D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 54 Citations 9,967 363 World Ranking 4836 National Ranking 1349
Electronics and Electrical Engineering D-index 52 Citations 9,689 419 World Ranking 1589 National Ranking 707

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Semiconductor
  • Electron

His primary areas of study are Optoelectronics, Wide-bandgap semiconductor, Chemical vapor deposition, Heterojunction and Quantum well. Russell D. Dupuis interconnects Laser and Optics in the investigation of issues within Optoelectronics. He combines subjects such as Wavelength, Schottky diode, Breakdown voltage, Semiconductor and Metal with his study of Wide-bandgap semiconductor.

His research integrates issues of Sapphire, Inorganic chemistry and Epitaxy in his study of Chemical vapor deposition. His studies in Heterojunction integrate themes in fields like Band gap, Nanowire, Electron and Photoexcitation. The Quantum well study which covers Semiconductor laser theory that intersects with Optical pumping, Phonon and Semiconductor device.

His most cited work include:

  • Growth of uniformly aligned ZnO nanowire heterojunction arrays on GaN, AlN, and Al0.5Ga0.5N substrates. (214 citations)
  • Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells (196 citations)
  • Ordered Nanowire Array Blue/Near‐UV Light Emitting Diodes (182 citations)

What are the main themes of his work throughout his whole career to date?

Optoelectronics, Metalorganic vapour phase epitaxy, Chemical vapor deposition, Heterojunction and Laser are his primary areas of study. Within one scientific family, he focuses on topics pertaining to Quantum well under Optoelectronics, and may sometimes address concerns connected to Quantum tunnelling. His studies deal with areas such as Sapphire, Gallium nitride, Substrate and Avalanche photodiode as well as Metalorganic vapour phase epitaxy.

His Chemical vapor deposition research integrates issues from Doping, Quantum dot, Photoluminescence, Analytical chemistry and Superlattice. Russell D. Dupuis focuses mostly in the field of Heterojunction, narrowing it down to matters related to Bipolar junction transistor and, in some cases, Common emitter. In Diode, Russell D. Dupuis works on issues like Light-emitting diode, which are connected to Electroluminescence.

He most often published in these fields:

  • Optoelectronics (78.03%)
  • Metalorganic vapour phase epitaxy (28.32%)
  • Chemical vapor deposition (28.03%)

What were the highlights of his more recent work (between 2014-2021)?

  • Optoelectronics (78.03%)
  • Metalorganic vapour phase epitaxy (28.32%)
  • Ultraviolet (10.98%)

In recent papers he was focusing on the following fields of study:

Russell D. Dupuis mostly deals with Optoelectronics, Metalorganic vapour phase epitaxy, Ultraviolet, Epitaxy and Avalanche photodiode. He does research in Optoelectronics, focusing on Chemical vapor deposition specifically. His study on Ultraviolet also encompasses disciplines like

  • Doping which connect with Superlattice,
  • Spontaneous emission most often made with reference to Stimulated emission.

Russell D. Dupuis usually deals with Epitaxy and limits it to topics linked to Quantum well and Scanning transmission electron microscopy. His Avalanche photodiode study incorporates themes from Photodetector, Dark current and Ion implantation. His Laser study combines topics in areas such as Diode and Light-emitting diode.

Between 2014 and 2021, his most popular works were:

  • Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate (42 citations)
  • Rethinking phonons: The issue of disorder (38 citations)
  • Growth of high‐quality AlN layers on sapphire substrates at relatively low temperatures by metalorganic chemical vapor deposition (37 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Electron
  • Semiconductor

His main research concerns Optoelectronics, Epitaxy, Sapphire, Chemical vapor deposition and Metalorganic vapour phase epitaxy. His study ties his expertise on Laser together with the subject of Optoelectronics. His Epitaxy research incorporates elements of Gallium nitride, Photoconductivity, Transmission electron microscopy, Chemical engineering and Wurtzite crystal structure.

The study incorporates disciplines such as Optical pumping, Full width at half maximum, Stimulated emission, Dislocation and Photoluminescence in addition to Sapphire. His studies deal with areas such as Distributed Bragg reflector, Resonance and Reflectivity as well as Chemical vapor deposition. His Metalorganic vapour phase epitaxy research is multidisciplinary, incorporating perspectives in Tensile strain and Island growth.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

GaN avalanche photodiodes

J. C. Carrano;D. J.H. Lambert;C. J. Eiting;C. J. Collins.
Applied Physics Letters (2000)

705 Citations

Growth of uniformly aligned ZnO nanowire heterojunction arrays on GaN, AlN, and Al0.5Ga0.5N substrates.

Xudong Wang;Jinhui Song;Peng Li;Jae Hyun Ryou.
Journal of the American Chemical Society (2005)

300 Citations

Growth of uniformly aligned ZnO nanowire heterojunction arrays on GaN, AlN, and Al0.5Ga0.5N substrates.

Xudong Wang;Jinhui Song;Peng Li;Jae Hyun Ryou.
Journal of the American Chemical Society (2005)

300 Citations

Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells

Jae-Hyun Ryou;P.D. Yoder;Jianping Liu;Z. Lochner.
IEEE Journal of Selected Topics in Quantum Electronics (2009)

269 Citations

Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells

Jae-Hyun Ryou;P.D. Yoder;Jianping Liu;Z. Lochner.
IEEE Journal of Selected Topics in Quantum Electronics (2009)

269 Citations

Comprehensive characterization of metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN

J. C. Carrano;T. Li;P. A. Grudowski;C. J. Eiting.
Journal of Applied Physics (1998)

268 Citations

Comprehensive characterization of metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN

J. C. Carrano;T. Li;P. A. Grudowski;C. J. Eiting.
Journal of Applied Physics (1998)

268 Citations

Ordered Nanowire Array Blue/Near-UV Light Emitting Diodes

Sheng Xu;Chen Xu;Ying Liu;Youfan Hu.
Advanced Materials (2010)

252 Citations

Ordered Nanowire Array Blue/Near-UV Light Emitting Diodes

Sheng Xu;Chen Xu;Ying Liu;Youfan Hu.
Advanced Materials (2010)

252 Citations

Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer

Suk Choi;Hee Jin Kim;Seong-Soo Kim;Jianping Liu.
Applied Physics Letters (2010)

244 Citations

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