The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Marek Skowronski sits on this spectrum.
This scientist: 312 publications — 62nd percentile
62% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,163 publications or more.
The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Marek Skowronski sits on this spectrum.
This scientist: 61 D-Index — 48th percentile
48% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 165 D-Index or more.
Marek Skowronski is affiliated with Carnegie Mellon University in the United States. Their research spans multiple fields, primarily focused on engineering and materials science. Within these disciplines, their work concentrates on subfields such as electrical and electronic engineering, materials chemistry, polymers and plastics, biomedical engineering, and atomic and molecular physics.
Their major research topics include:
Skowronski's frequent publication venues reflect a focus on applied physics and materials science, with notable contributions in:
Noteworthy recent papers authored or coauthored by Skowronski include:
Collaboration plays a significant role in Skowronski's work, with frequent co-authors including:
Their research contributions predominantly address the development and characterization of materials and devices at the nanoscale, specifically focusing on resistive switching devices and related transition metal oxide systems. Their publications often investigate physical phenomena such as conductive filament evolution, ion exchange at material interfaces, and thermal dynamics in threshold switching devices.
M. Skowronski;S. Ha
A. R. Smith;R. M. Feenstra;D. W. Greve;M.-S. Shin
W. Qian;M. Skowronski;M. De Graef;K. Doverspike
A. R. Smith;R. M. Feenstra;D. W. Greve;M. S. Shin
S. Ha;P. Mieszkowski;M. Skowronski;L.B. Rowland
W. Qian;G. S. Rohrer;M. Skowronski;K. Doverspike
M. Kaminska;M. Skowronski;J. Lagowski;J. M. Parsey
J. Q. Liu;M. Skowronski;C. Hallin;R. Söderholm
P. B. Klein;B. V. Shanabrook;S. W. Huh;A. Y. Polyakov
H. McD. Hobgood;R. C. Glass;G. Augustine;R. H. Hopkins
M. Dudley;X. R. Huang;W. Huang;A. Powell
J. Q. Liu;H. J. Chung;T. Kuhr;Q. Li
Kaminska M;Skowronski M;Kuszko W
A. R. Smith;R. M. Feenstra;D. W. Greve;M.-S. Shin
Thomas A. Kuhr;JinQiang Liu;Hun Jae Chung;Marek Skowronski
F. Hamdani;M. Yeadon;David J. Smith;H. Tang
M. Skowronski;J. Q. Liu;W. M. Vetter;M. Dudley
J. Lagowski;D. G. Lin;T.‐P. Chen;M. Skowronski
Dasheng Li;Abhishek A. Sharma;Darshil K. Gala;Nikhil Shukla
W. Jiang;M. Noman;Y. M. Lu;J. A. Bain
A.Y. Polyakov;N.B. Smirnov;A.V. Govorkov;M.G. Mil'vidskii
Devashish Gopalan;Joe Seifert;Amanda Haglund;David Mandrus
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