World's Best Scientists 2026 revealed!
J. M. Hartmann

J. M. Hartmann

D-Index & Metrics

Materials Science

D-Index
78
Citations
21363
World Ranking
2984
National Ranking
57

J. M. Hartmann publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where J. M. Hartmann sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 769 publications — 96th percentile

96% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

J. M. Hartmann D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where J. M. Hartmann sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 78 D-Index — 77th percentile

77% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

J. M. Hartmann is affiliated with CEA LETI in France, focusing on research in engineering and physics, particularly within electrical and electronic engineering and atomic and molecular physics. Their work addresses several specialized areas including photonic and optical devices, semiconductor quantum structures and devices, and semiconductor lasers and optical devices.

The scientist's contributions are distributed across fields such as materials chemistry and biomedical engineering, reflecting a multidisciplinary approach. Their research themes also encompass advanced fiber optic sensors, silicon nanostructures and photoluminescence, and nanowire synthesis and applications.

Hartmann has published multiple papers in peer-reviewed venues, showcasing topics ranging from materials science to crystal growth and applied surface science. Their selected recent papers include:

  • Impact of the growth strategy and device fabrication on the alloy homogeneity in optoelectronic grade Sn-rich GeSn (2020) published in Materials Science and Engineering B
  • Heteroepitaxy of GaAs on Ge buffered silicon substrates: Nucleation and crystalline defects (2025) published in Journal of Crystal Growth
  • Transfer of 200 mm GeSn wafers using bonded etch-back silicon-on-insulator process (2025) published in Applied Surface Science

Frequent collaborators in Hartmann's research include Vincent Reboud, N. Pauc, A. Chelnokov, V. Calvo, and Jaime Segura-Ruiz. These partnerships have contributed to multiple publications, indicating ongoing collaborative efforts.

Publication venues indicate a concentration in specialized journals such as Materials Science and Engineering B, Journal of Crystal Growth, and Applied Surface Science, each hosting one of their papers.

Best Publications

  • Lasing in direct-bandgap GeSn alloy grown on Si

    S. Wirths;R. Geiger;R. Geiger;N. von den Driesch;G. Mussler

  • Advances, challenges and opportunities in 3D CMOS sequential integration

    P. Batude;M. Vinet;B. Previtali;C. Tabone

  • Advances in 3D CMOS sequential integration

    P. Batude;M. Vinet;A. Pouydebasque;C. Le Royer

  • Reduced pressure–chemical vapor deposition of Ge thick layers on Si(001) for 1.3–1.55-μm photodetection

    J. M. Hartmann;A. Abbadie;A. M. Papon;P. Holliger

  • Optically Pumped GeSn Microdisk Lasers on Si

    Daniela Stange;Stephan Wirths;Richard Geiger;Christian Schulte-Braucks

  • A stacked SONOS technology, up to 4 levels and 6nm crystalline nanowires, with Gate-All-Around or independent gates (φ-Flash), suitable for full 3D integration

    A. Hubert;E. Nowak;K. Tachi;V. Maffini-Alvaro

  • Ultra-low threshold cw and pulsed lasing in tensile strained GeSn alloys

    A. Elbaz;D. Buca;N. Von den Driesch;K. Pantzas

  • Low-loss germanium strip waveguides on silicon for the mid-infrared

    Yu-Chi Chang;Vincent Paeder;Lubos Hvozdara;Jean-Michel Hartmann

  • Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys

    Anas Elbaz;Anas Elbaz;Dan Buca;Nils von den Driesch;Nils von den Driesch;Konstantinos Pantzas

  • Reduced pressure-chemical vapor deposition of intrinsic and doped Ge layers on Si(0 0 1) for microelectronics and optoelectronics purposes

    J.M. Hartmann;J.-F. Damlencourt;Y. Bogumilowicz;P. Holliger

  • Mid-infrared octave spanning supercontinuum generation to 8.5 μm in silicon-germanium waveguides

    Milan Sinobad;Christelle Monat;Barry Luther-davies;Pan Ma

  • Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μm up to 180 K

    V. Reboud;A. Gassenq;N. Pauc;J. Aubin

  • Improved precision in strain measurement using nanobeam electron diffraction

    A. Béché;J. L. Rouvière;L. Clément;J. M. Hartmann

  • Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors

    S. Wirths;A. T. Tiedemann;Zoran Ikonic;P. Harrison

  • 15nm-diameter 3D stacked nanowires with independent gates operation: ΦFET

    C. Dupre;A. Hubert;S. Becu;M. Jublot

  • Germanium-on-insulator (GeOI) substrates—A novel engineered substrate for future high performance devices

    Takeshi Akatsu;Chrystel Deguet;Loic Sanchez;Frédéric Allibert

  • Chemical vapour etching of Si, SiGe and Ge with HCl; applications to the formation of thin relaxed SiGe buffers and to the revelation of threading dislocations

    Y Bogumilowicz;J M Hartmann;R Truche;Y Campidelli

  • 3D monolithic integration

    P. Batude;M. Vinet;A. Pouydebasque;C. Le Royer

  • Novel integration process and performances analysis of Low STandby Power (LSTP) 3D multi-channel CMOSFET (MCFET) on SOI with metal / high-K gate stack

    E. Bernard;T. Ernst;B. Guillaumot;N. Vulliet

  • Germanium avalanche receiver for low power interconnects.

    Léopold Virot;Paul Crozat;Jean-Marc Fédéli;Jean-Michel Hartmann

  • Performance of Omega-Shaped-Gate Silicon Nanowire MOSFET With Diameter Down to 8 nm

    S. Barraud;R. Coquand;M. Casse;M. Koyama

  • Chemical vapor deposition of Ge nanocrystals on SiO2

    T. Baron;B. Pelissier;L. Perniola;F. Mazen

  • Engineering strained silicon on insulator wafers with the Smart CutTM technology

    B. Ghyselen;J.-M. Hartmann;T. Ernst;C. Aulnette

Frequent Co-Authors

S. Mantl
S. Mantl Forschungszentrum Jülich
O. Faynot
O. Faynot CEA LETI
Thomas Ernst
Thomas Ernst Grenoble Alpes University
Qing-Tai Zhao
Qing-Tai Zhao Peking University
Zoran Ikonic
Zoran Ikonic University of Leeds
Gerard Ghibaudo
Gerard Ghibaudo Grenoble Alpes University
Hans Sigg
Hans Sigg Paul Scherrer Institute
Jérôme Faist
Jérôme Faist ETH Zurich
Maud Vinet
Maud Vinet Grenoble Alpes University

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