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Giovanni Capellini

Giovanni Capellini

D-Index & Metrics

Materials Science

D-Index
40
Citations
6095
World Ranking
12826
National Ranking
299

Overview

Giovanni Capellini is affiliated with Roma Tre University in Italy, where their research spans multiple fields and topics related to engineering and physics. Their primary fields of study include Engineering and Physics and Astronomy, with particular emphasis on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics.

Their research substantially covers a wide range of subfields such as Biomedical Engineering, Materials Chemistry, and Artificial Intelligence. This multidisciplinary approach is reflected in the main topics of Capellini's work which include Photonic and Optical Devices, Semiconductor Quantum Structures and Devices, Nanowire Synthesis and Applications, Silicon Nanostructures and Photoluminescence, Semiconductor Materials and Devices, Advancements in Semiconductor Devices and Circuit Design, and Thin-Film Transistor Technologies.

Notable recent papers authored or co-authored by Capellini include:

  • CMOS-Compatible Bias-Tunable Dual-Band Detector Based on GeSn/Ge/Si Coupled Photodiodes, 2021, ACS Photonics
  • Room Temperature Lasing in GeSn Microdisks Enabled by Strain Engineering, 2022, Advanced Optical Materials
  • Strain Engineered Electrically Pumped SiGeSn Microring Lasers on Si, 2022, ACS Photonics
  • Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering, 2020, Physical Review Applied
  • Nanoscale Mapping of the 3D Strain Tensor in a Germanium Quantum Well Hosting a Functional Spin Qubit Device, 2023, ACS Applied Materials & Interfaces

Frequent collaborators in their research include Michele Virgilio, M. De Seta, Luca Persichetti, Davide Spirito, and L. Di Gaspare. This network of co-authors indicates active engagement within a scholarly community focused on similar scientific challenges.

Capellini's work is published in a variety of venues that reflect their interdisciplinary focus. These include Zenodo (CERN European Organization for Nuclear Research), ECS Meeting Abstracts, arXiv (Cornell University), Applied Physics Letters, and Physical Review Materials. The diversity of these venues highlights contributions across experimental, applied, and theoretical aspects of their research fields.

Capellini's research scope covers developments in nano-scale photonic and electronic devices, quantum structures, and semiconductor materials, often leveraging strain engineering techniques and novel material combinations to advance device performance. Their publications reflect an intersection of advanced physics concepts and practical engineering applications, supporting ongoing progress in semiconductor technology and photonics.

Best Publications

  • Metal–semiconductor–metal near-infrared light detector based on epitaxial Ge/Si

    L. Colace;G. Masini;F. Galluzzi;G. Assanto

  • SiGe intermixing in Ge/Si(100) islands

    Giovanni Capellini;M De Seta;F. Evangelisti

  • Germanium photodetector with 60 GHz bandwidth using inductive gain peaking

    Ari Novack;Mike Gould;Yisu Yang;Zhe Xuan

  • Methods of incorporating germanium within cmos process

    Lawrence C. Gunn;Giovanni Capellini;Maxime Jean Rattier;Thierry J. Pinguet

  • Atomic force microscopy lithography as a nanodevice development technique

    A Notargiacomo;V Foglietti;E Cianci;G Capellini

  • Ge-Si intermixing in Ge quantum dots on Si(001) and Si(111)

    F Boscherini;Giovanni Capellini;L Di Gaspare;F Rosei

  • Spectroscopic Signatures of AA’ and AB Stacking of Chemical Vapor Deposited Bilayer MoS2

    Ming Xia;Bo Li;Kuibo Yin;Kuibo Yin;Giovanni Capellini

  • Gate-controlled quantum dots and superconductivity in planar germanium

    N. W. Hendrickx;D. P. Franke;A. Sammak;M. Kouwenhoven

  • Shallow and Undoped Germanium Quantum Wells: A Playground for Spin and Hybrid Quantum Technology

    Amir Sammak;Diego Sabbagh;Nico W. Hendrickx;Mario Lodari

  • Low-energy yield spectroscopy as a novel technique for determining band offsets: Application to the c-Si(100)/a-Si:H-heterostructure.

    M Sebastiani;L Di Gaspare;Giovanni Capellini;C Bittencourt

  • Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process

    Giovanni Capellini;C Reich;S Guha;Y Yamamoto

  • Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach

    Giovanni Capellini;G Kozlowski;Y Yamamoto;M Lisker

  • GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers

    Daniela Stange;Nils von den Driesch;Nils von den Driesch;Thomas Zabel;Francesco Armand-Pilon

  • Atomic force microscopy study of self-organized Ge islands grown on Si(100) by low pressure chemical vapor deposition

    Giovanni Capellini;L Di Gaspare;F Evangelisti;E. Palange

  • Radiative recombination and optical gain spectra in biaxially strained n-type germanium

    M Virgilio;M Virgilio;Cl Manganelli;Cl Manganelli;G Grosso;G Grosso;G Pizzi

  • Germanium integrated CMOS wafer and method for manufacturing the same

    Lawrence C. Gunn;Giovanni Capellini;Gianlorenzo Masini

  • Monolithically integrated high-speed CMOS photonic transceivers

    T. Pinguet;B. Analui;E. Balmater;D. Guckenberger

  • A Four-Channel, 10 Gbps Monolithic Optical Receiver In 130nm CMOS With Integrated Ge Waveguide Photodetectors

    Gianlorenzo Masini;Giovanni Capellini;Jeremy Witzens;Cary Gunn

  • High-Speed Near Infrared Optical Receivers Based on Ge Waveguide Photodetectors Integrated in a CMOS Process

    Gianlorenzo Masini;Subal Sahni;Giovanni Capellini;Jeremy Witzens

  • Strain relaxation in high Ge content SiGe layers deposited on Si

    G. Capellini;M. De Seta;Y. Busby;M. Pea

  • High temperature x ray diffraction measurements on Ge/Si(001) heterostructures: A study on the residual tensile strain

    G. Capellini;M. De Seta;P. Zaumseil;G. Kozlowski

  • Advanced GeSn/SiGeSn Group IV Heterostructure Lasers.

    Nils von den Driesch;Daniela Stange;Denis Rainko;Ivan Povstugar

  • A 1550nm, 10Gbps monolithic optical receiver in 130nm CMOS with integrated Ge waveguide photodetector

    G. Masini;G. Capellini;J. Witzens;C. Gunn

  • Metal-Semiconductor-Metal Near Infrared Light Detector Based on Epitaxial Ge on Si

    L. Colace;G. Masini;F. Galluzzi;G. Assanto

Frequent Co-Authors

Douglas J. Paul
Douglas J. Paul University of Glasgow
Jérôme Faist
Jérôme Faist ETH Zurich
Jeremy Witzens
Jeremy Witzens RWTH Aachen University
Manfred Helm
Manfred Helm Helmholtz-Zentrum Dresden-Rossendorf
Detlev Grützmacher
Detlev Grützmacher Forschungszentrum Jülich
Nunzio Motta
Nunzio Motta Queensland University of Technology
Bernd Tillack
Bernd Tillack Innovations for High Performance Microelectronics
Jacob Piehler
Jacob Piehler Osnabrück University
Gaetano Assanto
Gaetano Assanto Roma Tre University
Federico Rosei
Federico Rosei Institut National de la Recherche Scientifique

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