D-Index & Metrics Best Publications
Electronics and Electrical Engineering
Japan
2023

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 67 Citations 15,512 599 World Ranking 629 National Ranking 17
Materials Science D-index 72 Citations 19,347 767 World Ranking 2225 National Ranking 106

Research.com Recognitions

Awards & Achievements

2023 - Research.com Electronics and Electrical Engineering in Japan Leader Award

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Thermodynamics
  • Optoelectronics

His primary areas of investigation include Optoelectronics, Wide-bandgap semiconductor, Analytical chemistry, Epitaxy and Silicon carbide. His studies deal with areas such as Breakdown voltage and Voltage as well as Optoelectronics. He has researched Wide-bandgap semiconductor in several fields, including Molecular physics, Electron mobility, Edge and Carrier lifetime.

His Analytical chemistry research incorporates elements of Annealing, Ion implantation, Transmission electron microscopy, Electron beam processing and Substrate. The concepts of his Epitaxy study are interwoven with issues in Crystallography, Chemical vapor deposition and Hall effect. His Silicon carbide study integrates concerns from other disciplines, such as Electronic engineering, Semiconductor device and Power MOSFET.

His most cited work include:

  • Material science and device physics in SiC technology for high-voltage power devices (455 citations)
  • Step-controlled epitaxial growth of SiC: High quality homoepitaxy (435 citations)
  • Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy (334 citations)

What are the main themes of his work throughout his whole career to date?

His main research concerns Optoelectronics, Analytical chemistry, Epitaxy, Silicon carbide and Doping. His study explores the link between Optoelectronics and topics such as MOSFET that cross with problems in Threshold voltage. His biological study spans a wide range of topics, including Deep-level transient spectroscopy, Annealing, Oxide and Ion implantation.

The various areas that Tsunenobu Kimoto examines in his Epitaxy study include Crystallography, Substrate and Chemical vapor deposition. The study incorporates disciplines such as Mineralogy and Growth rate in addition to Chemical vapor deposition. His work deals with themes such as Transistor and Electronic engineering, which intersect with Silicon carbide.

He most often published in these fields:

  • Optoelectronics (45.41%)
  • Analytical chemistry (25.00%)
  • Epitaxy (18.92%)

What were the highlights of his more recent work (between 2016-2021)?

  • Optoelectronics (45.41%)
  • Silicon carbide (16.62%)
  • Diode (11.08%)

In recent papers he was focusing on the following fields of study:

Tsunenobu Kimoto mainly focuses on Optoelectronics, Silicon carbide, Diode, Condensed matter physics and Analytical chemistry. Tsunenobu Kimoto has researched Optoelectronics in several fields, including Ion implantation and Transistor, MOSFET. In his research on the topic of Silicon carbide, Threshold voltage is strongly related with Logic gate.

His Diode research is multidisciplinary, relying on both Depletion region, Avalanche breakdown, Photocurrent, Molecular physics and p–n junction. His Condensed matter physics study combines topics from a wide range of disciplines, such as Crystallography and Nanowire. His Analytical chemistry research is multidisciplinary, incorporating perspectives in Oxide, Conduction band and Epitaxy.

Between 2016 and 2021, his most popular works were:

  • Current status and perspectives of ultrahigh-voltage SiC power devices (40 citations)
  • Carbon ejection from a SiO2/SiC(0001) interface by annealing in high-purity Ar (26 citations)
  • Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations (25 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Thermodynamics
  • Transistor

His primary areas of study are Optoelectronics, Diode, Silicon carbide, Condensed matter physics and Doping. His research in Optoelectronics intersects with topics in Reliability, Breakdown voltage, Epitaxy and Leakage. His Diode research includes themes of Impact ionization, Depletion region, Photocurrent, Molecular physics and p–n junction.

His Silicon carbide study combines topics in areas such as Schottky diode and Field-effect transistor, Transistor, MOSFET, Voltage. His research integrates issues of Acceptor and Analytical chemistry in his study of Doping. His work carried out in the field of Analytical chemistry brings together such families of science as Conduction band, Aluminium and Dopant.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications

Tsunenobu Kimoto;James A. Cooper.
(2014)

947 Citations

Material science and device physics in SiC technology for high-voltage power devices

Tsunenobu Kimoto.
Japanese Journal of Applied Physics (2015)

744 Citations

Step-controlled epitaxial growth of SiC: High quality homoepitaxy

Hiroyuki Matsunami;Tsunenobu Kimoto.
Materials Science & Engineering R-reports (1997)

716 Citations

Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy

T. Dalibor;G. Pensl;H. Matsunami;T. Kimoto.
Physica Status Solidi (a) (1997)

493 Citations

Power Conversion With SiC Devices at Extremely High Ambient Temperatures

T. Funaki;J.C. Balda;J. Junghans;A.S. Kashyap.
IEEE Transactions on Power Electronics (2007)

356 Citations

Performance limiting surface defects in SiC epitaxial p-n junction diodes

T. Kimoto;N. Miyamoto;H. Matsunami.
IEEE Transactions on Electron Devices (1999)

278 Citations

High performance of high-voltage 4H-SiC Schottky barrier diodes

A. Itoh;T. Kimoto;H. Matsunami.
IEEE Electron Device Letters (1995)

271 Citations

Negative-U System of Carbon Vacancy in 4H-SiC

NT Son;X T Trinh;Lars Sundnes Løvlie;Bengt Gunnar Svensson.
Physical Review Letters (2012)

270 Citations

Growth mechanism of 6H-SiC in step-controlled epitaxy

Tsunenobu Kimoto;Hironori Nishino;Woo Sik Yoo;Hiroyuki Matsunami.
Journal of Applied Physics (1993)

249 Citations

High channel mobility in inversion layers of 4H-SiC MOSFETs by utilizing (112~0) face

H. Yano;T. Hirao;T. Kimoto;H. Matsunami.
IEEE Electron Device Letters (1999)

248 Citations

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