World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
46
Citations
10327
World Ranking
3337
National Ranking
1237

Materials Science

D-Index
47
Citations
10524
World Ranking
11023
National Ranking
2590

Matthew T. Currie publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Matthew T. Currie sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 80 publications — 2nd percentile

2% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Matthew T. Currie D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Matthew T. Currie sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 46 D-Index — 52nd percentile

52% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Matthew T. Currie is affiliated with Morgan, Lewis & Bockius LLP in the United States. The professional background positions them within a prominent law firm, indicating a career likely intersecting with legal research or academic inquiry related to the legal field.

There are no recent papers, co-authors, or publication venues listed for Matthew T. Currie.

There are also no main fields or subfields of study documented, nor are there records of book publications or numbered topics of work available.

Information on awards or honors attributed to Matthew T. Currie is not present.

Best Publications

  • Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

    Minjoo L. Lee;Eugene A. Fitzgerald;Mayank T. Bulsara;Matthew T. Currie

  • Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing

    M. T. Currie;S. B. Samavedam;T. A. Langdo;C. W. Leitz

  • Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same

    Matthew T. Currie;Anthony J. Lochtefeld;Richard Hammond;Eugene A. Fitzgerald

  • Strained-semiconductor-on-insulator device structures

    Anthony Lochtefeld;Thomas Langdo;Richard Hammond;Matthew Currie

  • Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates

    Minjoo L. Lee;C. W. Leitz;Z. Cheng;A. J. Pitera

  • Methods of Forming Strained-Semiconductor-on-Insulator Device Structures

    Thomas A. Langdo;Matthew T. Currie;Richard Hammond;Anthony J. Lochtefeld

  • Hybrid fin field-effect transistor structures and related methods

    Matthew T. Currie

  • Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates

    M. T. Currie;C. W. Leitz;T. A. Langdo;G. Taraschi

  • Lattice-Mismatched Semiconductor Structures with Reduced Dislocation Defect Densities and Related Methods for Device Fabrication

    Anthony J. Lochtefeld;Matthew T. Currie;Zhiyuan Cheng;James Fiorenza

  • High quality Ge on Si by epitaxial necking

    T. A. Langdo;C. W. Leitz;M. T. Currie;E. A. Fitzgerald

  • Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates

    Zhi-Yuan Cheng;M.T. Currie;C.W. Leitz;G. Taraschi

  • Hole mobility enhancements in strained Si/Si1-yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1-xGex (x<y) virtual substrates

    C. W. Leitz;M. T. Currie;Minjoo Lawrence Lee;Z. Y. Cheng

  • High-quality germanium photodiodes integrated on silicon substrates using optimized relaxed graded buffers

    S. B. Samavedam;M. T. Currie;T. A. Langdo;E. A. Fitzgerald

  • Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal-oxide-semiconductor field-effect transistors

    C. W. Leitz;M. T. Currie;Minjoo Lawrence Lee;Z. Y. Cheng

  • Shallow trench isolation process

    Matthew T. Currie;Anthony J. Lochtefeld

  • Method of selective removal of SiGe alloys

    Richard Hammond;Matthew Currie

  • Dislocation dynamics in relaxed graded composition semiconductors

    E.A Fitzgerald;A.Y Kim;M.T Currie;T.A Langdo

  • Methods for fabricating strained layers on semiconductor substrates

    Eugene Fitzgerald;Matthew Currie

  • Crack formation in GaAs heteroepitaxial films on Si and SiGe virtual substrates

    V. K. Yang;M. Groenert;C. W. Leitz;A. J. Pitera

  • RF Circuits Including Transistors Having Strained Material Layers

    Glyn Braithwaite;Richard Hammond;Matthew T. Currie

Frequent Co-Authors

anthony j lochtefeld
anthony j lochtefeld Taiwan Semiconductor Manufacturing Company (United States)
Minjoo Larry Lee
Minjoo Larry Lee University of Illinois at Urbana-Champaign
Steven A. Ringel
Steven A. Ringel The Ohio State University
Jeffrey T. Borenstein
Jeffrey T. Borenstein Draper Laboratory
Joseph C. Woicik
Joseph C. Woicik National Institute of Standards and Technology
Mantu K. Hudait
Mantu K. Hudait Virginia Tech
Qi Xiang
Qi Xiang Xilinx (United States)

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Related Online Degrees & Career Pathways

For students pursuing Electronics and Electrical Engineering in the USA, exploring related online degrees can offer added flexibility and career options. Many reputable institutions now offer online programs with online colleges with flexible start dates, allowing learners to begin their studies at convenient times without waiting for traditional semester schedules.

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Career pathways in this domain can also suit various personality types. For example, there are numerous careers for introverts within engineering and technical roles that require focused, independent work rather than extensive interpersonal interaction.

Additionally, combining technical expertise with management skills is a smart move. Pursuing an accelerated project management degree online can prepare you to lead complex engineering projects efficiently, enhancing your leadership opportunities in the tech industry.

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