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Tsunenobu Kimoto

Tsunenobu Kimoto

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Electronics and Electrical Engineering
Japan
2026

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
81
Citations
24967
World Ranking
497
National Ranking
10

Materials Science

D-Index
81
Citations
25080
World Ranking
2575
National Ranking
113

Research.com Recognitions

  • 2026 - Research.com Electronics and Electrical Engineering in Japan Leader Award

Overview

Tsunenobu Kimoto is affiliated with Kyoto University in Japan and has made significant contributions to the field of engineering, particularly specializing in electrical and electronic engineering. Their body of work includes extensive research and publications focused on silicon carbide semiconductor technologies.

The domains of study that Kimoto has contributed to include:

  • Engineering
  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics

Kimoto's research topics encompass a range of subjects within semiconductor technologies and applications. Key topics of their work are:

  • Silicon Carbide Semiconductor Technologies
  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and interfaces
  • Electromagnetic Compatibility and Noise Suppression
  • Silicon and Solar Cell Technologies
  • Copper Interconnects and Reliability

Their publication record includes articles in multiple frequent venues, illustrating a consistent contribution to several journals in applied physics and electronics. These venues are:

  • Applied Physics Express
  • Japanese Journal of Applied Physics
  • Journal of Applied Physics
  • IEEE Transactions on Electron Devices
  • Applied Physics Letters

Among the recent papers authored by Kimoto, the following are notable:

  • Defect engineering in SiC technology for high-voltage power devices, 2020, Applied Physics Express
  • High-voltage SiC power devices for improved energy efficiency, 2022, Proceedings of the Japan Academy Series B

Alongside these, co-authors frequently associated with Kimoto include:

  • Mitsuaki Kaneko
  • Hajime Tanaka
  • Keita Tachiki
  • Kōji Itō
  • Masahiro Hara

Kimoto's research covers intricate aspects of semiconductor device engineering, often focusing on silicon carbide as a material for power electronics. Publications such as "Defect engineering in SiC technology for high-voltage power devices" and "High-voltage SiC power devices for improved energy efficiency" highlight their interest in improving device performance through material and interface engineering.

Best Publications

  • Material science and device physics in SiC technology for high-voltage power devices

    Tsunenobu Kimoto

  • Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications

    Tsunenobu Kimoto;James A. Cooper

  • Step-controlled epitaxial growth of SiC: High quality homoepitaxy

    Hiroyuki Matsunami;Tsunenobu Kimoto

  • Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy

    T. Dalibor;G. Pensl;H. Matsunami;T. Kimoto

  • Power Conversion With SiC Devices at Extremely High Ambient Temperatures

    T. Funaki;J.C. Balda;J. Junghans;A.S. Kashyap

  • Negative-U System of Carbon Vacancy in 4H-SiC

    NT Son;X T Trinh;Lars Sundnes Løvlie;Bengt Gunnar Svensson

  • Defect engineering in SiC technology for high-voltage power devices

    Tsunenobu Kimoto;Heiji Watanabe

  • High performance of high-voltage 4H-SiC Schottky barrier diodes

    A. Itoh;T. Kimoto;H. Matsunami

  • Performance limiting surface defects in SiC epitaxial p-n junction diodes

    T. Kimoto;N. Miyamoto;H. Matsunami

  • Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation

    Katsunori Danno;Daisuke Nakamura;Tsunenobu Kimoto

  • Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation

    Toru Hiyoshi;Tsunenobu Kimoto

  • High channel mobility in inversion layers of 4H-SiC MOSFETs by utilizing (112~0) face

    H. Yano;T. Hirao;T. Kimoto;H. Matsunami

  • Growth mechanism of 6H-SiC in step-controlled epitaxy

    Tsunenobu Kimoto;Hironori Nishino;Woo Sik Yoo;Hiroyuki Matsunami

  • Interface Properties of Metal–Oxide–Semiconductor Structures on 4H-SiC{0001} and (1120) Formed by N2O Oxidation

    Tsunenobu Kimoto;Yosuke Kanzaki;Masato Noborio;Hiroaki Kawano

  • Surface kinetics of adatoms in vapor phase epitaxial growth of SiC on 6H‐SiC{0001} vicinal surfaces

    Tsunenobu Kimoto;Hiroyuki Matsunami

  • Investigation of deep levels in n-type 4H-SiC epilayers irradiated with low-energy electrons

    Katsunori Danno;Tsunenobu Kimoto

  • Step bunching mechanism in chemical vapor deposition of 6H– and 4H–SiC{0001}

    Tsunenobu Kimoto;Akira Itoh;Hiroyuki Matsunami;Tetsuyuki Okano

  • Step‐Controlled Epitaxial Growth of High‐Quality SiC Layers

    T. Kimoto;A. Itoh;H. Matsunami

  • Generation of very fast states by nitridation of the SiO[2]/SiC interface

    Hironori Yoshioka;Takashi Nakamura;Tsunenobu Kimoto

  • Electronic behaviors of high-dose phosphorus-ion implanted 4H-SiC(0001)

    Y. Negoro;K. Katsumoto;T. Kimoto;H. Matsunami

  • Excellent reverse blocking characteristics of high-voltage 4H-SiC Schottky rectifiers with boron-implanted edge termination

    A. Itoh;T. Kimoto;H. Matsunami

Frequent Co-Authors

Jun Suda
Jun Suda Nagoya University
Hiroyuki Matsunami
Hiroyuki Matsunami Kyoto University
Gerhard Pensl
Gerhard Pensl University of Erlangen-Nuremberg
Wolfgang J. Choyke
Wolfgang J. Choyke University of Pittsburgh
Hajime Okumura
Hajime Okumura National Institute of Advanced Industrial Science and Technology
Takashi Hikihara
Takashi Hikihara Kyoto University
Takeshi Ohshima
Takeshi Ohshima Japan Atomic Energy Agency
Masashi Kato
Masashi Kato Nagoya University
Erik Janzén
Erik Janzén Linköping University
Adam Gali
Adam Gali Budapest University of Technology and Economics

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