World's Best Scientists 2026 revealed!
Giovanni Capellini

Giovanni Capellini

D-Index & Metrics

Materials Science

D-Index
40
Citations
6095
World Ranking
12822
National Ranking
299

Giovanni Capellini publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Giovanni Capellini sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 303 publications — 61st percentile

61% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Giovanni Capellini D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Giovanni Capellini sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 40 D-Index — 1st percentile

1% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Giovanni Capellini is affiliated with Roma Tre University in Italy, where their research spans multiple fields and topics related to engineering and physics. Their primary fields of study include Engineering and Physics and Astronomy, with particular emphasis on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics.

Their research substantially covers a wide range of subfields such as Biomedical Engineering, Materials Chemistry, and Artificial Intelligence. This multidisciplinary approach is reflected in the main topics of Capellini's work which include Photonic and Optical Devices, Semiconductor Quantum Structures and Devices, Nanowire Synthesis and Applications, Silicon Nanostructures and Photoluminescence, Semiconductor Materials and Devices, Advancements in Semiconductor Devices and Circuit Design, and Thin-Film Transistor Technologies.

Notable recent papers authored or co-authored by Capellini include:

  • CMOS-Compatible Bias-Tunable Dual-Band Detector Based on GeSn/Ge/Si Coupled Photodiodes, 2021, ACS Photonics
  • Room Temperature Lasing in GeSn Microdisks Enabled by Strain Engineering, 2022, Advanced Optical Materials
  • Strain Engineered Electrically Pumped SiGeSn Microring Lasers on Si, 2022, ACS Photonics
  • Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering, 2020, Physical Review Applied
  • Nanoscale Mapping of the 3D Strain Tensor in a Germanium Quantum Well Hosting a Functional Spin Qubit Device, 2023, ACS Applied Materials & Interfaces

Frequent collaborators in their research include Michele Virgilio, M. De Seta, Luca Persichetti, Davide Spirito, and L. Di Gaspare. This network of co-authors indicates active engagement within a scholarly community focused on similar scientific challenges.

Capellini's work is published in a variety of venues that reflect their interdisciplinary focus. These include Zenodo (CERN European Organization for Nuclear Research), ECS Meeting Abstracts, arXiv (Cornell University), Applied Physics Letters, and Physical Review Materials. The diversity of these venues highlights contributions across experimental, applied, and theoretical aspects of their research fields.

Capellini's research scope covers developments in nano-scale photonic and electronic devices, quantum structures, and semiconductor materials, often leveraging strain engineering techniques and novel material combinations to advance device performance. Their publications reflect an intersection of advanced physics concepts and practical engineering applications, supporting ongoing progress in semiconductor technology and photonics.

Best Publications

  • Metal–semiconductor–metal near-infrared light detector based on epitaxial Ge/Si

    L. Colace;G. Masini;F. Galluzzi;G. Assanto

  • SiGe intermixing in Ge/Si(100) islands

    Giovanni Capellini;M De Seta;F. Evangelisti

  • Germanium photodetector with 60 GHz bandwidth using inductive gain peaking

    Ari Novack;Mike Gould;Yisu Yang;Zhe Xuan

  • Methods of incorporating germanium within cmos process

    Lawrence C. Gunn;Giovanni Capellini;Maxime Jean Rattier;Thierry J. Pinguet

  • Atomic force microscopy lithography as a nanodevice development technique

    A Notargiacomo;V Foglietti;E Cianci;G Capellini

  • Ge-Si intermixing in Ge quantum dots on Si(001) and Si(111)

    F Boscherini;Giovanni Capellini;L Di Gaspare;F Rosei

  • Spectroscopic Signatures of AA’ and AB Stacking of Chemical Vapor Deposited Bilayer MoS2

    Ming Xia;Bo Li;Kuibo Yin;Kuibo Yin;Giovanni Capellini

  • Gate-controlled quantum dots and superconductivity in planar germanium

    N. W. Hendrickx;D. P. Franke;A. Sammak;M. Kouwenhoven

  • Shallow and Undoped Germanium Quantum Wells: A Playground for Spin and Hybrid Quantum Technology

    Amir Sammak;Diego Sabbagh;Nico W. Hendrickx;Mario Lodari

  • Low-energy yield spectroscopy as a novel technique for determining band offsets: Application to the c-Si(100)/a-Si:H-heterostructure.

    M Sebastiani;L Di Gaspare;Giovanni Capellini;C Bittencourt

  • Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process

    Giovanni Capellini;C Reich;S Guha;Y Yamamoto

  • Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach

    Giovanni Capellini;G Kozlowski;Y Yamamoto;M Lisker

  • GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers

    Daniela Stange;Nils von den Driesch;Nils von den Driesch;Thomas Zabel;Francesco Armand-Pilon

  • Atomic force microscopy study of self-organized Ge islands grown on Si(100) by low pressure chemical vapor deposition

    Giovanni Capellini;L Di Gaspare;F Evangelisti;E. Palange

  • Radiative recombination and optical gain spectra in biaxially strained n-type germanium

    M Virgilio;M Virgilio;Cl Manganelli;Cl Manganelli;G Grosso;G Grosso;G Pizzi

  • Germanium integrated CMOS wafer and method for manufacturing the same

    Lawrence C. Gunn;Giovanni Capellini;Gianlorenzo Masini

  • Monolithically integrated high-speed CMOS photonic transceivers

    T. Pinguet;B. Analui;E. Balmater;D. Guckenberger

  • A Four-Channel, 10 Gbps Monolithic Optical Receiver In 130nm CMOS With Integrated Ge Waveguide Photodetectors

    Gianlorenzo Masini;Giovanni Capellini;Jeremy Witzens;Cary Gunn

  • High-Speed Near Infrared Optical Receivers Based on Ge Waveguide Photodetectors Integrated in a CMOS Process

    Gianlorenzo Masini;Subal Sahni;Giovanni Capellini;Jeremy Witzens

  • Strain relaxation in high Ge content SiGe layers deposited on Si

    G. Capellini;M. De Seta;Y. Busby;M. Pea

  • High temperature x ray diffraction measurements on Ge/Si(001) heterostructures: A study on the residual tensile strain

    G. Capellini;M. De Seta;P. Zaumseil;G. Kozlowski

  • Advanced GeSn/SiGeSn Group IV Heterostructure Lasers.

    Nils von den Driesch;Daniela Stange;Denis Rainko;Ivan Povstugar

  • A 1550nm, 10Gbps monolithic optical receiver in 130nm CMOS with integrated Ge waveguide photodetector

    G. Masini;G. Capellini;J. Witzens;C. Gunn

  • Metal-Semiconductor-Metal Near Infrared Light Detector Based on Epitaxial Ge on Si

    L. Colace;G. Masini;F. Galluzzi;G. Assanto

Frequent Co-Authors

Douglas J. Paul
Douglas J. Paul University of Glasgow
Jérôme Faist
Jérôme Faist ETH Zurich
Jeremy Witzens
Jeremy Witzens RWTH Aachen University
Manfred Helm
Manfred Helm Helmholtz-Zentrum Dresden-Rossendorf
Detlev Grützmacher
Detlev Grützmacher Forschungszentrum Jülich
Nunzio Motta
Nunzio Motta Queensland University of Technology
Bernd Tillack
Bernd Tillack Innovations for High Performance Microelectronics
Jacob Piehler
Jacob Piehler Osnabrück University
Gaetano Assanto
Gaetano Assanto Roma Tre University
Federico Rosei
Federico Rosei Institut National de la Recherche Scientifique

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