Mantu K. Hudait

Overview

Best Publications

• Advanced high-K gate dielectric for high-performance short-channel In 0.7 Ga 0.3 As quantum well field effect transistors on silicon substrate for low power logic applications

  M. Radosavljevic;B. Chu-Kung;S. Corcoran;G. Dewey

  238
  Citations

• Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures

  M.K Hudait;P Venkateswarlu;P Venkateswarlu;S.B Krupanidhi

  228
  Citations

• IEEE International Electron Devices Meeting

  M. Radosavljevic;T. Ashley;A. Andreev;S. D. Coomber

  219
  Citations

• Germanium Based Field-Effect Transistors: Challenges and Opportunities

  Patrick S. Goley;Mantu K. Hudait

  198
  Citations

• Effects of thin oxide in metal-semiconductor and metal-insulator-semiconductor epi-GaAs Schottky diodes

  Mantu Kumar Hudait;Mantu Kumar Hudait;S.B. Krupanidhi

  183
  Citations

• Single-junction InGaP/GaAs solar cells grown on Si substrates with SiGe buffer layers

  S. A. Ringel;J. A. Carlin;C. L. Andre;M. K. Hudait

  168
  Citations

• Doping dependence of the barrier height and ideality factor of Au/n-GaAs schottky diodes at low temperatures

  M.K Hudait;M.K Hudait;S.B Krupanidhi

  168
  Citations

• High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC=0.5V) logic applications

  M. Radosavljevic;T. Ashley;A. Andreev;S.D. Coomber

  148
  Citations

• Ultrahigh-Speed 0.5 V Supply Voltage $\hbox{In}_{0.7} \hbox{Ga}_{0.3}\hbox{As}$ Quantum-Well Transistors on Silicon Substrate

  S. Datta;G. Dewey;J.M. Fastenau;M.K. Hudait

  130
  Citations

• Group III-V devices with delta-doped layer under channel region

  Mantu K. Hudait;Peter G. Tolchinsky;Robert S. Chau;Marko Radosavljevic

  125
  Citations

• Control of oxygen vacancies and Ce +3 concentrations in doped ceria nanoparticles via the selection of lanthanide element

  N. Shehata;N. Shehata;K. Meehan;M. Hudait;N. Jain

  119
  Citations

• III–V Multijunction Solar Cell Integration with Silicon: Present Status, Challenges and Future Outlook

  Nikhil Jain;Mantu K. Hudait

  118
  Citations

• Interface states density distribution in Au/n-GaAs Schottky diodes on n-Ge and n-GaAs substrates

  M.K. Hudait;S.B. Krupanidhi

  118
  Citations

• Barrier-Engineered Arsenide–Antimonide Heterojunction Tunnel FETs With Enhanced Drive Current

  D. Mohata;B. Rajamohanan;T. Mayer;M. Hudait

  117
  Citations

• Effect of twinning on the photoluminescence and photoelectrochemical properties of indium phosphide nanowires grown on silicon (111).

  Robyn L. Woo;Rui Xiao;Yoji Kobayashi;Li Gao

  111
  Citations

• The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor

  H. D. Trinh;Edward Yi Chang;Pu-Wei Wu;Y. Y. Wong

  110
  Citations

• Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3

  A. Ali;H. S. Madan;A. P. Kirk;D. A. Zhao

  110
  Citations

• Carrier Transport in High-Mobility III–V Quantum-Well Transistors and Performance Impact for High-Speed Low-Power Logic Applications

  G. Dewey;M.K. Hudait;Kangho Lee;R. Pillarisetty

  110
  Citations

• Heterogeneous integration of enhancement mode in 0.7 ga 0.3 as quantum well transistor on silicon substrate using thin (les 2 μm) composite buffer architecture for high-speed and low-voltage ( 0.5 v) logic applications

  M.K. Hudait;G. Dewey;S. Datta;J.M. Fastenau

  107
  Citations

• Anomalous current transport in Au/low-doped n-GaAs Schottky barrier diodes at low temperatures

  S Hardikar;MK Hudait;P Modak;SB Krupanidhi

  105
  Citations

• Modulation-doped multi-gate devices

  Mantu K. Hudait;Ravi Pillarisetty;Marko Radosavljevic;Gilbert Dewey

  100
  Citations

• Self-Catalyzed Epitaxial Growth of Vertical Indium Phosphide Nanowires on Silicon

  Li Gao;Robyn L. Woo;Baolai Liang;Marta Pozuelo

  96
  Citations