Masayuki Senoh

Overview

Best Publications

• Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

  Shuji Nakamura;Takashi Mukai;Masayuki Senoh

  5669
  Citations

• InGaN-Based Multi-Quantum-Well-Structure Laser Diodes.

  Shuji Nakamura;Masayuki Senoh;Shin–ichi Nagahama;Naruhito Iwasa

  3223
  Citations

• High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures

  Shuji Nakamura;Masayuki Senoh;Naruhito Iwasa;Shin–ichi Nagahama

  2086
  Citations

• Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

  Shuji Nakamura;Masayuki Senoh;Naruhito Iwasa;Shin–ichi Nagahama

  1588
  Citations

• Hole Compensation Mechanism of P-Type GaN Films

  Shuji Nakamura;Naruhito Iwasa;Masayuki Senoh;Takashi Mukai

  1506
  Citations

• Thermal Annealing Effects on P-Type Mg-Doped GaN Films

  Shuji Nakamura;Takashi Mukai;Masayuki Senoh;Naruhito Iwasa

  1420
  Citations

• InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

  Shuji Nakamura;Masayuki Senoh;Shin-ichi Nagahama;Naruhito Iwasa

  1222
  Citations

• High-power GaN P-N junction blue-light-emitting diodes

  Shuji Nakamura;Takashi Mukai;Masayuki Senoh

  1042
  Citations

• High‐power InGaN/GaN double‐heterostructure violet light emitting diodes

  Shuji Nakamura;Masayuki Senoh;Takashi Mukai

  957
  Citations

• High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes

  Shuji Nakamura;Masayuki Senoh;Naruhito Iwasa;Shin‐ichi Nagahama

  891
  Citations

• P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes

  Shuji Nakamura;Masayuki Senoh;Takashi Mukai

  819
  Citations

• Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes

  Shuji Nakamura;Masayuki Senoh;Shin‐ichi Nagahama;Naruhito Iwasa

  750
  Citations

• High‐brightness InGaN/AlGaN double‐heterostructure blue‐green‐light‐emitting diodes

  Shuji Nakamura;Takashi Mukai;Masayuki Senoh

  626
  Citations

• InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices

  Shuji Nakamura;Masayuki Senoh;Shin-ichi Nagahama;Naruhito Iwasa

  610
  Citations

• Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers

  Shuji Nakamura;Masayuki Senoh;Takashi Mukai

  558
  Citations

• CONTINUOUS-WAVE OPERATION OF INGAN/GAN/ALGAN-BASED LASER DIODES GROWN ON GAN SUBSTRATES

  Shuji Nakamura;Masayuki Senoh;Shin-ichi Nagahama;Naruhito Iwasa

  471
  Citations

• Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours

  Shuji Nakamura;Masayuki Senoh;Shin-ichi Nagahama;Naruhito Iwasa

  438
  Citations

• InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets

  Shuji Nakamura;Masayuki Senoh;Shin–ichi Nagahama;Naruhito Iwasa

  413
  Citations

• Blue InGaN-based laser diodes with an emission wavelength of 450 nm

  Shuji Nakamura;Masayuki Senoh;Shin-ichi Nagahama;Naruhito Iwasa

  384
  Citations

• Gallium nitride-based III-V group compound semiconductor

  Shuji Nakamura;Takao Yamada;Masayuki Senoh;Motokazu Yamada

  384
  Citations