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Tsutomu Tezuka

Tsutomu Tezuka

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
38
Citations
7277
World Ranking
4845
National Ranking
193

Overview

Tsutomu Tezuka is affiliated with Toshiba in Japan and has contributed extensively to research in Environmental Science and Engineering. Their work shows a strong focus on the intersections of water, energy, and sustainability, reflecting multidisciplinary interests in both applied and theoretical aspects of these fields.

The main fields of study for this researcher include Environmental Science, with 14 publications, and Engineering, comprising 8 publications. Their subfields encompass Water Science and Technology, Electrical and Electronic Engineering, Pollution, Industrial and Manufacturing Engineering, and Economics and Econometrics.

Tezuka's research addresses a variety of key topics such as Water-Energy-Food Nexus Studies, Energy and Environment Impacts, Climate Change Policy and Economics, Hybrid Renewable Energy Systems, Sustainability and Climate Change Governance, Recycling and Waste Management Techniques, and Integrated Energy Systems Optimization.

Their recent papers include the following publications:

  • "3.2 Megapixel 3D-Stacked Charge Focusing SPAD for Low-Light Imaging and Depth Sensing" (2021), published in 2021 IEEE International Electron Devices Meeting (IEDM)
  • "The Role of Renewable Energy Resources in Sustainability of Water Desalination as a Potential Fresh-Water Source: An Updated Review" (2020), published in Sustainability
  • "An Integrated Planning Framework for Sustainable Water and Energy Supply" (2020), published in Sustainability
  • "The economic synergies of modelling the renewable energy-water nexus towards sustainability" (2020), published in Renewable Energy
  • "Multiple Streams and Power Sector Policy Change: Evidence from the Feed-in Tariff Policy Process in Japan" (2020), published in Politics & Policy

Frequent co-authors working closely with Tezuka include Benjamin McLellan, Esmaeil Ahmadi, Behnam Mohammadi-Ivatloo, Seiichi Ogata, and Yugo Tanaka. Their collaborations have contributed to diverse research outputs in related fields.

Tezuka's publications often appear in venues such as Energies, Sustainability, Renewable Energy, Energy Research & Social Science, and the IEEE International Electron Devices Meeting (IEDM). These platforms suggest an engagement with interdisciplinary and applied research communities.

Best Publications

  • Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

    S. Takagi;T. Iisawa;T. Tezuka;T. Numata

  • Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction

    T. Tezuka;N. Sugiyama;S. Takagi

  • Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique

    Shu Nakaharai;Tsutomu Tezuka;Naoharu Sugiyama;Yoshihiko Moriyama

  • Semiconductor device and method of manufacturing substrate

    Naoharu Sugiyama;Atsushi Kurobe;Tsutomu Tezuka;Tomohisa Mizuno

  • Si-SiGe semiconductor device and method of fabricating the same

    Seiji Imai;Yoshiko Hiraoka;Atsushi Kurobe;Naoharu Sugiyama

  • A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100 nm Strained Silicon-on-Insulator MOSFETs

    Tsutomu Tezuka;Naoharu Sugiyama;Tomohisa Mizuno;Masamichi Suzuki

  • Semiconductor device and fabrication method thereof

    Keiji Ikeda;Tsutomu Tezuka;Yoshihiko Moriyama

  • Field Effect Transistor and Method for Manufacturing the Same

    Tsutomu Tezuka;Eiji Toyoda

  • Device structures and carrier transport properties of advanced CMOS using high mobility channels

    S. Takagi;S. Takagi;T. Tezuka;T. Irisawa;S. Nakaharai

  • Semiconductor memory device having multilayer group IV nanocrystal quantum dot floating gate and method of manufacturing the same

    Naoharu Sugiyama;Tsutomu Tezuka;Riichi Katoh;Atsushi Kurobe

  • High mobility Ge-on-insulator p-channel MOSFETs using Pt germanide Schottky source/drain

    T. Maeda;K. Ikeda;S. Nakaharai;T. Tezuka

  • High-mobility strained SiGe-on-insulator pMOSFETs with Ge-rich surface channels fabricated by local condensation technique

    T. Tezuka;S. Nakaharai;Y. Moriyama;N. Sugiyama

  • Field effect transistor, integrated circuit element, and method for manufacturing the same

    Tsutomu Tezuka;Toshifumi Irisawa

  • Channel structure design, fabrication and carrier transport properties of strained-Si/SiGe-on-insulator (strained-SOI) MOSFETs

    S. Takagi;T. Mizuno;T. Tezuka;N. Sugiyama

  • [110]-surface strained-SOI CMOS devices

    T. Mizuno;N. Sugiyama;T. Tezuka;Y. Moriyama

  • High-performance strained Si-on-insulator MOSFETs by novel fabrication processes utilizing Ge-condensation technique

    T. Tezuka;N. Sugiyama;T. Mizuno;S. Takagi

  • High-performance strained-SOI CMOS devices using thin film SiGe-on-insulator technology

    T. Mizuno;N. Sugiyama;T. Tezuka;T. Numata

  • Temperature effects on Ge condensation by thermal oxidation of SiGe-on-insulator structures

    N. Sugiyama;T. Tezuka;T. Mizuno;M. Suzuki

  • Ultrathin body SiGe-on-insulator pMOSFETs with high-mobility SiGe surface channels

    T. Tezuka;N. Sugiyama;T. Mizuno;S. Takagi

  • Quantum dot memory cell

    Tsutomu Tezuka;Atsushi Kurobe

  • Sub-band structure engineering for advanced CMOS channels

    Shin Ichi Takagi;T. Mizuno;T. Tezuka;N. Sugiyama

Frequent Co-Authors

Shinichi Takagi
Shinichi Takagi University of Tokyo
Naoharu Sugiyama
Naoharu Sugiyama Nagoya University
Junji Koga
Junji Koga Toshiba (Japan)
Mitsuru Takenaka
Mitsuru Takenaka University of Tokyo

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