World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
63
Citations
15674
World Ranking
1366
National Ranking
566

Materials Science

D-Index
64
Citations
15982
World Ranking
5844
National Ranking
1506

Russell D. Dupuis publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Russell D. Dupuis sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 589 publications — 90th percentile

90% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Russell D. Dupuis D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Russell D. Dupuis sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 63 D-Index — 81st percentile

81% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Russell D. Dupuis is affiliated with the Georgia Institute of Technology in the United States. Their research spans multiple fields, including Physics and Astronomy, Engineering, and Materials Science. Subfields of study related to their work include Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Biomedical Engineering, and Atomic and Molecular Physics, and Optics.

The main topics of Dupuis's research involve GaN-based semiconductor devices and materials, Ga2O3 and related materials, photocathodes and microchannel plates, semiconductor quantum structures and devices, semiconductor materials and devices, metal and thin film mechanics, and silicon carbide semiconductor technologies.

Dupuis has authored several papers in various scientific journals. Notable recent publications include:

  • Effective Leakage Current Reduction in GaN Ultraviolet Avalanche Photodiodes With an Ion-Implantation Isolation Method, 2021, IEEE Transactions on Electron Devices
  • Design of Ion-Implanted Junction Termination Extension for Vertical GaN Pin Rectifiers, 2020, ECS Transactions
  • Breakdown characteristics of deep-ultraviolet Al0.6Ga0.4N p-i-n avalanche photodiodes, 2022, Journal of Applied Physics
  • 1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings, 2023, IEEE Transactions on Electron Devices
  • Flexible single-crystalline GaN substrate by direct deposition of III-N thin films on polycrystalline metal tape, 2020, Journal of Materials Chemistry C

Frequent coauthors collaborating with Dupuis include Theeradetch Detchprohm, Shyh-Chiang Shen, Zhiyu Xu, Minkyu Cho, and Marzieh Bakhtiary-Noodeh.

Dupuis has published multiple papers in key research venues, notably:

  • IEEE Transactions on Electron Devices
  • Journal of Crystal Growth
  • Journal of Applied Physics
  • Journal of Electronic Materials
  • Applied Physics Letters

In their academic contributions, Dupuis has also authored at least one book published by Springer International Publishing titled Gallium Nitride and Related Materials, scheduled for 2025 publication.

Best Publications

  • GaN avalanche photodiodes

    J. C. Carrano;D. J.H. Lambert;C. J. Eiting;C. J. Collins

  • Quantum-well heterostructure lasers

    Unknown

  • Growth of uniformly aligned ZnO nanowire heterojunction arrays on GaN, AlN, and Al0.5Ga0.5N substrates.

    Xudong Wang;Jinhui Song;Peng Li;Jae Hyun Ryou

  • Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells

    Jae-Hyun Ryou;P.D. Yoder;Jianping Liu;Z. Lochner

  • Comprehensive characterization of metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN

    J. C. Carrano;T. Li;P. A. Grudowski;C. J. Eiting

  • Ordered Nanowire Array Blue/Near-UV Light Emitting Diodes

    Sheng Xu;Chen Xu;Ying Liu;Youfan Hu

  • Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer

    Suk Choi;Hee Jin Kim;Seong-Soo Kim;Jianping Liu

  • Room‐temperature laser operation of quantum‐well Ga(1−x)AlxAs‐GaAs laser diodes grown by metalorganic chemical vapor deposition

    R. D. Dupuis;P. D. Dapkus;Nick Holonyak;E. A. Rezek

  • Toward the development of miniaturized imaging systems for detection of pre-cancer

    M.R. Descour;A.H.O. Karkkainen;J.D. Rogers;Chen Liang

  • Barrier effect on hole transport and carrier distribution in InGaN∕GaN multiple quantum well visible light-emitting diodes

    J. P. Liu;J.-H. Ryou;R. D. Dupuis;J. Han

  • Improved solar-blind detectivity using an AlxGa1−xN heterojunction p–i–n photodiode

    C. J. Collins;U. Chowdhury;M. M. Wong;B. Yang

  • Carrier collection in a semiconductor quantum well

    H. Shichijo;R.M. Kolbas;N. Holonyak;R.D. Dupuis

  • Very low dark current metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers

    J. C. Carrano;P. A. Grudowski;C. J. Eiting;R. D. Dupuis

  • Photonic crystal nanobeam lasers

    Y. Zhang;M. Khan;Y. Huang;J. Ryou

  • Gallium nitride and related materials

    F.A. Ponce;R.D. Dupuis;S. Nakamura;J.A. Edmond

  • GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition

    J. B. Limb;D. Yoo;J. H. Ryou;W. Lee

  • Density-controlled growth of aligned ZnO nanowires sharing a common contact : A simple, low-cost, and mask-free technique for large-scale applications

    Xudong Wang;Jinhui Song;Christopher J. Summers;Jae Hyun Ryou

  • Temperature dependence of threshold current for quantum‐well AlxGa1−xAs‐GaAs heterostructure laser diodes

    R. Chin;N. Holonyak;B. A. Vojak;K. Hess

  • Room‐temperature operation of Ga(1−x)AlxAs/GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition

    Unknown

  • Selective-area and lateral epitaxial overgrowth of III–N materials by metal organic chemical vapor deposition

    J. Park;P. A. Grudowski;C. J. Eiting;R. D. Dupuis

  • Back illuminated AlGaN solar-blind photodetectors

    D. J. H. Lambert;M. M. Wong;U. Chowdhury;C. Collins

  • Current transport mechanisms in GaN-based metal–semiconductor–metal photodetectors

    J. C. Carrano;T. Li;P. A. Grudowski;C. J. Eiting

  • Metalorganic Chemical Vapor Deposition of III-V Semiconductors

    Unknown

Frequent Co-Authors

Jae-Hyun Ryou
Jae-Hyun Ryou University of Houston
Theeradetch Detchprohm
Theeradetch Detchprohm Georgia Institute of Technology
Fernando Ponce
Fernando Ponce Arizona State University
Joe C. Campbell
Joe C. Campbell University of Virginia
N. Holonyak
N. Holonyak University of Illinois at Urbana-Champaign
Milton Feng
Milton Feng University of Illinois at Urbana-Champaign
Zuzanna Liliental-Weber
Zuzanna Liliental-Weber Lawrence Berkeley National Laboratory
Shun Lien Chuang
Shun Lien Chuang University of Illinois at Urbana-Champaign
Ian T. Ferguson
Ian T. Ferguson Kennesaw State University
Peter M. Asbeck
Peter M. Asbeck University of California, San Diego

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