D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 33 Citations 4,117 287 World Ranking 4238 National Ranking 7

Research.com Recognitions

Awards & Achievements

2010 - IEEE Fellow For contributions to development of metal-oxide semiconductor field effect transistor models and advanced semiconductor technologies

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Semiconductor
  • Electrical engineering

His primary areas of investigation include Electrical engineering, Optoelectronics, MOSFET, CMOS and Silicon on insulator. The concepts of his Electrical engineering study are interwoven with issues in Doping and Low-power electronics. His research integrates issues of NMOS logic, Threshold voltage, Transistor, Substrate and Gate oxide in his study of Optoelectronics.

His MOSFET study integrates concerns from other disciplines, such as Computer simulation, Electron mobility, Silicon and Capacitor. His CMOS study combines topics from a wide range of disciplines, such as PMOS logic and Node. His Silicon on insulator study often links to related topics such as Electronic engineering.

His most cited work include:

  • Poly-gate replacement through contact hole (PRETCH): a new method for high-k/metal gate and multi-oxide implementation on chip (123 citations)
  • A one transistor cell on bulk substrate (1T-Bulk) for low-cost and high density eDRAM (115 citations)
  • Dielectric pockets-a new concept of the junctions for deca-nanometric CMOS devices (87 citations)

What are the main themes of his work throughout his whole career to date?

Thomas Skotnicki focuses on Optoelectronics, Electrical engineering, MOSFET, Transistor and Silicon. His studies in Optoelectronics integrate themes in fields like Substrate, Gate oxide and Electronic engineering. His MOSFET research focuses on Electron mobility and how it relates to Engineering physics.

His Transistor study combines topics in areas such as Layer, Equivalent series resistance, Dielectric and Integrated circuit. His Silicon research incorporates elements of Wafer, Nanotechnology, Thermal conductivity, Epitaxy and Condensed matter physics. His research in CMOS intersects with topics in Lithography, Capacitance, Leakage, Node and Static random-access memory.

He most often published in these fields:

  • Optoelectronics (56.94%)
  • Electrical engineering (36.13%)
  • MOSFET (28.61%)

What were the highlights of his more recent work (between 2012-2020)?

  • Optoelectronics (56.94%)
  • Thermal energy (6.36%)
  • Electrical engineering (36.13%)

In recent papers he was focusing on the following fields of study:

His main research concerns Optoelectronics, Thermal energy, Electrical engineering, Mechanical engineering and Heat engine. His Optoelectronics research is multidisciplinary, incorporating elements of Nanotechnology and Thermoelectric effect. Thomas Skotnicki has researched Electrical engineering in several fields, including Buried oxide, Silicon on insulator and Electret.

His Nanowire research includes elements of Nano-, Epitaxy and MOSFET. His Lithography research is multidisciplinary, relying on both Etching, Transistor, CMOS and Resist. His work on Electronic engineering expands to the thematically related Silicon.

Between 2012 and 2020, his most popular works were:

  • Semi-flexible bimetal-based thermal energy harvesters (43 citations)
  • FDSOI CMOS devices featuring dual strained channel and thin BOX extendable to the 10nm node (23 citations)
  • Piezoelectric and electrostatic bimetal-based thermal energy harvesters (16 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Semiconductor
  • Electrical engineering

Thomas Skotnicki spends much of his time researching Optoelectronics, Thermoelectric effect, Electrical engineering, Thermal conductivity and Silicon. In his research, he performs multidisciplinary study on Optoelectronics and Communication channel. His studies deal with areas such as Buried oxide, Silicon on insulator and Electret as well as Electrical engineering.

His Silicon on insulator research integrates issues from High-κ dielectric, Metal gate, Biasing and Threshold voltage. The various areas that Thomas Skotnicki examines in his Thermal conductivity study include Semiconductor and Order of magnitude. His Silicon research includes themes of Thermal and Work.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Poly-gate replacement through contact hole (PRETCH): a new method for high-k/metal gate and multi-oxide implementation on chip

S. Harrison;P. Coronel;A. Cros;R. Cerutti.
international electron devices meeting (2004)

132 Citations

THE ROAD TO THE END OF CMOS SCALING

Thomas Skotnicki;James A. Hutchby;Frederic Boeuf;T. J. Watson.
(2004)

129 Citations

A one transistor cell on bulk substrate (1T-Bulk) for low-cost and high density eDRAM

R. Ranica;A. Villaret;P. Malinge;P. Mazoyer.
symposium on vlsi technology (2004)

118 Citations

Totally silicided (CoSi/sub 2/) polysilicon: a novel approach to very low-resistive gate (/spl sim/2/spl Omega///spl square/) without metal CMP nor etching

B. Tavel;T. Skotnicki;G. Pares;N. Carriere.
international electron devices meeting (2001)

116 Citations

Dielectric pockets-a new concept of the junctions for deca-nanometric CMOS devices

M. Jurczak;T. Skotnicki;R. Gwoziecki;M. Paoli.
IEEE Transactions on Electron Devices (2001)

108 Citations

Quantum Short-channel Compact Modelling of Drain-Current in Double-Gate MOSFET

Daniela Munteanu;Jean-Luc Autran;Xavier Loussier;Samuel Harrison.
Solid-state Electronics (2006)

106 Citations

Low leakage and low variability Ultra-Thin Body and Buried Oxide (UT2B) SOI technology for 20nm low power CMOS and beyond

F. Andrieu;O. Weber;J. Mazurier;O. Thomas.
symposium on vlsi technology (2010)

104 Citations

Silicon-on-nothing MOSFETs: performance, short-channel effects, and backgate coupling

J. Pretet;S. Monfray;S. Cristoloveanu;T. Skotnicki.
IEEE Transactions on Electron Devices (2004)

102 Citations

Requirements for ultra-thin-film devices and new materials for the CMOS roadmap

C. Fenouillet-Beranger;T. Skotnicki;S. Monfray;N. Carriere.
Solid-state Electronics (2004)

100 Citations

Further insight into the physics and modeling of floating-body capacitorless DRAMs

A. Villaret;R. Ranica;P. Malinge;P. Masson.
IEEE Transactions on Electron Devices (2005)

99 Citations

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