H-Index & Metrics Top Publications

H-Index & Metrics

Discipline name H-index Citations Publications World Ranking National Ranking
Materials Science H-index 110 Citations 41,909 668 World Ranking 278 National Ranking 123

Research.com Recognitions

Awards & Achievements

2019 - Fellow of the Royal Academy of Engineering (UK)

2017 - Polish Academy of Science

2014 - Fellow, National Academy of Inventors

2014 - Nobel Prize for the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources

2003 - Member of the National Academy of Engineering For contributions to optoelectronic engineering of gallium-nitride materials, culminating in the development of violet/blue lasers and light-emitting diodes.

2002 - Benjamin Franklin Medal, Franklin Institute

1997 - MRS Medal, Materials Research Society For the development of lattice-mismatched GaN-based heteroepitaxy and its application to the creation of blue and green light-emitting diodes and short wavelength laser diodes

1996 - Nishina Memorial Prize

Overview

What is he best known for?

The fields of study he is best known for:

  • Optics
  • Optoelectronics
  • Semiconductor

Shuji Nakamura spends much of his time researching Optoelectronics, Diode, Light-emitting diode, Optics and Laser. Optoelectronics is often connected to Quantum well in his work. Shuji Nakamura has researched Diode in several fields, including Epitaxy, Continuous wave, Active layer, Sapphire and Nitride.

His Light-emitting diode research includes elements of Metalorganic vapour phase epitaxy, Gallium nitride, Electroluminescence, Green-light and Photoluminescence. His Optics research incorporates themes from Layer, Emission spectrum and Phosphor. His work on Laser diode, Semiconductor laser theory and Stimulated emission as part of his general Laser study is frequently connected to Cladding, thereby bridging the divide between different branches of science.

His most cited work include:

  • The blue laser diode : GaN based light emitters and lasers (3950 citations)
  • Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes (3060 citations)
  • InGaN-Based Multi-Quantum-Well-Structure Laser Diodes. (1852 citations)

What are the main themes of his work throughout his whole career to date?

Shuji Nakamura mostly deals with Optoelectronics, Light-emitting diode, Diode, Optics and Quantum well. His research in Optoelectronics intersects with topics in Laser and Nitride. Shuji Nakamura combines subjects such as Metalorganic vapour phase epitaxy, Gallium nitride, Chemical vapor deposition, Electroluminescence and Sapphire with his study of Light-emitting diode.

His Diode research is multidisciplinary, incorporating perspectives in Solid-state lighting, Indium and Continuous wave. His work in Optics addresses subjects such as Epitaxy, which are connected to disciplines such as Substrate and Dislocation. His Quantum well research incorporates elements of Polarization, Spontaneous emission, Condensed matter physics and Photoluminescence.

He most often published in these fields:

  • Optoelectronics (74.77%)
  • Light-emitting diode (38.52%)
  • Diode (33.07%)

What were the highlights of his more recent work (between 2016-2021)?

  • Optoelectronics (74.77%)
  • Light-emitting diode (38.52%)
  • Diode (33.07%)

In recent papers he was focusing on the following fields of study:

The scientist’s investigation covers issues in Optoelectronics, Light-emitting diode, Diode, Quantum well and Laser. His Optoelectronics research includes themes of Metalorganic vapour phase epitaxy and Nitride. The concepts of his Light-emitting diode study are interwoven with issues in Wavelength, Epitaxy, Passivation, Electroluminescence and Sapphire.

His studies deal with areas such as Visible light communication, Indium tin oxide and Optics as well as Diode. His Quantum well study integrates concerns from other disciplines, such as Luminescence, Polarization, Condensed matter physics and Photoluminescence. His work in Laser covers topics such as Tunnel junction which are related to areas like Molecular beam epitaxy.

Between 2016 and 2021, his most popular works were:

  • Sustained high external quantum efficiency in ultrasmall blue III–nitride micro-LEDs (71 citations)
  • High efficiency of III-nitride micro-light-emitting diodes by sidewall passivation using atomic layer deposition (64 citations)
  • Stable, Heat-Conducting Phosphor Composites for High-Power Laser Lighting. (57 citations)

In his most recent research, the most cited papers focused on:

  • Optics
  • Semiconductor
  • Laser

His primary scientific interests are in Optoelectronics, Light-emitting diode, Diode, Quantum efficiency and Quantum well. Shuji Nakamura interconnects Optics and Nitride in the investigation of issues within Optoelectronics. The Light-emitting diode study combines topics in areas such as Sapphire and Epitaxy.

His work carried out in the field of Diode brings together such families of science as Layer, Composite material, Indium tin oxide and Solid-state lighting. His Quantum efficiency research integrates issues from Passivation, Ultraviolet light emitting diodes, Multiple quantum, Etching and Absorption spectroscopy. His Quantum well research is multidisciplinary, relying on both Molecular physics, Photocurrent, Condensed matter physics and Photoluminescence.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Top Publications

The Blue Laser Diode: The Complete Story

Shuji Nakamura;Stephen Pearton;Gerhard Fasol.
(2000)

5458 Citations

Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

Shuji Nakamura;Takashi Mukai;Masayuki Senoh.
Applied Physics Letters (1994)

5044 Citations

The Blue Laser Diode: GaN based Light Emitters and Lasers

Shuji Nakamura;Gerhard Fasol.
(1997)

3360 Citations

InGaN-Based Multi-Quantum-Well-Structure Laser Diodes.

Shuji Nakamura;Masayuki Senoh;Shin–ichi Nagahama;Naruhito Iwasa.
Japanese Journal of Applied Physics (1996)

3009 Citations

Nitride semiconductor light emitting device

Shuji Nakamura;Shinichi Nagahama;Naruhito Iwasa;Hiroyuki Kiyoku.
(2006)

2404 Citations

High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

Shuji Nakamura;Masayuki Senoh;Naruhito Iwasa;Shin–ichi Nagahama.
Japanese Journal of Applied Physics (1995)

1834 Citations

Prospects for LED lighting

Siddha Pimputkar;James S. Speck;Steven P. DenBaars;Shuji Nakamura.
Nature Photonics (2009)

1722 Citations

Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening

T. Fujii;Y. Gao;R. Sharma;E. L. Hu.
Applied Physics Letters (2004)

1637 Citations

Spontaneous emission of localized excitons in InGaN single and multiquantum well structures

Shigefusa Chichibu;T. Azuhata;T. Sota;S. Nakamura.
Applied Physics Letters (1996)

1535 Citations

Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

Shuji Nakamura;Masayuki Senoh;Naruhito Iwasa;Shin–ichi Nagahama.
Japanese Journal of Applied Physics (1995)

1482 Citations

Profile was last updated on December 6th, 2021.
Research.com Ranking is based on data retrieved from the Microsoft Academic Graph (MAG).
The ranking h-index is inferred from publications deemed to belong to the considered discipline.

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