Eugene A. Fitzgerald mainly investigates Optoelectronics, Silicon, Substrate, Epitaxy and Semiconductor. His studies in Optoelectronics integrate themes in fields like Crystallography, Dislocation, Electronic engineering and MOSFET. Eugene A. Fitzgerald interconnects Luminescence, Wafer and Doping in the investigation of issues within Silicon.
His Substrate study combines topics from a wide range of disciplines, such as Semiconductor structure, Semiconductor device and Buffer. His Epitaxy research incorporates elements of Single crystal, Mineralogy and Silicon-germanium. Eugene A. Fitzgerald focuses mostly in the field of Semiconductor, narrowing it down to topics relating to Nanotechnology and, in certain cases, Insulator.
Eugene A. Fitzgerald mostly deals with Optoelectronics, Silicon, Epitaxy, Substrate and Layer. His is involved in several facets of Optoelectronics study, as is seen by his studies on Wafer, Heterojunction, Germanium, Semiconductor and Chemical vapor deposition. In his research, Analytical chemistry and Raman spectroscopy is intimately related to Annealing, which falls under the overarching field of Germanium.
His study in Silicon is interdisciplinary in nature, drawing from both Electronic engineering, Doping, Gallium arsenide and Lattice constant. His research investigates the connection between Epitaxy and topics such as Dislocation that intersect with issues in Surface roughness. When carried out as part of a general Substrate research project, his work on Strained silicon is frequently linked to work in Communication channel, therefore connecting diverse disciplines of study.
Eugene A. Fitzgerald spends much of his time researching Optoelectronics, Wafer, Silicon, Epitaxy and Metalorganic vapour phase epitaxy. Much of his study explores Optoelectronics relationship to Layer. His Wafer research includes elements of Transistor, High-electron-mobility transistor, Gallium nitride and Si substrate.
His Silicon research incorporates themes from Diode, Substrate, Silicon oxide, Etching and Surface roughness. The Epitaxy study combines topics in areas such as Annealing, Lattice constant, Superlattice and Dislocation. His Metalorganic vapour phase epitaxy research also works with subjects such as
Eugene A. Fitzgerald mainly focuses on Optoelectronics, Silicon, Epitaxy, Metalorganic vapour phase epitaxy and Wafer. His studies deal with areas such as Substrate and Si substrate as well as Optoelectronics. His research in Germanium and Silicon nitride are components of Silicon.
His Epitaxy study deals with Lattice constant intersecting with Heterojunction, Bipolar junction transistor, Breakdown voltage and Heterojunction bipolar transistor. Eugene A. Fitzgerald has researched Wafer in several fields, including Transistor, High-electron-mobility transistor and Compound semiconductor. Eugene A. Fitzgerald works mostly in the field of Dislocation, limiting it down to topics relating to Surface roughness and, in certain cases, Crystallography, Annealing, Analytical chemistry and Doping, as a part of the same area of interest.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
Minjoo L. Lee;Eugene A. Fitzgerald;Mayank T. Bulsara;Matthew T. Currie.
Journal of Applied Physics (2005)
Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates
E. A. Fitzgerald;Y.‐H. Xie;M. L. Green;D. Brasen.
Applied Physics Letters (1991)
Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing
M. T. Currie;S. B. Samavedam;T. A. Langdo;C. W. Leitz.
Applied Physics Letters (1998)
Dislocations in strained-layer epitaxy : theory, experiment, and applications
Materials Science Reports (1991)
Relaxed GexSi1−x structures for III–V integration with Si and high mobility two‐dimensional electron gases in Si
E. A. Fitzgerald;Y.‐H. Xie;D. Monroe;P. J. Silverman.
Journal of Vacuum Science & Technology B (1992)
Impurity enhancement of the 1.54‐μm Er3+ luminescence in silicon
J. Michel;J. L. Benton;R. F. Ferrante;D. C. Jacobson.
Journal of Applied Physics (1991)
Coherent phonon heat conduction in superlattices.
Maria N. Luckyanova;Jivtesh Garg;Keivan Esfarjani;Adam Jandl.
Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same
Matthew T. Currie;Anthony J. Lochtefeld;Richard Hammond;Eugene A. Fitzgerald.
Strained-semiconductor-on-insulator device structures
Anthony Lochtefeld;Thomas Langdo;Richard Hammond;Matthew Currie.
Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area
E. A. Fitzgerald;G. P. Watson;R. E. Proano;D. G. Ast.
Journal of Applied Physics (1989)
If you think any of the details on this page are incorrect, let us know.
We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below: