Her Superlattice research encompasses a variety of disciplines, including Band gap and Heterojunction. Elena Plis applies her multidisciplinary studies on Band gap and Photodetector in her research. Elena Plis integrates Heterojunction with Superlattice in her research. Elena Plis merges Optoelectronics with Infrared in her research. Her work blends Infrared and Photodetector studies together. Many of her studies involve connections with topics such as Epitaxy and Nanotechnology. Elena Plis incorporates Epitaxy and Semiconductor in her studies. In her research, Elena Plis performs multidisciplinary study on Semiconductor and Nanoscopic scale. Elena Plis undertakes multidisciplinary studies into Nanoscopic scale and Nanotechnology in her work.
Passivation, Polyimide and Epitaxy are all intrinsically tied to her study in Layer (electronics). Her research on Epitaxy frequently links to adjacent areas such as Nanotechnology. Nanotechnology is closely attributed to Passivation in her research. Elena Plis is doing genetic studies as part of her Dark current and Responsivity and Photodetector investigations. Elena Plis performs integrative study on Responsivity and Photodetector. A component of her Detector study involves Dark current and Infrared detector. Her research links Detector with Infrared detector. As part of her studies on Optoelectronics, Elena Plis frequently links adjacent subjects like Indium arsenide. Her Superlattice study typically links adjacent topics like Gallium antimonide.
Current (fluid) and Thermal are all intertwined in Thermodynamics research. Much of her study explores Thermal relationship to Thermodynamics. Elena Plis undertakes multidisciplinary investigations into Nuclear physics and Nuclear engineering in her work. Borrowing concepts from Nuclear physics, she weaves in ideas under Nuclear engineering. Her Nanotechnology research extends to the thematically linked field of Layer (electronics). Her work on Nanotechnology is being expanded to include thematically relevant topics such as Layer (electronics). Elena Plis integrates several fields in her works, including Polyimide and Kapton. In her research, she undertakes multidisciplinary study on Kapton and Polyimide. She regularly links together related areas like Absorption (acoustics) in her Composite material studies.
In her work, Elena Plis performs multidisciplinary research in Electron and Cathode ray. Her research brings together the fields of Nuclear physics and Cathode ray. Her studies link Electron beam processing with Nuclear physics. She merges Electron beam processing with Electron in her research. Her research on Polyimide frequently connects to adjacent areas such as Layer (electronics). Many of her studies on Layer (electronics) apply to Kapton as well. In her research, Elena Plis undertakes multidisciplinary study on Kapton and Polyimide. Her work on Beam (structure) expands to the thematically related Optics. Her work in Beam (structure) is not limited to one particular discipline; it also encompasses Optics.
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Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors
Hyunhyub Ko;Kuniharu Takei;Kuniharu Takei;Rehan Kapadia;Rehan Kapadia;Steven Chuang;Steven Chuang.
Nature (2010)
nBn structure based on InAs /GaSb type-II strained layer superlattices
J. B. Rodriguez;E. Plis;G. Bishop;Y. D. Sharma.
Applied Physics Letters (2007)
Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers
N. Gautam;H. S. Kim;M. N. Kutty;E. Plis.
Applied Physics Letters (2010)
Mid-IR focal plane array based on type-II InAs /GaSb strain layer superlattice detector with nBn design
H. S. Kim;E. Plis;J. B. Rodriguez;G. D. Bishop.
Applied Physics Letters (2008)
Bias dependent dual band response from InAs∕Ga(In)Sb type II strain layer superlattice detectors
A. Khoshakhlagh;J. B. Rodriguez;E. Plis;G. D. Bishop.
Applied Physics Letters (2007)
Quantum Confinement Effects in Nanoscale-Thickness InAs Membranes
Kuniharu Takei;Kuniharu Takei;Hui Fang;Hui Fang;S. Bala Kumar;Rehan Kapadia;Rehan Kapadia.
Nano Letters (2011)
InAs/GaSb Type-II Superlattice Detectors
Elena A. Plis.
Advances in Optoelectronics (2014)
Ultrathin body InAs tunneling field-effect transistors on Si substrates
Alexandra C. Ford;Alexandra C. Ford;Chun Wing Yeung;Steven Chuang;Steven Chuang;Ha Sul Kim;Ha Sul Kim.
Applied Physics Letters (2011)
III–V Complementary Metal–Oxide–Semiconductor Electronics on Silicon Substrates
Junghyo Nah;Hui Fang;Hui Fang;Chuan Wang;Chuan Wang;Kuniharu Takei;Kuniharu Takei.
Nano Letters (2012)
Nanoscale InGaSb heterostructure membranes on Si substrates for high hole mobility transistors.
Kuniharu Takei;Morten Madsen;Morten Madsen;Hui Fang;Hui Fang;Rehan Kapadia;Rehan Kapadia.
Nano Letters (2012)
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