2022 - Research.com Electronics and Electrical Engineering in France Leader Award
2001 - IEEE Fellow For contributions to Silicon-on-Insulator device physics, technology, and characterization.
His primary areas of investigation include Optoelectronics, Silicon on insulator, MOSFET, Electrical engineering and Transistor. His Optoelectronics study incorporates themes from Field-effect transistor, Voltage, Transconductance and Threshold voltage. His study with Silicon on insulator involves better knowledge in Silicon.
Sorin Cristoloveanu interconnects Nanotechnology, Electronic engineering, CMOS, Biasing and Gate oxide in the investigation of issues within MOSFET. His Electrical engineering research is multidisciplinary, incorporating perspectives in Dram, Condensed matter physics and Pulse. His Transistor research is multidisciplinary, incorporating elements of Buried oxide, Absorbed dose, Doping, Logic gate and Wide-bandgap semiconductor.
Sorin Cristoloveanu mainly investigates Optoelectronics, Silicon on insulator, MOSFET, Transistor and Electrical engineering. His study in Optoelectronics is interdisciplinary in nature, drawing from both Threshold voltage, Voltage, Transconductance and Field-effect transistor. As a part of the same scientific family, Sorin Cristoloveanu mostly works in the field of Silicon on insulator, focusing on Wafer and, on occasion, Characterization.
His biological study spans a wide range of topics, including Metal gate, Gate oxide, Coupling, Condensed matter physics and Biasing. As part of one scientific family, he deals mainly with the area of Transistor, narrowing it down to issues related to the Dram, and often Capacitor. Sorin Cristoloveanu does research in Electrical engineering, focusing on Breakdown voltage specifically.
His primary scientific interests are in Optoelectronics, Silicon on insulator, MOSFET, Transistor and Electrical engineering. His research in Optoelectronics intersects with topics in Threshold voltage and Voltage. His Silicon on insulator research incorporates themes from Wafer, Characterization, Electronic engineering, Logic gate and Biasing.
His Electronic engineering study combines topics from a wide range of disciplines, such as Coupling and Capacitor. His work focuses on many connections between MOSFET and other disciplines, such as Substrate, that overlap with his field of interest in Responsivity. The Transconductance and Field-effect transistor research he does as part of his general Transistor study is frequently linked to other disciplines of science, such as Planar, therefore creating a link between diverse domains of science.
The scientist’s investigation covers issues in Optoelectronics, Silicon on insulator, MOSFET, Electrical engineering and Transistor. His Optoelectronics research is multidisciplinary, relying on both Threshold voltage, Transconductance, Nanotechnology and Field-effect transistor. His studies deal with areas such as Dram, Photodetector, Subthreshold slope, Logic gate and Electrostatic discharge as well as Silicon on insulator.
His MOSFET research incorporates elements of Wafer, Electron mobility, High voltage, Biasing and Electronic engineering. His work is dedicated to discovering how Electrical engineering, Silicon are connected with Stress and Epitaxy and other disciplines. His work on Heterostructure-emitter bipolar transistor as part of general Transistor research is often related to Planar, thus linking different fields of science.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Frontiers of silicon-on-insulator
G. K. Celler;Sorin Cristoloveanu.
Journal of Applied Physics (2003)
Frontiers of silicon-on-insulator
G. K. Celler;Sorin Cristoloveanu.
Journal of Applied Physics (2003)
Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance
F. Balestra;S. Cristoloveanu;M. Benachir;J. Brini.
IEEE Electron Device Letters (1987)
Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance
F. Balestra;S. Cristoloveanu;M. Benachir;J. Brini.
IEEE Electron Device Letters (1987)
Electrical Characterization of Silicon-on-Insulator Materials and Devices
Sorin Cristoloveanu;Sheng S. Li.
(1995)
Electrical Characterization of Silicon-on-Insulator Materials and Devices
Sorin Cristoloveanu;Sheng S. Li.
(1995)
Ultimately thin double-gate SOI MOSFETs
T. Ernst;S. Cristoloveanu;G. Ghibaudo;T. Ouisse.
IEEE Transactions on Electron Devices (2003)
Ultimately thin double-gate SOI MOSFETs
T. Ernst;S. Cristoloveanu;G. Ghibaudo;T. Ouisse.
IEEE Transactions on Electron Devices (2003)
A review of the pseudo-MOS transistor in SOI wafers: operation, parameter extraction, and applications
S. Cristoloveanu;D. Munteanu;M.S.T. Liu.
IEEE Transactions on Electron Devices (2000)
A review of the pseudo-MOS transistor in SOI wafers: operation, parameter extraction, and applications
S. Cristoloveanu;D. Munteanu;M.S.T. Liu.
IEEE Transactions on Electron Devices (2000)
Solid-State Electronics
(Impact Factor: 1.916)
If you think any of the details on this page are incorrect, let us know.
We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:
University of Granada
Grenoble Alpes University
CEA LETI
Université Catholique de Louvain
CEA LETI
CEA LETI
Warsaw University of Technology
University of Tennessee at Knoxville
Vanderbilt University
University of California, San Diego
Tufts University
Arizona State University
University of Colorado Boulder
University of Delaware
University of Pennsylvania
Ross University School of Veterinary Medicine
Michigan State University
Wageningen University & Research
National Cheng Kung University
University of London
University of Pretoria
University of Tasmania
University of Oviedo
Sewanee: The University of the South
University of Miami
Middlesex University