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Marek Skowronski

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 61 6876 6644 1729 1608 312 11275

Marek Skowronski publications per year

The chart shows the history of publications by Marek Skowronski between 1963 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Marek Skowronski published across 63 years, from 1963 to 2025, averaging 5.2 papers a year. Output peaked at 38 publications in 2006. 6 of the 329 publications appeared in the last two years.

No. of publications
10 20 30
Bar chart. Horizontal axis: year, 1963 to 2025. Vertical axis: number of publications, 0 to 38. Peak 38 publications in 2006. 1963: 2 publications 1964: 1 publication 1965: 0 publications 1966: 1 publication 1967: 0 publications 1968: 0 publications 1969: 0 publications 1970: 0 publications 1971: 0 publications 1972: 0 publications 1973: 0 publications 1974: 0 publications 1975: 0 publications 1976: 0 publications 1977: 0 publications 1978: 0 publications 1979: 0 publications 1980: 0 publications 1981: 1 publication 1982: 1 publication 1983: 1 publication 1984: 3 publications 1985: 6 publications 1986: 4 publications 1987: 2 publications 1988: 1 publication 1989: 0 publications 1990: 2 publications 1991: 4 publications 1992: 3 publications 1993: 4 publications 1994: 4 publications 1995: 17 publications 1996: 13 publications 1997: 9 publications 1998: 17 publications 1999: 4 publications 2000: 9 publications 2001: 6 publications 2002: 18 publications 2003: 8 publications 2004: 13 publications 2005: 12 publications 2006: 38 publications 2007: 15 publications 2008: 11 publications 2009: 3 publications 2010: 5 publications 2011: 12 publications 2012: 4 publications 2013: 8 publications 2014: 9 publications 2015: 13 publications 2016: 7 publications 2017: 5 publications 2018: 4 publications 2019: 5 publications 2020: 6 publications 2021: 1 publication 2022: 3 publications 2023: 8 publications 2024: 4 publications 2025: 2 publications
1963 2025

329 publications in total across all disciplines

View publications per year as a table
Marek Skowronski: publications per year, 1963 to 2025
Year Publications
1963 2
1964 1
1965 0
1966 1
1967 0
1968 0
1969 0
1970 0
1971 0
1972 0
1973 0
1974 0
1975 0
1976 0
1977 0
1978 0
1979 0
1980 0
1981 1
1982 1
1983 1
1984 3
1985 6
1986 4
1987 2
1988 1
1989 0
1990 2
1991 4
1992 3
1993 4
1994 4
1995 17
1996 13
1997 9
1998 17
1999 4
2000 9
2001 6
2002 18
2003 8
2004 13
2005 12
2006 38
2007 15
2008 11
2009 3
2010 5
2011 12
2012 4
2013 8
2014 9
2015 13
2016 7
2017 5
2018 4
2019 5
2020 6
2021 1
2022 3
2023 8
2024 4
2025 2
Total 329
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Marek Skowronski publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Marek Skowronski sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 310–329 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 312 publications — 62nd percentile

62% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537 312
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
Download as CSV

Marek Skowronski D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Marek Skowronski sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 60–61 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 61 D-Index — 48th percentile

48% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587 61
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
Download as CSV

Overview

Marek Skowronski is affiliated with Carnegie Mellon University in the United States. Their research spans multiple fields, primarily focused on engineering and materials science. Within these disciplines, their work concentrates on subfields such as electrical and electronic engineering, materials chemistry, polymers and plastics, biomedical engineering, and atomic and molecular physics.

Their major research topics include:

  • Advanced Memory and Neural Computing
  • Phase-change materials and chalcogenides
  • Ferroelectric and Negative Capacitance Devices
  • Transition Metal Oxide Nanomaterials
  • Semiconductor materials and devices
  • Chalcogenide Semiconductor Thin Films
  • Electronic and Structural Properties of Oxides

Skowronski's frequent publication venues reflect a focus on applied physics and materials science, with notable contributions in:

  • Journal of Applied Physics
  • ACS Applied Electronic Materials
  • AIP Advances
  • arXiv (Cornell University)
  • ACS Applied Materials & Interfaces

Noteworthy recent papers authored or coauthored by Skowronski include:

  • "Evolution of the conductive filament with cycling in TaOx-based resistive switching devices," published in 2020 in the Journal of Applied Physics
  • "Exchange of Ions across the TiN/TaOx Interface during Electroformation of TaOx-Based Resistive Switching Devices," 2020, ACS Applied Materials & Interfaces
  • "Electrical and Thermal Dynamics of Self-Oscillations in TaOx-Based Threshold Switching Devices," 2020, ACS Applied Electronic Materials
  • "Nanoscale density variations in sputtered amorphous TaOx functional layers in resistive switching devices," 2020, Journal of Applied Physics
  • "Temperature Distribution in TaOx Resistive Switching Devices Assessed In Operando by Scanning Thermal Microscopy," 2023, ACS Applied Electronic Materials

Collaboration plays a significant role in Skowronski's work, with frequent co-authors including:

  • Yiqi Yu
  • Jingjia Meng
  • Qiyun Xu
  • Yuanzhi Ma
  • Jonathan M. Goodwill

Their research contributions predominantly address the development and characterization of materials and devices at the nanoscale, specifically focusing on resistive switching devices and related transition metal oxide systems. Their publications often investigate physical phenomena such as conductive filament evolution, ion exchange at material interfaces, and thermal dynamics in threshold switching devices.

