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Electronics and Electrical Engineering
France
2023

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
64
Citations
16616
World Ranking
1290
National Ranking
11

Research.com Recognitions

  • 2023 - Research.com Electronics and Electrical Engineering in France Leader Award
  • 2022 - Research.com Electronics and Electrical Engineering in France Leader Award
  • 2001 - IEEE Fellow For contributions to Silicon-on-Insulator device physics, technology, and characterization.

Overview

Sorin Cristoloveanu is affiliated with the Grenoble Institute of Technology in France. Their primary field of study is Engineering, with a focus on Electrical and Electronic Engineering.

Their research topics include:

  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and devices
  • Integrated Circuits and Semiconductor Failure Analysis
  • Silicon Carbide Semiconductor Technologies
  • Ferroelectric and Negative Capacitance Devices
  • GaN-based semiconductor devices and materials
  • Advanced Memory and Neural Computing

Frequent coauthors of Sorin Cristoloveanu include:

  • Jing Wan
  • Fanyu Liu
  • G. Ghibaudo
  • Bo Li
  • Binhong Li

Common venues for their publications are:

  • Solid-State Electronics
  • IEEE Transactions on Electron Devices
  • physica status solidi (a)
  • IEEE Electron Device Letters
  • Micromachines

Notable recent papers published by Cristoloveanu include:

  • A Review on the Recent Progress of Silicon-on-Insulator-Based Photodetectors, 2021, physica status solidi (a)
  • Effects of Interface Traps and Self-Heating on the Performance of GAA GaN Vertical Nanowire MOSFET, 2020, IEEE Transactions on Electron Devices
  • Effect of Gate Structure on the Trapping Behavior of GaN Junctionless FinFETs, 2020, IEEE Electron Device Letters
  • A Review on the Recent Progress of Silicon-on-Insulator-Based Photodetectors, 2021, physica status solidi (a)
  • Intrinsic Mechanism of Mobility Collapse in Short MOSFETs, 2021, IEEE Transactions on Electron Devices

They have contributed extensively to semiconductor device physics, technology, and characterization, particularly in the area of Silicon-on-Insulator devices.

Sorin Cristoloveanu was recognized as an IEEE Fellow in 2001 for contributions to Silicon-on-Insulator device physics, technology, and characterization.

Best Publications

  • Frontiers of silicon-on-insulator

    G. K. Celler;Sorin Cristoloveanu

  • Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance

    F. Balestra;S. Cristoloveanu;M. Benachir;J. Brini

  • Electrical Characterization of Silicon-on-Insulator Materials and Devices

    Sorin Cristoloveanu;Sheng S. Li

  • Ultimately thin double-gate SOI MOSFETs

    T. Ernst;S. Cristoloveanu;G. Ghibaudo;T. Ouisse

  • A review of the pseudo-MOS transistor in SOI wafers: operation, parameter extraction, and applications

    S. Cristoloveanu;D. Munteanu;M.S.T. Liu

  • A Capacitorless 1T-DRAM on SOI Based on Dynamic Coupling and Double-Gate Operation

    M. Bawedin;S. Cristoloveanu;D. Flandre

  • Silicon on insulator technologies and devices: from present to future

    Sorin Cristoloveanu

  • Lateral interband tunneling transistor in silicon-on-insulator

    C. Aydin;A. Zaslavsky;S. Luryi;S. Cristoloveanu

  • Fringing fields in sub-0.1 μm fully depleted SOI MOSFETs: optimization of the device architecture

    T. Ernst;T. Ernst;C. Tinella;C. Raynaud;S. Cristoloveanu

  • Point-contact pseudo-MOSFET for in-situ characterization of as-grown silicon-on-insulator wafers

    S. Cristoloveanu;S. Williams

  • Ultra-thin fully-depleted SOI MOSFETs: Special charge properties and coupling effects

    S. Eminente;S. Cristoloveanu;R. Clerc;A. Ohata

  • A Review of Sharp-Switching Devices for Ultra-Low Power Applications

    Sorin Cristoloveanu;Jing Wan;Alexander Zaslavsky

  • Tunneling FETs on SOI: Suppression of ambipolar leakage, low-frequency noise behavior, and modeling

    J. Wan;C. Le Royer;A. Zaslavsky;S. Cristoloveanu

  • A Compact Capacitor-Less High-Speed DRAM Using Field Effect-Controlled Charge Regeneration

    J. Wan;C. Le Royer;A. Zaslavsky;S. Cristoloveanu

  • 75 nm damascene metal gate and high-k integration for advanced CMOS devices

    B. Guillaumot;X. Garros;F. Lime;K. Oshima

  • High-Performance GaN-Based Nanochannel FinFETs With/Without AlGaN/GaN Heterostructure

    Ki-Sik Im;Chul-Ho Won;Young-Woo Jo;Jae-Hoon Lee

  • Adaptation of the charge pumping technique to gated p-i-n diodes fabricated on silicon on insulator

    T. Ouisse;S. Cristoloveanu;T. Elewa;H. Haddara

  • Total Ionizing Dose Effects on Triple-Gate FETs

    M. Gaillardin;P. Paillet;V. Ferlet-Cavrois;O. Faynot

  • Coupling effects and channels separation in FinFETs

    F. Daugé;J. Pretet;J. Pretet;S. Cristoloveanu;A. Vandooren

  • A simple parameter extraction method for ultra-thin oxide MOSFETs

    P.K McLarty;S Cristoloveanu;O Faynot;V Misra

  • Silicon-on-nothing MOSFETs: performance, short-channel effects, and backgate coupling

    J. Pretet;S. Monfray;S. Cristoloveanu;T. Skotnicki

Frequent Co-Authors

Gerard Ghibaudo
Gerard Ghibaudo Grenoble Alpes University
Denis Flandre
Denis Flandre Université Catholique de Louvain
O. Faynot
O. Faynot CEA LETI
Daniela Munteanu
Daniela Munteanu Aix-Marseille University
Jean-Pierre Colinge
Jean-Pierre Colinge University of California, Davis
Thomas Skotnicki
Thomas Skotnicki Warsaw University of Technology
Benjamin J. Blalock
Benjamin J. Blalock University of Tennessee at Knoxville
Lorenzo Faraone
Lorenzo Faraone University of Western Australia
Ronald D. Schrimpf
Ronald D. Schrimpf Vanderbilt University

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