H-Index & Metrics Best Publications

H-Index & Metrics

Discipline name H-index Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 49 Citations 9,784 302 World Ranking 1214 National Ranking 47
Materials Science D-index 65 Citations 15,313 525 World Ranking 2419 National Ranking 124

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Thermodynamics
  • Optoelectronics

His primary areas of investigation include Optoelectronics, Wide-bandgap semiconductor, Analytical chemistry, Epitaxy and Silicon carbide. His studies deal with areas such as Breakdown voltage and Voltage as well as Optoelectronics. He has researched Wide-bandgap semiconductor in several fields, including Molecular physics, Electron mobility, Edge and Carrier lifetime.

His Analytical chemistry research incorporates elements of Annealing, Ion implantation, Transmission electron microscopy, Electron beam processing and Substrate. The concepts of his Epitaxy study are interwoven with issues in Crystallography, Chemical vapor deposition and Hall effect. His Silicon carbide study integrates concerns from other disciplines, such as Electronic engineering, Semiconductor device and Power MOSFET.

His most cited work include:

  • Material science and device physics in SiC technology for high-voltage power devices (455 citations)
  • Step-controlled epitaxial growth of SiC: High quality homoepitaxy (435 citations)
  • Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy (334 citations)

What are the main themes of his work throughout his whole career to date?

His main research concerns Optoelectronics, Analytical chemistry, Epitaxy, Silicon carbide and Doping. His study explores the link between Optoelectronics and topics such as MOSFET that cross with problems in Threshold voltage. His biological study spans a wide range of topics, including Deep-level transient spectroscopy, Annealing, Oxide and Ion implantation.

The various areas that Tsunenobu Kimoto examines in his Epitaxy study include Crystallography, Substrate and Chemical vapor deposition. The study incorporates disciplines such as Mineralogy and Growth rate in addition to Chemical vapor deposition. His work deals with themes such as Transistor and Electronic engineering, which intersect with Silicon carbide.

He most often published in these fields:

  • Optoelectronics (45.41%)
  • Analytical chemistry (25.00%)
  • Epitaxy (18.92%)

What were the highlights of his more recent work (between 2016-2021)?

  • Optoelectronics (45.41%)
  • Silicon carbide (16.62%)
  • Diode (11.08%)

In recent papers he was focusing on the following fields of study:

Tsunenobu Kimoto mainly focuses on Optoelectronics, Silicon carbide, Diode, Condensed matter physics and Analytical chemistry. Tsunenobu Kimoto has researched Optoelectronics in several fields, including Ion implantation and Transistor, MOSFET. In his research on the topic of Silicon carbide, Threshold voltage is strongly related with Logic gate.

His Diode research is multidisciplinary, relying on both Depletion region, Avalanche breakdown, Photocurrent, Molecular physics and p–n junction. His Condensed matter physics study combines topics from a wide range of disciplines, such as Crystallography and Nanowire. His Analytical chemistry research is multidisciplinary, incorporating perspectives in Oxide, Conduction band and Epitaxy.

Between 2016 and 2021, his most popular works were:

  • Current status and perspectives of ultrahigh-voltage SiC power devices (40 citations)
  • Carbon ejection from a SiO2/SiC(0001) interface by annealing in high-purity Ar (26 citations)
  • Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations (25 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Thermodynamics
  • Transistor

His primary areas of study are Optoelectronics, Diode, Silicon carbide, Condensed matter physics and Doping. His research in Optoelectronics intersects with topics in Reliability, Breakdown voltage, Epitaxy and Leakage. His Diode research includes themes of Impact ionization, Depletion region, Photocurrent, Molecular physics and p–n junction.

His Silicon carbide study combines topics in areas such as Schottky diode and Field-effect transistor, Transistor, MOSFET, Voltage. His research integrates issues of Acceptor and Analytical chemistry in his study of Doping. His work carried out in the field of Analytical chemistry brings together such families of science as Conduction band, Aluminium and Dopant.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Material science and device physics in SiC technology for high-voltage power devices

Tsunenobu Kimoto.
Japanese Journal of Applied Physics (2015)

692 Citations

Step-controlled epitaxial growth of SiC: High quality homoepitaxy

Hiroyuki Matsunami;Tsunenobu Kimoto.
Materials Science & Engineering R-reports (1997)

676 Citations

Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy

T. Dalibor;G. Pensl;H. Matsunami;T. Kimoto.
Physica Status Solidi (a) (1997)

512 Citations

Power Conversion With SiC Devices at Extremely High Ambient Temperatures

T. Funaki;J.C. Balda;J. Junghans;A.S. Kashyap.
IEEE Transactions on Power Electronics (2007)

344 Citations

Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications

Tsunenobu Kimoto;James A. Cooper.
(2014)

307 Citations

High performance of high-voltage 4H-SiC Schottky barrier diodes

A. Itoh;T. Kimoto;H. Matsunami.
IEEE Electron Device Letters (1995)

274 Citations

High channel mobility in inversion layers of 4H-SiC MOSFETs by utilizing (112~0) face

H. Yano;T. Hirao;T. Kimoto;H. Matsunami.
IEEE Electron Device Letters (1999)

273 Citations

Performance limiting surface defects in SiC epitaxial p-n junction diodes

T. Kimoto;N. Miyamoto;H. Matsunami.
IEEE Transactions on Electron Devices (1999)

265 Citations

Interface Properties of Metal–Oxide–Semiconductor Structures on 4H-SiC{0001} and (1120) Formed by N2O Oxidation

Tsunenobu Kimoto;Yosuke Kanzaki;Masato Noborio;Hiroaki Kawano.
Japanese Journal of Applied Physics (2005)

255 Citations

Excellent reverse blocking characteristics of high-voltage 4H-SiC Schottky rectifiers with boron-implanted edge termination

A. Itoh;T. Kimoto;H. Matsunami.
IEEE Electron Device Letters (1996)

238 Citations

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