2018 - Benjamin Franklin Medal, Franklin Institute
2008 - Fellow of the Materials Research Society
2004 - Fellow of American Physical Society (APS) Citation For her pioneering work on optoelectronic quantum devices including quantum well infrared detectors, quantum cascade lasers, high power lasers, GaNGaAIN visible and UV emitters and detectors
2004 - OSA Fellows For pioneering work on optoelectronic quantum devices.
2000 - SPIE Fellow
The scientist’s investigation covers issues in Optoelectronics, Optics, Chemical vapor deposition, Photodetector and Laser. Her research on Optoelectronics often connects related topics like Continuous wave. Manijeh Razeghi interconnects Metalorganic vapour phase epitaxy, Thin film, Photoluminescence, Analytical chemistry and Sapphire in the investigation of issues within Chemical vapor deposition.
Her Photodetector research includes elements of Quantum dot, Ultraviolet and Photoconductivity. Her studies deal with areas such as Cascade and Heterojunction as well as Laser. Manijeh Razeghi focuses mostly in the field of Superlattice, narrowing it down to topics relating to Passivation and, in certain cases, Double heterostructure.
Her main research concerns Optoelectronics, Optics, Photodetector, Laser and Superlattice. She combines subjects such as Quantum well and Infrared with her study of Optoelectronics. The various areas that she examines in her Photodetector study include Quantum dot, Molecular beam epitaxy and Quantum well infrared photodetector.
Her research in Laser intersects with topics in Diode and Cascade. Her Superlattice research is multidisciplinary, incorporating perspectives in Semiconductor, Photodiode, Band gap and Indium arsenide. Her Chemical vapor deposition study combines topics from a wide range of disciplines, such as Metalorganic vapour phase epitaxy, Epitaxy, Photoluminescence, Analytical chemistry and Sapphire.
Manijeh Razeghi mainly investigates Optoelectronics, Superlattice, Photodetector, Laser and Presentation. Her research is interdisciplinary, bridging the disciplines of Infrared and Optoelectronics. Her Superlattice research includes elements of Photodiode, Molecular beam epitaxy and Heterojunction.
Her research investigates the connection between Photodetector and topics such as Avalanche photodiode that intersect with problems in Impact ionization. Her Laser research integrates issues from Power and Cascade. Her study in Quantum efficiency is interdisciplinary in nature, drawing from both Metalorganic vapour phase epitaxy and Operating temperature.
Manijeh Razeghi focuses on Optoelectronics, Photodetector, Superlattice, Quantum efficiency and Specific detectivity. Her Optoelectronics study incorporates themes from Infrared and Optics. Her work carried out in the field of Photodetector brings together such families of science as Quantum well, Avalanche photodiode, Antimonide and Indium arsenide.
Her work deals with themes such as Heterojunction, Biasing and Photodiode, which intersect with Superlattice. The Quantum efficiency study combines topics in areas such as Metalorganic vapour phase epitaxy, Operating temperature, Molecular beam epitaxy and Band gap. The study incorporates disciplines such as Substrate and Chemical vapor deposition in addition to Responsivity.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Semiconductor ultraviolet detectors
M. Razeghi;A. Rogalski;A. Rogalski.
Journal of Applied Physics (1996)
Optical and crystallographic properties and impurity incorporation of GaxIn1−xAs (0.44<x<0.49) grown by liquid phase epitaxy, vapor phase epitaxy, and metal organic chemical vapor deposition
K.‐H. Goetz;D. Bimberg;H. Jürgensen;J. Selders.
Journal of Applied Physics (1983)
Room temperature quantum cascade lasers with 27% wall plug efficiency
Y. Bai;N. Bandyopadhyay;S. Tsao;S. Slivken.
Applied Physics Letters (2011)
Dark current suppression in type II InAs∕GaSb superlattice long wavelength infrared photodiodes with M-structure barrier
Binh Minh Nguyen;Darin Hoffman;Pierre Yves Delaunay;Manijeh Razeghi.
Applied Physics Letters (2007)
Narrow-Gap Semiconductor Photodiodes
Antoni Rogalski;Manijeh Razeghi.
Short-wavelength solar-blind detectors-status, prospects, and markets
Proceedings of the IEEE (2002)
AlGaN ultraviolet photoconductors grown on sapphire
D. Walker;X. Zhang;P. Kung;A. Saxler.
Applied Physics Letters (1996)
Electroluminescence at 375nm from a ZnO∕GaN:Mg∕c-Al2O3 heterojunction light emitting diode
D. J. Rogers;F. Hosseini Teherani;A. Yasan;K. Minder.
Applied Physics Letters (2006)
High quality AIN and GaN epilayers grown on (00⋅1) sapphire, (100), and (111) silicon substrates
P. Kung;A. Saxler;X. Zhang;D. Walker.
Applied Physics Letters (1995)
The MOCVD Challenge: Volume 2: A Survey of GaInAsP-GaAs for Photonic and Electronic Device Applications
Profile was last updated on December 6th, 2021.
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