D-Index & Metrics Best Publications
Electronics and Electrical Engineering
France
2022

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 60 Citations 13,009 714 World Ranking 968 National Ranking 12

Research.com Recognitions

Awards & Achievements

2022 - Research.com Electronics and Electrical Engineering in France Leader Award

2001 - IEEE Fellow For contributions to Silicon-on-Insulator device physics, technology, and characterization.

Overview

What is he best known for?

The fields of study he is best known for:

  • Transistor
  • Semiconductor
  • MOSFET

His primary areas of investigation include Optoelectronics, Silicon on insulator, MOSFET, Electrical engineering and Transistor. His Optoelectronics study incorporates themes from Field-effect transistor, Voltage, Transconductance and Threshold voltage. His study with Silicon on insulator involves better knowledge in Silicon.

Sorin Cristoloveanu interconnects Nanotechnology, Electronic engineering, CMOS, Biasing and Gate oxide in the investigation of issues within MOSFET. His Electrical engineering research is multidisciplinary, incorporating perspectives in Dram, Condensed matter physics and Pulse. His Transistor research is multidisciplinary, incorporating elements of Buried oxide, Absorbed dose, Doping, Logic gate and Wide-bandgap semiconductor.

His most cited work include:

  • Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance (648 citations)
  • Frontiers of silicon-on-insulator (642 citations)
  • Electrical Characterization of Silicon-on-Insulator Materials and Devices (344 citations)

What are the main themes of his work throughout his whole career to date?

Sorin Cristoloveanu mainly investigates Optoelectronics, Silicon on insulator, MOSFET, Transistor and Electrical engineering. His study in Optoelectronics is interdisciplinary in nature, drawing from both Threshold voltage, Voltage, Transconductance and Field-effect transistor. As a part of the same scientific family, Sorin Cristoloveanu mostly works in the field of Silicon on insulator, focusing on Wafer and, on occasion, Characterization.

His biological study spans a wide range of topics, including Metal gate, Gate oxide, Coupling, Condensed matter physics and Biasing. As part of one scientific family, he deals mainly with the area of Transistor, narrowing it down to issues related to the Dram, and often Capacitor. Sorin Cristoloveanu does research in Electrical engineering, focusing on Breakdown voltage specifically.

He most often published in these fields:

  • Optoelectronics (73.69%)
  • Silicon on insulator (63.53%)
  • MOSFET (41.11%)

What were the highlights of his more recent work (between 2012-2021)?

  • Optoelectronics (73.69%)
  • Silicon on insulator (63.53%)
  • MOSFET (41.11%)

In recent papers he was focusing on the following fields of study:

His primary scientific interests are in Optoelectronics, Silicon on insulator, MOSFET, Transistor and Electrical engineering. His research in Optoelectronics intersects with topics in Threshold voltage and Voltage. His Silicon on insulator research incorporates themes from Wafer, Characterization, Electronic engineering, Logic gate and Biasing.

His Electronic engineering study combines topics from a wide range of disciplines, such as Coupling and Capacitor. His work focuses on many connections between MOSFET and other disciplines, such as Substrate, that overlap with his field of interest in Responsivity. The Transconductance and Field-effect transistor research he does as part of his general Transistor study is frequently linked to other disciplines of science, such as Planar, therefore creating a link between diverse domains of science.

Between 2012 and 2021, his most popular works were:

  • High-Performance GaN-Based Nanochannel FinFETs With/Without AlGaN/GaN Heterostructure (72 citations)
  • A Review of Sharp-Switching Devices for Ultra-Low Power Applications (57 citations)
  • Normally Off Single-Nanoribbon $\hbox{Al}{2} \hbox{O}{3}\hbox{/GaN}$ MISFET (52 citations)

In his most recent research, the most cited papers focused on:

  • Transistor
  • Semiconductor
  • MOSFET

The scientist’s investigation covers issues in Optoelectronics, Silicon on insulator, MOSFET, Electrical engineering and Transistor. His Optoelectronics research is multidisciplinary, relying on both Threshold voltage, Transconductance, Nanotechnology and Field-effect transistor. His studies deal with areas such as Dram, Photodetector, Subthreshold slope, Logic gate and Electrostatic discharge as well as Silicon on insulator.

His MOSFET research incorporates elements of Wafer, Electron mobility, High voltage, Biasing and Electronic engineering. His work is dedicated to discovering how Electrical engineering, Silicon are connected with Stress and Epitaxy and other disciplines. His work on Heterostructure-emitter bipolar transistor as part of general Transistor research is often related to Planar, thus linking different fields of science.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Frontiers of silicon-on-insulator

G. K. Celler;Sorin Cristoloveanu.
Journal of Applied Physics (2003)

1126 Citations

Frontiers of silicon-on-insulator

G. K. Celler;Sorin Cristoloveanu.
Journal of Applied Physics (2003)

1126 Citations

Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance

F. Balestra;S. Cristoloveanu;M. Benachir;J. Brini.
IEEE Electron Device Letters (1987)

892 Citations

Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance

F. Balestra;S. Cristoloveanu;M. Benachir;J. Brini.
IEEE Electron Device Letters (1987)

892 Citations

Electrical Characterization of Silicon-on-Insulator Materials and Devices

Sorin Cristoloveanu;Sheng S. Li.
(1995)

750 Citations

Electrical Characterization of Silicon-on-Insulator Materials and Devices

Sorin Cristoloveanu;Sheng S. Li.
(1995)

750 Citations

Ultimately thin double-gate SOI MOSFETs

T. Ernst;S. Cristoloveanu;G. Ghibaudo;T. Ouisse.
IEEE Transactions on Electron Devices (2003)

292 Citations

Ultimately thin double-gate SOI MOSFETs

T. Ernst;S. Cristoloveanu;G. Ghibaudo;T. Ouisse.
IEEE Transactions on Electron Devices (2003)

292 Citations

A review of the pseudo-MOS transistor in SOI wafers: operation, parameter extraction, and applications

S. Cristoloveanu;D. Munteanu;M.S.T. Liu.
IEEE Transactions on Electron Devices (2000)

252 Citations

A review of the pseudo-MOS transistor in SOI wafers: operation, parameter extraction, and applications

S. Cristoloveanu;D. Munteanu;M.S.T. Liu.
IEEE Transactions on Electron Devices (2000)

252 Citations

Editorial Boards

Solid-State Electronics
(Impact Factor: 1.916)

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