World's Best Scientists 2026 revealed!
Mantu K. Hudait

Mantu K. Hudait

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
41
Citations
6444
World Ranking
4317
National Ranking
1533

Mantu K. Hudait publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Mantu K. Hudait sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 220 publications — 36th percentile

36% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Mantu K. Hudait D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Mantu K. Hudait sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 41 D-Index — 39th percentile

39% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Mantu K. Hudait is affiliated with Virginia Tech in the United States and focuses on research primarily within the fields of Engineering and Physics and Astronomy. Their work spans a variety of specialized subfields including Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, Biomedical Engineering, Materials Chemistry, and Artificial Intelligence.

The main topics of Mantu K. Hudait's research include Photonic and Optical Devices, Semiconductor Quantum Structures and Devices, Semiconductor materials and devices, Nanowire Synthesis and Applications, Advancements in Semiconductor Devices and Circuit Design, Silicon Nanostructures and Photoluminescence, and Semiconductor materials and interfaces.

Recent papers by Hudait showcase active engagement in advancing semiconductor and photonic technologies. Some of these publications include:

  • "Design, Theoretical, and Experimental Investigation of Tensile-Strained Germanium Quantum-Well Laser Structure" (2021) published in ACS Applied Electronic Materials
  • "High carrier lifetimes in epitaxial germanium-tin/Al(In)As heterostructures with variable tin compositions" (2022) published in Journal of Materials Chemistry C

Other recent significant publications in the broader collaboration network include:

  • "Tri-gate GaN junction HEMT" (2020) in Applied Physics Letters
  • "Room-temperature intrinsic and extrinsic damping in polycrystalline Fe thin films" (2022) in Physical Review B
  • "Multivalley Electron Conduction at the Indirect-Direct Crossover Point in Highly Tensile-Strained Germanium" (2022) in Physical Review Applied

Hudait frequently publishes in venues such as ACS Applied Electronic Materials, Journal of Materials Chemistry C, IEEE Transactions on Electron Devices, Materials Advances, and Physical Review B. These journals align with their interdisciplinary work in materials chemistry, electrical engineering, and applied physics.

The research collaborations of Hudait involve recurring partnerships with several coauthors, including Michael Clavel, Sengunthar Karthikeyan, Rutwik Joshi, Steve Johnston, and Shuvodip Bhattacharya, with multiple joint publications indicating sustained collaborative efforts.

Best Publications

  • Advanced high-K gate dielectric for high-performance short-channel In 0.7 Ga 0.3 As quantum well field effect transistors on silicon substrate for low power logic applications

    M. Radosavljevic;B. Chu-Kung;S. Corcoran;G. Dewey

  • Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures

    M.K Hudait;P Venkateswarlu;P Venkateswarlu;S.B Krupanidhi

  • IEEE International Electron Devices Meeting

    M. Radosavljevic;T. Ashley;A. Andreev;S. D. Coomber

  • Germanium Based Field-Effect Transistors: Challenges and Opportunities

    Patrick S. Goley;Mantu K. Hudait

  • Effects of thin oxide in metal-semiconductor and metal-insulator-semiconductor epi-GaAs Schottky diodes

    Mantu Kumar Hudait;Mantu Kumar Hudait;S.B. Krupanidhi

  • Single-junction InGaP/GaAs solar cells grown on Si substrates with SiGe buffer layers

    S. A. Ringel;J. A. Carlin;C. L. Andre;M. K. Hudait

  • Doping dependence of the barrier height and ideality factor of Au/n-GaAs schottky diodes at low temperatures

    M.K Hudait;M.K Hudait;S.B Krupanidhi

  • High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC=0.5V) logic applications

    M. Radosavljevic;T. Ashley;A. Andreev;S.D. Coomber

  • Ultrahigh-Speed 0.5 V Supply Voltage $\hbox{In}_{0.7} \hbox{Ga}_{0.3}\hbox{As}$ Quantum-Well Transistors on Silicon Substrate

    S. Datta;G. Dewey;J.M. Fastenau;M.K. Hudait

  • Group III-V devices with delta-doped layer under channel region

    Mantu K. Hudait;Peter G. Tolchinsky;Robert S. Chau;Marko Radosavljevic

  • Control of oxygen vacancies and Ce +3 concentrations in doped ceria nanoparticles via the selection of lanthanide element

    N. Shehata;N. Shehata;K. Meehan;M. Hudait;N. Jain

  • III–V Multijunction Solar Cell Integration with Silicon: Present Status, Challenges and Future Outlook

    Nikhil Jain;Mantu K. Hudait

  • Interface states density distribution in Au/n-GaAs Schottky diodes on n-Ge and n-GaAs substrates

    M.K. Hudait;S.B. Krupanidhi

  • Barrier-Engineered Arsenide–Antimonide Heterojunction Tunnel FETs With Enhanced Drive Current

    D. Mohata;B. Rajamohanan;T. Mayer;M. Hudait

  • Effect of twinning on the photoluminescence and photoelectrochemical properties of indium phosphide nanowires grown on silicon (111).

    Robyn L. Woo;Rui Xiao;Yoji Kobayashi;Li Gao

  • The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor

    H. D. Trinh;Edward Yi Chang;Pu-Wei Wu;Y. Y. Wong

  • Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3

    A. Ali;H. S. Madan;A. P. Kirk;D. A. Zhao

  • Carrier Transport in High-Mobility III–V Quantum-Well Transistors and Performance Impact for High-Speed Low-Power Logic Applications

    G. Dewey;M.K. Hudait;Kangho Lee;R. Pillarisetty

  • Heterogeneous integration of enhancement mode in 0.7 ga 0.3 as quantum well transistor on silicon substrate using thin (les 2 μm) composite buffer architecture for high-speed and low-voltage ( 0.5 v) logic applications

    M.K. Hudait;G. Dewey;S. Datta;J.M. Fastenau

  • Anomalous current transport in Au/low-doped n-GaAs Schottky barrier diodes at low temperatures

    S Hardikar;MK Hudait;P Modak;SB Krupanidhi

  • Modulation-doped multi-gate devices

    Mantu K. Hudait;Ravi Pillarisetty;Marko Radosavljevic;Gilbert Dewey

  • Self-Catalyzed Epitaxial Growth of Vertical Indium Phosphide Nanowires on Silicon

    Li Gao;Robyn L. Woo;Baolai Liang;Marta Pozuelo

Frequent Co-Authors

Suman Datta
Suman Datta Georgia Institute of Technology
Marko Radosavljevic
Marko Radosavljevic Intel (United States)
S. B. Krupanidhi
S. B. Krupanidhi Indian Institute of Science
Steven A. Ringel
Steven A. Ringel The Ohio State University
jack t kavalieros
jack t kavalieros Intel (United States)
Robert S. Chau
Robert S. Chau Intel (United States)
Shashank Priya
Shashank Priya Pennsylvania State University
Wu Lu
Wu Lu The Ohio State University
Edward Yi Chang
Edward Yi Chang National Yang Ming Chiao Tung University
Robert J. Bodnar
Robert J. Bodnar Virginia Tech

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