World's Best Scientists 2026 revealed!
Mitsuru Takenaka

Mitsuru Takenaka

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
51
Citations
10998
World Ranking
2648
National Ranking
93

Materials Science

D-Index
51
Citations
10863
World Ranking
9821
National Ranking
588

Mitsuru Takenaka publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Mitsuru Takenaka sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 772 publications — 96th percentile

96% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Mitsuru Takenaka D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Mitsuru Takenaka sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 51 D-Index — 63rd percentile

63% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Mitsuru Takenaka is affiliated with the University of Tokyo in Japan and is active in the field of engineering, with a specific focus on electrical and electronic engineering. Their research spans multiple subfields including artificial intelligence, materials chemistry, atomic and molecular physics and optics, and biomedical engineering.

The scientist's work covers several main topics related to semiconductor materials and devices, photonic and optical devices, advancements in semiconductor devices and circuit design, ferroelectric and negative capacitance devices, neural networks and reservoir computing, advanced memory and neural computing, and optical network technologies.

Frequent publication venues for Mitsuru Takenaka include the Japanese Journal of Applied Physics, IEEE Transactions on Electron Devices, Optics Express, ECS Transactions, and ECS Meeting Abstracts.

They have coauthored extensively with several researchers, including Shinichi Takagi, Kasidit Toprasertpong, Kei Sumita, Eishin Nako, and Ryosho Nakane.

Recent papers authored or coauthored by Mitsuru Takenaka include:

  • Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf0.5Zr0.5O2 Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 nm for Embedded Ferroelectric Memory, 2022, ACS Applied Materials & Interfaces
  • Si Microring Resonator Crossbar Array for On-Chip Inference and Training of the Optical Neural Network, 2022, ACS Photonics
  • High responsivity in MoS2 phototransistors based on charge trapping HfO2 dielectrics, 2020, Communications Materials
  • Improved Ferroelectric/Semiconductor Interface Properties in Hf0.5Zr0.5O2 Ferroelectric FETs by Low-Temperature Annealing, 2020, IEEE Electron Device Letters
  • Reservoir computing on a silicon platform with a ferroelectric field-effect transistor, 2022, Communications Engineering

Best Publications

  • Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

    S. Takagi;T. Iisawa;T. Tezuka;T. Numata

  • Evidence of low interface trap density in GeO2∕Ge metal-oxide-semiconductor structures fabricated by thermal oxidation

    Hiroshi Matsubara;Takashi Sasada;Mitsuru Takenaka;Shinichi Takagi

  • High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using $\hbox{HfO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GeO}_{x}/\hbox{Ge}$ Gate Stacks Fabricated by Plasma Postoxidation

    Rui Zhang;Po-Chin Huang;Ju-Chin Lin;N. Taoka

  • Al2O3/GeOx/Ge gate stacks with low interface trap density fabricated by electron cyclotron resonance plasma postoxidation

    R. Zhang;T. Iwasaki;N. Taoka;M. Takenaka

  • Efficient low-loss InGaAsP/Si hybrid MOS optical modulator

    Jae-Hoon Han;Jae-Hoon Han;Frederic Boeuf;Junichi Fujikata;Shigeki Takahashi

  • High-Mobility Ge pMOSFET With 1-nm EOT $\hbox{Al}_{2} \hbox{O}_{3}/\hbox{GeO}_{x}/\hbox{Ge}$ Gate Stack Fabricated by Plasma Post Oxidation

    Rui Zhang;T. Iwasaki;N. Taoka;M. Takenaka

  • High performance GeO 2 /Ge nMOSFETs with source/drain junctions formed by gas phase doping

    Kiyohito Morii;Takashi Iwasaki;Ryosho Nakane;Mitsuru Takenaka

  • All-optical flip-flop multimode interference bistable laser diode

    M. Takenaka;M. Raburn;Y. Nakano

  • 1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density

    R. Suzuki;N. Taoka;M. Yokoyama;S. Lee

  • Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf0.5Zr0.5O2 Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 nm for Embedded Ferroelectric Memory.

    Unknown

  • High-Performance $\hbox{GeO}_{2}/\hbox{Ge}$ nMOSFETs With Source/Drain Junctions Formed by Gas-Phase Doping

    K Morii;T Iwasaki;R Nakane;M Takenaka

  • Surface orientation dependence of interface properties of GeO2/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation

    Takashi Sasada;Yosuke Nakakita;Mitsuru Takenaka;Shinichi Takagi

  • Si microring resonator crossbar array for on-chip inference and training of optical neural network.

    Shuhei Ohno;Kasidit Toprasertpong;Shinichi Takagi;Mitsuru Takenaka

  • Thin Body III–V-Semiconductor-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding

    Masafumi Yokoyama;Tetsuji Yasuda;Hideki Takagi;Hisashi Yamada

  • Dark current reduction of Ge photodetector by GeO_2 surface passivation and gas-phase doping

    Mitsuru Takenaka;Kiyohito Morii;Masakazu Sugiyama;Yoshiaki Nakano

  • Direct Observation of Interface Charge Behaviors in FeFET by Quasi-Static Split C-V and Hall Techniques: Revealing FeFET Operation

    K. Toprasertpong;M. Takenaka;S. Takagi

  • III–V/Ge channel MOS device technologies in nano CMOS era

    Shinichi Takagi;Rui Zhang;Rui Zhang;Junkyo Suh;Sang-Hyeon Kim;Sang-Hyeon Kim

  • Evaluation of polarization characteristics in metal/ferroelectric/semiconductor capacitors and ferroelectric field-effect transistors

    Kasidit Toprasertpong;Kento Tahara;Mitsuru Takenaka;Shinichi Takagi

  • 1-nm-thick EOT high mobility Ge n- and p-MOSFETs with ultrathin GeO x /Ge MOS interfaces fabricated by plasma post oxidation

    Rui Zhang;Noriyuki Taoka;Po-Chin Huang;Mitsuru Takenaka

  • Novel Ge waveguide platform on Ge-on-insulator wafer for mid-infrared photonic integrated circuits.

    Jian Kang;Mitsuru Takenaka;Shinichi Takagi

  • High Ion/Ioff and low subthreshold slope planar-type InGaAs tunnel field effect transistors with Zn-diffused source junctions

    Munetaka Noguchi;SangHyeon Kim;Masafumi Yokoyama;Osamu Ichikawa

  • III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier scattering at the bottom interface

    Masafumi Yokoyama;Tetsuji Yasuda;Hideki Takagi;Noriyuki Miyata

  • High mobility CMOS technologies using III–V/Ge channels on Si platform

    S. Takagi;S.-H. Kim;M. Yokoyama;R. Zhang

  • Multimode interference bistable laser diode

    M. Takenaka;Y. Nakano

Frequent Co-Authors

Shinichi Takagi
Shinichi Takagi University of Tokyo
Yoshiaki Nakano
Yoshiaki Nakano University of Tokyo
Hitoshi Tabata
Hitoshi Tabata University of Tokyo
Tetsuya Mizumoto
Tetsuya Mizumoto Tokyo Institute of Technology
Hon Ki Tsang
Hon Ki Tsang Chinese University of Hong Kong
Shigehisa Arai
Shigehisa Arai Tokyo Institute of Technology
Naoharu Sugiyama
Naoharu Sugiyama Nagoya University
Tsutomu Tezuka
Tsutomu Tezuka Toshiba (Japan)
Hiroyuki Fujita
Hiroyuki Fujita Tokyo City University

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