Zuzanna Liliental-Weber focuses on Transmission electron microscopy, Epitaxy, Crystallography, Crystallographic defect and Condensed matter physics. The various areas that Zuzanna Liliental-Weber examines in her Transmission electron microscopy study include Crystal growth, Molecular beam epitaxy, Analytical chemistry, Sapphire and Microstructure. The study incorporates disciplines such as Optoelectronics, Electron mobility, Photoluminescence, Hydride and Dislocation in addition to Epitaxy.
Her work deals with themes such as X-ray crystallography, Full width at half maximum and Lattice constant, which intersect with Crystallography. Her work carried out in the field of Crystallographic defect brings together such families of science as Fermi level and Anisotropy. Her Condensed matter physics research is multidisciplinary, incorporating perspectives in Etching and Raman spectroscopy.
The scientist’s investigation covers issues in Transmission electron microscopy, Epitaxy, Crystallography, Optoelectronics and Condensed matter physics. Zuzanna Liliental-Weber has researched Transmission electron microscopy in several fields, including Molecular beam epitaxy, Annealing, Crystallographic defect, Analytical chemistry and Microstructure. Her Epitaxy research includes elements of Optics, Thin film, Crystal structure, Dislocation and Substrate.
Zuzanna Liliental-Weber combines subjects such as Sapphire, Metalorganic vapour phase epitaxy and Electron diffraction with her study of Crystallography. Her studies in Optoelectronics integrate themes in fields like Layer and Nitride. Her Condensed matter physics research incorporates elements of Stress relaxation, Fermi level and Schottky barrier.
Transmission electron microscopy, Optoelectronics, Crystallography, Epitaxy and Molecular beam epitaxy are her primary areas of study. Her Transmission electron microscopy research integrates issues from Layer, Sample preparation, Doping and Microstructure. Her studies deal with areas such as Sapphire, Gallium nitride and Nitride as well as Optoelectronics.
Her research in Crystallography intersects with topics in Annealing, Nanorod, Dopant, Substrate and Photoluminescence. Her Epitaxy study combines topics in areas such as Thin film, Chemical vapor deposition and Condensed matter physics, Dislocation. Her biological study spans a wide range of topics, including Amorphous solid, Absorption edge, Mineralogy, Analytical chemistry and Wurtzite crystal structure.
Zuzanna Liliental-Weber spends much of her time researching Molecular beam epitaxy, Optoelectronics, Amorphous solid, Band gap and Crystallography. Her Molecular beam epitaxy research incorporates themes from Thin film, Absorption, Analytical chemistry, Sapphire and Nitride. Her work carried out in the field of Thin film brings together such families of science as Substrate and Epitaxy.
Her work on Doping is typically connected to Fabrication and Buffer as part of general Optoelectronics study, connecting several disciplines of science. Her Crystallography research includes elements of Transmission electron microscopy, Annealing, Light-emitting diode and Photoluminescence. Her work deals with themes such as Metalorganic vapour phase epitaxy and Condensed matter physics, which intersect with Transmission electron microscopy.
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Strain-related phenomena in GaN thin films
C. Kisielowski;J. Krüger;S. Ruvimov;T. Suski.
Physical Review B (1996)
Structural properties of As‐rich GaAs grown by molecular beam epitaxy at low temperatures
M. Kaminska;Z. Liliental-Weber;E. R. Weber;T. George.
Applied Physics Letters (1989)
The advanced unified defect model for Schottky barrier formation
W. E. Spicer;Z. Liliental-Weber;E. Weber;N. Newman;N. Newman.
Journal of Vacuum Science & Technology B (1988)
Formation Mechanism of Nanotubes in GaN
Z. Liliental-Weber;Y. Chen;S. Ruvimov;J. Washburn.
Physical Review Letters (1997)
Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n-GaN
S. Ruvimov;Z. Liliental‐Weber;J. Washburn;K. J. Duxstad.
Applied Physics Letters (1996)
Native point defects in low-temperature-grown GaAs
X. Liu;A. Prasad;J. Nishio;E. R. Weber.
Applied Physics Letters (1995)
Structure and electronic properties of InN and In-rich group III-nitride alloys
W Walukiewicz;J W Ager;K M Yu;Z Liliental-Weber.
Journal of Physics D (2006)
Stoichiometry‐related defects in GaAs grown by molecular‐beam epitaxy at low temperatures
M. Kaminska;E. R. Weber;Z. Liliental‐Weber;R. Leon.
Journal of Vacuum Science & Technology B (1989)
Structural TEM study of nonpolar a-plane gallium nitride grown on (112_0) 4H-SiC by organometallic vapor phase epitaxy
Dmitri N. Zakharov;Zuzanna Liliental-Weber;Brian Wagner;Zachary J. Reitmeier.
Physical Review B (2005)
Phase-change recording medium that enables ultrahigh-density electron-beam data storage
G.A. Gibson;A. Chaiken;K. Nauka;C.C. Yang.
Applied Physics Letters (2005)
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