World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
63
Citations
12815
World Ranking
6257
National Ranking
1594

John Kouvetakis publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where John Kouvetakis sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 358 publications — 71st percentile

71% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

John Kouvetakis D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where John Kouvetakis sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 63 D-Index — 53rd percentile

53% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

John Kouvetakis is affiliated with Arizona State University in the United States. Their research spans multiple areas within engineering and physics, focusing primarily on electrical and electronic engineering as well as atomic and molecular physics and optics.

Their scholarly output includes a range of work related to semiconductor materials and devices, photonic and optical devices, and thin-film transistor technologies. The main topics of Kouvetakis's work cover:

  • Photonic and Optical Devices
  • Thin-Film Transistor Technologies
  • Semiconductor materials and interfaces
  • Semiconductor materials and devices
  • Semiconductor Quantum Structures and Devices
  • Advanced Photonic Communication Systems
  • Nanowire Synthesis and Applications

John Kouvetakis has published extensively in notable scientific venues, with frequent publications appearing in:

  • Journal of Applied Physics
  • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • arXiv (Cornell University)
  • ACS Applied Materials & Interfaces
  • ACS Applied Electronic Materials

Some of Kouvetakis's recent research papers include:

  • "Extended Compositional Range for the Synthesis of SWIR and LWIR Ge1-ySny Alloys and Device Structures via CVD of SnH4 and Ge3H8" (2021), published in ACS Applied Electronic Materials
  • "Consistent optical and electrical determination of carrier concentrations for the accurate modeling of the transport properties of n-type Ge" (2023), published in Materials Science in Semiconductor Processing
  • "Gas source molecular epitaxy of Ge1−ySny materials and devices using high order Ge4H10 and Ge5H12 hydrides" (2021), published in Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • "A practical theoretical model for Ge-like epitaxial diodes: I. The I-V characteristics" (2024), published in Journal of Applied Physics
  • "Synthesis of short-wave infrared Ge1−ySny semiconductors directly on Si(100) via ultralow temperature molecular routes for monolithic integration applications" (2022), published in Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Kouvetakis frequently collaborates with other researchers. Their common coauthors include:

  • J. Menéndez
  • Matthew A. Mircovich
  • Dhruve A. Ringwala
  • Manuel A. Roldán
  • Chi Xu

Their research outputs contribute to the fields of engineering and physics and specifically address topics within advanced photonic communication systems and nanowire synthesis. This multidisciplinary approach underlines a focus on the development of semiconductor quantum structures and devices with applications in photonics and electronics.

Best Publications

  • Single-mode solid-state single photon source based on isolated quantum dots in pillar microcavities

    E. Moreau;I. Robert;J. M. Gérard;I. Abram

  • Boron-carbon-nitrogen materials of graphite-like structure

    R.B. Kaner;J. Kouvetakis;C.E. Warble;M.L. Sattler

  • Ge–Sn semiconductors for band-gap and lattice engineering

    M. Bauer;M. Bauer;J. Taraci;J. Taraci;J. Tolle;J. Tolle;Andrew Chizmeshya

  • TIN-BASED GROUP IV SEMICONDUCTORS: New Platforms for Opto- and Microelectronics on Silicon

    John Kouvetakis;Jose Menendez;Andrew Chizmeshya

  • Optical critical points of thin-film Ge 1-y Sn y alloys: A comparative Ge 1-y Sn y /Ge 1-x Si x study

    Vijay R. D'Costa;Candi S. Cook;Anthony Birdwell;Chris L. Littler

  • Novel aspects of graphite intercalation by fluorine and fluorides and new B/C, C/N and B/C/N materials based on the graphite network

    J. Kouvetakis;T. Sasaki;C. Shen;R. Hagiwara

  • Novel synthetic routes to carbon-nitrogen thin films

    John Kouvetakis;Anil Bandari;Michael Todd;Barry Wilkens

  • Sixsnyge1-x-y and related alloy heterostructures based on si, ge and sn

    John Kouvetakis;Matthew Bauer;John Tolle

  • A novel graphite-like material of composition BC3, and nitrogen–carbon graphites

    John Kouvetakis;Richard B. Kaner;Margaret L. Sattler;Neil Bartlett

  • Gesn alloys and ordered phases with direct tunable bandgaps grown directly on silicon

    John Kouvetakis;Matthew Bauer;Jose Menendez;Chang Wu Hu

  • Hybrid Group IV/III-V Semiconductor Structures

    John Kouvetakis;Jose Menendez

  • Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon

    J. Mathews;R. T. Beeler;J. Tolle;C. Xu

  • Method for preparing Ge1-x-ySnxEy (E=P, As, Sb) semiconductors and related Si-Ge-Sn-E and Si-Ge-E analogs

    John Kouvetakis;Matthew Bauer;John Tolle;Candi Cook

  • Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications

    Jay Mathews;Radek Roucka;Junqi Xie;Shui Qing Yu

  • Type-I Ge∕Ge1−x−ySixSny strained-layer heterostructures with a direct Ge bandgap

    Jose Menendez;John Kouvetakis

  • Raman scattering in Ge1−ySny alloys

    V. R. D'Costa;J. Tolle;R. Roucka;C. D. Poweleit

  • Tunable optical gap at a fixed lattice constant in group-IV semiconductor alloys.

    V. R. D'Costa;Y. Y. Fang;J. Tolle;John Kouvetakis

  • Advances in SiGeSn technology

    Richard A. Soref;John Kouvetakis;John Tolle;Jose Menendez

  • Compositional dependence of the direct and indirect band gaps in Ge1−ySny alloys from room temperature photoluminescence: implications for the indirect to direct gap crossover in intrinsic and n-type materials

    L. Jiang;J. D. Gallagher;Charutha Lasitha Senaratne;Toshihiro Aoki

  • Next generation of Ge1−ySny (y = 0.01-0.09) alloys grown on Si(100) via Ge3H8 and SnD4: Reaction kinetics and tunable emission

    G. Grzybowski;R. T. Beeler;L. Jiang;David Smith

  • Synthesis of LiBC4N4, BC3N3, and Related C−N Compounds of Boron: New Precursors to Light Element Ceramics

    Darrick Williams;Brett Pleune;John Kouvetakis;M. D. Williams

Frequent Co-Authors

Jose Menendez
Jose Menendez Arizona State University
John Tolle
John Tolle Arizona State University
Peter A. Crozier
Peter A. Crozier Arizona State University
Michael O'Keeffe
Michael O'Keeffe Arizona State University
Michael J. Todd
Michael J. Todd Cornell University
Shui-Qing Yu
Shui-Qing Yu University of Arkansas at Fayetteville
Arne Haaland
Arne Haaland University of Oslo
Martha R. McCartney
Martha R. McCartney Arizona State University
Richard B. Kaner
Richard B. Kaner University of California, Los Angeles
Toshio Sakurai
Toshio Sakurai Tohoku University

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