World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
63
Citations
15674
World Ranking
1366
National Ranking
565

Materials Science

D-Index
64
Citations
15982
World Ranking
5846
National Ranking
1508

Overview

Russell D. Dupuis is affiliated with the Georgia Institute of Technology in the United States. Their research spans multiple fields, including Physics and Astronomy, Engineering, and Materials Science. Subfields of study related to their work include Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Biomedical Engineering, and Atomic and Molecular Physics, and Optics.

The main topics of Dupuis's research involve GaN-based semiconductor devices and materials, Ga2O3 and related materials, photocathodes and microchannel plates, semiconductor quantum structures and devices, semiconductor materials and devices, metal and thin film mechanics, and silicon carbide semiconductor technologies.

Dupuis has authored several papers in various scientific journals. Notable recent publications include:

  • Effective Leakage Current Reduction in GaN Ultraviolet Avalanche Photodiodes With an Ion-Implantation Isolation Method, 2021, IEEE Transactions on Electron Devices
  • Design of Ion-Implanted Junction Termination Extension for Vertical GaN Pin Rectifiers, 2020, ECS Transactions
  • Breakdown characteristics of deep-ultraviolet Al0.6Ga0.4N p-i-n avalanche photodiodes, 2022, Journal of Applied Physics
  • 1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings, 2023, IEEE Transactions on Electron Devices
  • Flexible single-crystalline GaN substrate by direct deposition of III-N thin films on polycrystalline metal tape, 2020, Journal of Materials Chemistry C

Frequent coauthors collaborating with Dupuis include Theeradetch Detchprohm, Shyh-Chiang Shen, Zhiyu Xu, Minkyu Cho, and Marzieh Bakhtiary-Noodeh.

Dupuis has published multiple papers in key research venues, notably:

  • IEEE Transactions on Electron Devices
  • Journal of Crystal Growth
  • Journal of Applied Physics
  • Journal of Electronic Materials
  • Applied Physics Letters

In their academic contributions, Dupuis has also authored at least one book published by Springer International Publishing titled Gallium Nitride and Related Materials, scheduled for 2025 publication.

Best Publications

  • GaN avalanche photodiodes

    J. C. Carrano;D. J.H. Lambert;C. J. Eiting;C. J. Collins

  • Quantum-well heterostructure lasers

    Unknown

  • Growth of uniformly aligned ZnO nanowire heterojunction arrays on GaN, AlN, and Al0.5Ga0.5N substrates.

    Xudong Wang;Jinhui Song;Peng Li;Jae Hyun Ryou

  • Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells

    Jae-Hyun Ryou;P.D. Yoder;Jianping Liu;Z. Lochner

  • Comprehensive characterization of metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN

    J. C. Carrano;T. Li;P. A. Grudowski;C. J. Eiting

  • Ordered Nanowire Array Blue/Near-UV Light Emitting Diodes

    Sheng Xu;Chen Xu;Ying Liu;Youfan Hu

  • Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer

    Suk Choi;Hee Jin Kim;Seong-Soo Kim;Jianping Liu

  • Room‐temperature laser operation of quantum‐well Ga(1−x)AlxAs‐GaAs laser diodes grown by metalorganic chemical vapor deposition

    R. D. Dupuis;P. D. Dapkus;Nick Holonyak;E. A. Rezek

  • Toward the development of miniaturized imaging systems for detection of pre-cancer

    M.R. Descour;A.H.O. Karkkainen;J.D. Rogers;Chen Liang

  • Barrier effect on hole transport and carrier distribution in InGaN∕GaN multiple quantum well visible light-emitting diodes

    J. P. Liu;J.-H. Ryou;R. D. Dupuis;J. Han

  • Improved solar-blind detectivity using an AlxGa1−xN heterojunction p–i–n photodiode

    C. J. Collins;U. Chowdhury;M. M. Wong;B. Yang

  • Carrier collection in a semiconductor quantum well

    H. Shichijo;R.M. Kolbas;N. Holonyak;R.D. Dupuis

  • Very low dark current metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers

    J. C. Carrano;P. A. Grudowski;C. J. Eiting;R. D. Dupuis

  • Photonic crystal nanobeam lasers

    Y. Zhang;M. Khan;Y. Huang;J. Ryou

  • Gallium nitride and related materials

    F.A. Ponce;R.D. Dupuis;S. Nakamura;J.A. Edmond

  • GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition

    J. B. Limb;D. Yoo;J. H. Ryou;W. Lee

  • Density-controlled growth of aligned ZnO nanowires sharing a common contact : A simple, low-cost, and mask-free technique for large-scale applications

    Xudong Wang;Jinhui Song;Christopher J. Summers;Jae Hyun Ryou

  • Temperature dependence of threshold current for quantum‐well AlxGa1−xAs‐GaAs heterostructure laser diodes

    R. Chin;N. Holonyak;B. A. Vojak;K. Hess

  • Room‐temperature operation of Ga(1−x)AlxAs/GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition

    Unknown

  • Selective-area and lateral epitaxial overgrowth of III–N materials by metal organic chemical vapor deposition

    J. Park;P. A. Grudowski;C. J. Eiting;R. D. Dupuis

  • Back illuminated AlGaN solar-blind photodetectors

    D. J. H. Lambert;M. M. Wong;U. Chowdhury;C. Collins

  • Current transport mechanisms in GaN-based metal–semiconductor–metal photodetectors

    J. C. Carrano;T. Li;P. A. Grudowski;C. J. Eiting

  • Metalorganic Chemical Vapor Deposition of III-V Semiconductors

    Unknown

Frequent Co-Authors

Jae-Hyun Ryou
Jae-Hyun Ryou University of Houston
Theeradetch Detchprohm
Theeradetch Detchprohm Georgia Institute of Technology
Fernando Ponce
Fernando Ponce Arizona State University
Joe C. Campbell
Joe C. Campbell University of Virginia
N. Holonyak
N. Holonyak University of Illinois at Urbana-Champaign
Milton Feng
Milton Feng University of Illinois at Urbana-Champaign
Zuzanna Liliental-Weber
Zuzanna Liliental-Weber Lawrence Berkeley National Laboratory
Shun Lien Chuang
Shun Lien Chuang University of Illinois at Urbana-Champaign
Ian T. Ferguson
Ian T. Ferguson Kennesaw State University
Peter M. Asbeck
Peter M. Asbeck University of California, San Diego

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