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Eugene A. Fitzgerald

Eugene A. Fitzgerald

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
87
Citations
28374
World Ranking
346
National Ranking
165

Materials Science

D-Index
90
Citations
30646
World Ranking
1683
National Ranking
519

Overview

Eugene A. Fitzgerald is affiliated with MIT in the United States, contributing research primarily in the fields of engineering and physics and astronomy. Their work spans various subfields, including electrical and electronic engineering, atomic and molecular physics, optics, biomedical engineering, materials chemistry, and condensed matter physics.

The scientist's research topics prominently cover semiconductor materials and devices, semiconductor quantum structures and devices, photonic and optical devices, 3D IC and TSV technologies, advancements in semiconductor devices and circuit design, thin-film transistor technologies, and nanowire synthesis and applications.

Frequent publication venues for Eugene A. Fitzgerald include:

  • Journal of Semiconductors
  • ACS Applied Materials & Interfaces
  • Semiconductor Science and Technology
  • IEEE Transactions on Electron Devices
  • Materials Science in Semiconductor Processing

Recent papers authored or coauthored by Eugene A. Fitzgerald are:

  • A review of silicon-based wafer bonding processes, an approach to realize the monolithic integration of Si-CMOS and III-V-on-Si wafers (2021), Journal of Semiconductors
  • Freestanding High-Resolution Quantum Dot Color Converters with Small Pixel Sizes (2022), ACS Applied Materials & Interfaces
  • Effectiveness of InGaAs/GaAs superlattice dislocation filter layers epitaxially grown on 200 mm Si wafers with and without Ge buffers (2020), Semiconductor Science and Technology
  • CMOS-Compatible Ti/TiN/Al Refractory Ohmic Contact for GaAs Heterojunction Bipolar Transistors Grown on Ge/Si Substrate (2021), IEEE Transactions on Electron Devices
  • High-Frequency Characteristics of InGaP/GaAs Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 mm Ge/Si Wafers (2020), IEEE Journal of the Electron Devices Society

Coauthors frequently collaborating with Eugene A. Fitzgerald include:

  • Yue Wang
  • Chuan Seng Tan
  • Kenneth Eng Kian Lee
  • Kwang Hong Lee
  • Wan Khai Loke

The body of work of Eugene A. Fitzgerald reflects a focus on semiconductor research and device engineering, with an emphasis on emerging technologies in wafer bonding, quantum dot color converters, dislocation filter layers, and high-frequency characteristics of heterojunction bipolar transistors. The publications serve interdisciplinary research communities interested in semiconductor materials, microelectronic device fabrication, and photonic applications.

Best Publications

  • Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

    Minjoo L. Lee;Eugene A. Fitzgerald;Mayank T. Bulsara;Matthew T. Currie

  • Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates

    E. A. Fitzgerald;Y.‐H. Xie;M. L. Green;D. Brasen

  • Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing

    M. T. Currie;S. B. Samavedam;T. A. Langdo;C. W. Leitz

  • Dislocations in strained-layer epitaxy : theory, experiment, and applications

    E.A. Fitzgerald

  • Relaxed GexSi1−x structures for III–V integration with Si and high mobility two‐dimensional electron gases in Si

    E. A. Fitzgerald;Y.‐H. Xie;D. Monroe;P. J. Silverman

  • Coherent phonon heat conduction in superlattices.

    Maria N. Luckyanova;Jivtesh Garg;Keivan Esfarjani;Adam Jandl

  • Remote epitaxy through graphene enables two-dimensional material-based layer transfer

    Yunjo Kim;Samuel S. Cruz;Kyusang Lee;Babatunde O. Alawode

  • Impurity enhancement of the 1.54‐μm Er3+ luminescence in silicon

    J. Michel;J. L. Benton;R. F. Ferrante;D. C. Jacobson

  • Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same

    Matthew T. Currie;Anthony J. Lochtefeld;Richard Hammond;Eugene A. Fitzgerald

  • Strained-semiconductor-on-insulator device structures

    Anthony Lochtefeld;Thomas Langdo;Richard Hammond;Matthew Currie

  • Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area

    E. A. Fitzgerald;G. P. Watson;R. E. Proano;D. G. Ast

  • Luminescence and structural study of porous silicon films

    Y. H. Xie;W. L. Wilson;F. M. Ross;J. A. Mucha

  • Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates

    Minjoo L. Lee;C. W. Leitz;Z. Cheng;A. J. Pitera

  • KONTROLLE DER VERSPANNUNGSDICHTE DURCH VERWENDUNG VON GRADIENTENSCHICHTEN UND DURCH PLANARISIERUNG

    Eugene A. Fitzgerald

  • Methods of Forming Strained-Semiconductor-on-Insulator Device Structures

    Thomas A. Langdo;Matthew T. Currie;Richard Hammond;Anthony J. Lochtefeld

  • Strained silicon MOSFET technology

    J.L. Hoyt;H.M. Nayfeh;S. Eguchi;I. Aberg

  • Extremely high electron mobility in Si/GexSi1−x structures grown by molecular beam epitaxy

    Y. J. Mii;Y. H. Xie;E. A. Fitzgerald;Don Monroe

  • Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers

    Michael E. Groenert;Christopher W. Leitz;Arthur J. Pitera;Vicky Yang

  • Semiconductor surface roughness: Dependence on sign and magnitude of bulk strain.

    Y. H. Xie;G. H. Gilmer;C. Roland;P. J. Silverman

  • Process for producing semiconductor product using graded epitaxial growth

    Dimitri A Antoniadis;Eugene A Fitzgerald;Judy L Hoyt;ディミトリ エイ アントニアディス

Frequent Co-Authors

Soo Jin Chua
Soo Jin Chua National University of Singapore
Matthew T. Currie
Matthew T. Currie Morgan, Lewis & Bockius LLP
Chuan Seng Tan
Chuan Seng Tan Nanyang Technological University
Steven A. Ringel
Steven A. Ringel The Ohio State University
Ya-Hong Xie
Ya-Hong Xie University of California, Los Angeles
Kin Leong Pey
Kin Leong Pey Singapore University of Technology and Design

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