M. Asif Khan

Research.com Recognitions

• 2009 - Fellow of Pakistan Academy of Sciences

Overview

Best Publications

• High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction

  M. Asif Khan;A. Bhattarai;J. N. Kuznia;D. T. Olson

  1210
  Citations

• An assessment of wide bandgap semiconductors for power devices

  J.L. Hudgins;G.S. Simin;E. Santi;M.A. Khan

  711
  Citations

• High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers

  M. Asif Khan;J. N. Kuznia;D. T. Olson;J. M. Van Hove

  541
  Citations

• Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor

  M. Asif Khan;J. N. Kuznia;D. T. Olson;W. J. Schaff

  534
  Citations

• III-Nitride UV Devices

  M. Asif Khan;M. Shatalov;H. P. Maruska;H. M. Wang

  514
  Citations

• Metal semiconductor field effect transistor based on single crystal GaN

  M. Asif Khan;J. N. Kuznia;A. R. Bhattarai;D. T. Olson

  513
  Citations

• Nonresonant Detection of Terahertz Radiation in Field Effect Transistors

  W. Knap;V. Kachorovskii;Y. Deng;S. Rumyantsev

  500
  Citations

• AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor

  M.A. Khan;X. Hu;G. Sumin;A. Lunev

  481
  Citations

• Optically detected magnetic resonance of GaN films grown by organometallic chemical-vapor deposition.

  E. R. Glaser;T. A. Kennedy;K. Doverspike;L. B. Rowland

  459
  Citations

• Growth defects in GaN films on sapphire: The probable origin of threading dislocations

  X. J. Ning;F. R. Chien;P. Pirouz;J. W. Yang

  446
  Citations

• AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

  M. Asif Khan;X. Hu;A. Tarakji;Grigory Simin

  441
  Citations

• Luminescence from stacking faults in gallium nitride

  R. Liu;A. Bell;Fernando Ponce;C. Q. Chen

  429
  Citations

• Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C

  M. Asif Khan;Michael S. Shur;John N. Kuznia;Q. Chen

  380
  Citations

• Si 3 N 4 /AlGaN/GaN-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors

  X. Hu;A. Koudymov;Grigory Simin;J. Yang

  378
  Citations

• Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts to n-type GaN

  B. P. Luther;S. E. Mohney;T. N. Jackson;M. Asif Khan

  355
  Citations

• Carrier mobility model for GaN

  Tigran T Mnatsakanov;Michael E Levinshtein;Lubov I Pomortseva;Sergey N Yurkov

  337
  Citations

• Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates

  R. Gaska;J. W. Yang;A. Osinsky;Q. Chen

  330
  Citations

• Observation of a two‐dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN‐AlxGa1−xN heterojunctions

  M. Asif Khan;J. N. Kuznia;J. M. Van Hove;N. Pan

  319
  Citations

• Low noise p-π-n GaN ultraviolet photodetectors

  A. Osinsky;S. Gangopadhyay;R. Gaska;B. Williams

  318
  Citations

• Electron mobility in two-dimensional electron gas in AlGaN/GaN heterostructures and in bulk GaN

  M. Shur;B. Gelmont;M. Asif Khan

  307
  Citations

• Fundamental optical transitions in GaN

  G. D. Chen;M. Smith;J. Y. Lin;H. X. Jiang

  306
  Citations