M. Asif Khan

M. Asif Khan publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where M. Asif Khan sits on this spectrum.

M. Asif Khan D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where M. Asif Khan sits on this spectrum.

Research.com Recognitions

• 2009 - Fellow of Pakistan Academy of Sciences

Overview

Best Publications

• High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction

  M. Asif Khan;A. Bhattarai;J. N. Kuznia;D. T. Olson

  1210
  Citations

• An assessment of wide bandgap semiconductors for power devices

  J.L. Hudgins;G.S. Simin;E. Santi;M.A. Khan

  711
  Citations

• High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers

  M. Asif Khan;J. N. Kuznia;D. T. Olson;J. M. Van Hove

  541
  Citations

• Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor

  M. Asif Khan;J. N. Kuznia;D. T. Olson;W. J. Schaff

  534
  Citations

• III-Nitride UV Devices

  M. Asif Khan;M. Shatalov;H. P. Maruska;H. M. Wang

  514
  Citations

• Metal semiconductor field effect transistor based on single crystal GaN

  M. Asif Khan;J. N. Kuznia;A. R. Bhattarai;D. T. Olson

  513
  Citations

• Nonresonant Detection of Terahertz Radiation in Field Effect Transistors

  W. Knap;V. Kachorovskii;Y. Deng;S. Rumyantsev

  500
  Citations

• AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor

  M.A. Khan;X. Hu;G. Sumin;A. Lunev

  481
  Citations

• Optically detected magnetic resonance of GaN films grown by organometallic chemical-vapor deposition.

  E. R. Glaser;T. A. Kennedy;K. Doverspike;L. B. Rowland

  459
  Citations

• Growth defects in GaN films on sapphire: The probable origin of threading dislocations

  X. J. Ning;F. R. Chien;P. Pirouz;J. W. Yang

  446
  Citations

• AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

  M. Asif Khan;X. Hu;A. Tarakji;Grigory Simin

  441
  Citations

• Luminescence from stacking faults in gallium nitride

  R. Liu;A. Bell;Fernando Ponce;C. Q. Chen

  429
  Citations

• Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C

  M. Asif Khan;Michael S. Shur;John N. Kuznia;Q. Chen

  380
  Citations

• Si 3 N 4 /AlGaN/GaN-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors

  X. Hu;A. Koudymov;Grigory Simin;J. Yang

  378
  Citations

• Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts to n-type GaN

  B. P. Luther;S. E. Mohney;T. N. Jackson;M. Asif Khan

  355
  Citations

• Carrier mobility model for GaN

  Tigran T Mnatsakanov;Michael E Levinshtein;Lubov I Pomortseva;Sergey N Yurkov

  337
  Citations

• Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates

  R. Gaska;J. W. Yang;A. Osinsky;Q. Chen

  330
  Citations

• Observation of a two‐dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN‐AlxGa1−xN heterojunctions

  M. Asif Khan;J. N. Kuznia;J. M. Van Hove;N. Pan

  319
  Citations

• Low noise p-π-n GaN ultraviolet photodetectors

  A. Osinsky;S. Gangopadhyay;R. Gaska;B. Williams

  318
  Citations

• Electron mobility in two-dimensional electron gas in AlGaN/GaN heterostructures and in bulk GaN

  M. Shur;B. Gelmont;M. Asif Khan

  307
  Citations

• Fundamental optical transitions in GaN

  G. D. Chen;M. Smith;J. Y. Lin;H. X. Jiang

  306
  Citations