2023 - Research.com Electronics and Electrical Engineering in Japan Leader Award
His primary areas of investigation include Optoelectronics, Wide-bandgap semiconductor, Analytical chemistry, Epitaxy and Silicon carbide. His studies deal with areas such as Breakdown voltage and Voltage as well as Optoelectronics. He has researched Wide-bandgap semiconductor in several fields, including Molecular physics, Electron mobility, Edge and Carrier lifetime.
His Analytical chemistry research incorporates elements of Annealing, Ion implantation, Transmission electron microscopy, Electron beam processing and Substrate. The concepts of his Epitaxy study are interwoven with issues in Crystallography, Chemical vapor deposition and Hall effect. His Silicon carbide study integrates concerns from other disciplines, such as Electronic engineering, Semiconductor device and Power MOSFET.
His main research concerns Optoelectronics, Analytical chemistry, Epitaxy, Silicon carbide and Doping. His study explores the link between Optoelectronics and topics such as MOSFET that cross with problems in Threshold voltage. His biological study spans a wide range of topics, including Deep-level transient spectroscopy, Annealing, Oxide and Ion implantation.
The various areas that Tsunenobu Kimoto examines in his Epitaxy study include Crystallography, Substrate and Chemical vapor deposition. The study incorporates disciplines such as Mineralogy and Growth rate in addition to Chemical vapor deposition. His work deals with themes such as Transistor and Electronic engineering, which intersect with Silicon carbide.
Tsunenobu Kimoto mainly focuses on Optoelectronics, Silicon carbide, Diode, Condensed matter physics and Analytical chemistry. Tsunenobu Kimoto has researched Optoelectronics in several fields, including Ion implantation and Transistor, MOSFET. In his research on the topic of Silicon carbide, Threshold voltage is strongly related with Logic gate.
His Diode research is multidisciplinary, relying on both Depletion region, Avalanche breakdown, Photocurrent, Molecular physics and p–n junction. His Condensed matter physics study combines topics from a wide range of disciplines, such as Crystallography and Nanowire. His Analytical chemistry research is multidisciplinary, incorporating perspectives in Oxide, Conduction band and Epitaxy.
His primary areas of study are Optoelectronics, Diode, Silicon carbide, Condensed matter physics and Doping. His research in Optoelectronics intersects with topics in Reliability, Breakdown voltage, Epitaxy and Leakage. His Diode research includes themes of Impact ionization, Depletion region, Photocurrent, Molecular physics and p–n junction.
His Silicon carbide study combines topics in areas such as Schottky diode and Field-effect transistor, Transistor, MOSFET, Voltage. His research integrates issues of Acceptor and Analytical chemistry in his study of Doping. His work carried out in the field of Analytical chemistry brings together such families of science as Conduction band, Aluminium and Dopant.
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Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications
Tsunenobu Kimoto;James A. Cooper.
Material science and device physics in SiC technology for high-voltage power devices
Japanese Journal of Applied Physics (2015)
Step-controlled epitaxial growth of SiC: High quality homoepitaxy
Hiroyuki Matsunami;Tsunenobu Kimoto.
Materials Science & Engineering R-reports (1997)
Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy
T. Dalibor;G. Pensl;H. Matsunami;T. Kimoto.
Physica Status Solidi (a) (1997)
Power Conversion With SiC Devices at Extremely High Ambient Temperatures
T. Funaki;J.C. Balda;J. Junghans;A.S. Kashyap.
IEEE Transactions on Power Electronics (2007)
Performance limiting surface defects in SiC epitaxial p-n junction diodes
T. Kimoto;N. Miyamoto;H. Matsunami.
IEEE Transactions on Electron Devices (1999)
High performance of high-voltage 4H-SiC Schottky barrier diodes
A. Itoh;T. Kimoto;H. Matsunami.
IEEE Electron Device Letters (1995)
Negative-U System of Carbon Vacancy in 4H-SiC
NT Son;X T Trinh;Lars Sundnes Løvlie;Bengt Gunnar Svensson.
Physical Review Letters (2012)
Growth mechanism of 6H-SiC in step-controlled epitaxy
Tsunenobu Kimoto;Hironori Nishino;Woo Sik Yoo;Hiroyuki Matsunami.
Journal of Applied Physics (1993)
High channel mobility in inversion layers of 4H-SiC MOSFETs by utilizing (112~0) face
H. Yano;T. Hirao;T. Kimoto;H. Matsunami.
IEEE Electron Device Letters (1999)
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