Joseph E Greene

Joseph E Greene publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Joseph E Greene sits on this spectrum.

Joseph E Greene D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Joseph E Greene sits on this spectrum.

Research.com Recognitions

• 2013 - Fellow of the Materials Research Society
• 2003 - Member of the National Academy of Engineering For pioneering studies in the synthesis and characterization of epitaxial and highly ordered polycrystalline materials.
• 1999 - David Turnbull Lectureship, Materials Research Society "For contributions to the use of non-thermal methods in the growth of thin films and the engineering of their phase, composition, and microstructure; and for excellence in teaching and writing."
• 1998 - Fellow of American Physical Society (APS) Citation For original contributions to the experimental development, modeling, and understanding of Si, Ge, and Si1xGex atomiclayer epitaxy and gassource molecularbeam epitaxy
• 1956 - Fellow of the American Association for the Advancement of Science (AAAS)

Overview

Best Publications

• Microstructural evolution during film growth

  I. Petrov;P.B. Barna;Lars Hultman;J.E. Greene

  2176
  Citations

• Growth of single-crystal TiN/VN strained-layer superlattices with extremely high mechanical hardness

  U. Helmersson;S. Todorova;S. A. Barnett;J.‐E. Sundgren

  981
  Citations

• Oxidation of metastable single‐phase polycrystalline Ti0.5Al0.5N films: Kinetics and mechanisms

  D. McIntyre;J. E. Greene;G. Håkansson;J.‐E. Sundgren

  682
  Citations

• Heteroepitaxial wurtzite and zinc‐blende structure GaN grown by reactive‐ion molecular‐beam epitaxy: Growth kinetics, microstructure, and properties

  R. C. Powell;N.‐E. Lee;Y.‐W. Kim;J. E. Greene

  603
  Citations

• Size-dependent melting point depression of nanostructures: Nanocalorimetric measurements

  M. Zhang;M. Yu. Efremov;F. Schiettekatte;E. A. Olson

  586
  Citations

• Development of preferred orientation in polycrystalline TiN layers grown by ultrahigh vacuum reactive magnetron sputtering

  J. E. Greene;J.‐E. Sundgren;L. Hultman;I. Petrov

  452
  Citations

• Pathways of atomistic processes on TiN(001) and (111) surfaces during film growth: An ab initio study

  D. Gall;S. Kodambaka;M. A. Wall;I. Petrov

  400
  Citations

• Microstructure modification of TiN by ion bombardment during reactive sputter deposition

  I. Petrov;L. Hultman;U. Helmersson;J.-E. Sundgren

  380
  Citations

• Microstructure and physical properties of polycrystalline metastable Ti0.5Al0.5N alloys grown by d.c. magnetron sputter deposition

  G. Håkansson;J.-E. Sundgren;D. McIntyre;J.E. Greene

  334
  Citations

• Review Article: Tracing the recorded history of thin-film sputter deposition: From the 1800s to 2017

  Joseph E Greene

  328
  Citations

• Growth of poly- and single-crystal ScN on MgO(001): Role of low-energy N2+ irradiation in determining texture, microstructure evolution, and mechanical properties

  D. Gall;I. Petrov;N. Hellgren;L. Hultman

  319
  Citations

• Nanoindentation studies of single‐crystal (001)‐, (011)‐, and (111)‐oriented TiN layers on MgO

  H. Ljungcrantz;M. Odén;L. Hultman;J. E. Greene

  296
  Citations

• Polycrystalline TiN films deposited by reactive bias magnetron sputtering: Effects of ion bombardment on resputtering rates, film composition, and microstructure

  I. Petrov;L. Hultman;J.‐E. Sundgren;J. E. Greene

  294
  Citations

• High‐flux low‐energy (≂20 eV) N+2 ion irradiation during TiN deposition by reactive magnetron sputtering: Effects on microstructure and preferred orientation

  L. Hultman;J.‐E. Sundgren;J. E. Greene;D. B. Bergstrom

  293
  Citations

• Temperature-dependent optical band gap of the metastable zinc-blende structure beta -GaN.

  G. Ramírez-Flores;H. Navarro-Contreras;A. Lastras-Martínez;R. C. Powell

  289
  Citations

• Crystal growth and microstructure of polycrystalline Ti1−xAlxN alloy films deposited by ultra-high-vacuum dual-target magnetron sputtering

  U. Wahlström;L. Hultman;J.-E. Sundgren;F. Adibi

  288
  Citations

• Average energy deposited per atom : a universal parameter for describing ion-assisted film growth ?

  I. Petrov;F. Adibi;J. E. Greene;L. Hultman

  277
  Citations

• Self-organized nanocolumnar structure in superhard TiB2 thin films

  P. H. Mayrhofer;C. Mitterer;J. G. Wen;J. E. Greene

  275
  Citations

• Synthesis of metastable epitaxial zinc‐blende‐structure AlN by solid‐state reaction

  I. Petrov;E. Mojab;R. C. Powell;J. E. Greene

  270
  Citations

• Use of an externally applied axial magnetic field to control ion/neutral flux ratios incident at the substrate during magnetron sputter deposition

  I. Petrov;F. Adibi;J. E. Greene;W. D. Sproul

  259
  Citations

• Growth and properties of single crystal TiN films deposited by reactive magnetron sputtering

  B. O. Johansson;J.‐E. Sundgren;J. E. Greene;A. Rockett

  258
  Citations