Best Publications

  • Degradation of hexagonal silicon-carbide-based bipolar devices

    M. Skowronski;S. Ha

  • Determination of wurtzite GaN lattice polarity based on surface reconstruction

    A. R. Smith;R. M. Feenstra;D. W. Greve;M.-S. Shin

  • Microstructural characterization of α‐GaN films grown on sapphire by organometallic vapor phase epitaxy

    W. Qian;M. Skowronski;M. De Graef;K. Doverspike

  • Reconstructions of GaN(0001) and (0001̄) surfaces: Ga-rich metallic structures

    A. R. Smith;R. M. Feenstra;D. W. Greve;M. S. Shin

  • Dislocation conversion in 4H silicon carbide epitaxy

    S. Ha;P. Mieszkowski;M. Skowronski;L.B. Rowland

  • Open‐core screw dislocations in GaN epilayers observed by scanning force microscopy and high‐resolution transmission electron microscopy

    W. Qian;G. S. Rohrer;M. Skowronski;K. Doverspike

  • Intracenter transitions in the dominant deep level (EL2) in GaAs

    M. Kaminska;M. Skowronski;J. Lagowski;J. M. Parsey

  • Structure of recombination-induced stacking faults in high-voltage SiC p–n junctions

    J. Q. Liu;M. Skowronski;C. Hallin;R. Söderholm

  • Lifetime-limiting defects in n− 4H-SiC epilayers

    P. B. Klein;B. V. Shanabrook;S. W. Huh;A. Y. Polyakov

  • Semi‐insulating 6H–SiC grown by physical vapor transport

    H. McD. Hobgood;R. C. Glass;G. Augustine;R. H. Hopkins

  • The mechanism of micropipe nucleation at inclusions in silicon carbide

    M. Dudley;X. R. Huang;W. Huang;A. Powell

  • Structural instability of 4H-SiC polytype induced by n-type doping

    J. Q. Liu;H. J. Chung;T. Kuhr;Q. Li

  • Identification of the 0.82-eV electron trap, EL2 in GaAs, as an isolated antisite arsenic defect.

    Kaminska M;Skowronski M;Kuszko W

  • GaN(0001) surface structures studied using scanning tunneling microscopy and first-principles total energy calculations

    A. R. Smith;R. M. Feenstra;D. W. Greve;M.-S. Shin

  • Spontaneous formation of stacking faults in highly doped 4H–SiC during annealing

    Thomas A. Kuhr;JinQiang Liu;Hun Jae Chung;Marek Skowronski

  • Microstructure and optical properties of epitaxial GaN on ZnO (0001) grown by reactive molecular beam epitaxy

    F. Hamdani;M. Yeadon;David J. Smith;H. Tang

  • Recombination-enhanced defect motion in forward-biased 4H–SiC p-n diodes

    M. Skowronski;J. Q. Liu;W. M. Vetter;M. Dudley

  • Native hole trap in bulk GaAs and its association with the double‐charge state of the arsenic antisite defect

    J. Lagowski;D. G. Lin;T.‐P. Chen;M. Skowronski

  • Joule Heating-Induced Metal-Insulator Transition in Epitaxial VO2/TiO2 Devices.

    Dasheng Li;Abhishek A. Sharma;Darshil K. Gala;Nikhil Shukla

  • Mobility of oxygen vacancy in SrTiO3 and its implications for oxygen-migration-based resistance switching

    W. Jiang;M. Noman;Y. M. Lu;J. A. Bain

  • Properties of Si donors and persistent photoconductivity in AlGaN

    A.Y. Polyakov;N.B. Smirnov;A.V. Govorkov;M.G. Mil'vidskii

  • Proximity effect induced magnetism in graphene

    Devashish Gopalan;Joe Seifert;Amanda Haglund;David Mandrus

Frequent Co-Authors

James A. Bain
James A. Bain Carnegie Mellon University
Paul A. Salvador
Paul A. Salvador Carnegie Mellon University
Gregory S. Rohrer
Gregory S. Rohrer Carnegie Mellon University
A. Y. Polyakov
A. Y. Polyakov National University of Science and Technology
Randall M. Feenstra
Randall M. Feenstra Carnegie Mellon University
Michael Dudley
Michael Dudley Stony Brook University
Philip G. Neudeck
Philip G. Neudeck Glenn Research Center
Charles R. Eddy
Charles R. Eddy United States Naval Research Laboratory
D. Kurt Gaskill
D. Kurt Gaskill United States Naval Research Laboratory
Joan M. Redwing
Joan M. Redwing Pennsylvania State University

External Links

Personal website of Marek Skowronski Google Scholar page

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Best Scientists Citing Marek Skowronski

Stephen J. Pearton

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Tsunenobu Kimoto

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Michael Dudley

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Publications: 66

A. Y. Polyakov

A. Y. Polyakov

National University of Science and Technology

Publications: 64

Hajime Okumura

Hajime Okumura

National Institute of Advanced Industrial Science and Technology

Publications: 63

Erik Janzén

Erik Janzén

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Publications: 46

Rainer Waser

Rainer Waser

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Publications: 42

Jun Suda

Jun Suda

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Publications: 39

Robert F. Davis

Robert F. Davis

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Publications: 34

James S. Speck

James S. Speck

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Publications: 33

Randall M. Feenstra

Randall M. Feenstra

Carnegie Mellon University

Publications: 33

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Joshua D. Caldwell

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Publications: 31

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Fan Ren

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Publications: 28

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Publications: 28

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