World's Best Scientists 2026 revealed!
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Electronics and Electrical Engineering
USA
2026
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Materials Science
USA
2022

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
124
Citations
69439
World Ranking
51
National Ranking
28

Materials Science

D-Index
124
Citations
68492
World Ranking
423
National Ranking
156

Physics

D-Index
124
Citations
69129
World Ranking
687
National Ranking
378

Michael Shur publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Michael Shur sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 1,689 publications — 100th percentile

100% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Michael Shur D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Michael Shur sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 124 D-Index — 99th percentile

99% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2026 - Research.com Electronics and Electrical Engineering in United States Leader Award
  • 2025 - Research.com Electronics and Electrical Engineering in United States Leader Award
  • 2022 - Research.com Materials Science in United States Leader Award
  • 2016 - Fellow, National Academy of Inventors
  • 2012 - OSA Fellows For pioneering contributions to terahertz optoelectronics.
  • 2012 - SPIE Fellow
  • 2009 - Fellow of the Materials Research Society
  • 2005 - Fellow of the American Association for the Advancement of Science (AAAS)
  • 1995 - Fellow of American Physical Society (APS) Citation For his contributions to physics of ballistic transport in semiconductors

Overview

Michael Shur is affiliated with Rensselaer Polytechnic Institute in the United States. Their research spans a variety of topics primarily in engineering and physics, with a significant focus on terahertz technology and plasmonics.

Their recent scholarly output includes notable papers such as Plasmonic Field-Effect Transistors (TeraFETs) for 6G Communications (2021, Sensors), Terahertz Plasmonic Technology (2020, IEEE Sensors Journal), Graphene based plasma-wave devices for terahertz applications (2020, Applied Physics Letters), High-brightness lasing at submicrometer enabled by droop-free fin light-emitting diodes (LEDs) (2020, Science Advances), and Collision dominated, ballistic, and viscous regimes of terahertz plasmonic detection by graphene (2021, Journal of Applied Physics).

The main areas of study encompass

  • Engineering
  • Physics and Astronomy

More specifically, the subfields include

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Biomedical Engineering
  • Materials Chemistry
  • Astronomy and Astrophysics

The primary research topics covered in their work are

  • Plasmonic and Surface Plasmon Research
  • Terahertz technology and applications
  • Photonic and Optical Devices
  • Semiconductor Quantum Structures and Devices
  • Superconducting and THz Device Technology
  • Graphene research and applications
  • Topological Materials and Phenomena

Frequent collaborators include Taiichi Otsuji, M. Ryzhii, V. Ryzhii, Vladimir Mitin, and Trond Ytterdal.

The scientist's work has commonly been published in venues such as

  • arXiv (Cornell University)
  • Journal of Applied Physics
  • ECS Meeting Abstracts
  • ECS Transactions
  • Applied Physics Letters

Recognition for their contributions includes fellowships in several professional organizations:

  • Fellow, National Academy of Inventors (2016)
  • OSA Fellows (2012) for pioneering contributions to terahertz optoelectronics
  • SPIE Fellow (2012)
  • Fellow of the Materials Research Society (2009)
  • Fellow of the American Association for the Advancement of Science (AAAS) (2005)
  • Fellow of American Physical Society (APS) (1995) with citation for contributions to physics of ballistic transport in semiconductors

Best Publications

  • Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current.

    Michael Dyakonov;Michael Shur

  • Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid

    M. Dyakonov;M. Shur

  • Properties of advanced semiconductor materials : GaN, AlN, InN, BN, SiC, SiGe

    M. E. Levinshteĭn;S. L. Rumyantsev;Michael Shur

  • Handbook series on semiconductor parameters

    M Levinshtein;S Rumyantsev;M Shur

  • GaAs devices and circuits

    Michael Shur

  • Threshold switching in chalcogenide-glass thin films

    D. Adler;M. S. Shur;M. Silver;S. R. Ovshinsky

  • Introduction to Solid-State Lighting

    Artūras Žukauskas;Michael Shur;Remis Gaska

  • Transient electron transport in wurtzite GaN, InN, and AlN

    Brian E. Foutz;Stephen K. O’Leary;Michael S. Shur;Lester F. Eastman

  • Sensitive Skin

    V.J. Lumelsky;M.S. Shur;S. Wagner

  • Solid-State Lighting: Toward Superior Illumination

    M.S. Shur;R. Zukauskas

  • Physics of amorphous silicon based alloy field‐effect transistors

    M. Shur;M. Hack

  • Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide

    R.F. Davis;G. Kelner;M. Shur;J.W. Palmour

  • An experimental study of contact effects in organic thin film transistors

    D. J. Gundlach;D. J. Gundlach;L. Zhou;J. A. Nichols;T. N. Jackson

  • Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor

    M. Asif Khan;J. N. Kuznia;D. T. Olson;W. J. Schaff

  • AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%

    Max Shatalov;Wenhong Sun;Alex Lunev;Xuhong Hu

  • Nonresonant Detection of Terahertz Radiation in Field Effect Transistors

    W. Knap;V. Kachorovskii;Y. Deng;S. Rumyantsev

  • Plasma wave electronics: novel terahertz devices using two dimensional electron fluid

    M.I. Dyakonov;M.S. Shur

  • Monte Carlo calculation of velocity-field characteristics of wurtzite GaN

    Udayan V. Bhapkar;Michael S. Shur

  • AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor

    M.A. Khan;X. Hu;G. Sumin;A. Lunev

  • Selective gas sensing with a single pristine graphene transistor.

    Sergey Rumyantsev;Sergey Rumyantsev;Guanxiong Liu;Michael S. Shur;Radislav A. Potyrailo

  • AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

    M. Asif Khan;X. Hu;A. Tarakji;Grigory Simin

Frequent Co-Authors

Remis Gaska
Remis Gaska UVTON, Inc.
Grigory Simin
Grigory Simin University of South Carolina
Sergey Rumyantsev
Sergey Rumyantsev University of California, Riverside
Victor Ryzhii
Victor Ryzhii Tohoku University
M. Asif Khan
M. Asif Khan University of South Carolina
Maxim Ryzhii
Maxim Ryzhii University of Aizu
Taiichi Otsuji
Taiichi Otsuji Tohoku University
Vladimir Mitin
Vladimir Mitin University at Buffalo, State University of New York
M.A. Khan
M.A. Khan University of South Carolina
Nezih Pala
Nezih Pala Florida International University

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