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Sorin Cristoloveanu
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Electronics and Electrical Engineering
France
2023

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 64 1290 1231 11 11 869 16616

Sorin Cristoloveanu publications per year

The chart shows the history of publications by Sorin Cristoloveanu between 1977 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Sorin Cristoloveanu published across 49 years, from 1977 to 2025, averaging 18.5 papers a year. Output peaked at 58 publications in 2013. 17 of the 908 publications appeared in the last two years.

No. of publications
10 20 30 40 50
Bar chart. Horizontal axis: year, 1977 to 2025. Vertical axis: number of publications, 0 to 58. Peak 58 publications in 2013. 1977: 3 publications 1978: 4 publications 1979: 0 publications 1980: 3 publications 1981: 3 publications 1982: 4 publications 1983: 6 publications 1984: 5 publications 1985: 5 publications 1986: 7 publications 1987: 10 publications 1988: 13 publications 1989: 13 publications 1990: 12 publications 1991: 21 publications 1992: 12 publications 1993: 18 publications 1994: 9 publications 1995: 19 publications 1996: 13 publications 1997: 9 publications 1998: 11 publications 1999: 12 publications 2000: 11 publications 2001: 18 publications 2002: 14 publications 2003: 17 publications 2004: 29 publications 2005: 26 publications 2006: 32 publications 2007: 38 publications 2008: 26 publications 2009: 37 publications 2010: 35 publications 2011: 44 publications 2012: 31 publications 2013: 58 publications 2014: 33 publications 2015: 42 publications 2016: 33 publications 2017: 40 publications 2018: 31 publications 2019: 30 publications 2020: 18 publications 2021: 27 publications 2022: 5 publications 2023: 4 publications 2024: 11 publications 2025: 6 publications
1977 2025

908 publications in total across all disciplines

View publications per year as a table
Sorin Cristoloveanu: publications per year, 1977 to 2025
Year Publications
1977 3
1978 4
1979 0
1980 3
1981 3
1982 4
1983 6
1984 5
1985 5
1986 7
1987 10
1988 13
1989 13
1990 12
1991 21
1992 12
1993 18
1994 9
1995 19
1996 13
1997 9
1998 11
1999 12
2000 11
2001 18
2002 14
2003 17
2004 29
2005 26
2006 32
2007 38
2008 26
2009 37
2010 35
2011 44
2012 31
2013 58
2014 33
2015 42
2016 33
2017 40
2018 31
2019 30
2020 18
2021 27
2022 5
2023 4
2024 11
2025 6
Total 908
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Sorin Cristoloveanu publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Sorin Cristoloveanu sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 854–873 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 869 publications — 97th percentile

97% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20 869
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
Download as CSV

Sorin Cristoloveanu D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Sorin Cristoloveanu sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 64 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 64 D-Index — 82nd percentile

82% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77 64
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Research.com Recognitions

  • 2023 - Research.com Electronics and Electrical Engineering in France Leader Award
  • 2022 - Research.com Electronics and Electrical Engineering in France Leader Award
  • 2001 - IEEE Fellow For contributions to Silicon-on-Insulator device physics, technology, and characterization.

Overview

Sorin Cristoloveanu is affiliated with the Grenoble Institute of Technology in France. Their primary field of study is Engineering, with a focus on Electrical and Electronic Engineering.

Their research topics include:

  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and devices
  • Integrated Circuits and Semiconductor Failure Analysis
  • Silicon Carbide Semiconductor Technologies
  • Ferroelectric and Negative Capacitance Devices
  • GaN-based semiconductor devices and materials
  • Advanced Memory and Neural Computing

Frequent coauthors of Sorin Cristoloveanu include:

  • Jing Wan
  • Fanyu Liu
  • G. Ghibaudo
  • Bo Li
  • Binhong Li

Common venues for their publications are:

  • Solid-State Electronics
  • IEEE Transactions on Electron Devices
  • physica status solidi (a)
  • IEEE Electron Device Letters
  • Micromachines

Notable recent papers published by Cristoloveanu include:

  • A Review on the Recent Progress of Silicon-on-Insulator-Based Photodetectors, 2021, physica status solidi (a)
  • Effects of Interface Traps and Self-Heating on the Performance of GAA GaN Vertical Nanowire MOSFET, 2020, IEEE Transactions on Electron Devices
  • Effect of Gate Structure on the Trapping Behavior of GaN Junctionless FinFETs, 2020, IEEE Electron Device Letters
  • A Review on the Recent Progress of Silicon-on-Insulator-Based Photodetectors, 2021, physica status solidi (a)
  • Intrinsic Mechanism of Mobility Collapse in Short MOSFETs, 2021, IEEE Transactions on Electron Devices

They have contributed extensively to semiconductor device physics, technology, and characterization, particularly in the area of Silicon-on-Insulator devices.

Sorin Cristoloveanu was recognized as an IEEE Fellow in 2001 for contributions to Silicon-on-Insulator device physics, technology, and characterization.

