Matthew T. Currie

Overview

Best Publications

• Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

  Minjoo L. Lee;Eugene A. Fitzgerald;Mayank T. Bulsara;Matthew T. Currie

  1293
  Citations

• Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing

  M. T. Currie;S. B. Samavedam;T. A. Langdo;C. W. Leitz

  765
  Citations

• Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same

  Matthew T. Currie;Anthony J. Lochtefeld;Richard Hammond;Eugene A. Fitzgerald

  471
  Citations

• Strained-semiconductor-on-insulator device structures

  Anthony Lochtefeld;Thomas Langdo;Richard Hammond;Matthew Currie

  435
  Citations

• Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates

  Minjoo L. Lee;C. W. Leitz;Z. Cheng;A. J. Pitera

  409
  Citations

• Methods of Forming Strained-Semiconductor-on-Insulator Device Structures

  Thomas A. Langdo;Matthew T. Currie;Richard Hammond;Anthony J. Lochtefeld

  386
  Citations

• Hybrid fin field-effect transistor structures and related methods

  Matthew T. Currie

  350
  Citations

• Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates

  M. T. Currie;C. W. Leitz;T. A. Langdo;G. Taraschi

  331
  Citations

• Lattice-Mismatched Semiconductor Structures with Reduced Dislocation Defect Densities and Related Methods for Device Fabrication

  Anthony J. Lochtefeld;Matthew T. Currie;Zhiyuan Cheng;James Fiorenza

  329
  Citations

• High quality Ge on Si by epitaxial necking

  T. A. Langdo;C. W. Leitz;M. T. Currie;E. A. Fitzgerald

  321
  Citations

• Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates

  Zhi-Yuan Cheng;M.T. Currie;C.W. Leitz;G. Taraschi

  300
  Citations

• Hole mobility enhancements in strained Si/Si1-yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1-xGex (x<y) virtual substrates

  C. W. Leitz;M. T. Currie;Minjoo Lawrence Lee;Z. Y. Cheng

  255
  Citations

• High-quality germanium photodiodes integrated on silicon substrates using optimized relaxed graded buffers

  S. B. Samavedam;M. T. Currie;T. A. Langdo;E. A. Fitzgerald

  237
  Citations

• Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal-oxide-semiconductor field-effect transistors

  C. W. Leitz;M. T. Currie;Minjoo Lawrence Lee;Z. Y. Cheng

  221
  Citations

• Shallow trench isolation process

  Matthew T. Currie;Anthony J. Lochtefeld

  217
  Citations

• Method of selective removal of SiGe alloys

  Richard Hammond;Matthew Currie

  193
  Citations

• Dislocation dynamics in relaxed graded composition semiconductors

  E.A Fitzgerald;A.Y Kim;M.T Currie;T.A Langdo

  191
  Citations

• Methods for fabricating strained layers on semiconductor substrates

  Eugene Fitzgerald;Matthew Currie

  190
  Citations

• Crack formation in GaAs heteroepitaxial films on Si and SiGe virtual substrates

  V. K. Yang;M. Groenert;C. W. Leitz;A. J. Pitera

  188
  Citations

• RF Circuits Including Transistors Having Strained Material Layers

  Glyn Braithwaite;Richard Hammond;Matthew T. Currie

  180
  Citations