World's Best Scientists 2026 revealed!
Jean-Baptiste Rodriguez

Jean-Baptiste Rodriguez

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
38
Citations
4244
World Ranking
4995
National Ranking
93

Jean-Baptiste Rodriguez publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Jean-Baptiste Rodriguez sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 227 publications — 38th percentile

38% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Jean-Baptiste Rodriguez D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Jean-Baptiste Rodriguez sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 38 D-Index — 30th percentile

30% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Jean-Baptiste Rodriguez is affiliated with the University of Montpellier in France. Their research spans several fields and subfields primarily related to engineering and physics, with a focus on photonic and optical devices and semiconductor technologies.

The main fields of study include:

  • Engineering
  • Physics and Astronomy

Subfields of study cover:

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Spectroscopy
  • Materials Chemistry
  • Biomedical Engineering

The scientist's work addresses several key topics, including:

  • Photonic and Optical Devices
  • Semiconductor Quantum Structures and Devices
  • Semiconductor Lasers and Optical Devices
  • Spectroscopy and Laser Applications
  • Quantum and Electron Transport Phenomena
  • Advanced Semiconductor Detectors and Materials
  • Advanced Fiber Laser Technologies

Among frequently publishing venues are:

  • Optics Express
  • Journal of Applied Physics
  • arXiv (Cornell University)
  • Light Science & Applications
  • Optica

Frequent co-authors collaborating with Rodriguez include:

  • E. Tournié
  • L. Cerutti
  • Audrey Gilbert
  • А. Н. Баранов
  • G. Boissier

Recent papers published by Jean-Baptiste Rodriguez demonstrate work on semiconductor lasers epitaxially grown on silicon substrates and optical coupling techniques:

  • "Mid-infrared III-V semiconductor lasers epitaxially grown on Si substrates", 2022, Light Science & Applications
  • "Mid-infrared laser diodes epitaxially grown on on-axis (001) silicon", 2020, Optica
  • "Unlocking the monolithic integration scenario: optical coupling between GaSb diode lasers epitaxially grown on patterned Si substrates and passive SiN waveguides", 2023, Light Science & Applications
  • "Crystal Phase Control during Epitaxial Hybridization of III-V Semiconductors with Silicon", 2021, Advanced Electronic Materials
  • "InAs-based quantum cascade lasers grown on on-axis (001) silicon substrate", 2020, APL Photonics

Best Publications

  • nBn structure based on InAs /GaSb type-II strained layer superlattices

    J. B. Rodriguez;E. Plis;G. Bishop;Y. D. Sharma

  • Silicon-Based Photonic Integration Beyond the Telecommunication Wavelength Range

    Gunther Roelkens;Utsav Dave;Alban Gassenq;Nannicha Hattasan

  • MBE growth and characterization of type-II InAs/GaSb superlattices for mid-infrared detection

    J.B. Rodriguez;Philippe Christol;L. Cerutti;F. Chevrier

  • Mid-IR focal plane array based on type-II InAs /GaSb strain layer superlattice detector with nBn design

    H. S. Kim;E. Plis;J. B. Rodriguez;G. D. Bishop

  • Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm.

    Eva Ryckeboer;Alban Gassenq;Muhammad Muneeb;Nannicha Hattasan

  • Bias dependent dual band response from InAs∕Ga(In)Sb type II strain layer superlattice detectors

    A. Khoshakhlagh;J. B. Rodriguez;E. Plis;G. D. Bishop

  • Continuous-wave operation above room temperature of GaSb-based laser diodes grown on Si

    Jean-Rémy Reboul;Laurent Cerutti;Jean-Baptiste Rodriguez;Pierre Grech

  • Wet etching and chemical polishing of InAs/GaSb superlattice photodiodes

    R Chaghi;C Cervera;H Aït-Kaci;P Grech

  • Modeling of electrical characteristics of midwave type II InAs∕GaSb strain layer superlattice diodes

    V. Gopal;E. Plis;J.B. Rodriguez;C.E. Jones

  • Mid-infrared InAs/GaSb strained layer superlattice detectors with nBn design grown on a GaAs substrate

    E Plis;J B Rodriguez;G Balakrishnan;Y D Sharma

  • Silicon-based heterogeneous photonic integrated circuits for the mid-infrared

    Gunther Roelkens;Utsav Dave;Alban Gassenq;Nannicha Hattasan

  • Type II InAs∕GaSb strain layer superlattice detectors with p-on-n polarity

    E. Plis;J. B. Rodriguez;H. S. Kim;G. Bishop

  • Localized surface plasmon resonances in highly doped semiconductors nanostructures

    V. N'Tsame Guilengui;L. Cerutti;J.-B. Rodriguez;E. Tournié

  • Unambiguous determination of carrier concentration and mobility for InAs/GaSb superlattice photodiode optimization

    C. Cervera;J. B. Rodriguez;J. P. Perez;H. Ait-Kaci

  • Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates

    Unknown

  • Quantum cascade lasers grown on silicon

    A.N. Baranov;H. Nguyen-Van;Z. Loghmari;L. Cerutti

  • Interface analysis of InAs/GaSb superlattice grown by MBE

    B. Satpati;J.B. Rodriguez;A. Trampert;E. Tournié

  • GaSb-Based Laser, Monolithically Grown on Silicon Substrate, Emitting at 1.55 $\mu$ m at Room Temperature

    L. Cerutti;J.B. Rodriguez;E. Tournie

  • nBn detectors based on InAs∕GaSb type-II strain layer superlattice

    G. Bishop;E. Plis;J. B. Rodriguez;Y. D. Sharma

  • Characterization of midwave infrared InAs/GaSb superlattice photodiode

    C. Cervera;J. B. Rodriguez;R. Chaghi;H. Aït-Kaci

  • Interfacial intermixing in InAs/GaSb short-period-superlattices grown by molecular beam epitaxy

    E. Luna;B. Satpati;J. B. Rodriguez;A. N. Baranov

Frequent Co-Authors

Eric Tournié
Eric Tournié University of Montpellier
Gilles Patriarche
Gilles Patriarche Centre national de la recherche scientifique, CNRS
Sanjay Krishna
Sanjay Krishna The Ohio State University
Achim Trampert
Achim Trampert Paul Drude Institute for Solid State Electronics
Elena Plis
Elena Plis Georgia Institute of Technology
Gunther Roelkens
Gunther Roelkens Ghent University
Roel Baets
Roel Baets Ghent University
Goran Z. Mashanovich
Goran Z. Mashanovich University of Southampton
Richard M. Osgood
Richard M. Osgood Columbia University

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