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D-Index & Metrics

Materials Science

D-Index
59
Citations
12107
World Ranking
7393
National Ranking
1832

Angus Rockett publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Angus Rockett sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 349 publications — 70th percentile

70% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Angus Rockett D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Angus Rockett sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 59 D-Index — 44th percentile

44% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Angus Rockett is affiliated with the Colorado School of Mines in the United States. Their research spans multiple aspects of materials science and engineering, with a focus on semiconductor and photovoltaic materials.

Their work is primarily concentrated in the fields of Materials Science and Engineering, with significant contributions to subfields including Materials Chemistry, Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, Renewable Energy, Sustainability and the Environment, and Polymers and Plastics.

Rockett's main research topics cover a range of semiconductor and nanomaterial-related areas, such as:

  • Chalcogenide Semiconductor Thin Films
  • Quantum Dots Synthesis And Properties
  • Copper-based nanomaterials and applications
  • Semiconductor materials and interfaces
  • Perovskite Materials and Applications
  • Advanced Photocatalysis Techniques
  • Silicon and Solar Cell Technologies

Their extensive publication record includes papers in frequently targeted venues such as the IEEE Journal of Photovoltaics, IEEE Transactions on Electron Devices, the IEEE Photovoltaics Specialists Conference (PVSC), Energies, and Thin Solid Films.

Recent notable papers by Rockett include:

  • Air Stable, High-Efficiency, Pt-Based Halide Perovskite Solar Cells with Long Carrier Lifetimes, 2020, physica status solidi (RRL) - Rapid Research Letters
  • Improving Photostability of Cesium-Doped Formamidinium Lead Triiodide Perovskite, 2021, ACS Energy Letters
  • Degradation Mechanism Due to Water Ingress Effect on the Top Contact of Cu(In,Ga)Se2 Solar Cells, 2020, Energies
  • Large-Area (Ag,Cu)(In,Ga)Se2 Thin-Film Solar Cells with Increased Bandgap and Reduced Voltage Losses Realized with Bulk Defect Reduction and Front-Grading of the Absorber Bandgap, 2022, Solar RRL
  • Assessment of Cu(In, Ga)Se2 Solar Cells Degradation due to Water Ingress Effect on The CdS Buffer Layer, 2021, Journal of Energy and Power Technology

Their frequent collaborators include Sylvain Marsillac, Deewakar Poudel, R Todi, Benjamin Belfore, and Arokia Nathan, with multiple joint publications reflecting ongoing research partnerships.

Best Publications

  • Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy

    G. Martin;A. Botchkarev;Angus Rockett;H. Morkoç

  • Ultrathin silicon solar microcells for semitransparent, mechanically flexible and microconcentrator module designs

    Jongseung Yoon;Alfred J. Baca;Sang Il Park;Paulius Elvikis

  • CuInSe2 for photovoltaic applications

    Angus Rockett;R. W. Birkmire

  • Photovoltaic manufacturing: Present status, future prospects, and research needs

    Colin A. Wolden;Juanita Kurtin;Jason B. Baxter;Ingrid Repins

  • A new simulation software of solar cells—wxAMPS

    Yiming Liu;Yiming Liu;Yun Sun;Angus Rockett

  • Valence-band discontinuity between GaN and AlN measured by x-ray photoemission spectroscopy

    G. Martin;S. Strite;A. Botchkarev;A. Agarwal

  • The materials science of semiconductors

    Angus Rockett

  • Effect of Ga content on defect states in CuIn 1¿x Ga x Se 2 photovoltaic devices

    J. T. Heath;J. D. Cohen;W. N. Shafarman;D. X. Liao

  • Growth and properties of single crystal TiN films deposited by reactive magnetron sputtering

    B. O. Johansson;J.‐E. Sundgren;J. E. Greene;A. Rockett

  • GaN grown on hydrogen plasma cleaned 6H‐SiC substrates

    M. E. Lin;S. Strite;A. Agarwal;A. Salvador

  • Thermal desorption of ultraviolet–ozone oxidized Ge(001) for substrate cleaning

    X. J. Zhang;G. Xue;A. Agarwal;R. Tsu

  • Cu depletion at the CuInSe2 surface

    Dongxiang Liao;Angus Rockett

  • Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells

    Olle Lundberg;Jun Lu;Angus Rockett;Marika Edoff

  • Arrays of ultrathin silicon solar microcells

    John A. Rogers;Angus A. Rockett;Ralph Nuzzo;Jongseung Yoon

  • Effect of ball-milling duration and dehydrogenation on the morphology, microstructure and catalyst dispersion in Ni-catalyzed MgH 2 hydrogen storage materials

    Stephen D. House;John J. Vajo;Chai Ren;Angus A. Rockett

  • Electronic effects of sodium in epitaxial CuIn1−xGaxSe2

    David J. Schroeder;Angus A. Rockett

  • Structural, optical, and electrical properties of epitaxial chalcopyrite CuIn3Se5 films

    H. Z. Xiao;L. Chung Yang;Angus Rockett

  • X-ray photoelectron spectroscopy and theory of the valence band and semicore Ga 3d states in GaN.

    W.R.L. Lambrecht;B. Segall;S. Strite;G. Martin

  • The effect of Na in polycrystalline and epitaxial single-crystal CuIn1−xGaxSe2

    A. Rockett

  • Structure and chemistry of CuInSe2 for solar cell technology: current understanding and recommendations

    Angus Rockett;F. Abou-Elfotouh;D. Albin;M. Bode

Frequent Co-Authors

Joseph E Greene
Joseph E Greene University of Illinois at Urbana-Champaign
Robert W. Collins
Robert W. Collins University of Toledo
Hadis Morkoç
Hadis Morkoç Virginia Commonwealth University
Scott A. Barnett
Scott A. Barnett Northwestern University
Ian M. Robertson
Ian M. Robertson University of Wisconsin–Madison
Ivan Petrov
Ivan Petrov University of Illinois at Urbana-Champaign
Christopher J. Kiely
Christopher J. Kiely Lehigh University
Joseph W. Lyding
Joseph W. Lyding University of Illinois at Urbana-Champaign
Anant K. Agarwal
Anant K. Agarwal The Ohio State University
Ralph G. Nuzzo
Ralph G. Nuzzo University of Illinois at Urbana-Champaign

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