John E. Northrup

Research.com Recognitions

• 2012 - Fellow of the Materials Research Society a Xerox company

Overview

Best Publications

• Chemical potential dependence of defect formation energies in GaAs : application to Ga self-diffusion

  S. B. Zhang;John E. Northrup

  1964
  Citations

• Surface reconstructions of GaAs(100) observed by scanning tunneling microscopy.

  D. K. Biegelsen;R. D. Bringans;J. E. Northrup;L.-E. Swartz

  862
  Citations

• Large modulation of carrier transport by grain-boundary molecular packing and microstructure in organic thin films

  Jonathan Rivnay;Leslie H. Jimison;John E. Northrup;Michael F. Toney

  551
  Citations

• Reconstructions of the GaN\(0001̄\) Surface

  A. R. Smith;R. M. Feenstra;D. W. Greve;Jörg Neugebauer

  460
  Citations

• Structure of GaN(0001): The laterally contracted Ga bilayer model

  John E. Northrup;J. Neugebauer;R. M. Feenstra;A. R. Smith

  436
  Citations

• Transport in polycrystalline polymer thin-film transistors

  R. A. Street;J. E. Northrup;A. Salleo

  413
  Citations

• Determination of wurtzite GaN lattice polarity based on surface reconstruction

  A. R. Smith;R. M. Feenstra;D. W. Greve;M.-S. Shin

  412
  Citations

• Theory of GaN ( 10 1 ¯ 0 ) and ( 11 2 ¯ 0 ) surfaces

  John E. Northrup;J. Neugebauer

  397
  Citations

• Adatom kinetics on and below the surface: The existence of a new diffusion channel

  Jörg Neugebauer;Tosja K. Zywietz;Matthias Scheffler;John E. Northrup

  391
  Citations

• Ab initio calculation of the electronic and optical properties of solid pentacene

  Murilo L. Tiago;John E. Northrup;Steven G. Louie

  382
  Citations

• Reconstructions of GaAs(1-bar 1-bar 1-bar) surfaces observed by scanning tunneling microscopy.

  D. K. Biegelsen;R. D. Bringans;J. E. Northrup;L.-E. Swartz

  354
  Citations

• High Carrier Mobility Polythiophene Thin Films: Structure Determination by Experiment and Theory†

  Dean M. DeLongchamp;Regis J. Kline;Eric K. Lin;Daniel A. Fischer

  348
  Citations

• Structure of Si(100)H: Dependence on the H chemical potential.

  John E. Northrup

  337
  Citations

• Dopant and defect energetics: Si in GaAs.

  John E. Northrup;S. B. Zhang

  333
  Citations

• Inversion Domain and Stacking Mismatch Boundaries in GaN.

  John E. Northrup;Jörg Neugebauer;L. T. Romano

  330
  Citations

• Structure of GaAs(001) surfaces: The role of electrostatic interactions.

  John E. Northrup;Sverre Froyen

  316
  Citations

• Reconstructions of GaN(0001) and (0001̄) surfaces: Ga-rich metallic structures

  A. R. Smith;R. M. Feenstra;D. W. Greve;M. S. Shin

  314
  Citations

• Surface energetics, pit formation, and chemical ordering in InGaN alloys

  J. E. Northrup;L. T. Romano;Jörg Neugebauer

  312
  Citations

• Origin of surface states on Si(111)(7×7)

  John E. Northrup

  297
  Citations

• Inversion of wurtzite GaN(0001) by exposure to magnesium

  V. Ramachandran;R. M. Feenstra;W. L. Sarney;L. Salamanca-Riba

  285
  Citations

• Erratum: Surface reconstructions of GaAs(100) observed by scanning tunneling microscopy [Phys. Rev. B 41, 5701 (1990)]

  D. K. Biegelsen;R. D. Bringans;J. E. Northrup;L. E. Swartz

  5
  Citations