What is he best known for?
The fields of study he is best known for:
- Semiconductor
- Silicon
- Optoelectronics
Matthew T. Currie mainly investigates Optoelectronics, Silicon, MOSFET, Electron mobility and Field-effect transistor.
His research investigates the connection with Optoelectronics and areas like Chemical-mechanical planarization which intersect with concerns in Surface roughness.
He studies Silicon, focusing on Germanium in particular.
His MOSFET study which covers CMOS that intersects with Saturation.
His Field-effect transistor research is multidisciplinary, incorporating perspectives in Ultimate tensile strength, Substrate, Heterojunction and Silicon dioxide.
The Semiconductor study combines topics in areas such as Threading dislocations and Nanotechnology.
His most cited work include:
- Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors (779 citations)
- Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing (558 citations)
- Strained-semiconductor-on-insulator device structures (353 citations)
What are the main themes of his work throughout his whole career to date?
His main research concerns Optoelectronics, Semiconductor, Silicon, Layer and Semiconductor device.
His work deals with themes such as Dislocation, Substrate and MOSFET, which intersect with Optoelectronics.
Within one scientific family, Matthew T. Currie focuses on topics pertaining to Electron mobility under MOSFET, and may sometimes address concerns connected to Wafer bonding and Field-effect transistor.
His Semiconductor study integrates concerns from other disciplines, such as Nanotechnology, Insulator and Homogeneity.
Matthew T. Currie has included themes like Chemical vapor deposition, Doping and Epitaxy in his Silicon study.
In general Layer, his work in Semiconductor structure is often linked to Diffusion linking many areas of study.
He most often published in these fields:
- Optoelectronics (76.47%)
- Semiconductor (33.33%)
- Silicon (27.45%)
What were the highlights of his more recent work (between 2005-2015)?
- Optoelectronics (76.47%)
- Semiconductor (33.33%)
- Semiconductor device (17.65%)
In recent papers he was focusing on the following fields of study:
His primary areas of investigation include Optoelectronics, Semiconductor, Semiconductor device, Insulator and Nanotechnology.
His work in the fields of Optoelectronics, such as Semiconductor structure, Silicon and Doping, intersects with other areas such as Strained silicon.
Matthew T. Currie has researched Silicon in several fields, including Wafer and Deposition.
In his study, which falls under the umbrella issue of Semiconductor, Yield and Dislocation is strongly linked to Layer.
Matthew T. Currie works mostly in the field of Semiconductor device, limiting it down to topics relating to Heterojunction and, in certain cases, Threading dislocations, Lattice, Relaxation and Buffer.
The study incorporates disciplines such as Double gate and Dielectric in addition to Insulator.
Between 2005 and 2015, his most popular works were:
- Lattice-Mismatched Semiconductor Structures with Reduced Dislocation Defect Densities and Related Methods for Device Fabrication (320 citations)
- Hybrid fin field-effect transistor structures and related methods (207 citations)
- Solutions integrated circuit integration of alternative active area materials (98 citations)
In his most recent research, the most cited papers focused on:
- Semiconductor
- Integrated circuit
- Silicon
Matthew T. Currie spends much of his time researching Optoelectronics, Semiconductor, Semiconductor device, Silicon and Crystalline semiconductor.
His research in Optoelectronics intersects with topics in Fin field effect transistor and Surface layer.
His Semiconductor research includes elements of Double gate and Insulator.
His Semiconductor device research is multidisciplinary, incorporating elements of Threading dislocations, Lattice and Heterojunction, Semiconductor heterostructures.
His Silicon research includes themes of Layer, Semiconductor structure and Substrate.
He incorporates Crystalline semiconductor and Engineering physics in his studies.
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