J. M. Hartmann

Overview

Best Publications

• Lasing in direct-bandgap GeSn alloy grown on Si

  S. Wirths;R. Geiger;R. Geiger;N. von den Driesch;G. Mussler

  1360
  Citations

• Advances, challenges and opportunities in 3D CMOS sequential integration

  P. Batude;M. Vinet;B. Previtali;C. Tabone

  325
  Citations

• Advances in 3D CMOS sequential integration

  P. Batude;M. Vinet;A. Pouydebasque;C. Le Royer

  304
  Citations

• Reduced pressure–chemical vapor deposition of Ge thick layers on Si(001) for 1.3–1.55-μm photodetection

  J. M. Hartmann;A. Abbadie;A. M. Papon;P. Holliger

  298
  Citations

• Optically Pumped GeSn Microdisk Lasers on Si

  Daniela Stange;Stephan Wirths;Richard Geiger;Christian Schulte-Braucks

  261
  Citations

• A stacked SONOS technology, up to 4 levels and 6nm crystalline nanowires, with Gate-All-Around or independent gates (φ-Flash), suitable for full 3D integration

  A. Hubert;E. Nowak;K. Tachi;V. Maffini-Alvaro

  247
  Citations

• Ultra-low threshold cw and pulsed lasing in tensile strained GeSn alloys

  A. Elbaz;D. Buca;N. Von den Driesch;K. Pantzas

  219
  Citations

• Low-loss germanium strip waveguides on silicon for the mid-infrared

  Yu-Chi Chang;Vincent Paeder;Lubos Hvozdara;Jean-Michel Hartmann

  210
  Citations

• Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys

  Anas Elbaz;Anas Elbaz;Dan Buca;Nils von den Driesch;Nils von den Driesch;Konstantinos Pantzas

  196
  Citations

• Reduced pressure-chemical vapor deposition of intrinsic and doped Ge layers on Si(0 0 1) for microelectronics and optoelectronics purposes

  J.M. Hartmann;J.-F. Damlencourt;Y. Bogumilowicz;P. Holliger

  193
  Citations

• Mid-infrared octave spanning supercontinuum generation to 8.5 μm in silicon-germanium waveguides

  Milan Sinobad;Christelle Monat;Barry Luther-davies;Pan Ma

  192
  Citations

• Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μm up to 180 K

  V. Reboud;A. Gassenq;N. Pauc;J. Aubin

  192
  Citations

• Improved precision in strain measurement using nanobeam electron diffraction

  A. Béché;J. L. Rouvière;L. Clément;J. M. Hartmann

  191
  Citations

• Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors

  S. Wirths;A. T. Tiedemann;Zoran Ikonic;P. Harrison

  190
  Citations

• 15nm-diameter 3D stacked nanowires with independent gates operation: ΦFET

  C. Dupre;A. Hubert;S. Becu;M. Jublot

  185
  Citations

• Germanium-on-insulator (GeOI) substrates—A novel engineered substrate for future high performance devices

  Takeshi Akatsu;Chrystel Deguet;Loic Sanchez;Frédéric Allibert

  184
  Citations

• Chemical vapour etching of Si, SiGe and Ge with HCl; applications to the formation of thin relaxed SiGe buffers and to the revelation of threading dislocations

  Y Bogumilowicz;J M Hartmann;R Truche;Y Campidelli

  182
  Citations

• 3D monolithic integration

  P. Batude;M. Vinet;A. Pouydebasque;C. Le Royer

  181
  Citations

• Novel integration process and performances analysis of Low STandby Power (LSTP) 3D multi-channel CMOSFET (MCFET) on SOI with metal / high-K gate stack

  E. Bernard;T. Ernst;B. Guillaumot;N. Vulliet

  176
  Citations

• Germanium avalanche receiver for low power interconnects.

  Léopold Virot;Paul Crozat;Jean-Marc Fédéli;Jean-Michel Hartmann

  170
  Citations

• Performance of Omega-Shaped-Gate Silicon Nanowire MOSFET With Diameter Down to 8 nm

  S. Barraud;R. Coquand;M. Casse;M. Koyama

  166
  Citations

• Chemical vapor deposition of Ge nanocrystals on SiO2

  T. Baron;B. Pelissier;L. Perniola;F. Mazen

  163
  Citations

• Engineering strained silicon on insulator wafers with the Smart CutTM technology

  B. Ghyselen;J.-M. Hartmann;T. Ernst;C. Aulnette

  162
  Citations