2019 - Fellow of the Royal Academy of Engineering (UK)
2017 - Polish Academy of Science
2014 - Fellow, National Academy of Inventors
2014 - Nobel Prize for the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources
2003 - Member of the National Academy of Engineering For contributions to optoelectronic engineering of gallium-nitride materials, culminating in the development of violet/blue lasers and light-emitting diodes.
2002 - Benjamin Franklin Medal, Franklin Institute
1997 - MRS Medal, Materials Research Society For the development of lattice-mismatched GaN-based heteroepitaxy and its application to the creation of blue and green light-emitting diodes and short wavelength laser diodes
1996 - Nishina Memorial Prize
Shuji Nakamura spends much of his time researching Optoelectronics, Diode, Light-emitting diode, Optics and Laser. Optoelectronics is often connected to Quantum well in his work. Shuji Nakamura has researched Diode in several fields, including Epitaxy, Continuous wave, Active layer, Sapphire and Nitride.
His Light-emitting diode research includes elements of Metalorganic vapour phase epitaxy, Gallium nitride, Electroluminescence, Green-light and Photoluminescence. His Optics research incorporates themes from Layer, Emission spectrum and Phosphor. His work on Laser diode, Semiconductor laser theory and Stimulated emission as part of his general Laser study is frequently connected to Cladding, thereby bridging the divide between different branches of science.
Shuji Nakamura mostly deals with Optoelectronics, Light-emitting diode, Diode, Optics and Quantum well. His research in Optoelectronics intersects with topics in Laser and Nitride. Shuji Nakamura combines subjects such as Metalorganic vapour phase epitaxy, Gallium nitride, Chemical vapor deposition, Electroluminescence and Sapphire with his study of Light-emitting diode.
His Diode research is multidisciplinary, incorporating perspectives in Solid-state lighting, Indium and Continuous wave. His work in Optics addresses subjects such as Epitaxy, which are connected to disciplines such as Substrate and Dislocation. His Quantum well research incorporates elements of Polarization, Spontaneous emission, Condensed matter physics and Photoluminescence.
The scientist’s investigation covers issues in Optoelectronics, Light-emitting diode, Diode, Quantum well and Laser. His Optoelectronics research includes themes of Metalorganic vapour phase epitaxy and Nitride. The concepts of his Light-emitting diode study are interwoven with issues in Wavelength, Epitaxy, Passivation, Electroluminescence and Sapphire.
His studies deal with areas such as Visible light communication, Indium tin oxide and Optics as well as Diode. His Quantum well study integrates concerns from other disciplines, such as Luminescence, Polarization, Condensed matter physics and Photoluminescence. His work in Laser covers topics such as Tunnel junction which are related to areas like Molecular beam epitaxy.
His primary scientific interests are in Optoelectronics, Light-emitting diode, Diode, Quantum efficiency and Quantum well. Shuji Nakamura interconnects Optics and Nitride in the investigation of issues within Optoelectronics. The Light-emitting diode study combines topics in areas such as Sapphire and Epitaxy.
His work carried out in the field of Diode brings together such families of science as Layer, Composite material, Indium tin oxide and Solid-state lighting. His Quantum efficiency research integrates issues from Passivation, Ultraviolet light emitting diodes, Multiple quantum, Etching and Absorption spectroscopy. His Quantum well research is multidisciplinary, relying on both Molecular physics, Photocurrent, Condensed matter physics and Photoluminescence.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
The Blue Laser Diode: The Complete Story
Shuji Nakamura;Stephen Pearton;Gerhard Fasol.
(2000)
Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
Shuji Nakamura;Takashi Mukai;Masayuki Senoh.
Applied Physics Letters (1994)
The Blue Laser Diode: GaN based Light Emitters and Lasers
Shuji Nakamura;Gerhard Fasol.
(1997)
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes.
Shuji Nakamura;Masayuki Senoh;Shin–ichi Nagahama;Naruhito Iwasa.
Japanese Journal of Applied Physics (1996)
Nitride semiconductor light emitting device
Shuji Nakamura;Shinichi Nagahama;Naruhito Iwasa;Hiroyuki Kiyoku.
(2006)
High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
Shuji Nakamura;Masayuki Senoh;Naruhito Iwasa;Shin–ichi Nagahama.
Japanese Journal of Applied Physics (1995)
Prospects for LED lighting
Siddha Pimputkar;James S. Speck;Steven P. DenBaars;Shuji Nakamura.
Nature Photonics (2009)
Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
T. Fujii;Y. Gao;R. Sharma;E. L. Hu.
Applied Physics Letters (2004)
Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
Shigefusa Chichibu;T. Azuhata;T. Sota;S. Nakamura.
Applied Physics Letters (1996)
Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
Shuji Nakamura;Masayuki Senoh;Naruhito Iwasa;Shin–ichi Nagahama.
Japanese Journal of Applied Physics (1995)
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