Anders Hallén

Best Publications

• Divacancy acceptor levels in ion-irradiated silicon.

  Unknown

  245
  Citations

• Lifetime in proton irradiated silicon

  Unknown

  228
  Citations

• GENERATION OF VACANCY-TYPE POINT DEFECTS IN SINGLE COLLISION CASCADES DURING SWIFT-ION BOMBARDMENT OF SILICON

  B. G. Svensson;C. Jagadish;A. Hallén;J. Lalita

  124
  Citations

• Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon

  P Pellegrino;P Leveque;J Lalita;A Hallen

  124
  Citations

• Pseudodonor nature of the DI defect in 4H-SiC

  L. Storasta;F. H. C. Carlsson;S. G. Sridhara;J. P. Bergman

  124
  Citations

• Effects of implantation temperature on damage accumulation in Al-implanted 4H-SiC

  Yanwen Zhang;William J. Weber;Weilin Jiang;Chong M. Wang

  118
  Citations

• Helium entrapment in a nanostructured ferritic alloy

  Philip D Edmondson;Chad M Parish;Yanwen Zhang;Anders Hallen

  112
  Citations

• Electrically active defects in irradiated 4H-SiC

  M. L. David;G. Alfieri;E. M. Monakhov;Anders. Hallén

  108
  Citations

• Damage evolution and recovery on both Si and C sublattices in Al-implanted 4H–SiC studied by Rutherford backscattering spectroscopy and nuclear reaction analysis

  Yanwen Zhang;William J. Weber;Weilin Jiang;Anders Hallen

  107
  Citations

• Bandgap widening in thermochromic Mg-doped VO2 thin films: Quantitative data based on optical absorption

  Shu-Yi Li;Nuru R. Mlyuka;Daniel Primetzhofer;Anders Hallén

  99
  Citations

• Formation of a double acceptor center during divacancy annealing in low-doped high-purity oxygenated Si

  Unknown

  91
  Citations

• Nitrogen deactivation by implantation-induced defects in 4H-SiC epitaxial layers

  D. Aberg;Anders. Hallén;P. Pellegrino;B. G. Svensson

  87
  Citations

• New beam line for time-of-flight medium energy ion scattering with large area position sensitive detector.

  M. K. Linnarsson;A. Hallen;Jonas Åström;Daniel Primetzhofer

  83
  Citations

• Ion implantation of silicon carbide

  A Hallén;M.S Janson;A.Yu Kuznetsov;D Åberg

  82
  Citations

• Elimination of carbon vacancies in 4H-SiC employing thermodynamic equilibrium conditions at moderate temperatures

  H. M. Ayedh;R. Nipoti;Anders Hallén;B. G. Svensson

  82
  Citations

• Defect energy levels in hydrogen-implanted and electron-irradiated n-type 4H silicon carbide

  G. Alfieri;E. V. Monakhov;B. G. Svensson;Anders. Hallén

  81
  Citations

• Deep level transient spectroscopy analysis of fast ion tracks in silicon

  Unknown

  81
  Citations

• Formation of carbon vacancy in 4H silicon carbide during high-temperature processing

  Hussein Mohammed Hussein Ayedh;Viktor Bobal;R Nipoti;Anders Hallen

  80
  Citations

• The influence of ion flux on defect production in MeV proton‐irradiated silicon

  A. Hallén;D. Fenyö;B. U. R. Sundqvist;R. E. Johnson

  78
  Citations

• Hydrogen diffusion, complex formation, and dissociation in acceptor-doped silicon carbide

  Unknown

  76
  Citations