World's Best Scientists 2026 revealed!
Tsutomu Tezuka

Tsutomu Tezuka

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
38
Citations
7277
World Ranking
4845
National Ranking
193

Tsutomu Tezuka publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Tsutomu Tezuka sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 243 publications — 43rd percentile

43% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Tsutomu Tezuka D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Tsutomu Tezuka sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 38 D-Index — 30th percentile

30% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Tsutomu Tezuka is affiliated with Toshiba in Japan and has contributed extensively to research in Environmental Science and Engineering. Their work shows a strong focus on the intersections of water, energy, and sustainability, reflecting multidisciplinary interests in both applied and theoretical aspects of these fields.

The main fields of study for this researcher include Environmental Science, with 14 publications, and Engineering, comprising 8 publications. Their subfields encompass Water Science and Technology, Electrical and Electronic Engineering, Pollution, Industrial and Manufacturing Engineering, and Economics and Econometrics.

Tezuka's research addresses a variety of key topics such as Water-Energy-Food Nexus Studies, Energy and Environment Impacts, Climate Change Policy and Economics, Hybrid Renewable Energy Systems, Sustainability and Climate Change Governance, Recycling and Waste Management Techniques, and Integrated Energy Systems Optimization.

Their recent papers include the following publications:

  • "3.2 Megapixel 3D-Stacked Charge Focusing SPAD for Low-Light Imaging and Depth Sensing" (2021), published in 2021 IEEE International Electron Devices Meeting (IEDM)
  • "The Role of Renewable Energy Resources in Sustainability of Water Desalination as a Potential Fresh-Water Source: An Updated Review" (2020), published in Sustainability
  • "An Integrated Planning Framework for Sustainable Water and Energy Supply" (2020), published in Sustainability
  • "The economic synergies of modelling the renewable energy-water nexus towards sustainability" (2020), published in Renewable Energy
  • "Multiple Streams and Power Sector Policy Change: Evidence from the Feed-in Tariff Policy Process in Japan" (2020), published in Politics & Policy

Frequent co-authors working closely with Tezuka include Benjamin McLellan, Esmaeil Ahmadi, Behnam Mohammadi-Ivatloo, Seiichi Ogata, and Yugo Tanaka. Their collaborations have contributed to diverse research outputs in related fields.

Tezuka's publications often appear in venues such as Energies, Sustainability, Renewable Energy, Energy Research & Social Science, and the IEEE International Electron Devices Meeting (IEDM). These platforms suggest an engagement with interdisciplinary and applied research communities.

Best Publications

  • Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

    S. Takagi;T. Iisawa;T. Tezuka;T. Numata

  • Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction

    T. Tezuka;N. Sugiyama;S. Takagi

  • Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique

    Shu Nakaharai;Tsutomu Tezuka;Naoharu Sugiyama;Yoshihiko Moriyama

  • Semiconductor device and method of manufacturing substrate

    Naoharu Sugiyama;Atsushi Kurobe;Tsutomu Tezuka;Tomohisa Mizuno

  • Si-SiGe semiconductor device and method of fabricating the same

    Seiji Imai;Yoshiko Hiraoka;Atsushi Kurobe;Naoharu Sugiyama

  • A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100 nm Strained Silicon-on-Insulator MOSFETs

    Tsutomu Tezuka;Naoharu Sugiyama;Tomohisa Mizuno;Masamichi Suzuki

  • Semiconductor device and fabrication method thereof

    Keiji Ikeda;Tsutomu Tezuka;Yoshihiko Moriyama

  • Field Effect Transistor and Method for Manufacturing the Same

    Tsutomu Tezuka;Eiji Toyoda

  • Device structures and carrier transport properties of advanced CMOS using high mobility channels

    S. Takagi;S. Takagi;T. Tezuka;T. Irisawa;S. Nakaharai

  • Semiconductor memory device having multilayer group IV nanocrystal quantum dot floating gate and method of manufacturing the same

    Naoharu Sugiyama;Tsutomu Tezuka;Riichi Katoh;Atsushi Kurobe

  • High mobility Ge-on-insulator p-channel MOSFETs using Pt germanide Schottky source/drain

    T. Maeda;K. Ikeda;S. Nakaharai;T. Tezuka

  • High-mobility strained SiGe-on-insulator pMOSFETs with Ge-rich surface channels fabricated by local condensation technique

    T. Tezuka;S. Nakaharai;Y. Moriyama;N. Sugiyama

  • Field effect transistor, integrated circuit element, and method for manufacturing the same

    Tsutomu Tezuka;Toshifumi Irisawa

  • Channel structure design, fabrication and carrier transport properties of strained-Si/SiGe-on-insulator (strained-SOI) MOSFETs

    S. Takagi;T. Mizuno;T. Tezuka;N. Sugiyama

  • [110]-surface strained-SOI CMOS devices

    T. Mizuno;N. Sugiyama;T. Tezuka;Y. Moriyama

  • High-performance strained Si-on-insulator MOSFETs by novel fabrication processes utilizing Ge-condensation technique

    T. Tezuka;N. Sugiyama;T. Mizuno;S. Takagi

  • High-performance strained-SOI CMOS devices using thin film SiGe-on-insulator technology

    T. Mizuno;N. Sugiyama;T. Tezuka;T. Numata

  • Temperature effects on Ge condensation by thermal oxidation of SiGe-on-insulator structures

    N. Sugiyama;T. Tezuka;T. Mizuno;M. Suzuki

  • Ultrathin body SiGe-on-insulator pMOSFETs with high-mobility SiGe surface channels

    T. Tezuka;N. Sugiyama;T. Mizuno;S. Takagi

  • Quantum dot memory cell

    Tsutomu Tezuka;Atsushi Kurobe

  • Sub-band structure engineering for advanced CMOS channels

    Shin Ichi Takagi;T. Mizuno;T. Tezuka;N. Sugiyama

Frequent Co-Authors

Shinichi Takagi
Shinichi Takagi University of Tokyo
Naoharu Sugiyama
Naoharu Sugiyama Nagoya University
Junji Koga
Junji Koga Toshiba (Japan)
Mitsuru Takenaka
Mitsuru Takenaka University of Tokyo
Akira Toriumi
Akira Toriumi University of Tokyo

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