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Mitsuru Takenaka

Mitsuru Takenaka

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
51
Citations
10998
World Ranking
2648
National Ranking
93

Materials Science

D-Index
51
Citations
10863
World Ranking
9823
National Ranking
588

Overview

Mitsuru Takenaka is affiliated with the University of Tokyo in Japan and is active in the field of engineering, with a specific focus on electrical and electronic engineering. Their research spans multiple subfields including artificial intelligence, materials chemistry, atomic and molecular physics and optics, and biomedical engineering.

The scientist's work covers several main topics related to semiconductor materials and devices, photonic and optical devices, advancements in semiconductor devices and circuit design, ferroelectric and negative capacitance devices, neural networks and reservoir computing, advanced memory and neural computing, and optical network technologies.

Frequent publication venues for Mitsuru Takenaka include the Japanese Journal of Applied Physics, IEEE Transactions on Electron Devices, Optics Express, ECS Transactions, and ECS Meeting Abstracts.

They have coauthored extensively with several researchers, including Shinichi Takagi, Kasidit Toprasertpong, Kei Sumita, Eishin Nako, and Ryosho Nakane.

Recent papers authored or coauthored by Mitsuru Takenaka include:

  • Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf0.5Zr0.5O2 Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 nm for Embedded Ferroelectric Memory, 2022, ACS Applied Materials & Interfaces
  • Si Microring Resonator Crossbar Array for On-Chip Inference and Training of the Optical Neural Network, 2022, ACS Photonics
  • High responsivity in MoS2 phototransistors based on charge trapping HfO2 dielectrics, 2020, Communications Materials
  • Improved Ferroelectric/Semiconductor Interface Properties in Hf0.5Zr0.5O2 Ferroelectric FETs by Low-Temperature Annealing, 2020, IEEE Electron Device Letters
  • Reservoir computing on a silicon platform with a ferroelectric field-effect transistor, 2022, Communications Engineering

Best Publications

  • Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

    S. Takagi;T. Iisawa;T. Tezuka;T. Numata

  • Evidence of low interface trap density in GeO2∕Ge metal-oxide-semiconductor structures fabricated by thermal oxidation

    Hiroshi Matsubara;Takashi Sasada;Mitsuru Takenaka;Shinichi Takagi

  • High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using $\hbox{HfO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GeO}_{x}/\hbox{Ge}$ Gate Stacks Fabricated by Plasma Postoxidation

    Rui Zhang;Po-Chin Huang;Ju-Chin Lin;N. Taoka

  • Al2O3/GeOx/Ge gate stacks with low interface trap density fabricated by electron cyclotron resonance plasma postoxidation

    R. Zhang;T. Iwasaki;N. Taoka;M. Takenaka

  • Efficient low-loss InGaAsP/Si hybrid MOS optical modulator

    Jae-Hoon Han;Jae-Hoon Han;Frederic Boeuf;Junichi Fujikata;Shigeki Takahashi

  • High-Mobility Ge pMOSFET With 1-nm EOT $\hbox{Al}_{2} \hbox{O}_{3}/\hbox{GeO}_{x}/\hbox{Ge}$ Gate Stack Fabricated by Plasma Post Oxidation

    Rui Zhang;T. Iwasaki;N. Taoka;M. Takenaka

  • High performance GeO 2 /Ge nMOSFETs with source/drain junctions formed by gas phase doping

    Kiyohito Morii;Takashi Iwasaki;Ryosho Nakane;Mitsuru Takenaka

  • All-optical flip-flop multimode interference bistable laser diode

    M. Takenaka;M. Raburn;Y. Nakano

  • 1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density

    R. Suzuki;N. Taoka;M. Yokoyama;S. Lee

  • Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf0.5Zr0.5O2 Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 nm for Embedded Ferroelectric Memory.

    Unknown

  • High-Performance $\hbox{GeO}_{2}/\hbox{Ge}$ nMOSFETs With Source/Drain Junctions Formed by Gas-Phase Doping

    K Morii;T Iwasaki;R Nakane;M Takenaka

  • Surface orientation dependence of interface properties of GeO2/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation

    Takashi Sasada;Yosuke Nakakita;Mitsuru Takenaka;Shinichi Takagi

  • Si microring resonator crossbar array for on-chip inference and training of optical neural network.

    Shuhei Ohno;Kasidit Toprasertpong;Shinichi Takagi;Mitsuru Takenaka

  • Thin Body III–V-Semiconductor-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding

    Masafumi Yokoyama;Tetsuji Yasuda;Hideki Takagi;Hisashi Yamada

  • Dark current reduction of Ge photodetector by GeO_2 surface passivation and gas-phase doping

    Mitsuru Takenaka;Kiyohito Morii;Masakazu Sugiyama;Yoshiaki Nakano

  • Direct Observation of Interface Charge Behaviors in FeFET by Quasi-Static Split C-V and Hall Techniques: Revealing FeFET Operation

    K. Toprasertpong;M. Takenaka;S. Takagi

  • III–V/Ge channel MOS device technologies in nano CMOS era

    Shinichi Takagi;Rui Zhang;Rui Zhang;Junkyo Suh;Sang-Hyeon Kim;Sang-Hyeon Kim

  • Evaluation of polarization characteristics in metal/ferroelectric/semiconductor capacitors and ferroelectric field-effect transistors

    Kasidit Toprasertpong;Kento Tahara;Mitsuru Takenaka;Shinichi Takagi

  • 1-nm-thick EOT high mobility Ge n- and p-MOSFETs with ultrathin GeO x /Ge MOS interfaces fabricated by plasma post oxidation

    Rui Zhang;Noriyuki Taoka;Po-Chin Huang;Mitsuru Takenaka

  • Novel Ge waveguide platform on Ge-on-insulator wafer for mid-infrared photonic integrated circuits.

    Jian Kang;Mitsuru Takenaka;Shinichi Takagi

  • High Ion/Ioff and low subthreshold slope planar-type InGaAs tunnel field effect transistors with Zn-diffused source junctions

    Munetaka Noguchi;SangHyeon Kim;Masafumi Yokoyama;Osamu Ichikawa

  • III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier scattering at the bottom interface

    Masafumi Yokoyama;Tetsuji Yasuda;Hideki Takagi;Noriyuki Miyata

  • High mobility CMOS technologies using III–V/Ge channels on Si platform

    S. Takagi;S.-H. Kim;M. Yokoyama;R. Zhang

  • Multimode interference bistable laser diode

    M. Takenaka;Y. Nakano

Frequent Co-Authors

Shinichi Takagi
Shinichi Takagi University of Tokyo
Yoshiaki Nakano
Yoshiaki Nakano University of Tokyo
Hitoshi Tabata
Hitoshi Tabata University of Tokyo
Tetsuya Mizumoto
Tetsuya Mizumoto Tokyo Institute of Technology
Hon Ki Tsang
Hon Ki Tsang Chinese University of Hong Kong
Shigehisa Arai
Shigehisa Arai Tokyo Institute of Technology
Naoharu Sugiyama
Naoharu Sugiyama Nagoya University
Tsutomu Tezuka
Tsutomu Tezuka Toshiba (Japan)
Hiroyuki Fujita
Hiroyuki Fujita Tokyo City University

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