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Electronics and Electrical Engineering

D-Index
38
Citations
10369
World Ranking
4804
National Ranking
191

Overview

Masahiko Sano is affiliated with Nichia Corporation in Japan. Their research primarily spans the field of Engineering, with a focus on several subfields including Electrical and Electronic Engineering, Biomedical Engineering, Condensed Matter Physics, Atomic and Molecular Physics and Optics, and Aerospace Engineering.

Sano's work covers a range of main topics related to semiconductor devices, imaging sensors, and circuit design. These topics include:

  • GaN-based semiconductor devices and materials
  • Nanowire Synthesis and Applications
  • CCD and CMOS Imaging Sensors
  • Analog and Mixed-Signal Circuit Design
  • Advanced Semiconductor Detectors and Materials
  • Semiconductor Quantum Structures and Devices
  • Infrared Target Detection Methodologies

Their recent publications demonstrate contributions across multiple research venues and collaborative efforts. Notable papers authored or coauthored by Sano include:

  • "Mid-wavelength infrared focal plane array based on type II InAs/GaSb superlattices on InP substrate," 2024, published in Infrared Physics & Technology
  • "Graphene/AlGaN Schottky barrier photodiodes and its application for array devices," 2022, Japanese Journal of Applied Physics
  • "Uncooled Si infrared photodetector for 2 μm wavelength using stimulated emission by dressed photons," 2022, Applied Physics Express
  • "Fabrication and Demonstration of VGA Format Microbolometer FPAs using Semi-Conducting SWCNT Networks for Uncooled LWIR Image Sensor," 2023, Proceedings of the International Display Workshops
  • "A CMOS Temperature Sensor with Threshold Voltage Compensation," 2024, Proceedings of the International Display Workshops

Sano frequently publishes in the following venues:

  • Proceedings of the International Display Workshops
  • Japanese Journal of Applied Physics
  • Infrared Physics & Technology
  • Applied Physics Express

They have collaborated frequently with several researchers, strengthening the breadth of their work. Frequent coauthors include:

  • Takashi Mukai
  • Ryota Yuge
  • T. Togashi
  • Yoshihiro Komatsu
  • T. Tanaka

Best Publications

  • InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

    Shuji Nakamura;Masayuki Senoh;Shin-ichi Nagahama;Naruhito Iwasa

  • White light emitting diodes with super-high luminous efficacy

    Yukio Narukawa;Masatsugu Ichikawa;Daisuke Sanga;Masahiko Sano

  • Nitride semiconductor device with a supporting substrate and a method for producing the same

    Masahiko Sano;Mitsuhiro Nonaka;Kazumi Kamada;Masashi Yamamoto

  • InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices

    Shuji Nakamura;Masayuki Senoh;Shin-ichi Nagahama;Naruhito Iwasa

  • InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode

    Motokazu Yamada;Tomotsugu Mitani;Yukio Narukawa;Shuji Shioji

  • Nitride semiconductor laser device

    Tokuya Kozaki;Masahiko Sano;Shuji Nakamura;Shinichi Nagahama

  • CONTINUOUS-WAVE OPERATION OF INGAN/GAN/ALGAN-BASED LASER DIODES GROWN ON GAN SUBSTRATES

    Shuji Nakamura;Masayuki Senoh;Shin-ichi Nagahama;Naruhito Iwasa

  • Light emitting apparatus and method of manufacturing the same

    Kunihiro Izuno;Kouki Matsumoto;Shinichi Nagahama;Masahiko Sano

  • High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates

    Shuji Nakamura;Masayuki Senoh;Shin–ichi Nagahama;Naruhito Iwasa

  • Nitride semiconductor element mfg. method and nitride semiconductor element

    Shinichi Nagahama;Masahiko Sano;Tomohisashi Yanagimoto

  • LIGHT-EMITTING DEVICE AND METHOD OF MAKING SAID DEVICE

    Minato Shunsuke;Sano Masahiko

  • High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates

    Shin-ichi Nagahama;Naruhito Iwasa;Masayuki Senoh;Toshio Matsushita

  • Violet InGaN/GaN/AlGaN-Based Laser Diodes Operable at 50°C with a Fundamental Transverse Mode

    Shuji Nakamura;Masayuki Senoh;Shin-ichi Nagahama;Toshio Matsushita

  • Recent progress of high efficiency white LEDs

    Yukio Narukawa;Junya Narita;Takahiko Sakamoto;Takao Yamada

  • Improvement of Luminous Efficiency in White Light Emitting Diodes by Reducing a Forward-bias Voltage

    Yukio Narukawa;Masahiko Sano;Masatsugu Ichikawa;Shunsuke Minato

  • InGaN/GaN/AlGaN-based laser diodes with cleaved facets grown on GaN substrates

    Shuji Nakamura;Masayuki Senoh;Shin-ichi Nagahama;Naruhito Iwasa

  • InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates with a Fundamental Transverse Mode

    Shuji Nakamura;Masayuki Senoh;Shin–ichi Nagahama;Naruhito Iwasa

  • Present status of InGaN/GaN/AlGaN-based laser diodes

    Shuji Nakamura;Masayuki Senoh;Shin-ichi Nagahama;Naruhito Iwasa

  • Recent development of nitride LEDs and LDs

    Atsuo Michiue;Takashi Miyoshi;Tomoya Yanamoto;Tokuya Kozaki

  • High Output Power 365 nm Ultraviolet Light Emitting Diode of GaN-Free Structure

    Daisuke Morita;Masahiko Sano;Masashi Yamamoto;Takashi Murayama

Frequent Co-Authors

Shin-ichi Nagahama
Shin-ichi Nagahama Nichia Corporation (Japan)
Takashi Mukai
Takashi Mukai National Institute of Advanced Industrial Science and Technology
Takao Yamada
Takao Yamada Nichia Corporation (Japan)
Shuji Nakamura
Shuji Nakamura University of California, Santa Barbara
Yukio Narukawa
Yukio Narukawa Nichia Corporation (Japan)

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