World's Best Scientists 2026 revealed!
Eugene A. Fitzgerald

Eugene A. Fitzgerald

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
87
Citations
28374
World Ranking
346
National Ranking
166

Materials Science

D-Index
90
Citations
30646
World Ranking
1682
National Ranking
518

Eugene A. Fitzgerald publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Eugene A. Fitzgerald sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 562 publications — 88th percentile

88% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Eugene A. Fitzgerald D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Eugene A. Fitzgerald sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 87 D-Index — 95th percentile

95% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Eugene A. Fitzgerald is affiliated with MIT in the United States, contributing research primarily in the fields of engineering and physics and astronomy. Their work spans various subfields, including electrical and electronic engineering, atomic and molecular physics, optics, biomedical engineering, materials chemistry, and condensed matter physics.

The scientist's research topics prominently cover semiconductor materials and devices, semiconductor quantum structures and devices, photonic and optical devices, 3D IC and TSV technologies, advancements in semiconductor devices and circuit design, thin-film transistor technologies, and nanowire synthesis and applications.

Frequent publication venues for Eugene A. Fitzgerald include:

  • Journal of Semiconductors
  • ACS Applied Materials & Interfaces
  • Semiconductor Science and Technology
  • IEEE Transactions on Electron Devices
  • Materials Science in Semiconductor Processing

Recent papers authored or coauthored by Eugene A. Fitzgerald are:

  • A review of silicon-based wafer bonding processes, an approach to realize the monolithic integration of Si-CMOS and III-V-on-Si wafers (2021), Journal of Semiconductors
  • Freestanding High-Resolution Quantum Dot Color Converters with Small Pixel Sizes (2022), ACS Applied Materials & Interfaces
  • Effectiveness of InGaAs/GaAs superlattice dislocation filter layers epitaxially grown on 200 mm Si wafers with and without Ge buffers (2020), Semiconductor Science and Technology
  • CMOS-Compatible Ti/TiN/Al Refractory Ohmic Contact for GaAs Heterojunction Bipolar Transistors Grown on Ge/Si Substrate (2021), IEEE Transactions on Electron Devices
  • High-Frequency Characteristics of InGaP/GaAs Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 mm Ge/Si Wafers (2020), IEEE Journal of the Electron Devices Society

Coauthors frequently collaborating with Eugene A. Fitzgerald include:

  • Yue Wang
  • Chuan Seng Tan
  • Kenneth Eng Kian Lee
  • Kwang Hong Lee
  • Wan Khai Loke

The body of work of Eugene A. Fitzgerald reflects a focus on semiconductor research and device engineering, with an emphasis on emerging technologies in wafer bonding, quantum dot color converters, dislocation filter layers, and high-frequency characteristics of heterojunction bipolar transistors. The publications serve interdisciplinary research communities interested in semiconductor materials, microelectronic device fabrication, and photonic applications.

Best Publications

  • Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

    Minjoo L. Lee;Eugene A. Fitzgerald;Mayank T. Bulsara;Matthew T. Currie

  • Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates

    E. A. Fitzgerald;Y.‐H. Xie;M. L. Green;D. Brasen

  • Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing

    M. T. Currie;S. B. Samavedam;T. A. Langdo;C. W. Leitz

  • Dislocations in strained-layer epitaxy : theory, experiment, and applications

    E.A. Fitzgerald

  • Relaxed GexSi1−x structures for III–V integration with Si and high mobility two‐dimensional electron gases in Si

    E. A. Fitzgerald;Y.‐H. Xie;D. Monroe;P. J. Silverman

  • Coherent phonon heat conduction in superlattices.

    Maria N. Luckyanova;Jivtesh Garg;Keivan Esfarjani;Adam Jandl

  • Remote epitaxy through graphene enables two-dimensional material-based layer transfer

    Yunjo Kim;Samuel S. Cruz;Kyusang Lee;Babatunde O. Alawode

  • Impurity enhancement of the 1.54‐μm Er3+ luminescence in silicon

    J. Michel;J. L. Benton;R. F. Ferrante;D. C. Jacobson

  • Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same

    Matthew T. Currie;Anthony J. Lochtefeld;Richard Hammond;Eugene A. Fitzgerald

  • Strained-semiconductor-on-insulator device structures

    Anthony Lochtefeld;Thomas Langdo;Richard Hammond;Matthew Currie

  • Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area

    E. A. Fitzgerald;G. P. Watson;R. E. Proano;D. G. Ast

  • Luminescence and structural study of porous silicon films

    Y. H. Xie;W. L. Wilson;F. M. Ross;J. A. Mucha

  • Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates

    Minjoo L. Lee;C. W. Leitz;Z. Cheng;A. J. Pitera

  • KONTROLLE DER VERSPANNUNGSDICHTE DURCH VERWENDUNG VON GRADIENTENSCHICHTEN UND DURCH PLANARISIERUNG

    Eugene A. Fitzgerald

  • Methods of Forming Strained-Semiconductor-on-Insulator Device Structures

    Thomas A. Langdo;Matthew T. Currie;Richard Hammond;Anthony J. Lochtefeld

  • Strained silicon MOSFET technology

    J.L. Hoyt;H.M. Nayfeh;S. Eguchi;I. Aberg

  • Extremely high electron mobility in Si/GexSi1−x structures grown by molecular beam epitaxy

    Y. J. Mii;Y. H. Xie;E. A. Fitzgerald;Don Monroe

  • Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers

    Michael E. Groenert;Christopher W. Leitz;Arthur J. Pitera;Vicky Yang

  • Semiconductor surface roughness: Dependence on sign and magnitude of bulk strain.

    Y. H. Xie;G. H. Gilmer;C. Roland;P. J. Silverman

  • Process for producing semiconductor product using graded epitaxial growth

    Dimitri A Antoniadis;Eugene A Fitzgerald;Judy L Hoyt;ディミトリ エイ アントニアディス

Frequent Co-Authors

Soo Jin Chua
Soo Jin Chua National University of Singapore
Matthew T. Currie
Matthew T. Currie Morgan, Lewis & Bockius LLP
Chuan Seng Tan
Chuan Seng Tan Nanyang Technological University
Steven A. Ringel
Steven A. Ringel The Ohio State University
Ya-Hong Xie
Ya-Hong Xie University of California, Los Angeles
Kin Leong Pey
Kin Leong Pey Singapore University of Technology and Design

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