World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
48
Citations
8022
World Ranking
3110
National Ranking
6

Research.com Recognitions

  • 2010 - IEEE Fellow For contributions to development of metal-oxide semiconductor field effect transistor models and advanced semiconductor technologies

Overview

Thomas Skotnicki is affiliated with the Warsaw University of Technology in Poland and has an extensive body of work concentrating on engineering and materials science. Their research spans specific subfields including electrical and electronic engineering, materials chemistry, mechanical engineering, biomedical engineering, and spectroscopy.

The main areas of focus in Skotnicki's research include innovative energy harvesting technologies, advanced thermoelectric materials and devices, energy harvesting in wireless networks, advanced sensor and energy harvesting materials, graphene research and applications, thermal properties of materials, and plasmonic and surface plasmon research.

They have contributed to several scholarly articles, with recent papers including:

  • "Software Controlled Low Cost Thermoelectric Energy Harvester for Ultra-Low Power Wireless Sensor Nodes" (2020, IEEE Access)
  • "Randomly moving thermoelectric energy harvester for wearables and industrial Internet of Things" (2024, Nano Energy)
  • "Piezoelectric Response and Substrate Effect of ZnO Nanowires for Mechanical Energy Harvesting in Internet-of-Things Applications" (2022, Materials)
  • "Piezoelectric Response and Substrate Effect of ZnO Nanowires for Mechanical Energy Harvesting in Internet of Things Applications" (2022, Preprints.org)
  • "Self-damping of the relaxation oscillations in miniature pulsed transmitter for sub-nanosecond-precision, long-distance LIDAR" (2020, Results in Physics)

Their frequent coauthors include Maciej Haras, W. Knap, Emmanuel Dubois, J.F. Robillard, and Naveed Ahmed. Skotnicki's work has been published multiple times in venues such as Applied Sciences, Nanoscale, Nano Energy, IEEE Access, and Materials.

Within their academic contributions, Skotnicki has actively worked across various topics including:

  • Innovative Energy Harvesting Technologies
  • Advanced Thermoelectric Materials and Devices
  • Energy Harvesting in Wireless Networks
  • Advanced Sensor and Energy Harvesting Materials
  • Graphene research and applications
  • Thermal properties of materials
  • Plasmonic and Surface Plasmon Research

In recognition of contributions to semiconductor technologies, Skotnicki was named IEEE Fellow in 2010 for their work related to the development of metal-oxide semiconductor field effect transistor models and advanced semiconductor technologies.

Best Publications

  • Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power

    R. Tauk;F. Teppe;S. Boubanga;D. Coquillat

  • Broadband terahertz imaging with highly sensitive silicon CMOS detectors

    Franz Schuster;Dominique Coquillat;Hadley Videlier;Maciej Sakowicz

  • Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors

    W. Knap;F. Teppe;Y. Meziani;N. Dyakonova

  • Silicon-on-Nothing (SON)-an innovative process for advanced CMOS

    Unknown

  • Novel integration process and performances analysis of Low STandby Power (LSTP) 3D multi-channel CMOSFET (MCFET) on SOI with metal / high-K gate stack

    E. Bernard;T. Ernst;B. Guillaumot;N. Vulliet

  • Unexpected mobility degradation for very short devices : A new challenge for CMOS scaling

    Antoine Cros;Krunoslav Romanjek;Dominique Fleury;Samuel Harrison

  • Poly-gate replacement through contact hole (PRETCH): a new method for high-k/metal gate and multi-oxide implementation on chip

    S. Harrison;P. Coronel;A. Cros;R. Cerutti

  • A one transistor cell on bulk substrate (1T-Bulk) for low-cost and high density eDRAM

    R. Ranica;A. Villaret;P. Malinge;P. Mazoyer

  • Dielectric pockets-a new concept of the junctions for deca-nanometric CMOS devices

    M. Jurczak;T. Skotnicki;R. Gwoziecki;M. Paoli

  • Totally silicided (CoSi/sub 2/) polysilicon: a novel approach to very low-resistive gate (/spl sim/2/spl Omega///spl square/) without metal CMP nor etching

    B. Tavel;T. Skotnicki;G. Pares;N. Carriere

  • Low leakage and low variability Ultra-Thin Body and Buried Oxide (UT2B) SOI technology for 20nm low power CMOS and beyond

    F. Andrieu;O. Weber;J. Mazurier;O. Thomas

  • Silicon-on-nothing MOSFETs: performance, short-channel effects, and backgate coupling

    J. Pretet;S. Monfray;S. Cristoloveanu;T. Skotnicki

  • Requirements for ultra-thin-film devices and new materials for the CMOS roadmap

    C. Fenouillet-Beranger;T. Skotnicki;S. Monfray;N. Carriere

  • 50 nm-Gate All Around (GAA)-Silicon On Nothing (SON)-devices: a simple way to co-integration of GAA transistors within bulk MOSFET process

    S. Monfray;T. Skotnicki;Y. Morand;S. Descombes

  • Further insight into the physics and modeling of floating-body capacitorless DRAMs

    A. Villaret;R. Ranica;P. Malinge;P. Masson

  • Ultra-thin-body and BOX (UTBB) fully depleted (FD) device integration for 22nm node and beyond

    Q. Liu;A. Yagishita;N. Loubet;A. Khakifirooz

  • Search for the optimal channel architecture for 0.18/0.12 /spl mu/m bulk CMOS experimental study

    P. Bouillon;T. Skotnicki;C. Kelaidis;R. Gwoziecki

  • Magnetoresistance characterization of nanometer Si metal-oxide-semiconductor transistors

    Y. M. Meziani;J. Łusakowski;W. Knap;N. Dyakonova

  • First 80 nm SON (Silicon-On-Nothing) MOSFETs with perfect morphology and high electrical performance

    S. Monfray;T. Skotnicki;Y. Morand;S. Descombes

  • Mechanisms of charge modulation in the floating body of triple-well nMOSFET capacitor-less DRAMs

    A. Villaret;R. Ranica;P. Masson;P. Malinge

  • Surround-gate semiconductor device encapsulated in an insulating medium

    Philippe Coronel;Stephane Monfray;Thomas Skotnicki

Frequent Co-Authors

Gerard Ghibaudo
Gerard Ghibaudo Grenoble Alpes University
O. Faynot
O. Faynot CEA LETI
Sorin Cristoloveanu
Sorin Cristoloveanu Grenoble Institute of Technology
Daniel Guyomar
Daniel Guyomar Institut National des Sciences Appliquées de Lyon
Adrian M. Ionescu
Adrian M. Ionescu École Polytechnique Fédérale de Lausanne
Daniela Munteanu
Daniela Munteanu Aix-Marseille University
Bruce B. Doris
Bruce B. Doris IBM (United States)
Yoshio Nishi
Yoshio Nishi Stanford University

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