World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
48
Citations
8022
World Ranking
3110
National Ranking
6

Thomas Skotnicki publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Thomas Skotnicki sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 419 publications — 77th percentile

77% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Thomas Skotnicki D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Thomas Skotnicki sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 48 D-Index — 56th percentile

56% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2010 - IEEE Fellow For contributions to development of metal-oxide semiconductor field effect transistor models and advanced semiconductor technologies

Overview

Thomas Skotnicki is affiliated with the Warsaw University of Technology in Poland and has an extensive body of work concentrating on engineering and materials science. Their research spans specific subfields including electrical and electronic engineering, materials chemistry, mechanical engineering, biomedical engineering, and spectroscopy.

The main areas of focus in Skotnicki's research include innovative energy harvesting technologies, advanced thermoelectric materials and devices, energy harvesting in wireless networks, advanced sensor and energy harvesting materials, graphene research and applications, thermal properties of materials, and plasmonic and surface plasmon research.

They have contributed to several scholarly articles, with recent papers including:

  • "Software Controlled Low Cost Thermoelectric Energy Harvester for Ultra-Low Power Wireless Sensor Nodes" (2020, IEEE Access)
  • "Randomly moving thermoelectric energy harvester for wearables and industrial Internet of Things" (2024, Nano Energy)
  • "Piezoelectric Response and Substrate Effect of ZnO Nanowires for Mechanical Energy Harvesting in Internet-of-Things Applications" (2022, Materials)
  • "Piezoelectric Response and Substrate Effect of ZnO Nanowires for Mechanical Energy Harvesting in Internet of Things Applications" (2022, Preprints.org)
  • "Self-damping of the relaxation oscillations in miniature pulsed transmitter for sub-nanosecond-precision, long-distance LIDAR" (2020, Results in Physics)

Their frequent coauthors include Maciej Haras, W. Knap, Emmanuel Dubois, J.F. Robillard, and Naveed Ahmed. Skotnicki's work has been published multiple times in venues such as Applied Sciences, Nanoscale, Nano Energy, IEEE Access, and Materials.

Within their academic contributions, Skotnicki has actively worked across various topics including:

  • Innovative Energy Harvesting Technologies
  • Advanced Thermoelectric Materials and Devices
  • Energy Harvesting in Wireless Networks
  • Advanced Sensor and Energy Harvesting Materials
  • Graphene research and applications
  • Thermal properties of materials
  • Plasmonic and Surface Plasmon Research

In recognition of contributions to semiconductor technologies, Skotnicki was named IEEE Fellow in 2010 for their work related to the development of metal-oxide semiconductor field effect transistor models and advanced semiconductor technologies.

Best Publications

  • Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power

    R. Tauk;F. Teppe;S. Boubanga;D. Coquillat

  • Broadband terahertz imaging with highly sensitive silicon CMOS detectors

    Franz Schuster;Dominique Coquillat;Hadley Videlier;Maciej Sakowicz

  • Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors

    W. Knap;F. Teppe;Y. Meziani;N. Dyakonova

  • Silicon-on-Nothing (SON)-an innovative process for advanced CMOS

    Unknown

  • Novel integration process and performances analysis of Low STandby Power (LSTP) 3D multi-channel CMOSFET (MCFET) on SOI with metal / high-K gate stack

    E. Bernard;T. Ernst;B. Guillaumot;N. Vulliet

  • Unexpected mobility degradation for very short devices : A new challenge for CMOS scaling

    Antoine Cros;Krunoslav Romanjek;Dominique Fleury;Samuel Harrison

  • Poly-gate replacement through contact hole (PRETCH): a new method for high-k/metal gate and multi-oxide implementation on chip

    S. Harrison;P. Coronel;A. Cros;R. Cerutti

  • A one transistor cell on bulk substrate (1T-Bulk) for low-cost and high density eDRAM

    R. Ranica;A. Villaret;P. Malinge;P. Mazoyer

  • Dielectric pockets-a new concept of the junctions for deca-nanometric CMOS devices

    M. Jurczak;T. Skotnicki;R. Gwoziecki;M. Paoli

  • Totally silicided (CoSi/sub 2/) polysilicon: a novel approach to very low-resistive gate (/spl sim/2/spl Omega///spl square/) without metal CMP nor etching

    B. Tavel;T. Skotnicki;G. Pares;N. Carriere

  • Low leakage and low variability Ultra-Thin Body and Buried Oxide (UT2B) SOI technology for 20nm low power CMOS and beyond

    F. Andrieu;O. Weber;J. Mazurier;O. Thomas

  • Silicon-on-nothing MOSFETs: performance, short-channel effects, and backgate coupling

    J. Pretet;S. Monfray;S. Cristoloveanu;T. Skotnicki

  • Requirements for ultra-thin-film devices and new materials for the CMOS roadmap

    C. Fenouillet-Beranger;T. Skotnicki;S. Monfray;N. Carriere

  • 50 nm-Gate All Around (GAA)-Silicon On Nothing (SON)-devices: a simple way to co-integration of GAA transistors within bulk MOSFET process

    S. Monfray;T. Skotnicki;Y. Morand;S. Descombes

  • Further insight into the physics and modeling of floating-body capacitorless DRAMs

    A. Villaret;R. Ranica;P. Malinge;P. Masson

  • Ultra-thin-body and BOX (UTBB) fully depleted (FD) device integration for 22nm node and beyond

    Q. Liu;A. Yagishita;N. Loubet;A. Khakifirooz

  • Search for the optimal channel architecture for 0.18/0.12 /spl mu/m bulk CMOS experimental study

    P. Bouillon;T. Skotnicki;C. Kelaidis;R. Gwoziecki

  • Magnetoresistance characterization of nanometer Si metal-oxide-semiconductor transistors

    Y. M. Meziani;J. Łusakowski;W. Knap;N. Dyakonova

  • First 80 nm SON (Silicon-On-Nothing) MOSFETs with perfect morphology and high electrical performance

    S. Monfray;T. Skotnicki;Y. Morand;S. Descombes

  • Mechanisms of charge modulation in the floating body of triple-well nMOSFET capacitor-less DRAMs

    A. Villaret;R. Ranica;P. Masson;P. Malinge

  • Surround-gate semiconductor device encapsulated in an insulating medium

    Philippe Coronel;Stephane Monfray;Thomas Skotnicki

Frequent Co-Authors

Gerard Ghibaudo
Gerard Ghibaudo Grenoble Alpes University
Sorin Cristoloveanu
Sorin Cristoloveanu Grenoble Institute of Technology
O. Faynot
O. Faynot CEA LETI
Wojciech Knap
Wojciech Knap Warsaw University of Technology
Daniel Guyomar
Daniel Guyomar Institut National des Sciences Appliquées de Lyon
Adrian M. Ionescu
Adrian M. Ionescu École Polytechnique Fédérale de Lausanne
Daniela Munteanu
Daniela Munteanu Aix-Marseille University
Bruce B. Doris
Bruce B. Doris IBM (United States)

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