Sylwester Porowski

Research.com Recognitions

• 2025 - Research.com Materials Science in Poland Leader Award
• 2022 - Research.com Materials Science in Poland Leader Award
• 2013 - Prize of the Foundation for Polish Science - Nagroda Fundacji na rzecz Nauki Polskiej for developing a high-pressure method for producing gallium nitride monocrystals

Overview

Best Publications

• Observation Of Native Ga Vacancies In Gan By Positron Annihilation

  K. Saarinen;T. Laine;S. Kuisma;J. Nissilä

  601
  Citations

• Lattice parameters of gallium nitride

  M. Leszczynski;H. Teisseyre;T. Suski;I. Grzegory

  567
  Citations

• Towards the identification of the dominant donor in GaN.

  P Perlin;T Suski;H Teisseyre;M Leszczynski

  436
  Citations

• Equilibrium pressure of N2 over GaN and high pressure solution growth of GaN

  Unknown

  359
  Citations

• Photoluminescence and reflectance spectroscopy of excitonic transitions in high-quality homoepitaxial GaN films

  K. Kornitzer;T. Ebner;K. Thonke;R. Sauer

  310
  Citations

• Thermal expansion of gallium nitride

  M. Leszczynski;T. Suski;H. Teisseyre;P. Perlin

  308
  Citations

• Investigation of longitudinal‐optical phonon‐plasmon coupled modes in highly conducting bulk GaN

  P. Perlin;J. Camassel;W. Knap;T. Taliercio

  282
  Citations

• Chemical polishing of bulk and epitaxial GaN

  J.L. Weyher;S. Müller;I. Grzegory;S. Porowski

  282
  Citations

• Mechanism of yellow luminescence in GaN

  T. Suski;P. Perlin;H. Teisseyre;M. Leszczyński

  280
  Citations

• Thermodynamical properties of III–V nitrides and crystal growth of GaN at high N2 pressure

  S. Porowski;I. Grzegory

  272
  Citations

• Bulk GaN crystal growth by the high-pressure ammonothermal method

  M.P. D’Evelyn;H.C. Hong;D.-S. Park;H. Lu

  254
  Citations

• Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer

  H. Teisseyre;P. Perlin;T. Suski;I. Grzegory

  248
  Citations

• High pressure growth of GaN — new prospects for blue lasers

  S. Porowski

  228
  Citations

• Polarity determination for GaN films grown on (0001) sapphire and high-pressure-grown GaN single crystals

  J. L. Rouviere;J. L. Weyher;M. Seelmann-Eggebert;S. Porowski

  220
  Citations

• Elastic and plastic properties of GaN determined by nano-indentation of bulk crystal

  R. Nowak;M. Pessa;M. Suganuma;M. Leszczynski

  213
  Citations

• Determination of the effective mass of GaN from infrared reflectivity and Hall effect

  P. Perlin;E. Litwin‐Staszewska;B. Suchanek;W. Knap

  205
  Citations

• III V Nitrides—thermodynamics and crystal growth at high N2 pressure

  I. Grzegory;J. Jun;M. Boćkowski;St. Krukowski

  200
  Citations

• Exciton region reflectance of homoepitaxial GaN layers

  K. P. Korona;A. Wysmol;ek;K. Pakul

  193
  Citations

• Negative differential resistance in dislocation-free GaN/AlGaN double-barrier diodes grown on bulk GaN

  S. Golka;C. Pflügl;W. Schrenk;G. Strasser

  180
  Citations

• Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substrates

  K. Pakuła;A. Wysmołek;K.P. Korona;J.M. Baranowski;J.M. Baranowski

  176
  Citations

• High Electron Mobility in AlGaN/GaN Heterostructures Grown on Bulk GaN Substrates

  E. Frayssinet;W. Knap;P. Lorenzini;N. Grandjean

  170
  Citations