World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
40
Citations
5495
World Ranking
4557
National Ranking
1612

Aaron R. Arehart publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Aaron R. Arehart sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 137 publications — 11th percentile

11% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Aaron R. Arehart D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Aaron R. Arehart sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 40 D-Index — 36th percentile

36% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Aaron R. Arehart is affiliated with The Ohio State University in the United States. Their research primarily focuses on materials science and engineering, with significant contributions in the subfields of materials chemistry, electronic, optical and magnetic materials, electrical and electronic engineering, renewable energy and sustainability, as well as condensed matter physics.

The scientist's work extensively covers key topics including Ga2O3 and related materials, ZnO doping and properties, advanced photocatalysis techniques, chalcogenide semiconductor thin films, quantum dots synthesis and properties, GaN-based semiconductor devices and materials, and semiconductor materials and interfaces.

Recent publications demonstrate ongoing activity in these research areas with papers such as:

  • β-Gallium oxide power electronics, 2022, APL Materials
  • Probing Charge Transport and Background Doping in Metal-Organic Chemical Vapor Deposition-Grown (010) β-Ga2O3, 2020, physica status solidi (RRL) - Rapid Research Letters
  • High electron density β-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer, 2020, Journal of Applied Physics
  • Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition, 2020, APL Materials
  • Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices, 2020, Journal of Applied Physics

These publications are distributed in several frequent venues, including:

  • Journal of Applied Physics
  • APL Materials
  • Applied Physics Letters
  • arXiv (Cornell University)
  • Solar RRL

Collaboration is a notable feature of their research, with frequent coauthors including Steven A. Ringel, Hongping Zhao, Joe F. McGlone, A F M Anhar Uddin Bhuiyan, and Siddharth Rajan. These collaborations indicate multidisciplinary and multi-institutional engagement within the fields of materials science and semiconductor research.

The scope of Aaron R. Arehart's research spans the synthesis, characterization, and application of semiconductor materials, with particular attention to gallium oxide-based compounds and their electronic properties. The work on modulation doping, charge transport, and defect state characterization helps to advance understanding of these materials for use in power electronics and other device applications.

Best Publications

  • Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor

    Sriram Krishnamoorthy;Zhanbo Xia;Chandan Joishi;Yuewei Zhang

  • Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy

    Z. Zhang;E. Farzana;A. R. Arehart;S. A. Ringel

  • Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor

    Sriram Krishnamoorthy;Zhanbo Xia;Chandan Joishi;Chandan Joishi;Yuewei Zhang

  • Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon

    A. Armstrong;A. R. Arehart;D. Green;U. K. Mishra

  • Influence of metal choice on (010) β-Ga2O3 Schottky diode properties

    Esmat Farzana;Zeng Zhang;Pran K. Paul;Aaron R. Arehart

  • $eta$ -Ga 2 O 3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz

    Zhanbo Xia;Hao Xue;Chandan Joishi;Joe Mcglone

  • Effect of threading dislocation density on Ni∕n-GaN Schottky diode I-V characteristics

    A. R. Arehart;B. Moran;J. S. Speck;U. K. Mishra

  • Impact of deep level defects induced by high energy neutron radiation in β-Ga2O3

    Esmat Farzana;Max F. Chaiken;Thomas E. Blue;Aaron R. Arehart

  • Deep level optical and thermal spectroscopy of traps in n-GaN grown by ammonia molecular beam epitaxy

    A. R. Arehart;A. Corrion;C. Poblenz;J. S. Speck

  • Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy

    Esmat Farzana;Elaheh Ahmadi;James S. Speck;Aaron R. Arehart

  • Effects of Applied Bias and High Field Stress on the Radiation Response of GaN/AlGaN HEMTs

    Jin Chen;Yevgeniy S. Puzyrev;Rong Jiang;En Xia Zhang

  • Trapping Effects in Si $\delta$ -Doped $eta$ -Ga 2 O 3 MESFETs on an Fe-Doped $eta$ -Ga 2 O 3 Substrate

    Joe F. Mcglone;Zhanbo Xia;Yuewei Zhang;Chandan Joishi

  • Spatially-resolved spectroscopic measurements of Ec − 0.57 eV traps in AlGaN/GaN high electron mobility transistors

    D. W. Cardwell;A. Sasikumar;A. R. Arehart;S. W. Kaun

  • Unusual Formation of Point Defect Complexes in the Ultra-wide Band Gap Semiconductor beta-Ga2O3

    Jared M. Johnson;Zhen Chen;Joel B. Varley;Christine M. Jackson

  • Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy

    A. Hierro;A. R. Arehart;B. Heying;M. Hansen

  • Impact of proton irradiation on deep level states in n-GaN

    Z. Zhang;A. R. Arehart;E. Cinkilic;J. Chen

  • Breakdown Characteristics of $eta$ -(Al 0.22 Ga 0.78 ) 2 O 3 /Ga 2 O 3 Field-Plated Modulation-Doped Field-Effect Transistors

    Chandan Joishi;Yuewei Zhang;Zhanbo Xia;Wenyuan Sun

  • Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field

    Zhanbo Xia;Hareesh Chandrasekar;Wyatt Moore;Caiyu Wang

  • High electron density β -(Al 0.17 Ga 0.83 ) 2 O 3 /Ga 2 O 3 modulation doping using an ultra-thin (1 nm) spacer layer

    Nidhin Kurian Kalarickal;Zhanbo Xia;Joe F. McGlone;Yumo Liu

  • Evaluation of Low-Temperature Saturation Velocity in $eta$ -(Al x Ga 1–x ) 2 O 3 /Ga 2 O 3 Modulation-Doped Field-Effect Transistors

    Yuewei Zhang;Zhanbo Xia;Joe Mcglone;Wenyuan Sun

  • Electrical characterization of n-type Al0.30Ga0.70N Schottky diodes

    A. R. Arehart;A. A. Allerman;S. A. Ringel

  • Capture Kinetics of Electron Traps in MBE-Grown n-GaN

    A. Hierro;A.R. Arehart;B. Heying;M. Hansen

  • Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition

    Hemant Ghadi;Joe F. McGlone;Christine M. Jackson;Esmat Farzana

  • Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors

    A.R. Arehart;A. Sasikumar;S. Rajan;G.D. Via

  • Metal$/BaTiO_{3}/eta-Ga_{2}O_{3}$ Dielectric Heterojunction Diode with 5.7 MV/cm Breakdown Field

    Zhanbo Xia;Hareesh Chandrasekar;Wyatt Moore;Caiyu Wang

Frequent Co-Authors

Steven A. Ringel
Steven A. Ringel The Ohio State University
James S. Speck
James S. Speck University of California, Santa Barbara
Siddharth Rajan
Siddharth Rajan The Ohio State University
Umesh K. Mishra
Umesh K. Mishra University of California, Santa Barbara
Steven P. DenBaars
Steven P. DenBaars University of California, Santa Barbara
Hongping Zhao
Hongping Zhao The Ohio State University
Ronald D. Schrimpf
Ronald D. Schrimpf Vanderbilt University
Daniel M. Fleetwood
Daniel M. Fleetwood Vanderbilt University
Angus Rockett
Angus Rockett Colorado School of Mines
Andrew M. Armstrong
Andrew M. Armstrong Sandia National Laboratories

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