What is he best known for?
The fields of study he is best known for:
- Semiconductor
- Optoelectronics
- Silicon
Eugene A. Fitzgerald mainly investigates Optoelectronics, Silicon, Substrate, Epitaxy and Semiconductor.
His studies in Optoelectronics integrate themes in fields like Crystallography, Dislocation, Electronic engineering and MOSFET.
Eugene A. Fitzgerald interconnects Luminescence, Wafer and Doping in the investigation of issues within Silicon.
His Substrate study combines topics from a wide range of disciplines, such as Semiconductor structure, Semiconductor device and Buffer.
His Epitaxy research incorporates elements of Single crystal, Mineralogy and Silicon-germanium.
Eugene A. Fitzgerald focuses mostly in the field of Semiconductor, narrowing it down to topics relating to Nanotechnology and, in certain cases, Insulator.
His most cited work include:
- Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors (779 citations)
- Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates (701 citations)
- Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing (558 citations)
What are the main themes of his work throughout his whole career to date?
Eugene A. Fitzgerald mostly deals with Optoelectronics, Silicon, Epitaxy, Substrate and Layer.
His is involved in several facets of Optoelectronics study, as is seen by his studies on Wafer, Heterojunction, Germanium, Semiconductor and Chemical vapor deposition.
In his research, Analytical chemistry and Raman spectroscopy is intimately related to Annealing, which falls under the overarching field of Germanium.
His study in Silicon is interdisciplinary in nature, drawing from both Electronic engineering, Doping, Gallium arsenide and Lattice constant.
His research investigates the connection between Epitaxy and topics such as Dislocation that intersect with issues in Surface roughness.
When carried out as part of a general Substrate research project, his work on Strained silicon is frequently linked to work in Communication channel, therefore connecting diverse disciplines of study.
He most often published in these fields:
- Optoelectronics (73.42%)
- Silicon (31.86%)
- Epitaxy (24.53%)
What were the highlights of his more recent work (between 2015-2021)?
- Optoelectronics (73.42%)
- Wafer (19.59%)
- Silicon (31.86%)
In recent papers he was focusing on the following fields of study:
Eugene A. Fitzgerald spends much of his time researching Optoelectronics, Wafer, Silicon, Epitaxy and Metalorganic vapour phase epitaxy.
Much of his study explores Optoelectronics relationship to Layer.
His Wafer research includes elements of Transistor, High-electron-mobility transistor, Gallium nitride and Si substrate.
His Silicon research incorporates themes from Diode, Substrate, Silicon oxide, Etching and Surface roughness.
The Epitaxy study combines topics in areas such as Annealing, Lattice constant, Superlattice and Dislocation.
His Metalorganic vapour phase epitaxy research also works with subjects such as
- Heterojunction that intertwine with fields like Bipolar junction transistor,
- Gallium arsenide which connect with Semiconductor, Triple junction and Solar cell,
- Residual stress, which have a strong connection to Insulator.
Between 2015 and 2021, his most popular works were:
- Remote epitaxy through graphene enables two-dimensional material-based layer transfer (175 citations)
- Low-threshold optically pumped lasing in highly strained germanium nanowires. (57 citations)
- Low-threshold optically pumped lasing in highly strained Ge nanowires (47 citations)
In his most recent research, the most cited papers focused on:
- Semiconductor
- Electrical engineering
- Silicon
Eugene A. Fitzgerald mainly focuses on Optoelectronics, Silicon, Epitaxy, Metalorganic vapour phase epitaxy and Wafer.
His studies deal with areas such as Substrate and Si substrate as well as Optoelectronics.
His research in Germanium and Silicon nitride are components of Silicon.
His Epitaxy study deals with Lattice constant intersecting with Heterojunction, Bipolar junction transistor, Breakdown voltage and Heterojunction bipolar transistor.
Eugene A. Fitzgerald has researched Wafer in several fields, including Transistor, High-electron-mobility transistor and Compound semiconductor.
Eugene A. Fitzgerald works mostly in the field of Dislocation, limiting it down to topics relating to Surface roughness and, in certain cases, Crystallography, Annealing, Analytical chemistry and Doping, as a part of the same area of interest.
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