering
  • A Silicon Carbide 256 Pixel UV Image Sensor Array Operating at 400 °C (2020), published in IEEE Journal of the Electron Devices Society
  • (Invited) Sequential 3D Integration of Ge Transistors on Si CMOS (2023), published in ECS Transactions
  • Silicon Carbide Power Devices: Evolution, Applications, and Future Opportunities (2024), published in IEEE Electron Devices Magazine
  • Si-Passivated Ge Gate Stacks with Low Interface State and Oxide Trap Densities Using Thulium Silicate (2020), published in ECS Transactions

The publication venues where the scientist frequently contributes include:

  • ECS Transactions
  • ECS Meeting Abstracts
  • Microsystems & Nanoengineering
  • IEEE Journal of the Electron Devices Society
  • IEEE Electron Devices Magazine

Mikael Östling has collaborated regularly with several coauthors, with whom numerous publications have been produced. Frequent collaborators are:

  • Per-Erik Hellström (7 joint publications)
  • Laura Žurauskaitė (3 joint publications)
  • Ahmad Abedin (3 joint publications)
  • Xuge Fan (1 joint publication)
  • Anderson D. Smith (1 joint publication)

Throughout their career, Mikael Östling has concentrated primarily on engineering disciplines, composing 22 publications in general Engineering and 5 in Materials Science. Their expertise spans subfields such as Electrical and Electronic Engineering, Materials Chemistry, and Biomedical Engineering. This breadth is reflected in their research outputs.

Recognition of their contributions includes being named an IEEE Fellow in 2004 for contributions to semiconductor device technology and education.

Best Publications

  • Efficient Inkjet Printing of Graphene

    Jiantong Li;Fei Ye;Sam Vaziri;Mamoun Muhammed

  • Metal silicides in CMOS technology : Past, present, and future trends

    Shi-Li Zhang;Mikael Östling

  • Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes

    Anderson Smith;Frank Niklaus;A. Paussa;Sam Vaziri

  • Low-Frequency Noise in Advanced MOS Devices

    Martin V. Haartman;Mikael Ostling

  • Resistive graphene humidity sensors with rapid and direct electrical readout

    Anderson David Smith;Karim Elgammal;Frank Niklaus;Anna Delin;Anna Delin

  • Scalable Fabrication and Integration of Graphene Microsupercapacitors through Full Inkjet Printing

    Jiantong Li;Jiantong Li;Szymon Sollami Delekta;Panpan Zhang;Sheng Yang

  • Residual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene

    Grzegorz Lupina;Julia Kitzmann;Ioan Costina;Mindaugas Lukosius

  • A Comparative Study of Two Different Schemes to Dopant Segregation at NiSi/Si and PtSi/Si Interfaces for Schottky Barrier Height Lowering

    Zhijun Qiu;Zhen Zhang;M. Ostling;Shi-Li Zhang

  • A Graphene-Based Hot Electron Transistor

    Sam Vaziri;Grzegorz Lupina;Christoph Henkel;Anderson D. Smith

  • Inkjet Printing of MoS2

    Jiantong Li;Maziar M. Naiini;Sam Vaziri;Max C. Lemme;Max C. Lemme

  • SiC power devices — Present status, applications and future perspective

    Mikael Ostling;Reza Ghandi;Carl-Mikael Zetterling

  • Inductively coupled plasma etching of bulk 6H-SiC and thin-film SiCN in NF3 chemistries

    J. J. Wang;E. S. Lambers;S. J. Pearton;Mikael Östling

  • Vertical Graphene Base Transistor

    Wolfgang Mehr;J. Christoph Scheytt;Jarek Dabrowski;Gunther Lippert

  • Vertical Graphene Base Transistor

    W. Mehr;J. Dabrowski;J. C. Scheytt;G. Lippert

  • Inkjet printed highly transparent and flexible graphene micro-supercapacitors

    Szymon Sollami Delekta;Anderson David Smith;Jiantong Li;Mikael Östling

  • Piezoresistive Properties of Suspended Graphene Membranes under Uniaxial and Biaxial Strain in Nanoelectromechanical Pressure Sensors

    Anderson David Smith;Frank Niklaus;Alan Paussa;Stephan Schröder

  • Prevention of Graphene Restacking for Performance Boost of Supercapacitors—A Review

    Jiantong Li;Mikael Östling

  • Schottky-Barrier Height Tuning by Means of Ion Implantation Into Preformed Silicide Films Followed by Drive-In Anneal

    Zhen Zhang;Zhijun Qiu;Ran Liu;M. Ostling

  • Graphene ribbons with suspended masses as transducers in ultra-small nanoelectromechanical accelerometers

    Xuge Fan;Fredrik Forsberg;Anderson D. Smith;Stephan Schröder

  • Chemical vapor deposited graphene: From synthesis to applications

    S. Kataria;S. Wagner;J. Ruhkopf;A. Gahoi

  • 500 $^{\circ}{ m C}$ Bipolar Integrated OR/NOR Gate in 4H-SiC

    Luigia Lanni;Bengt Gunnar Malm;Mikael Ostling;Carl-Mikael Zetterling

  • A comparative study of the diffusion barrier properties of TiN and ZrN

    M. Östling;S. Nygren;C.S. Petersson;H. Norström

Frequent Co-Authors

Carl-Mikael Zetterling
Carl-Mikael Zetterling Royal Institute of Technology
Max C. Lemme
Max C. Lemme RWTH Aachen University
Jun Lu
Jun Lu Zhejiang University
Frank Niklaus
Frank Niklaus Royal Institute of Technology
Erich Kasper
Erich Kasper University of Stuttgart
Stefan Wagner
Stefan Wagner University of Stuttgart
François M. d'Heurle
François M. d'Heurle IBM (United States)
Sergei Popov
Sergei Popov Royal Institute of Technology
Takeshi Ohshima
Takeshi Ohshima Japan Atomic Energy Agency
Anders Hallén
Anders Hallén Royal Institute of Technology

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