D-Index & Metrics Best Publications
Materials Science
Poland
2022

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 58 Citations 10,765 305 World Ranking 4868 National Ranking 11

Research.com Recognitions

Awards & Achievements

2022 - Research.com Materials Science in Poland Leader Award

2013 - Prize of the Foundation for Polish Science - Nagroda Fundacji na rzecz Nauki Polskiej for developing a high-pressure method for producing gallium nitride monocrystals

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Photon
  • Atom

Sylwester Porowski focuses on Optoelectronics, Epitaxy, Analytical chemistry, Crystallography and Gallium nitride. His work deals with themes such as Exciton and Laser, which intersect with Optoelectronics. His biological study spans a wide range of topics, including Crystal growth, Photoluminescence and Thin film.

His Analytical chemistry research integrates issues from Sapphire, Metalorganic vapour phase epitaxy, Doping and Gallium. His study looks at the relationship between Crystallography and fields such as Transmission electron microscopy, as well as how they intersect with chemical problems. Sylwester Porowski combines subjects such as Indentation, Diamond, Lattice constant, Brittleness and Wurtzite crystal structure with his study of Gallium nitride.

His most cited work include:

  • Observation of Native Ga Vacancies in GaN by Positron Annihilation (380 citations)
  • Lattice parameters of gallium nitride (309 citations)
  • Towards the identification of the dominant donor in GaN. (235 citations)

What are the main themes of his work throughout his whole career to date?

His scientific interests lie mostly in Optoelectronics, Condensed matter physics, Epitaxy, Gallium nitride and Analytical chemistry. His work carried out in the field of Optoelectronics brings together such families of science as Molecular beam epitaxy, Laser and Nitride. His work in Condensed matter physics tackles topics such as Photoluminescence which are related to areas like Luminescence and Molecular physics.

His research integrates issues of Crystallography, Dislocation, Substrate and Sapphire in his study of Epitaxy. His Gallium nitride research includes themes of Electronic structure, Wurtzite crystal structure, Electronic band structure and Lattice constant. His Analytical chemistry study combines topics in areas such as Crystal growth, Doping, Annealing, Mineralogy and Gallium.

He most often published in these fields:

  • Optoelectronics (37.53%)
  • Condensed matter physics (21.16%)
  • Epitaxy (20.40%)

What were the highlights of his more recent work (between 2006-2021)?

  • Optoelectronics (37.53%)
  • Laser (13.35%)
  • Gallium nitride (20.15%)

In recent papers he was focusing on the following fields of study:

His primary areas of study are Optoelectronics, Laser, Gallium nitride, Diode and Molecular beam epitaxy. The Optoelectronics study combines topics in areas such as Quantum well, Optics, Epitaxy and Nitride. His Gallium nitride research is multidisciplinary, incorporating perspectives in Crystallization and Mineralogy.

His Crystallization research is multidisciplinary, incorporating elements of Crystallography, Crystal growth, Dissolution, Analytical chemistry and Sapphire. He has included themes like Etching and Condensed matter physics, Doping in his Crystallography study. His Molecular beam epitaxy study incorporates themes from Wide-bandgap semiconductor, Indium and Wurtzite crystal structure.

Between 2006 and 2021, his most popular works were:

  • Bulk GaN crystal growth by the high-pressure ammonothermal method (163 citations)
  • Nonradiative recombination at threading dislocations in n-type GaN: Studied by cathodoluminescence and defect selective etching (56 citations)
  • Highly reproducible, stable and multiply regenerated surface-enhanced Raman scattering substrate for biomedical applications (52 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Photon
  • Atom

Sylwester Porowski spends much of his time researching Optoelectronics, Molecular beam epitaxy, Laser, Diode and Quantum well. The study incorporates disciplines such as Gallium nitride, Epitaxy and Nitride in addition to Optoelectronics. His Epitaxy research is multidisciplinary, relying on both Crystal growth and Dislocation.

Sylwester Porowski works mostly in the field of Molecular beam epitaxy, limiting it down to concerns involving Indium and, occasionally, Superlattice and Gallium. His Laser course of study focuses on Substrate and Molecular beam epitaxial growth and Phenomenological model. In his study, Silicon and Analytical chemistry is strongly linked to Semiconductor, which falls under the umbrella field of Mineralogy.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Observation Of Native Ga Vacancies In Gan By Positron Annihilation

K. Saarinen;T. Laine;S. Kuisma;J. Nissilä.
MRS Proceedings (1997)

587 Citations

Observation of Native Ga Vacancies in GaN by Positron Annihilation

K. Saarinen;T. Laine;S. Kuisma;J. Nissilä.
Physical Review Letters (1997)

580 Citations

Lattice parameters of gallium nitride

M. Leszczynski;H. Teisseyre;T. Suski;I. Grzegory.
Applied Physics Letters (1996)

510 Citations

Towards the identification of the dominant donor in GaN.

P Perlin;T Suski;H Teisseyre;M Leszczynski.
Physical Review Letters (1995)

420 Citations

Photoluminescence and reflectance spectroscopy of excitonic transitions in high-quality homoepitaxial GaN films

K. Kornitzer;T. Ebner;K. Thonke;R. Sauer.
Physical Review B (1999)

300 Citations

Thermal expansion of gallium nitride

M. Leszczynski;T. Suski;H. Teisseyre;P. Perlin.
Journal of Applied Physics (1994)

293 Citations

Mechanism of yellow luminescence in GaN

T. Suski;P. Perlin;H. Teisseyre;M. Leszczyński.
Applied Physics Letters (1995)

275 Citations

Investigation of longitudinal‐optical phonon‐plasmon coupled modes in highly conducting bulk GaN

P. Perlin;J. Camassel;W. Knap;T. Taliercio.
Applied Physics Letters (1995)

274 Citations

Chemical polishing of bulk and epitaxial GaN

J.L. Weyher;S. Müller;I. Grzegory;S. Porowski.
Journal of Crystal Growth (1997)

270 Citations

Thermodynamical properties of III–V nitrides and crystal growth of GaN at high N2 pressure

S. Porowski;I. Grzegory.
Journal of Crystal Growth (1997)

263 Citations

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