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Aaron R. Arehart

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 40 4557 4374 1612 1508 137 5495

Aaron R. Arehart publications per year

The chart shows the history of publications by Aaron R. Arehart between 2001 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Aaron R. Arehart published across 25 years, from 2001 to 2025, averaging 6.6 papers a year. Output peaked at 20 publications in 2020. 12 of the 164 publications appeared in the last two years.

No. of publications
5 10 15 20
Bar chart. Horizontal axis: year, 2001 to 2025. Vertical axis: number of publications, 0 to 20. Peak 20 publications in 2020. 2001: 3 publications 2002: 1 publication 2003: 4 publications 2004: 2 publications 2005: 3 publications 2006: 1 publication 2007: 1 publication 2008: 3 publications 2009: 3 publications 2010: 4 publications 2011: 3 publications 2012: 7 publications 2013: 6 publications 2014: 6 publications 2015: 10 publications 2016: 14 publications 2017: 14 publications 2018: 13 publications 2019: 17 publications 2020: 20 publications 2021: 3 publications 2022: 5 publications 2023: 9 publications 2024: 6 publications 2025: 6 publications
2001 2025

164 publications in total across all disciplines

View publications per year as a table
Aaron R. Arehart: publications per year, 2001 to 2025
Year Publications
2001 3
2002 1
2003 4
2004 2
2005 3
2006 1
2007 1
2008 3
2009 3
2010 4
2011 3
2012 7
2013 6
2014 6
2015 10
2016 14
2017 14
2018 13
2019 17
2020 20
2021 3
2022 5
2023 9
2024 6
2025 6
Total 164
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Aaron R. Arehart publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Aaron R. Arehart sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 134–153 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 137 publications — 11th percentile

11% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355 137
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Aaron R. Arehart D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Aaron R. Arehart sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 40 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 40 D-Index — 36th percentile

36% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205 40
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Overview

Aaron R. Arehart is affiliated with The Ohio State University in the United States. Their research primarily focuses on materials science and engineering, with significant contributions in the subfields of materials chemistry, electronic, optical and magnetic materials, electrical and electronic engineering, renewable energy and sustainability, as well as condensed matter physics.

The scientist's work extensively covers key topics including Ga2O3 and related materials, ZnO doping and properties, advanced photocatalysis techniques, chalcogenide semiconductor thin films, quantum dots synthesis and properties, GaN-based semiconductor devices and materials, and semiconductor materials and interfaces.

Recent publications demonstrate ongoing activity in these research areas with papers such as:

  • β-Gallium oxide power electronics, 2022, APL Materials
  • Probing Charge Transport and Background Doping in Metal-Organic Chemical Vapor Deposition-Grown (010) β-Ga2O3, 2020, physica status solidi (RRL) - Rapid Research Letters
  • High electron density β-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer, 2020, Journal of Applied Physics
  • Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition, 2020, APL Materials
  • Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices, 2020, Journal of Applied Physics

These publications are distributed in several frequent venues, including:

  • Journal of Applied Physics
  • APL Materials
  • Applied Physics Letters
  • arXiv (Cornell University)
  • Solar RRL

Collaboration is a notable feature of their research, with frequent coauthors including Steven A. Ringel, Hongping Zhao, Joe F. McGlone, A F M Anhar Uddin Bhuiyan, and Siddharth Rajan. These collaborations indicate multidisciplinary and multi-institutional engagement within the fields of materials science and semiconductor research.

The scope of Aaron R. Arehart's research spans the synthesis, characterization, and application of semiconductor materials, with particular attention to gallium oxide-based compounds and their electronic properties. The work on modulation doping, charge transport, and defect state characterization helps to advance understanding of these materials for use in power electronics and other device applications.

Best Publications

  • Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor

    Sriram Krishnamoorthy;Zhanbo Xia;Chandan Joishi;Yuewei Zhang

  • Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy

    Z. Zhang;E. Farzana;A. R. Arehart;S. A. Ringel

  • Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor

    Sriram Krishnamoorthy;Zhanbo Xia;Chandan Joishi;Chandan Joishi;Yuewei Zhang

  • Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon

    A. Armstrong;A. R. Arehart;D. Green;U. K. Mishra

  • Influence of metal choice on (010) β-Ga2O3 Schottky diode properties

    Esmat Farzana;Zeng Zhang;Pran K. Paul;Aaron R. Arehart

  • $eta$ -Ga 2 O 3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz

    Zhanbo Xia;Hao Xue;Chandan Joishi;Joe Mcglone

  • Effect of threading dislocation density on Ni∕n-GaN Schottky diode I-V characteristics

    A. R. Arehart;B. Moran;J. S. Speck;U. K. Mishra

  • Impact of deep level defects induced by high energy neutron radiation in β-Ga2O3

    Esmat Farzana;Max F. Chaiken;Thomas E. Blue;Aaron R. Arehart

  • Deep level optical and thermal spectroscopy of traps in n-GaN grown by ammonia molecular beam epitaxy