Best Publications

  • Frontiers of silicon-on-insulator

    G. K. Celler;Sorin Cristoloveanu

  • Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance

    F. Balestra;S. Cristoloveanu;M. Benachir;J. Brini

  • Electrical Characterization of Silicon-on-Insulator Materials and Devices

    Sorin Cristoloveanu;Sheng S. Li

  • Ultimately thin double-gate SOI MOSFETs

    T. Ernst;S. Cristoloveanu;G. Ghibaudo;T. Ouisse

  • A review of the pseudo-MOS transistor in SOI wafers: operation, parameter extraction, and applications

    S. Cristoloveanu;D. Munteanu;M.S.T. Liu

  • A Capacitorless 1T-DRAM on SOI Based on Dynamic Coupling and Double-Gate Operation

    M. Bawedin;S. Cristoloveanu;D. Flandre

  • Silicon on insulator technologies and devices: from present to future

    Sorin Cristoloveanu

  • Lateral interband tunneling transistor in silicon-on-insulator

    C. Aydin;A. Zaslavsky;S. Luryi;S. Cristoloveanu

  • Fringing fields in sub-0.1 μm fully depleted SOI MOSFETs: optimization of the device architecture

    T. Ernst;T. Ernst;C. Tinella;C. Raynaud;S. Cristoloveanu

  • Point-contact pseudo-MOSFET for in-situ characterization of as-grown silicon-on-insulator wafers

    S. Cristoloveanu;S. Williams

  • Ultra-thin fully-depleted SOI MOSFETs: Special charge properties and coupling effects

    S. Eminente;S. Cristoloveanu;R. Clerc;A. Ohata

  • A Review of Sharp-Switching Devices for Ultra-Low Power Applications

    Sorin Cristoloveanu;Jing Wan;Alexander Zaslavsky

  • Tunneling FETs on SOI: Suppression of ambipolar leakage, low-frequency noise behavior, and modeling

    J. Wan;C. Le Royer;A. Zaslavsky;S. Cristoloveanu

  • A Compact Capacitor-Less High-Speed DRAM Using Field Effect-Controlled Charge Regeneration

    J. Wan;C. Le Royer;A. Zaslavsky;S. Cristoloveanu

  • 75 nm damascene metal gate and high-k integration for advanced CMOS devices

    B. Guillaumot;X. Garros;F. Lime;K. Oshima

  • High-Performance GaN-Based Nanochannel FinFETs With/Without AlGaN/GaN Heterostructure

    Ki-Sik Im;Chul-Ho Won;Young-Woo Jo;Jae-Hoon Lee

  • Adaptation of the charge pumping technique to gated p-i-n diodes fabricated on silicon on insulator

    T. Ouisse;S. Cristoloveanu;T. Elewa;H. Haddara

  • Total Ionizing Dose Effects on Triple-Gate FETs

    M. Gaillardin;P. Paillet;V. Ferlet-Cavrois;O. Faynot

  • Coupling effects and channels separation in FinFETs

    F. Daugé;J. Pretet;J. Pretet;S. Cristoloveanu;A. Vandooren

  • A simple parameter extraction method for ultra-thin oxide MOSFETs

    P.K McLarty;S Cristoloveanu;O Faynot;V Misra

  • Silicon-on-nothing MOSFETs: performance, short-channel effects, and backgate coupling

    J. Pretet;S. Monfray;S. Cristoloveanu;T. Skotnicki

Frequent Co-Authors

Francisco Gamiz
Francisco Gamiz University of Granada
Gerard Ghibaudo
Gerard Ghibaudo Grenoble Alpes University
Francois Andrieu
Francois Andrieu CEA LETI
Denis Flandre
Denis Flandre Université Catholique de Louvain
O. Faynot
O. Faynot CEA LETI
Daniela Munteanu
Daniela Munteanu Aix-Marseille University
Jean-Pierre Colinge
Jean-Pierre Colinge University of California, Davis
Thomas Skotnicki
Thomas Skotnicki Warsaw University of Technology
Lorenzo Faraone
Lorenzo Faraone University of Western Australia
Benjamin J. Blalock
Benjamin J. Blalock University of Tennessee at Knoxville

External Links

Personal website of Sorin Cristoloveanu Google Scholar page

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Publications: 119

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Publications: 100

Cor Claeys

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Publications: 97

Francisco Gamiz

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Publications: 94

Denis Flandre

Denis Flandre

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Publications: 86

Jean-Pierre Colinge

Jean-Pierre Colinge

University of California, Davis

Publications: 68

Ronald D. Schrimpf

Ronald D. Schrimpf

Vanderbilt University

Publications: 53

Francois Andrieu

Francois Andrieu

CEA LETI

Publications: 52

Daniel M. Fleetwood

Daniel M. Fleetwood

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Publications: 51

Jean-Pierre Raskin

Jean-Pierre Raskin

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Publications: 44

Nadine Collaert

Nadine Collaert

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Publications: 38

Adrian M. Ionescu

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Abhinav Kranti

Abhinav Kranti

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