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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
86
Citations
24914
World Ranking
367
National Ranking
174

Physics

D-Index
93
Citations
30823
World Ranking
2043
National Ranking
1052

Research.com Recognitions

  • 2018 - IEEE Jun-ichi Nishizawa Medal “For contributions to the development of high-speed, low-noise, long-wavelength avalanche photodiodes.”
  • 2015 - Fellow, National Academy of Inventors
  • 2002 - Member of the National Academy of Engineering For contributions to the development of high-speed, low-noise avalanche photodiodes.
  • 1990 - IEEE Fellow For contributions to semiconductor photo detectors for lightwave communication.

Overview

Joe C. Campbell is affiliated with the University of Virginia in the United States. Their research focuses primarily on engineering and physics, with a specialization in electrical and electronic engineering as well as atomic and molecular physics and optics. The core areas of study include semiconductor quantum structures and devices, advanced semiconductor detectors and materials, and advanced optical sensing technologies.

The scientist has an extensive publication record across various venues. Frequent places of publication include:

  • Applied Physics Letters
  • Journal of Lightwave Technology
  • Optics Express
  • arXiv (Cornell University)
  • Nature Photonics

Selected recent papers by Joe C. Campbell include:

  • Photonic chip-based low-noise microwave oscillator, 2024, Nature
  • Low-noise high-temperature AlInAsSb/GaSb avalanche photodiodes for 2-μm applications, 2020, Nature Photonics
  • Photon-trapping-enhanced avalanche photodiodes for mid-infrared applications, 2023, Nature Photonics
  • High gain, low noise 1550 nm GaAsSb/AlGaAsSb avalanche photodiodes, 2022, Optica
  • Evolution of Low-Noise Avalanche Photodetectors, 2021, IEEE Journal of Selected Topics in Quantum Electronics

The main topics of Joe C. Campbell's work cover:

  • Semiconductor Quantum Structures and Devices
  • Advanced Semiconductor Detectors and Materials
  • Advanced Optical Sensing Technologies
  • Photonic and Optical Devices
  • Advanced Photonic Communication Systems
  • Advanced Fiber Laser Technologies
  • Semiconductor Lasers and Optical Devices

Frequent co-authors include:

  • Andrew H. Jones
  • Seth R. Bank
  • Adam A. Dadey
  • J. Andrew McArthur
  • Bingtian Guo

Joe C. Campbell has been recognized with several awards and honors over their career. These include:

  • IEEE Jun-ichi Nishizawa Medal in 2018 for contributions to the development of high-speed, low-noise, long-wavelength avalanche photodiodes
  • Fellow of the National Academy of Inventors in 2015
  • Member of the National Academy of Engineering in 2002 for contributions to the development of high-speed, low-noise avalanche photodiodes
  • IEEE Fellow in 1990 for contributions to semiconductor photo detectors for lightwave communication

Best Publications

  • The Power of Myth

    Joseph Campbell;Bill D. Moyers;Betty S. Flowers

  • Myths to Live By

    Joseph Campbell

  • Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product

    Yimin Kang;Han-Din Liu;Han-Din Liu;Mike Morse;Mario J. Paniccia

  • GaN avalanche photodiodes

    J. C. Carrano;D. J.H. Lambert;C. J. Eiting;C. J. Collins

  • The Portable Jung

    C. G. Jung;Joseph Campbell

  • Der Heros in tausend Gestalten

    Joseph Campbell;Karl Koehne

  • Microstructured silicon photodetector

    Zhihong Huang;James E. Carey;Mingguo Liu;Xiangyi Guo

  • Thermal treatment studies of the photoluminescence intensity of porous silicon

    C. Tsai;K.‐H. Li;J. Sarathy;S. Shih

  • Correlation between silicon hydride species and the photoluminescence intensity of porous silicon

    C. Tsai;K. H. Li;D. S. Kinosky;R. Z. Qian

  • Recent Advances in Telecommunications Avalanche Photodiodes

    J.C. Campbell

  • The Masks of God : Primitive Mythology

    Joseph Campbell

  • Comprehensive characterization of metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN

    J. C. Carrano;T. Li;P. A. Grudowski;C. J. Eiting

  • Electrical and optical characterization of Sb : SnO2

    Yue-Song He;Joe C. Campbell;Robert C. Murphy;M.F. Arendt

  • High detectivity InAs quantum dot infrared photodetectors

    Eui-Tae Kim;Anupam Madhukar;Zhengmao Ye;Joe C. Campbell

  • High-performance avalanche photodiode with separate absorption ‘grading’ and multiplication regions

    J.C. Campbell;A.G. Dentai;W.S. Holden;B.L. Kasper

  • Recent advances in avalanche photodiodes

    J.C. Campbell;S. Demiguel;Feng Ma;A. Beck

  • High-Saturation-Current Modified Uni-Traveling-Carrier Photodiode With Cliff Layer

    Zhi Li;Huapu Pan;Hao Chen;Andreas Beling

  • Recent Advances in Avalanche Photodiodes

    Joe C. Campbell

  • The HgCdTe electron avalanche photodiode

    J. Beck;C. Wan;M. Kinch;J. Robinson

  • Resonant-cavity InGaAs-InAlAs avalanche photodiodes with gain-bandwidth product of 290 GHz

    C. Lenox;H. Nie;P. Yuan;G. Kinsey

  • Normal incidence InAs/AlxGa1−xAs quantum dot infrared photodetectors with undoped active region

    Zhonghui Chen;O. Baklenov;E. T. Kim;I. Mukhametzhanov

Frequent Co-Authors

Andreas Beling
Andreas Beling University of Virginia
Russell D. Dupuis
Russell D. Dupuis Georgia Institute of Technology
Seth R. Bank
Seth R. Bank The University of Texas at Austin
Scott A. Diddams
Scott A. Diddams University of Colorado Boulder
A.G. Dentai
A.G. Dentai Infinera (United States)
John E. Bowers
John E. Bowers University of California, Santa Barbara
Michael Wraback
Michael Wraback United States Army Research Laboratory
Anupam Madhukar
Anupam Madhukar University of Southern California
Malvin C. Teich
Malvin C. Teich Boston University
Keith J. Williams
Keith J. Williams United States Naval Research Laboratory

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