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D-Index & Metrics

Materials Science

D-Index
60
Citations
13252
World Ranking
7030
National Ranking
1764

Zuzanna Liliental-Weber publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Zuzanna Liliental-Weber sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 414 publications — 79th percentile

79% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Zuzanna Liliental-Weber D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Zuzanna Liliental-Weber sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 60 D-Index — 46th percentile

46% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Zuzanna Liliental-Weber is affiliated with the Lawrence Berkeley National Laboratory in the United States. Their research focuses on the intersection of physics, engineering, and materials science, with particular emphasis on the properties and mechanics of advanced semiconductor materials.

The scientist has contributed to several fields, including:

  • Physics and Astronomy
  • Engineering
  • Materials Science

In terms of subfields, their work spans:

  • Condensed Matter Physics
  • Mechanics of Materials
  • Electronic, Optical and Magnetic Materials

Their main research topics include:

  • GaN-based semiconductor devices and materials
  • Metal and Thin Film Mechanics
  • Ga2O3 and related materials

The scientist has coauthored publications with collaborators such as Roberto dos Reis.

One of their recent publications is titled Effects of structural defects on optical properties of InxGa1−xN layers and quantum wells, published in 2024 in the Journal of Applied Physics. This paper has been cited in the scientific community and reflects ongoing research in the optical characteristics of semiconductor layers affected by structural imperfections.

The researcher's frequent publication venue is:

  • Journal of Applied Physics

Best Publications

  • Strain-related phenomena in GaN thin films

    C. Kisielowski;J. Krüger;S. Ruvimov;T. Suski

  • Structural properties of As‐rich GaAs grown by molecular beam epitaxy at low temperatures

    M. Kaminska;Z. Liliental-Weber;E. R. Weber;T. George

  • The advanced unified defect model for Schottky barrier formation

    W. E. Spicer;Z. Liliental-Weber;E. Weber;N. Newman;N. Newman

  • Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n-GaN

    S. Ruvimov;Z. Liliental‐Weber;J. Washburn;K. J. Duxstad

  • Formation Mechanism of Nanotubes in GaN

    Z. Liliental-Weber;Y. Chen;S. Ruvimov;J. Washburn

  • Native point defects in low-temperature-grown GaAs

    X. Liu;A. Prasad;J. Nishio;E. R. Weber

  • Structure and electronic properties of InN and In-rich group III-nitride alloys

    W Walukiewicz;J W Ager;K M Yu;Z Liliental-Weber

  • Stoichiometry‐related defects in GaAs grown by molecular‐beam epitaxy at low temperatures

    M. Kaminska;E. R. Weber;Z. Liliental‐Weber;R. Leon

  • Structural TEM study of nonpolar a-plane gallium nitride grown on (112_0) 4H-SiC by organometallic vapor phase epitaxy

    Dmitri N. Zakharov;Zuzanna Liliental-Weber;Brian Wagner;Zachary J. Reitmeier

  • Phase-change recording medium that enables ultrahigh-density electron-beam data storage

    G.A. Gibson;A. Chaiken;K. Nauka;C.C. Yang

  • Donor and acceptor concentrations in degenerate InN

    David C. Look;H. Lu;William J. Schaff;J. Jasinski

  • Atomic Scale Indium Distribution in a GaN/In0.43Ga0.57N/Al0.1Ga0.9N Quantum Well Structure

    Christian Kisielowski;Zuzanna Liliental-Weber;Shuji Nakamura

  • Effect of Si doping on the dislocation structure of GaN grown on the A-face of sapphire

    Sergei Ruvimov;Zuzanna Liliental‐Weber;Tadeusz Suski;Joel W. Ager

  • Mechanism responsible for the semi‐insulating properties of low‐temperature‐grown GaAs

    X. Liu;A. Prasad;W. M. Chen;A. Kurpiewski

  • Microstructure of Ti/Al ohmic contacts for n-AlGaN

    S. Ruvimov;Z. Liliental-Weber;J. Washburn;D. Qiao

  • Tunable intersublevel transitions in self-forming semiconductor quantum dots

    R. Leon;S. Fafard;P. G. Piva;S. Ruvimov

  • Effects of the growth temperature and As/Ga flux ratio on the incorporation of excess As into low temperature grown GaAs

    M. Luysberg;H. Sohn;A. Prasad;P. Specht

  • Breakdown of crystallinity in low-temperature-grown GaAs layers

    Zuzanna Liliental‐Weber;W. Swider;K. M. Yu;J. Kortright

  • On the crystalline structure, stoichiometry and band gap of InN thin films

    K. M. Yu;Z. Liliental-Weber;W. Walukiewicz;W. Shan

  • Orthodox etching of HVPE-grown GaN

    J.L. Weyher;J.L. Weyher;S. Lazar;L. Macht;Z. Liliental-Weber

  • Quantum shift of band-edge stimulated emission in InGaN–GaN multiple quantum well light-emitting diodes

    C. J. Sun;M. Zubair Anwar;Q. Chen;J. W. Yang

Frequent Co-Authors

Eicke R. Weber
Eicke R. Weber University of California, Berkeley
Kin Man Yu
Kin Man Yu City University of Hong Kong
Jacek B. Jasinski
Jacek B. Jasinski University of Louisville
Joel W. Ager
Joel W. Ager Lawrence Berkeley National Laboratory
Wladek Walukiewicz
Wladek Walukiewicz Lawrence Berkeley National Laboratory
Nathan Newman
Nathan Newman Arizona State University
William J. Schaff
William J. Schaff Cornell University
Eugene E. Haller
Eugene E. Haller Lawrence Berkeley National Laboratory
Hadis Morkoç
Hadis Morkoç Virginia Commonwealth University
Russell D. Dupuis
Russell D. Dupuis Georgia Institute of Technology

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