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Jurgen Michel

Jurgen Michel

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
67
Citations
22877
World Ranking
1053
National Ranking
445

Materials Science

D-Index
69
Citations
23731
World Ranking
4545
National Ranking
1205

Overview

Jurgen Michel is a researcher affiliated with MIT in the United States, specializing in engineering and physics domains. Their work predominantly spans electrical and electronic engineering as well as atomic and molecular physics, and optics. The scientific contributions cover a variety of topics within photonic and optical devices, semiconductor materials and devices, and semiconductor quantum structures and devices, alongside thin-film transistor technologies and nanowire synthesis and applications.

Their recent publications reflect this diverse scope in semiconductor and photonics research. Selected papers include:

  • A review of silicon-based wafer bonding processes, an approach to realize the monolithic integration of Si-CMOS and III-V-on-Si wafers, 2021, Journal of Semiconductors
  • Sub-mA/cm2 Dark Current Density, Buffer-Less Germanium (Ge) Photodiodes on a 200-mm Ge-on-Insulator Substrate, 2021, IEEE Transactions on Electron Devices
  • PIC-integrable, uniformly tensile-strained Ge-on-insulator photodiodes enabled by recessed SiNx stressor, 2021, Photonics Research
  • Effectiveness of InGaAs/GaAs superlattice dislocation filter layers epitaxially grown on 200 mm Si wafers with and without Ge buffers, 2020, Semiconductor Science and Technology
  • Trapping threading dislocations in germanium trenches on silicon wafer, 2020, Journal of Crystal Growth

Their frequent coauthors include Lionel C. Kimerling, Rui-Tao Wen, Kwang Hong Lee, Danhao Ma, and Chuan Seng Tan. These collaborations appear regularly in their work, with several joint publications primarily related to materials and device engineering.

Publication venues where Jurgen Michel often contributes include Applied Physics Letters, Journal of Lightwave Technology, Journal of Semiconductors, IEEE Transactions on Electron Devices, and Photonics Research. These publications serve as platforms for dissemination in the fields of photonics and semiconductor technology.

Their research spans several main fields of study:

  • Engineering
  • Physics and Astronomy

More detailed subfields of study cover:

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Biomedical Engineering
  • Artificial Intelligence
  • Materials Chemistry

Core topics consistently addressed in their research are:

  • Photonic and Optical Devices
  • Semiconductor materials and devices
  • Semiconductor Quantum Structures and Devices
  • Thin-Film Transistor Technologies
  • Nanowire Synthesis and Applications
  • Neural Networks and Reservoir Computing
  • Advanced Photonic Communication Systems

Best Publications

  • A Dielectric Omnidirectional Reflector

    Yoel Fink;Joshua N. Winn;Shanhui Fan;Chiping Chen

  • High-performance Ge-on-Si photodetectors

    Jurgen Michel;Jifeng Liu;Lionel C. Kimerling

  • Ge-on-Si laser operating at room temperature.

    Jifeng Liu;Xiaochen Sun;Rodolfo Camacho-Aguilera;Lionel C. Kimerling

  • An electrically pumped germanium laser

    Rodolfo E. Camacho-Aguilera;Yan Cai;Neil Patel;Jonathan T. Bessette

  • Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates

    E. A. Fitzgerald;Y.‐H. Xie;M. L. Green;D. Brasen

  • Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si

    Jifeng Liu;Xiaochen Sun;Dong Pan;Xiaoxin Wang

  • Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators

    Jifeng Liu;Mark Beals;Andrew Pomerene;Sarah Bernardis

  • On-chip light sources for silicon photonics

    Zhiping Zhou;Bing Yin;Jurgen Michel

  • Impurity enhancement of the 1.54‐μm Er3+ luminescence in silicon

    J. Michel;J. L. Benton;R. F. Ferrante;D. C. Jacobson

  • High performance, waveguide integrated Ge photodetectors

    Donghwan Ahn;Ching-yin Hong;Jifeng Liu;Wojciech Giziewicz

  • Room‐temperature sharp line electroluminescence at λ=1.54 μm from an erbium‐doped, silicon light‐emitting diode

    B. Zheng;J. Michel;F. Y. G. Ren;L. C. Kimerling

  • Electrical properties of dislocations and point defects in plastically deformed silicon.

    P. Omling;E. R. Weber;L. Montelius;H. Alexander

  • Direct gap photoluminescence of n-type tensile-strained Ge-on-Si

    Xiaochen Sun;Jifeng Liu;Lionel C. Kimerling;Jurgen Michel

  • ELECTROLUMINESCENCE OF ERBIUM-DOPED SILICON

    J. Palm;F. Gan;B. Zheng;J. Michel

  • Nonlinear Group IV photonics based on silicon and germanium: from near-infrared to mid-infrared

    Lin Zhang;Anuradha M. Agarwal;Lionel C. Kimerling;Jurgen Michel

  • High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform

    Jifeng Liu;Jurgen Michel;Wojciech Giziewicz;Dong Pan

  • Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes

    Xiaochen Sun;Jifeng Liu;Lionel C. Kimerling;Jurgen Michel

  • Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications

    Jifeng Liu;Douglas D. Cannon;Kazumi Wada;Yasuhiko Ishikawa

  • ATAC: a 1000-core cache-coherent processor with on-chip optical network

    George Kurian;Jason E. Miller;James Psota;Jonathan Eastep

  • Horizontal single and multiple slot waveguides: optical transmission at λ=1550 nm

    Rong Sun;Po Dong;Ning-ning Feng;Ching-yin Hong

Frequent Co-Authors

Jifeng Liu
Jifeng Liu Dartmouth College
Lin Zhang
Lin Zhang Tianjin University
Guifang Li
Guifang Li University of Central Florida
Chuan Seng Tan
Chuan Seng Tan Nanyang Technological University
Mahmoud Rasras
Mahmoud Rasras New York University Abu Dhabi
Douglas M. Gill
Douglas M. Gill IBM (United States)
Xing Sheng
Xing Sheng Tsinghua University

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