    A. R. Arehart;A. Corrion;C. Poblenz;J. S. Speck

  • Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy

    Esmat Farzana;Elaheh Ahmadi;James S. Speck;Aaron R. Arehart

  • Effects of Applied Bias and High Field Stress on the Radiation Response of GaN/AlGaN HEMTs

    Jin Chen;Yevgeniy S. Puzyrev;Rong Jiang;En Xia Zhang

  • Trapping Effects in Si $\delta$ -Doped $eta$ -Ga 2 O 3 MESFETs on an Fe-Doped $eta$ -Ga 2 O 3 Substrate

    Joe F. Mcglone;Zhanbo Xia;Yuewei Zhang;Chandan Joishi

  • Spatially-resolved spectroscopic measurements of Ec − 0.57 eV traps in AlGaN/GaN high electron mobility transistors

    D. W. Cardwell;A. Sasikumar;A. R. Arehart;S. W. Kaun

  • Unusual Formation of Point Defect Complexes in the Ultra-wide Band Gap Semiconductor beta-Ga2O3

    Jared M. Johnson;Zhen Chen;Joel B. Varley;Christine M. Jackson

  • Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy

    A. Hierro;A. R. Arehart;B. Heying;M. Hansen

  • Impact of proton irradiation on deep level states in n-GaN

    Z. Zhang;A. R. Arehart;E. Cinkilic;J. Chen

  • Breakdown Characteristics of $eta$ -(Al 0.22 Ga 0.78 ) 2 O 3 /Ga 2 O 3 Field-Plated Modulation-Doped Field-Effect Transistors

    Chandan Joishi;Yuewei Zhang;Zhanbo Xia;Wenyuan Sun

  • Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field

    Zhanbo Xia;Hareesh Chandrasekar;Wyatt Moore;Caiyu Wang

  • High electron density β -(Al 0.17 Ga 0.83 ) 2 O 3 /Ga 2 O 3 modulation doping using an ultra-thin (1 nm) spacer layer

    Nidhin Kurian Kalarickal;Zhanbo Xia;Joe F. McGlone;Yumo Liu

  • Evaluation of Low-Temperature Saturation Velocity in $eta$ -(Al x Ga 1–x ) 2 O 3 /Ga 2 O 3 Modulation-Doped Field-Effect Transistors

    Yuewei Zhang;Zhanbo Xia;Joe Mcglone;Wenyuan Sun

  • Electrical characterization of n-type Al0.30Ga0.70N Schottky diodes

    A. R. Arehart;A. A. Allerman;S. A. Ringel

  • Capture Kinetics of Electron Traps in MBE-Grown n-GaN

    A. Hierro;A.R. Arehart;B. Heying;M. Hansen

  • Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition

    Hemant Ghadi;Joe F. McGlone;Christine M. Jackson;Esmat Farzana

  • Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors

    A.R. Arehart;A. Sasikumar;S. Rajan;G.D. Via

  • Metal$/BaTiO_{3}/eta-Ga_{2}O_{3}$ Dielectric Heterojunction Diode with 5.7 MV/cm Breakdown Field

    Zhanbo Xia;Hareesh Chandrasekar;Wyatt Moore;Caiyu Wang

Frequent Co-Authors

Steven A. Ringel
Steven A. Ringel The Ohio State University
James S. Speck
James S. Speck University of California, Santa Barbara
Siddharth Rajan
Siddharth Rajan The Ohio State University
Umesh K. Mishra
Umesh K. Mishra University of California, Santa Barbara
Steven P. DenBaars
Steven P. DenBaars University of California, Santa Barbara
Hongping Zhao
Hongping Zhao The Ohio State University
Ronald D. Schrimpf
Ronald D. Schrimpf Vanderbilt University
Daniel M. Fleetwood
Daniel M. Fleetwood Vanderbilt University
Angus Rockett
Angus Rockett Colorado School of Mines
Andrew M. Armstrong
Andrew M. Armstrong Sandia National Laboratories

External Links

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Best Scientists Citing Aaron R. Arehart

Fan Ren

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University of Florida

Publications: 65

Stephen J. Pearton

Stephen J. Pearton

University of Florida

Publications: 64

A. Y. Polyakov

A. Y. Polyakov

National University of Science and Technology

Publications: 54

James S. Speck

James S. Speck

University of California, Santa Barbara

Publications: 48

Sriram Krishnamoorthy

Sriram Krishnamoorthy

University of California, Santa Barbara

Publications: 47

Siddharth Rajan

Siddharth Rajan

The Ohio State University

Publications: 47

Enrico Zanoni

Enrico Zanoni

University of Padua

Publications: 39

Gaudenzio Meneghesso

Gaudenzio Meneghesso

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Publications: 39

Matteo Meneghini

Matteo Meneghini

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Publications: 37

Yue Hao

Yue Hao

Xidian University

Publications: 36

Andrew M. Armstrong

Andrew M. Armstrong

Sandia National Laboratories

Publications: 34

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Publications: 30

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Publications: 28

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