John Kouvetakis

Overview

Best Publications

• Single-mode solid-state single photon source based on isolated quantum dots in pillar microcavities

  E. Moreau;I. Robert;J. M. Gérard;I. Abram

  714
  Citations

• Boron-carbon-nitrogen materials of graphite-like structure

  R.B. Kaner;J. Kouvetakis;C.E. Warble;M.L. Sattler

  374
  Citations

• Ge–Sn semiconductors for band-gap and lattice engineering

  M. Bauer;M. Bauer;J. Taraci;J. Taraci;J. Tolle;J. Tolle;Andrew Chizmeshya

  350
  Citations

• TIN-BASED GROUP IV SEMICONDUCTORS: New Platforms for Opto- and Microelectronics on Silicon

  John Kouvetakis;Jose Menendez;Andrew Chizmeshya

  331
  Citations

• Optical critical points of thin-film Ge 1-y Sn y alloys: A comparative Ge 1-y Sn y /Ge 1-x Si x study

  Vijay R. D'Costa;Candi S. Cook;Anthony Birdwell;Chris L. Littler

  324
  Citations

• Novel aspects of graphite intercalation by fluorine and fluorides and new B/C, C/N and B/C/N materials based on the graphite network

  J. Kouvetakis;T. Sasaki;C. Shen;R. Hagiwara

  305
  Citations

• Novel synthetic routes to carbon-nitrogen thin films

  John Kouvetakis;Anil Bandari;Michael Todd;Barry Wilkens

  295
  Citations

• Sixsnyge1-x-y and related alloy heterostructures based on si, ge and sn

  John Kouvetakis;Matthew Bauer;John Tolle

  287
  Citations

• A novel graphite-like material of composition BC3, and nitrogen–carbon graphites

  John Kouvetakis;Richard B. Kaner;Margaret L. Sattler;Neil Bartlett

  277
  Citations

• Gesn alloys and ordered phases with direct tunable bandgaps grown directly on silicon

  John Kouvetakis;Matthew Bauer;Jose Menendez;Chang Wu Hu

  249
  Citations

• Hybrid Group IV/III-V Semiconductor Structures

  John Kouvetakis;Jose Menendez

  244
  Citations

• Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon

  J. Mathews;R. T. Beeler;J. Tolle;C. Xu

  232
  Citations

• Method for preparing Ge1-x-ySnxEy (E=P, As, Sb) semiconductors and related Si-Ge-Sn-E and Si-Ge-E analogs

  John Kouvetakis;Matthew Bauer;John Tolle;Candi Cook

  232
  Citations

• Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications

  Jay Mathews;Radek Roucka;Junqi Xie;Shui Qing Yu

  174
  Citations

• Type-I Ge∕Ge1−x−ySixSny strained-layer heterostructures with a direct Ge bandgap

  Jose Menendez;John Kouvetakis

  171
  Citations

• Raman scattering in Ge1−ySny alloys

  V. R. D'Costa;J. Tolle;R. Roucka;C. D. Poweleit

  148
  Citations

• Tunable optical gap at a fixed lattice constant in group-IV semiconductor alloys.

  V. R. D'Costa;Y. Y. Fang;J. Tolle;John Kouvetakis

  146
  Citations

• Advances in SiGeSn technology

  Richard A. Soref;John Kouvetakis;John Tolle;Jose Menendez

  139
  Citations

• Compositional dependence of the direct and indirect band gaps in Ge1−ySny alloys from room temperature photoluminescence: implications for the indirect to direct gap crossover in intrinsic and n-type materials

  L. Jiang;J. D. Gallagher;Charutha Lasitha Senaratne;Toshihiro Aoki

  138
  Citations

• Next generation of Ge1−ySny (y = 0.01-0.09) alloys grown on Si(100) via Ge3H8 and SnD4: Reaction kinetics and tunable emission

  G. Grzybowski;R. T. Beeler;L. Jiang;David Smith

  136
  Citations

• Synthesis of LiBC4N4, BC3N3, and Related C−N Compounds of Boron: New Precursors to Light Element Ceramics

  Darrick Williams;Brett Pleune;John Kouvetakis;M. D. Williams

  133
  Citations