His primary areas of study are Optoelectronics, Wide-bandgap semiconductor, Chemical vapor deposition, Heterojunction and Quantum well. Russell D. Dupuis interconnects Laser and Optics in the investigation of issues within Optoelectronics. He combines subjects such as Wavelength, Schottky diode, Breakdown voltage, Semiconductor and Metal with his study of Wide-bandgap semiconductor.
His research integrates issues of Sapphire, Inorganic chemistry and Epitaxy in his study of Chemical vapor deposition. His studies in Heterojunction integrate themes in fields like Band gap, Nanowire, Electron and Photoexcitation. The Quantum well study which covers Semiconductor laser theory that intersects with Optical pumping, Phonon and Semiconductor device.
Optoelectronics, Metalorganic vapour phase epitaxy, Chemical vapor deposition, Heterojunction and Laser are his primary areas of study. Within one scientific family, he focuses on topics pertaining to Quantum well under Optoelectronics, and may sometimes address concerns connected to Quantum tunnelling. His studies deal with areas such as Sapphire, Gallium nitride, Substrate and Avalanche photodiode as well as Metalorganic vapour phase epitaxy.
His Chemical vapor deposition research integrates issues from Doping, Quantum dot, Photoluminescence, Analytical chemistry and Superlattice. Russell D. Dupuis focuses mostly in the field of Heterojunction, narrowing it down to matters related to Bipolar junction transistor and, in some cases, Common emitter. In Diode, Russell D. Dupuis works on issues like Light-emitting diode, which are connected to Electroluminescence.
Russell D. Dupuis mostly deals with Optoelectronics, Metalorganic vapour phase epitaxy, Ultraviolet, Epitaxy and Avalanche photodiode. He does research in Optoelectronics, focusing on Chemical vapor deposition specifically. His study on Ultraviolet also encompasses disciplines like
Russell D. Dupuis usually deals with Epitaxy and limits it to topics linked to Quantum well and Scanning transmission electron microscopy. His Avalanche photodiode study incorporates themes from Photodetector, Dark current and Ion implantation. His Laser study combines topics in areas such as Diode and Light-emitting diode.
His main research concerns Optoelectronics, Epitaxy, Sapphire, Chemical vapor deposition and Metalorganic vapour phase epitaxy. His study ties his expertise on Laser together with the subject of Optoelectronics. His Epitaxy research incorporates elements of Gallium nitride, Photoconductivity, Transmission electron microscopy, Chemical engineering and Wurtzite crystal structure.
The study incorporates disciplines such as Optical pumping, Full width at half maximum, Stimulated emission, Dislocation and Photoluminescence in addition to Sapphire. His studies deal with areas such as Distributed Bragg reflector, Resonance and Reflectivity as well as Chemical vapor deposition. His Metalorganic vapour phase epitaxy research is multidisciplinary, incorporating perspectives in Tensile strain and Island growth.
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GaN avalanche photodiodes
J. C. Carrano;D. J.H. Lambert;C. J. Eiting;C. J. Collins.
Applied Physics Letters (2000)
Growth of uniformly aligned ZnO nanowire heterojunction arrays on GaN, AlN, and Al0.5Ga0.5N substrates.
Xudong Wang;Jinhui Song;Peng Li;Jae Hyun Ryou.
Journal of the American Chemical Society (2005)
Growth of uniformly aligned ZnO nanowire heterojunction arrays on GaN, AlN, and Al0.5Ga0.5N substrates.
Xudong Wang;Jinhui Song;Peng Li;Jae Hyun Ryou.
Journal of the American Chemical Society (2005)
Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells
Jae-Hyun Ryou;P.D. Yoder;Jianping Liu;Z. Lochner.
IEEE Journal of Selected Topics in Quantum Electronics (2009)
Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells
Jae-Hyun Ryou;P.D. Yoder;Jianping Liu;Z. Lochner.
IEEE Journal of Selected Topics in Quantum Electronics (2009)
Comprehensive characterization of metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN
J. C. Carrano;T. Li;P. A. Grudowski;C. J. Eiting.
Journal of Applied Physics (1998)
Comprehensive characterization of metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN
J. C. Carrano;T. Li;P. A. Grudowski;C. J. Eiting.
Journal of Applied Physics (1998)
Ordered Nanowire Array Blue/Near-UV Light Emitting Diodes
Sheng Xu;Chen Xu;Ying Liu;Youfan Hu.
Advanced Materials (2010)
Ordered Nanowire Array Blue/Near-UV Light Emitting Diodes
Sheng Xu;Chen Xu;Ying Liu;Youfan Hu.
Advanced Materials (2010)
Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer
Suk Choi;Hee Jin Kim;Seong-Soo Kim;Jianping Liu.
Applied Physics Letters (2010)
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