2026 Marek Skowronski: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	61	6878	6647	1731	1611	312	11275

Overview

Marek Skowronski is affiliated with Carnegie Mellon University in the United States. Their research spans multiple fields, primarily focused on engineering and materials science. Within these disciplines, their work concentrates on subfields such as electrical and electronic engineering, materials chemistry, polymers and plastics, biomedical engineering, and atomic and molecular physics.

Their major research topics include:

Advanced Memory and Neural Computing
Phase-change materials and chalcogenides
Ferroelectric and Negative Capacitance Devices
Transition Metal Oxide Nanomaterials
Semiconductor materials and devices
Chalcogenide Semiconductor Thin Films
Electronic and Structural Properties of Oxides

Skowronski's frequent publication venues reflect a focus on applied physics and materials science, with notable contributions in:

Journal of Applied Physics
ACS Applied Electronic Materials
AIP Advances
arXiv (Cornell University)
ACS Applied Materials & Interfaces

Noteworthy recent papers authored or coauthored by Skowronski include:

"Evolution of the conductive filament with cycling in TaOx-based resistive switching devices," published in 2020 in the Journal of Applied Physics
"Exchange of Ions across the TiN/TaO_x Interface during Electroformation of TaO_x-Based Resistive Switching Devices," 2020, ACS Applied Materials & Interfaces
"Electrical and Thermal Dynamics of Self-Oscillations in TaO_x-Based Threshold Switching Devices," 2020, ACS Applied Electronic Materials
"Nanoscale density variations in sputtered amorphous TaOx functional layers in resistive switching devices," 2020, Journal of Applied Physics
"Temperature Distribution in TaO_x Resistive Switching Devices Assessed In Operando by Scanning Thermal Microscopy," 2023, ACS Applied Electronic Materials

Collaboration plays a significant role in Skowronski's work, with frequent co-authors including:

Yiqi Yu
Jingjia Meng
Qiyun Xu
Yuanzhi Ma
Jonathan M. Goodwill

Their research contributions predominantly address the development and characterization of materials and devices at the nanoscale, specifically focusing on resistive switching devices and related transition metal oxide systems. Their publications often investigate physical phenomena such as conductive filament evolution, ion exchange at material interfaces, and thermal dynamics in threshold switching devices.

Best Publications

Degradation of hexagonal silicon-carbide-based bipolar devices

M. Skowronski;S. Ha

558
Citations
Determination of wurtzite GaN lattice polarity based on surface reconstruction

A. R. Smith;R. M. Feenstra;D. W. Greve;M.-S. Shin

412
Citations
Microstructural characterization of α‐GaN films grown on sapphire by organometallic vapor phase epitaxy

W. Qian;M. Skowronski;M. De Graef;K. Doverspike

394
Citations
Reconstructions of GaN(0001) and (0001̄) surfaces: Ga-rich metallic structures

A. R. Smith;R. M. Feenstra;D. W. Greve;M. S. Shin

314
Citations
Dislocation conversion in 4H silicon carbide epitaxy

S. Ha;P. Mieszkowski;M. Skowronski;L.B. Rowland

299
Citations
Open‐core screw dislocations in GaN epilayers observed by scanning force microscopy and high‐resolution transmission electron microscopy

W. Qian;G. S. Rohrer;M. Skowronski;K. Doverspike

283
Citations
Intracenter transitions in the dominant deep level (EL2) in GaAs

M. Kaminska;M. Skowronski;J. Lagowski;J. M. Parsey

264
Citations
Structure of recombination-induced stacking faults in high-voltage SiC p–n junctions

J. Q. Liu;M. Skowronski;C. Hallin;R. Söderholm

216
Citations
Lifetime-limiting defects in n− 4H-SiC epilayers

P. B. Klein;B. V. Shanabrook;S. W. Huh;A. Y. Polyakov

209
Citations
Semi‐insulating 6H–SiC grown by physical vapor transport

H. McD. Hobgood;R. C. Glass;G. Augustine;R. H. Hopkins

182
Citations
The mechanism of micropipe nucleation at inclusions in silicon carbide

M. Dudley;X. R. Huang;W. Huang;A. Powell

181
Citations
Structural instability of 4H-SiC polytype induced by n-type doping

J. Q. Liu;H. J. Chung;T. Kuhr;Q. Li

174
Citations
Identification of the 0.82-eV electron trap, EL2 in GaAs, as an isolated antisite arsenic defect.

Kaminska M;Skowronski M;Kuszko W

173
Citations
GaN(0001) surface structures studied using scanning tunneling microscopy and first-principles total energy calculations

A. R. Smith;R. M. Feenstra;D. W. Greve;M.-S. Shin

166
Citations
Spontaneous formation of stacking faults in highly doped 4H–SiC during annealing

Thomas A. Kuhr;JinQiang Liu;Hun Jae Chung;Marek Skowronski

164
Citations
Microstructure and optical properties of epitaxial GaN on ZnO (0001) grown by reactive molecular beam epitaxy

F. Hamdani;M. Yeadon;David J. Smith;H. Tang

164
Citations
Recombination-enhanced defect motion in forward-biased 4H–SiC p-n diodes

M. Skowronski;J. Q. Liu;W. M. Vetter;M. Dudley

162
Citations
Native hole trap in bulk GaAs and its association with the double‐charge state of the arsenic antisite defect

J. Lagowski;D. G. Lin;T.‐P. Chen;M. Skowronski

147
Citations
Joule Heating-Induced Metal-Insulator Transition in Epitaxial VO2/TiO2 Devices.

Dasheng Li;Abhishek A. Sharma;Darshil K. Gala;Nikhil Shukla

137
Citations
Mobility of oxygen vacancy in SrTiO3 and its implications for oxygen-migration-based resistance switching

W. Jiang;M. Noman;Y. M. Lu;J. A. Bain

133
Citations
Properties of Si donors and persistent photoconductivity in AlGaN

A.Y. Polyakov;N.B. Smirnov;A.V. Govorkov;M.G. Mil'vidskii

130
Citations
Proximity effect induced magnetism in graphene

Devashish Gopalan;Joe Seifert;Amanda Haglund;David Mandrus

0
Citations