2022 - Research.com Materials Science in Poland Leader Award
2013 - Prize of the Foundation for Polish Science - Nagroda Fundacji na rzecz Nauki Polskiej for developing a high-pressure method for producing gallium nitride monocrystals
Sylwester Porowski focuses on Optoelectronics, Epitaxy, Analytical chemistry, Crystallography and Gallium nitride. His work deals with themes such as Exciton and Laser, which intersect with Optoelectronics. His biological study spans a wide range of topics, including Crystal growth, Photoluminescence and Thin film.
His Analytical chemistry research integrates issues from Sapphire, Metalorganic vapour phase epitaxy, Doping and Gallium. His study looks at the relationship between Crystallography and fields such as Transmission electron microscopy, as well as how they intersect with chemical problems. Sylwester Porowski combines subjects such as Indentation, Diamond, Lattice constant, Brittleness and Wurtzite crystal structure with his study of Gallium nitride.
His scientific interests lie mostly in Optoelectronics, Condensed matter physics, Epitaxy, Gallium nitride and Analytical chemistry. His work carried out in the field of Optoelectronics brings together such families of science as Molecular beam epitaxy, Laser and Nitride. His work in Condensed matter physics tackles topics such as Photoluminescence which are related to areas like Luminescence and Molecular physics.
His research integrates issues of Crystallography, Dislocation, Substrate and Sapphire in his study of Epitaxy. His Gallium nitride research includes themes of Electronic structure, Wurtzite crystal structure, Electronic band structure and Lattice constant. His Analytical chemistry study combines topics in areas such as Crystal growth, Doping, Annealing, Mineralogy and Gallium.
His primary areas of study are Optoelectronics, Laser, Gallium nitride, Diode and Molecular beam epitaxy. The Optoelectronics study combines topics in areas such as Quantum well, Optics, Epitaxy and Nitride. His Gallium nitride research is multidisciplinary, incorporating perspectives in Crystallization and Mineralogy.
His Crystallization research is multidisciplinary, incorporating elements of Crystallography, Crystal growth, Dissolution, Analytical chemistry and Sapphire. He has included themes like Etching and Condensed matter physics, Doping in his Crystallography study. His Molecular beam epitaxy study incorporates themes from Wide-bandgap semiconductor, Indium and Wurtzite crystal structure.
Sylwester Porowski spends much of his time researching Optoelectronics, Molecular beam epitaxy, Laser, Diode and Quantum well. The study incorporates disciplines such as Gallium nitride, Epitaxy and Nitride in addition to Optoelectronics. His Epitaxy research is multidisciplinary, relying on both Crystal growth and Dislocation.
Sylwester Porowski works mostly in the field of Molecular beam epitaxy, limiting it down to concerns involving Indium and, occasionally, Superlattice and Gallium. His Laser course of study focuses on Substrate and Molecular beam epitaxial growth and Phenomenological model. In his study, Silicon and Analytical chemistry is strongly linked to Semiconductor, which falls under the umbrella field of Mineralogy.
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Observation Of Native Ga Vacancies In Gan By Positron Annihilation
K. Saarinen;T. Laine;S. Kuisma;J. Nissilä.
MRS Proceedings (1997)
Observation of Native Ga Vacancies in GaN by Positron Annihilation
K. Saarinen;T. Laine;S. Kuisma;J. Nissilä.
Physical Review Letters (1997)
Lattice parameters of gallium nitride
M. Leszczynski;H. Teisseyre;T. Suski;I. Grzegory.
Applied Physics Letters (1996)
Towards the identification of the dominant donor in GaN.
P Perlin;T Suski;H Teisseyre;M Leszczynski.
Physical Review Letters (1995)
Photoluminescence and reflectance spectroscopy of excitonic transitions in high-quality homoepitaxial GaN films
K. Kornitzer;T. Ebner;K. Thonke;R. Sauer.
Physical Review B (1999)
Thermal expansion of gallium nitride
M. Leszczynski;T. Suski;H. Teisseyre;P. Perlin.
Journal of Applied Physics (1994)
Mechanism of yellow luminescence in GaN
T. Suski;P. Perlin;H. Teisseyre;M. Leszczyński.
Applied Physics Letters (1995)
Investigation of longitudinal‐optical phonon‐plasmon coupled modes in highly conducting bulk GaN
P. Perlin;J. Camassel;W. Knap;T. Taliercio.
Applied Physics Letters (1995)
Chemical polishing of bulk and epitaxial GaN
J.L. Weyher;S. Müller;I. Grzegory;S. Porowski.
Journal of Crystal Growth (1997)
Thermodynamical properties of III–V nitrides and crystal growth of GaN at high N2 pressure
S. Porowski;I. Grzegory.
Journal of Crystal Growth (1997)
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