World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
37
Citations
4967
World Ranking
5184
National Ranking
1795

Overview

Elena Plis is affiliated with the Georgia Institute of Technology in the United States. Their research primarily focuses on engineering and materials science, with significant contributions to aerospace engineering, polymers and plastics, materials chemistry, electrical and electronic engineering, as well as astronomy and astrophysics.

Their work covers several main topics, including:

  • Silicone and Siloxane Chemistry
  • Polymer Nanocomposite Synthesis and Irradiation
  • Space Satellite Systems and Control
  • Spacecraft Design and Technology
  • Ionosphere and magnetosphere dynamics
  • Radiation Effects in Electronics
  • TiO2 Photocatalysis and Solar Cells

Publication venues frequently featuring the scientist's work include:

  • The Journal of the Astronautical Sciences
  • Journal of Spacecraft and Rockets
  • IEEE Transactions on Plasma Science
  • AIAA SCITECH 2023 Forum
  • AIAA Scitech 2021 Forum

Recent papers authored or co-authored by Elena Plis include:

  • "Study of the optical property degradation of white thermal control coatings under high energy electron irradiation" (2022) published in Surface and Coatings Technology
  • "Effect of Simulated GEO Environment on the Properties of Solar Panel Coverglasses" (2021) published in IEEE Transactions on Plasma Science
  • "Spectroscopic behavior of various materials in a GEO simulated environment" (2021) published in Acta Astronautica
  • "Optical Properties of Thermal Control Coatings after Exposure to 90 keV Electrons" (2020) published in The Journal of the Astronautical Sciences
  • "Characterization of novel spacecraft materials under high energy electron and atomic oxygen exposure" (2022) published in AIAA SCITECH 2022 Forum

Frequent co-authors collaborating with Elena Plis are:

  • Dale C. Ferguson
  • Ryan Hoffmann
  • Daniel P. Engelhart
  • Miles Bengtson
  • Jainisha Shah

Best Publications

  • Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors

    Hyunhyub Ko;Kuniharu Takei;Kuniharu Takei;Rehan Kapadia;Rehan Kapadia;Steven Chuang;Steven Chuang

  • nBn structure based on InAs /GaSb type-II strained layer superlattices

    J. B. Rodriguez;E. Plis;G. Bishop;Y. D. Sharma

  • Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers

    N. Gautam;H. S. Kim;M. N. Kutty;E. Plis

  • Mid-IR focal plane array based on type-II InAs /GaSb strain layer superlattice detector with nBn design

    H. S. Kim;E. Plis;J. B. Rodriguez;G. D. Bishop

  • InAs/GaSb Type-II Superlattice Detectors

    Elena A. Plis

  • Bias dependent dual band response from InAs∕Ga(In)Sb type II strain layer superlattice detectors

    A. Khoshakhlagh;J. B. Rodriguez;E. Plis;G. D. Bishop

  • Quantum Confinement Effects in Nanoscale-Thickness InAs Membranes

    Kuniharu Takei;Kuniharu Takei;Hui Fang;Hui Fang;S. Bala Kumar;Rehan Kapadia;Rehan Kapadia

  • Ultrathin body InAs tunneling field-effect transistors on Si substrates

    Alexandra C. Ford;Alexandra C. Ford;Chun Wing Yeung;Steven Chuang;Steven Chuang;Ha Sul Kim;Ha Sul Kim

  • III–V Complementary Metal–Oxide–Semiconductor Electronics on Silicon Substrates

    Junghyo Nah;Hui Fang;Hui Fang;Chuan Wang;Chuan Wang;Kuniharu Takei;Kuniharu Takei

  • Nanoscale InGaSb heterostructure membranes on Si substrates for high hole mobility transistors.

    Kuniharu Takei;Morten Madsen;Morten Madsen;Hui Fang;Hui Fang;Rehan Kapadia;Rehan Kapadia

  • Quantum of optical absorption in two-dimensional semiconductors

    Hui Fang;Hui Fang;Hans A. Bechtel;Elena Plis;Michael C. Martin

  • Self-Aligned, Extremely High Frequency III–V Metal-Oxide-Semiconductor Field-Effect Transistors on Rigid and Flexible Substrates

    Chuan Wang;Jun Chau Chien;Hui Fang;Kuniharu Takei

  • Review of Radiation-Induced Effects in Polyimide

    Elena A. Plis;Daniel P. Engelhart;Russell Cooper;W. Robert Johnston

  • Modeling of electrical characteristics of midwave type II InAs∕GaSb strain layer superlattice diodes

    V. Gopal;E. Plis;J.B. Rodriguez;C.E. Jones

  • Mid-infrared InAs/GaSb strained layer superlattice detectors with nBn design grown on a GaAs substrate

    E Plis;J B Rodriguez;G Balakrishnan;Y D Sharma

  • Type II InAs∕GaSb strain layer superlattice detectors with p-on-n polarity

    E. Plis;J. B. Rodriguez;H. S. Kim;G. Bishop

  • Midwave infrared type-II InAs∕GaSb superlattice detectors with mixed interfaces

    E. Plis;S. Annamalai;K. T. Posani;S. Krishna

  • Performance improvement of InAs/GaSb strained layer superlattice detectors by reducing surface leakage currents with SU-8 passivation

    H. S. Kim;E. Plis;A. Khoshakhlagh;S. Myers

  • Passivation techniques for InAs/GaSb strained layer superlattice detectors

    Elena A. Plis;Maya Narayanan Kutty;Sanjay Krishna

  • InAs/InAsSb strain balanced superlattices for optical detectors: Material properties and energy band simulations

    D. Lackner;M. Steger;M. L. W. Thewalt;O. J. Pitts

Frequent Co-Authors

Sanjay Krishna
Sanjay Krishna The Ohio State University
Ali Javey
Ali Javey University of California, Berkeley
Jean-Baptiste Rodriguez
Jean-Baptiste Rodriguez University of Montpellier
Kuniharu Takei
Kuniharu Takei Osaka Metropolitan University
Lorenzo Faraone
Lorenzo Faraone University of Western Australia
Yu-Lun Chueh
Yu-Lun Chueh National Tsing Hua University
Antoni Rogalski
Antoni Rogalski Military University of Technology in Warsaw
John P. R. David
John P. R. David University of Sheffield
Chuan Wang
Chuan Wang Washington University in St. Louis
Jamie D. Phillips
Jamie D. Phillips University of Delaware

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