World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
40
Citations
5495
World Ranking
4557
National Ranking
1611

Overview

Aaron R. Arehart is affiliated with The Ohio State University in the United States. Their research primarily focuses on materials science and engineering, with significant contributions in the subfields of materials chemistry, electronic, optical and magnetic materials, electrical and electronic engineering, renewable energy and sustainability, as well as condensed matter physics.

The scientist's work extensively covers key topics including Ga2O3 and related materials, ZnO doping and properties, advanced photocatalysis techniques, chalcogenide semiconductor thin films, quantum dots synthesis and properties, GaN-based semiconductor devices and materials, and semiconductor materials and interfaces.

Recent publications demonstrate ongoing activity in these research areas with papers such as:

  • β-Gallium oxide power electronics, 2022, APL Materials
  • Probing Charge Transport and Background Doping in Metal-Organic Chemical Vapor Deposition-Grown (010) β-Ga2O3, 2020, physica status solidi (RRL) - Rapid Research Letters
  • High electron density β-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer, 2020, Journal of Applied Physics
  • Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition, 2020, APL Materials
  • Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices, 2020, Journal of Applied Physics

These publications are distributed in several frequent venues, including:

  • Journal of Applied Physics
  • APL Materials
  • Applied Physics Letters
  • arXiv (Cornell University)
  • Solar RRL

Collaboration is a notable feature of their research, with frequent coauthors including Steven A. Ringel, Hongping Zhao, Joe F. McGlone, A F M Anhar Uddin Bhuiyan, and Siddharth Rajan. These collaborations indicate multidisciplinary and multi-institutional engagement within the fields of materials science and semiconductor research.

The scope of Aaron R. Arehart's research spans the synthesis, characterization, and application of semiconductor materials, with particular attention to gallium oxide-based compounds and their electronic properties. The work on modulation doping, charge transport, and defect state characterization helps to advance understanding of these materials for use in power electronics and other device applications.

Best Publications

  • Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor

    Sriram Krishnamoorthy;Zhanbo Xia;Chandan Joishi;Yuewei Zhang

  • Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy

    Z. Zhang;E. Farzana;A. R. Arehart;S. A. Ringel

  • Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor

    Sriram Krishnamoorthy;Zhanbo Xia;Chandan Joishi;Chandan Joishi;Yuewei Zhang

  • Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon

    A. Armstrong;A. R. Arehart;D. Green;U. K. Mishra

  • Influence of metal choice on (010) β-Ga2O3 Schottky diode properties

    Esmat Farzana;Zeng Zhang;Pran K. Paul;Aaron R. Arehart

  • $eta$ -Ga 2 O 3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz

    Zhanbo Xia;Hao Xue;Chandan Joishi;Joe Mcglone

  • Effect of threading dislocation density on Ni∕n-GaN Schottky diode I-V characteristics

    A. R. Arehart;B. Moran;J. S. Speck;U. K. Mishra

  • Impact of deep level defects induced by high energy neutron radiation in β-Ga2O3

    Esmat Farzana;Max F. Chaiken;Thomas E. Blue;Aaron R. Arehart

  • Deep level optical and thermal spectroscopy of traps in n-GaN grown by ammonia molecular beam epitaxy

    A. R. Arehart;A. Corrion;C. Poblenz;J. S. Speck

  • Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy

    Esmat Farzana;Elaheh Ahmadi;James S. Speck;Aaron R. Arehart

  • Effects of Applied Bias and High Field Stress on the Radiation Response of GaN/AlGaN HEMTs

    Jin Chen;Yevgeniy S. Puzyrev;Rong Jiang;En Xia Zhang

  • Trapping Effects in Si $\delta$ -Doped $eta$ -Ga 2 O 3 MESFETs on an Fe-Doped $eta$ -Ga 2 O 3 Substrate

    Joe F. Mcglone;Zhanbo Xia;Yuewei Zhang;Chandan Joishi

  • Spatially-resolved spectroscopic measurements of Ec − 0.57 eV traps in AlGaN/GaN high electron mobility transistors

    D. W. Cardwell;A. Sasikumar;A. R. Arehart;S. W. Kaun

  • Unusual Formation of Point Defect Complexes in the Ultra-wide Band Gap Semiconductor beta-Ga2O3

    Jared M. Johnson;Zhen Chen;Joel B. Varley;Christine M. Jackson

  • Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy

    A. Hierro;A. R. Arehart;B. Heying;M. Hansen

  • Impact of proton irradiation on deep level states in n-GaN

    Z. Zhang;A. R. Arehart;E. Cinkilic;J. Chen

  • Breakdown Characteristics of $eta$ -(Al 0.22 Ga 0.78 ) 2 O 3 /Ga 2 O 3 Field-Plated Modulation-Doped Field-Effect Transistors

    Chandan Joishi;Yuewei Zhang;Zhanbo Xia;Wenyuan Sun

  • Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field

    Zhanbo Xia;Hareesh Chandrasekar;Wyatt Moore;Caiyu Wang

  • High electron density β -(Al 0.17 Ga 0.83 ) 2 O 3 /Ga 2 O 3 modulation doping using an ultra-thin (1 nm) spacer layer

    Nidhin Kurian Kalarickal;Zhanbo Xia;Joe F. McGlone;Yumo Liu

  • Evaluation of Low-Temperature Saturation Velocity in $eta$ -(Al x Ga 1–x ) 2 O 3 /Ga 2 O 3 Modulation-Doped Field-Effect Transistors

    Yuewei Zhang;Zhanbo Xia;Joe Mcglone;Wenyuan Sun

  • Electrical characterization of n-type Al0.30Ga0.70N Schottky diodes

    A. R. Arehart;A. A. Allerman;S. A. Ringel

  • Capture Kinetics of Electron Traps in MBE-Grown n-GaN

    A. Hierro;A.R. Arehart;B. Heying;M. Hansen

  • Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition

    Hemant Ghadi;Joe F. McGlone;Christine M. Jackson;Esmat Farzana

  • Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors

    A.R. Arehart;A. Sasikumar;S. Rajan;G.D. Via

  • Metal$/BaTiO_{3}/eta-Ga_{2}O_{3}$ Dielectric Heterojunction Diode with 5.7 MV/cm Breakdown Field

    Zhanbo Xia;Hareesh Chandrasekar;Wyatt Moore;Caiyu Wang

Frequent Co-Authors

Steven A. Ringel
Steven A. Ringel The Ohio State University
James S. Speck
James S. Speck University of California, Santa Barbara
Siddharth Rajan
Siddharth Rajan The Ohio State University
Umesh K. Mishra
Umesh K. Mishra University of California, Santa Barbara
Steven P. DenBaars
Steven P. DenBaars University of California, Santa Barbara
Hongping Zhao
Hongping Zhao The Ohio State University
Ronald D. Schrimpf
Ronald D. Schrimpf Vanderbilt University
Daniel M. Fleetwood
Daniel M. Fleetwood Vanderbilt University
Angus Rockett
Angus Rockett Colorado School of Mines
Andrew M. Armstrong
Andrew M. Armstrong Sandia National Laboratories

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