D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 32 Citations 4,038 158 World Ranking 4460 National Ranking 1667

Overview

What is she best known for?

The fields of study Elena Plis is best known for:

  • Semiconductor
  • Band gap
  • Transistor

Her Superlattice research encompasses a variety of disciplines, including Band gap and Heterojunction. Elena Plis applies her multidisciplinary studies on Band gap and Photodetector in her research. Elena Plis integrates Heterojunction with Superlattice in her research. Elena Plis merges Optoelectronics with Infrared in her research. Her work blends Infrared and Photodetector studies together. Many of her studies involve connections with topics such as Epitaxy and Nanotechnology. Elena Plis incorporates Epitaxy and Semiconductor in her studies. In her research, Elena Plis performs multidisciplinary study on Semiconductor and Nanoscopic scale. Elena Plis undertakes multidisciplinary studies into Nanoscopic scale and Nanotechnology in her work.

Her most cited work include:

  • Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors (370 citations)
  • nBn structure based on InAs∕GaSb type-II strained layer superlattices (212 citations)
  • Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers (117 citations)

What are the main themes of her work throughout her whole career to date

Passivation, Polyimide and Epitaxy are all intrinsically tied to her study in Layer (electronics). Her research on Epitaxy frequently links to adjacent areas such as Nanotechnology. Nanotechnology is closely attributed to Passivation in her research. Elena Plis is doing genetic studies as part of her Dark current and Responsivity and Photodetector investigations. Elena Plis performs integrative study on Responsivity and Photodetector. A component of her Detector study involves Dark current and Infrared detector. Her research links Detector with Infrared detector. As part of her studies on Optoelectronics, Elena Plis frequently links adjacent subjects like Indium arsenide. Her Superlattice study typically links adjacent topics like Gallium antimonide.

Elena Plis most often published in these fields:

  • Optoelectronics (91.57%)
  • Superlattice (63.86%)
  • Optics (54.22%)

What were the highlights of her more recent work (between 2016-2019)?

  • Nuclear physics (72.73%)
  • Layer (electronics) (63.64%)
  • Polyimide (63.64%)

In recent works Elena Plis was focusing on the following fields of study:

Current (fluid) and Thermal are all intertwined in Thermodynamics research. Much of her study explores Thermal relationship to Thermodynamics. Elena Plis undertakes multidisciplinary investigations into Nuclear physics and Nuclear engineering in her work. Borrowing concepts from Nuclear physics, she weaves in ideas under Nuclear engineering. Her Nanotechnology research extends to the thematically linked field of Layer (electronics). Her work on Nanotechnology is being expanded to include thematically relevant topics such as Layer (electronics). Elena Plis integrates several fields in her works, including Polyimide and Kapton. In her research, she undertakes multidisciplinary study on Kapton and Polyimide. She regularly links together related areas like Absorption (acoustics) in her Composite material studies.

Between 2016 and 2019, her most popular works were:

  • Review of Radiation-Induced Effects in Polyimide (51 citations)
  • Chemical dynamics characteristics of Kapton polyimide damaged by electron beam irradiation (31 citations)
  • Chemical and Electrical Dynamics of Polyimide Film Damaged by Electron Radiation (27 citations)

In her most recent research, the most cited works focused on:

  • Polyimide
  • Kapton
  • Electron

In her work, Elena Plis performs multidisciplinary research in Electron and Cathode ray. Her research brings together the fields of Nuclear physics and Cathode ray. Her studies link Electron beam processing with Nuclear physics. She merges Electron beam processing with Electron in her research. Her research on Polyimide frequently connects to adjacent areas such as Layer (electronics). Many of her studies on Layer (electronics) apply to Kapton as well. In her research, Elena Plis undertakes multidisciplinary study on Kapton and Polyimide. Her work on Beam (structure) expands to the thematically related Optics. Her work in Beam (structure) is not limited to one particular discipline; it also encompasses Optics.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors

Hyunhyub Ko;Kuniharu Takei;Kuniharu Takei;Rehan Kapadia;Rehan Kapadia;Steven Chuang;Steven Chuang.
Nature (2010)

452 Citations

nBn structure based on InAs /GaSb type-II strained layer superlattices

J. B. Rodriguez;E. Plis;G. Bishop;Y. D. Sharma.
Applied Physics Letters (2007)

306 Citations

Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers

N. Gautam;H. S. Kim;M. N. Kutty;E. Plis.
Applied Physics Letters (2010)

160 Citations

Mid-IR focal plane array based on type-II InAs /GaSb strain layer superlattice detector with nBn design

H. S. Kim;E. Plis;J. B. Rodriguez;G. D. Bishop.
Applied Physics Letters (2008)

136 Citations

Bias dependent dual band response from InAs∕Ga(In)Sb type II strain layer superlattice detectors

A. Khoshakhlagh;J. B. Rodriguez;E. Plis;G. D. Bishop.
Applied Physics Letters (2007)

115 Citations

Quantum Confinement Effects in Nanoscale-Thickness InAs Membranes

Kuniharu Takei;Kuniharu Takei;Hui Fang;Hui Fang;S. Bala Kumar;Rehan Kapadia;Rehan Kapadia.
Nano Letters (2011)

110 Citations

InAs/GaSb Type-II Superlattice Detectors

Elena A. Plis.
Advances in Optoelectronics (2014)

105 Citations

Ultrathin body InAs tunneling field-effect transistors on Si substrates

Alexandra C. Ford;Alexandra C. Ford;Chun Wing Yeung;Steven Chuang;Steven Chuang;Ha Sul Kim;Ha Sul Kim.
Applied Physics Letters (2011)

105 Citations

III–V Complementary Metal–Oxide–Semiconductor Electronics on Silicon Substrates

Junghyo Nah;Hui Fang;Hui Fang;Chuan Wang;Chuan Wang;Kuniharu Takei;Kuniharu Takei.
Nano Letters (2012)

103 Citations

Nanoscale InGaSb heterostructure membranes on Si substrates for high hole mobility transistors.

Kuniharu Takei;Morten Madsen;Morten Madsen;Hui Fang;Hui Fang;Rehan Kapadia;Rehan Kapadia.
Nano Letters (2012)

102 Citations

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