D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Engineering and Technology D-index 40 Citations 28,493 54 World Ranking 3480 National Ranking 47

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Light-emitting diode
  • Laser

Masayuki Senoh spends much of his time researching Optoelectronics, Diode, Quantum efficiency, Light-emitting diode and Quantum well. His study brings together the fields of Laser and Diode. His work on Gan algan as part of general Laser study is frequently connected to Cladding, therefore bridging the gap between diverse disciplines of science and establishing a new relationship between them.

His research integrates issues of Wavelength, Luminous intensity, Electroluminescence and Active layer in his study of Quantum efficiency. His work deals with themes such as p–n junction and Full width at half maximum, which intersect with Light-emitting diode. In his work, Nitride is strongly intertwined with Sapphire, which is a subfield of Quantum well.

His most cited work include:

  • Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes (3060 citations)
  • InGaN-Based Multi-Quantum-Well-Structure Laser Diodes. (1852 citations)
  • High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures (1180 citations)

What are the main themes of his work throughout his whole career to date?

Masayuki Senoh mostly deals with Optoelectronics, Diode, Laser, Quantum well and Sapphire. Masayuki Senoh interconnects Gallium nitride and Active layer in the investigation of issues within Optoelectronics. His study in Diode is interdisciplinary in nature, drawing from both Nitride, Wavelength, Transverse mode and Epitaxy.

In general Laser, his work in Continuous wave, Laser diode, Lasing threshold and Gan algan is often linked to Cladding linking many areas of study. His Quantum well research is multidisciplinary, incorporating perspectives in Stimulated emission and Carrier lifetime. His Quantum efficiency research includes themes of Luminous intensity, Full width at half maximum, Heterojunction, Electroluminescence and Green-light.

He most often published in these fields:

  • Optoelectronics (84.13%)
  • Diode (58.73%)
  • Laser (47.62%)

What were the highlights of his more recent work (between 2000-2009)?

  • Optoelectronics (84.13%)
  • Gallium nitride (17.46%)
  • Active layer (20.63%)

In recent papers he was focusing on the following fields of study:

His main research concerns Optoelectronics, Gallium nitride, Active layer, Laser and Diode. His Optoelectronics study frequently intersects with other fields, such as Nitride semiconductors. The various areas that he examines in his Gallium nitride study include Sapphire, Epitaxy, Compound semiconductor and Semiconductor laser theory.

His Active layer research incorporates themes from Wide-bandgap semiconductor and Crystal structure. His research on Laser also deals with topics like

  • Semiconductor and related Wavelength,
  • Resonator that connect with fields like Etching. He usually deals with Diode and limits it to topics linked to Light-emitting diode and Luminous efficacy, Nitride and Quantum efficiency.

Between 2000 and 2009, his most popular works were:

  • Semicondutor laser device and its manufacturing method (59 citations)
  • Nitride light-emitting diodes (37 citations)
  • GaN‐Based Light‐Emitting Diodes and Laser Diodes, and Their Recent Progress (28 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Laser
  • Light-emitting diode

His primary areas of investigation include Optoelectronics, Laser, Active layer, Diode and Light-emitting diode. His research in the fields of Threshold current and Quantum efficiency overlaps with other disciplines such as Vertical direction. Threshold current is frequently linked to Wavelength in his study.

His biological study spans a wide range of topics, including Luminous efficacy and Nitride. Among his Vertical direction studies, you can observe a synthesis of other disciplines of science such as Total internal reflection, Projection, Etching and Resonator. Masayuki Senoh has researched Diode in several fields, including Gallium nitride and Indium nitride.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

Shuji Nakamura;Takashi Mukai;Masayuki Senoh.
Applied Physics Letters (1994)

5383 Citations

InGaN-Based Multi-Quantum-Well-Structure Laser Diodes.

Shuji Nakamura;Masayuki Senoh;Shin–ichi Nagahama;Naruhito Iwasa.
Japanese Journal of Applied Physics (1996)

3110 Citations

High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures

Shuji Nakamura;Masayuki Senoh;Naruhito Iwasa;Shin–ichi Nagahama.
Japanese Journal of Applied Physics (1995)

2003 Citations

Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

Shuji Nakamura;Masayuki Senoh;Naruhito Iwasa;Shin–ichi Nagahama.
Japanese Journal of Applied Physics (1995)

1562 Citations

Hole Compensation Mechanism of P-Type GaN Films

Shuji Nakamura;Naruhito Iwasa;Masayuki Senoh;Takashi Mukai.
Japanese Journal of Applied Physics (1992)

1414 Citations

Thermal Annealing Effects on P-Type Mg-Doped GaN Films

Shuji Nakamura;Takashi Mukai;Masayuki Senoh;Naruhito Iwasa.
Japanese Journal of Applied Physics (1992)

1322 Citations

InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

Shuji Nakamura;Masayuki Senoh;Shin-ichi Nagahama;Naruhito Iwasa.
Applied Physics Letters (1998)

1196 Citations

High-power GaN P-N junction blue-light-emitting diodes

Shuji Nakamura;Takashi Mukai;Masayuki Senoh.
Japanese Journal of Applied Physics (1991)

973 Citations

High‐power InGaN/GaN double‐heterostructure violet light emitting diodes

Shuji Nakamura;Masayuki Senoh;Takashi Mukai.
Applied Physics Letters (1993)

924 Citations

High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes

Shuji Nakamura;Masayuki Senoh;Naruhito Iwasa;Shin‐ichi Nagahama.
Applied Physics Letters (1995)

861 Citations

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