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Sylwester Porowski

Sylwester Porowski

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Materials Science
Poland
2025

D-Index & Metrics

Materials Science

D-Index
64
Citations
14556
World Ranking
5899
National Ranking
11

Sylwester Porowski publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Sylwester Porowski sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 405 publications — 78th percentile

78% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Sylwester Porowski D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Sylwester Porowski sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 64 D-Index — 55th percentile

55% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2025 - Research.com Materials Science in Poland Leader Award
  • 2022 - Research.com Materials Science in Poland Leader Award
  • 2013 - Prize of the Foundation for Polish Science - Nagroda Fundacji na rzecz Nauki Polskiej for developing a high-pressure method for producing gallium nitride monocrystals

Overview

Sylwester Porowski is affiliated with the Polish Academy of Sciences in Poland. Their research spans several fields including Materials Science, Physics and Astronomy, and Engineering, with notable contributions to subfields such as Materials Chemistry, Condensed Matter Physics, Electrical and Electronic Engineering, Geophysics, and Electronic, Optical and Magnetic Materials.

The main topics of their research focus on semiconductor and advanced materials, particularly:

  • GaN-based semiconductor devices and materials
  • ZnO doping and properties
  • Semiconductor materials and devices
  • High-pressure geophysics and materials
  • Thermal properties of materials
  • Ga2O3 and related materials
  • Intermetallics and Advanced Alloy Properties

Several frequently published venues for their work include:

  • Solid State Communications
  • Physical Review B
  • Chemistry of Materials
  • International Journal of Molecular Sciences
  • Materials

Recent notable papers authored or coauthored by Sylwester Porowski include:

  • "Experimental and theoretical evidence of the temperature-induced wurtzite to rocksalt phase transition in GaN under high pressure," 2020, Physical Review B
  • "Melting versus Decomposition of GaN: Ab Initio Molecular Dynamics Study and Comparison to Experimental Data," 2023, Chemistry of Materials
  • "Nitrogen Dissolution in Liquid Ga and Fe: Comprehensive Ab Initio Analysis, Relevance for Crystallization of GaN," 2021, Materials
  • "Ab Initio Molecular Dynamics Insight to Structural Phase Transition and Thermal Decomposition of InN," 2024, International Journal of Molecular Sciences
  • "Influence of Pressure on Phonon Properties of Indium Antimonide," 2024, physica status solidi (RRL) - Rapid Research Letters

Frequent collaborators include:

  • I. Grzegory
  • B. Sadovyi
  • Stanisław Krukowski
  • Jacek Piechota
  • Petro Sadovyi

Sylwester Porowski was awarded the Prize of the Foundation for Polish Science (Nagroda Fundacji na rzecz Nauki Polskiej) in 2013 for developing a high-pressure method for producing gallium nitride monocrystals.

Best Publications

  • Observation Of Native Ga Vacancies In Gan By Positron Annihilation

    K. Saarinen;T. Laine;S. Kuisma;J. Nissilä

  • Lattice parameters of gallium nitride

    M. Leszczynski;H. Teisseyre;T. Suski;I. Grzegory

  • Towards the identification of the dominant donor in GaN.

    P Perlin;T Suski;H Teisseyre;M Leszczynski

  • Equilibrium pressure of N2 over GaN and high pressure solution growth of GaN

    Unknown

  • Photoluminescence and reflectance spectroscopy of excitonic transitions in high-quality homoepitaxial GaN films

    K. Kornitzer;T. Ebner;K. Thonke;R. Sauer

  • Thermal expansion of gallium nitride

    M. Leszczynski;T. Suski;H. Teisseyre;P. Perlin

  • Investigation of longitudinal‐optical phonon‐plasmon coupled modes in highly conducting bulk GaN

    P. Perlin;J. Camassel;W. Knap;T. Taliercio

  • Chemical polishing of bulk and epitaxial GaN

    J.L. Weyher;S. Müller;I. Grzegory;S. Porowski

  • Mechanism of yellow luminescence in GaN

    T. Suski;P. Perlin;H. Teisseyre;M. Leszczyński

  • Thermodynamical properties of III–V nitrides and crystal growth of GaN at high N2 pressure

    S. Porowski;I. Grzegory

  • Bulk GaN crystal growth by the high-pressure ammonothermal method

    M.P. D’Evelyn;H.C. Hong;D.-S. Park;H. Lu

  • Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer

    H. Teisseyre;P. Perlin;T. Suski;I. Grzegory

  • High pressure growth of GaN — new prospects for blue lasers

    S. Porowski

  • Polarity determination for GaN films grown on (0001) sapphire and high-pressure-grown GaN single crystals

    J. L. Rouviere;J. L. Weyher;M. Seelmann-Eggebert;S. Porowski

  • Elastic and plastic properties of GaN determined by nano-indentation of bulk crystal

    R. Nowak;M. Pessa;M. Suganuma;M. Leszczynski

  • Determination of the effective mass of GaN from infrared reflectivity and Hall effect

    P. Perlin;E. Litwin‐Staszewska;B. Suchanek;W. Knap

  • III V Nitrides—thermodynamics and crystal growth at high N2 pressure

    I. Grzegory;J. Jun;M. Boćkowski;St. Krukowski

  • Exciton region reflectance of homoepitaxial GaN layers

    K. P. Korona;A. Wysmol;ek;K. Pakul

  • Negative differential resistance in dislocation-free GaN/AlGaN double-barrier diodes grown on bulk GaN

    S. Golka;C. Pflügl;W. Schrenk;G. Strasser

  • Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substrates

    K. Pakuła;A. Wysmołek;K.P. Korona;J.M. Baranowski;J.M. Baranowski

  • High Electron Mobility in AlGaN/GaN Heterostructures Grown on Bulk GaN Substrates

    E. Frayssinet;W. Knap;P. Lorenzini;N. Grandjean

Frequent Co-Authors

Izabella Grzegory
Izabella Grzegory Polish Academy of Sciences
Tadeusz Suski
Tadeusz Suski Polish Academy of Sciences
Michal Bockowski
Michal Bockowski Polish Academy of Sciences
Z. R. Wasilewski
Z. R. Wasilewski University of Waterloo
Zuzanna Liliental-Weber
Zuzanna Liliental-Weber Lawrence Berkeley National Laboratory
Bo Monemar
Bo Monemar Linköping University
Kimmo Saarinen
Kimmo Saarinen Aalto University
Nicolas Grandjean
Nicolas Grandjean École Polytechnique Fédérale de Lausanne
Wojciech Knap
Wojciech Knap Warsaw University of Technology
Bernard Beaumont
Bernard Beaumont Centre national de la recherche scientifique, CNRS

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