Anders Hallén

Anders Hallén publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Anders Hallén sits on this spectrum.

Anders Hallén D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Anders Hallén sits on this spectrum.

Best Publications

• Divacancy acceptor levels in ion-irradiated silicon.

  Unknown

  245
  Citations

• Lifetime in proton irradiated silicon

  Unknown

  228
  Citations

• GENERATION OF VACANCY-TYPE POINT DEFECTS IN SINGLE COLLISION CASCADES DURING SWIFT-ION BOMBARDMENT OF SILICON

  B. G. Svensson;C. Jagadish;A. Hallén;J. Lalita

  124
  Citations

• Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon

  P Pellegrino;P Leveque;J Lalita;A Hallen

  124
  Citations

• Pseudodonor nature of the DI defect in 4H-SiC

  L. Storasta;F. H. C. Carlsson;S. G. Sridhara;J. P. Bergman

  124
  Citations

• Effects of implantation temperature on damage accumulation in Al-implanted 4H-SiC

  Yanwen Zhang;William J. Weber;Weilin Jiang;Chong M. Wang

  118
  Citations

• Helium entrapment in a nanostructured ferritic alloy

  Philip D Edmondson;Chad M Parish;Yanwen Zhang;Anders Hallen

  112
  Citations

• Electrically active defects in irradiated 4H-SiC

  M. L. David;G. Alfieri;E. M. Monakhov;Anders. Hallén

  108
  Citations

• Damage evolution and recovery on both Si and C sublattices in Al-implanted 4H–SiC studied by Rutherford backscattering spectroscopy and nuclear reaction analysis

  Yanwen Zhang;William J. Weber;Weilin Jiang;Anders Hallen

  107
  Citations

• Bandgap widening in thermochromic Mg-doped VO2 thin films: Quantitative data based on optical absorption

  Shu-Yi Li;Nuru R. Mlyuka;Daniel Primetzhofer;Anders Hallén

  99
  Citations

• Formation of a double acceptor center during divacancy annealing in low-doped high-purity oxygenated Si

  Unknown

  91
  Citations

• Nitrogen deactivation by implantation-induced defects in 4H-SiC epitaxial layers

  D. Aberg;Anders. Hallén;P. Pellegrino;B. G. Svensson

  87
  Citations

• New beam line for time-of-flight medium energy ion scattering with large area position sensitive detector.

  M. K. Linnarsson;A. Hallen;Jonas Åström;Daniel Primetzhofer

  83
  Citations

• Ion implantation of silicon carbide

  A Hallén;M.S Janson;A.Yu Kuznetsov;D Åberg

  82
  Citations

• Elimination of carbon vacancies in 4H-SiC employing thermodynamic equilibrium conditions at moderate temperatures

  H. M. Ayedh;R. Nipoti;Anders Hallén;B. G. Svensson

  82
  Citations

• Defect energy levels in hydrogen-implanted and electron-irradiated n-type 4H silicon carbide

  G. Alfieri;E. V. Monakhov;B. G. Svensson;Anders. Hallén

  81
  Citations

• Deep level transient spectroscopy analysis of fast ion tracks in silicon

  Unknown

  81
  Citations

• Formation of carbon vacancy in 4H silicon carbide during high-temperature processing

  Hussein Mohammed Hussein Ayedh;Viktor Bobal;R Nipoti;Anders Hallen

  80
  Citations

• The influence of ion flux on defect production in MeV proton‐irradiated silicon

  A. Hallén;D. Fenyö;B. U. R. Sundqvist;R. E. Johnson

  78
  Citations

• Hydrogen diffusion, complex formation, and dissociation in acceptor-doped silicon carbide

  Unknown

  76
  Citations