World's Best Scientists 2026 revealed!
Tsunenobu Kimoto

Tsunenobu Kimoto

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Electronics and Electrical Engineering
Japan
2026

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
81
Citations
24967
World Ranking
497
National Ranking
10

Materials Science

D-Index
81
Citations
25080
World Ranking
2573
National Ranking
113

Tsunenobu Kimoto publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Tsunenobu Kimoto sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 811 publications — 96th percentile

96% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Tsunenobu Kimoto D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Tsunenobu Kimoto sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 81 D-Index — 93rd percentile

93% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2026 - Research.com Electronics and Electrical Engineering in Japan Leader Award

Overview

Tsunenobu Kimoto is affiliated with Kyoto University in Japan and has made significant contributions to the field of engineering, particularly specializing in electrical and electronic engineering. Their body of work includes extensive research and publications focused on silicon carbide semiconductor technologies.

The domains of study that Kimoto has contributed to include:

  • Engineering
  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics

Kimoto's research topics encompass a range of subjects within semiconductor technologies and applications. Key topics of their work are:

  • Silicon Carbide Semiconductor Technologies
  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and interfaces
  • Electromagnetic Compatibility and Noise Suppression
  • Silicon and Solar Cell Technologies
  • Copper Interconnects and Reliability

Their publication record includes articles in multiple frequent venues, illustrating a consistent contribution to several journals in applied physics and electronics. These venues are:

  • Applied Physics Express
  • Japanese Journal of Applied Physics
  • Journal of Applied Physics
  • IEEE Transactions on Electron Devices
  • Applied Physics Letters

Among the recent papers authored by Kimoto, the following are notable:

  • Defect engineering in SiC technology for high-voltage power devices, 2020, Applied Physics Express
  • High-voltage SiC power devices for improved energy efficiency, 2022, Proceedings of the Japan Academy Series B

Alongside these, co-authors frequently associated with Kimoto include:

  • Mitsuaki Kaneko
  • Hajime Tanaka
  • Keita Tachiki
  • Kōji Itō
  • Masahiro Hara

Kimoto's research covers intricate aspects of semiconductor device engineering, often focusing on silicon carbide as a material for power electronics. Publications such as "Defect engineering in SiC technology for high-voltage power devices" and "High-voltage SiC power devices for improved energy efficiency" highlight their interest in improving device performance through material and interface engineering.

Best Publications

  • Material science and device physics in SiC technology for high-voltage power devices

    Tsunenobu Kimoto

  • Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications

    Tsunenobu Kimoto;James A. Cooper

  • Step-controlled epitaxial growth of SiC: High quality homoepitaxy

    Hiroyuki Matsunami;Tsunenobu Kimoto

  • Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy

    T. Dalibor;G. Pensl;H. Matsunami;T. Kimoto

  • Power Conversion With SiC Devices at Extremely High Ambient Temperatures

    T. Funaki;J.C. Balda;J. Junghans;A.S. Kashyap

  • Negative-U System of Carbon Vacancy in 4H-SiC

    NT Son;X T Trinh;Lars Sundnes Løvlie;Bengt Gunnar Svensson

  • Defect engineering in SiC technology for high-voltage power devices

    Tsunenobu Kimoto;Heiji Watanabe

  • High performance of high-voltage 4H-SiC Schottky barrier diodes

    A. Itoh;T. Kimoto;H. Matsunami

  • Performance limiting surface defects in SiC epitaxial p-n junction diodes

    T. Kimoto;N. Miyamoto;H. Matsunami

  • Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation

    Katsunori Danno;Daisuke Nakamura;Tsunenobu Kimoto

  • Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation

    Toru Hiyoshi;Tsunenobu Kimoto

  • High channel mobility in inversion layers of 4H-SiC MOSFETs by utilizing (112~0) face

    H. Yano;T. Hirao;T. Kimoto;H. Matsunami

  • Growth mechanism of 6H-SiC in step-controlled epitaxy

    Tsunenobu Kimoto;Hironori Nishino;Woo Sik Yoo;Hiroyuki Matsunami

  • Interface Properties of Metal–Oxide–Semiconductor Structures on 4H-SiC{0001} and (1120) Formed by N2O Oxidation

    Tsunenobu Kimoto;Yosuke Kanzaki;Masato Noborio;Hiroaki Kawano

  • Surface kinetics of adatoms in vapor phase epitaxial growth of SiC on 6H‐SiC{0001} vicinal surfaces

    Tsunenobu Kimoto;Hiroyuki Matsunami

  • Investigation of deep levels in n-type 4H-SiC epilayers irradiated with low-energy electrons

    Katsunori Danno;Tsunenobu Kimoto

  • Step bunching mechanism in chemical vapor deposition of 6H– and 4H–SiC{0001}

    Tsunenobu Kimoto;Akira Itoh;Hiroyuki Matsunami;Tetsuyuki Okano

  • Step‐Controlled Epitaxial Growth of High‐Quality SiC Layers

    T. Kimoto;A. Itoh;H. Matsunami

  • Generation of very fast states by nitridation of the SiO[2]/SiC interface

    Hironori Yoshioka;Takashi Nakamura;Tsunenobu Kimoto

  • Electronic behaviors of high-dose phosphorus-ion implanted 4H-SiC(0001)

    Y. Negoro;K. Katsumoto;T. Kimoto;H. Matsunami

  • Excellent reverse blocking characteristics of high-voltage 4H-SiC Schottky rectifiers with boron-implanted edge termination

    A. Itoh;T. Kimoto;H. Matsunami

Frequent Co-Authors

Jun Suda
Jun Suda Nagoya University
Hiroyuki Matsunami
Hiroyuki Matsunami Kyoto University
Gerhard Pensl
Gerhard Pensl University of Erlangen-Nuremberg
Wolfgang J. Choyke
Wolfgang J. Choyke University of Pittsburgh
Hajime Okumura
Hajime Okumura National Institute of Advanced Industrial Science and Technology
Takashi Hikihara
Takashi Hikihara Kyoto University
Takeshi Ohshima
Takeshi Ohshima Japan Atomic Energy Agency
Masashi Kato
Masashi Kato Nagoya University
Erik Janzén
Erik Janzén Linköping University
Adam Gali
Adam Gali Budapest University of Technology and Economics

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