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Materials Science

D-Index
60
Citations
13252
World Ranking
7032
National Ranking
1766

Overview

Zuzanna Liliental-Weber is affiliated with the Lawrence Berkeley National Laboratory in the United States. Their research focuses on the intersection of physics, engineering, and materials science, with particular emphasis on the properties and mechanics of advanced semiconductor materials.

The scientist has contributed to several fields, including:

  • Physics and Astronomy
  • Engineering
  • Materials Science

In terms of subfields, their work spans:

  • Condensed Matter Physics
  • Mechanics of Materials
  • Electronic, Optical and Magnetic Materials

Their main research topics include:

  • GaN-based semiconductor devices and materials
  • Metal and Thin Film Mechanics
  • Ga2O3 and related materials

The scientist has coauthored publications with collaborators such as Roberto dos Reis.

One of their recent publications is titled Effects of structural defects on optical properties of InxGa1−xN layers and quantum wells, published in 2024 in the Journal of Applied Physics. This paper has been cited in the scientific community and reflects ongoing research in the optical characteristics of semiconductor layers affected by structural imperfections.

The researcher's frequent publication venue is:

  • Journal of Applied Physics

Best Publications

  • Strain-related phenomena in GaN thin films

    C. Kisielowski;J. Krüger;S. Ruvimov;T. Suski

  • Structural properties of As‐rich GaAs grown by molecular beam epitaxy at low temperatures

    M. Kaminska;Z. Liliental-Weber;E. R. Weber;T. George

  • The advanced unified defect model for Schottky barrier formation

    W. E. Spicer;Z. Liliental-Weber;E. Weber;N. Newman;N. Newman

  • Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n-GaN

    S. Ruvimov;Z. Liliental‐Weber;J. Washburn;K. J. Duxstad

  • Formation Mechanism of Nanotubes in GaN

    Z. Liliental-Weber;Y. Chen;S. Ruvimov;J. Washburn

  • Native point defects in low-temperature-grown GaAs

    X. Liu;A. Prasad;J. Nishio;E. R. Weber

  • Structure and electronic properties of InN and In-rich group III-nitride alloys

    W Walukiewicz;J W Ager;K M Yu;Z Liliental-Weber

  • Stoichiometry‐related defects in GaAs grown by molecular‐beam epitaxy at low temperatures

    M. Kaminska;E. R. Weber;Z. Liliental‐Weber;R. Leon

  • Structural TEM study of nonpolar a-plane gallium nitride grown on (112_0) 4H-SiC by organometallic vapor phase epitaxy

    Dmitri N. Zakharov;Zuzanna Liliental-Weber;Brian Wagner;Zachary J. Reitmeier

  • Phase-change recording medium that enables ultrahigh-density electron-beam data storage

    G.A. Gibson;A. Chaiken;K. Nauka;C.C. Yang

  • Donor and acceptor concentrations in degenerate InN

    David C. Look;H. Lu;William J. Schaff;J. Jasinski

  • Atomic Scale Indium Distribution in a GaN/In0.43Ga0.57N/Al0.1Ga0.9N Quantum Well Structure

    Christian Kisielowski;Zuzanna Liliental-Weber;Shuji Nakamura

  • Effect of Si doping on the dislocation structure of GaN grown on the A-face of sapphire

    Sergei Ruvimov;Zuzanna Liliental‐Weber;Tadeusz Suski;Joel W. Ager

  • Mechanism responsible for the semi‐insulating properties of low‐temperature‐grown GaAs

    X. Liu;A. Prasad;W. M. Chen;A. Kurpiewski

  • Microstructure of Ti/Al ohmic contacts for n-AlGaN

    S. Ruvimov;Z. Liliental-Weber;J. Washburn;D. Qiao

  • Tunable intersublevel transitions in self-forming semiconductor quantum dots

    R. Leon;S. Fafard;P. G. Piva;S. Ruvimov

  • Effects of the growth temperature and As/Ga flux ratio on the incorporation of excess As into low temperature grown GaAs

    M. Luysberg;H. Sohn;A. Prasad;P. Specht

  • Breakdown of crystallinity in low-temperature-grown GaAs layers

    Zuzanna Liliental‐Weber;W. Swider;K. M. Yu;J. Kortright

  • On the crystalline structure, stoichiometry and band gap of InN thin films

    K. M. Yu;Z. Liliental-Weber;W. Walukiewicz;W. Shan

  • Orthodox etching of HVPE-grown GaN

    J.L. Weyher;J.L. Weyher;S. Lazar;L. Macht;Z. Liliental-Weber

  • Quantum shift of band-edge stimulated emission in InGaN–GaN multiple quantum well light-emitting diodes

    C. J. Sun;M. Zubair Anwar;Q. Chen;J. W. Yang

Frequent Co-Authors

Eicke R. Weber
Eicke R. Weber University of California, Berkeley
Kin Man Yu
Kin Man Yu City University of Hong Kong
Jacek B. Jasinski
Jacek B. Jasinski University of Louisville
Joel W. Ager
Joel W. Ager Lawrence Berkeley National Laboratory
Wladek Walukiewicz
Wladek Walukiewicz Lawrence Berkeley National Laboratory
Nathan Newman
Nathan Newman Arizona State University
William J. Schaff
William J. Schaff Cornell University
Eugene E. Haller
Eugene E. Haller Lawrence Berkeley National Laboratory
Hadis Morkoç
Hadis Morkoç Virginia Commonwealth University
Russell D. Dupuis
Russell D. Dupuis Georgia Institute of Technology

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