World's Best Scientists 2026 revealed!
Tetsuya Takeuchi

Tetsuya Takeuchi

D-Index & Metrics

Materials Science

D-Index
45
Citations
11559
World Ranking
11605
National Ranking
716

Tetsuya Takeuchi publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Tetsuya Takeuchi sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 491 publications — 86th percentile

86% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Tetsuya Takeuchi D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Tetsuya Takeuchi sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 45 D-Index — 10th percentile

10% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Tetsuya Takeuchi is a researcher affiliated with Meijo University in Japan. Their work spans several fields primarily focused on physics, engineering, and materials science, reflecting a multidisciplinary approach to semiconductor and optical device research.

The main areas of study for their research include:

  • Physics and Astronomy
  • Engineering
  • Materials Science

Within these broader fields, Takeuchi has specialized in several subfields such as:

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Biomedical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

Their research extensively addresses topics related to semiconductor materials and devices, with a particular emphasis on:

  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • ZnO doping and properties
  • Semiconductor Quantum Structures and Devices
  • Metal and Thin Film Mechanics
  • Photocathodes and Microchannel Plates
  • Semiconductor materials and devices

Takeuchi has contributed to notable research on AlGaN-based ultraviolet-B laser diodes and their optical properties. Some representative recent publications include:

  • Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0.6Ga0.4N/AlN/sapphire, 2020, Applied Physics Express
  • AlGaN-based UV-B laser diode with a high optical confinement factor, 2021, Applied Physics Letters
  • Internal loss of AlGaN-based ultraviolet-B band laser diodes with p-type AlGaN cladding layer using polarization doping, 2020, Applied Physics Express
  • Effect of dislocation density on optical gain and internal loss of AlGaN-based ultraviolet-B band lasers, 2020, Applied Physics Express
  • RGB monolithic GaInN-based μLED arrays connected via tunnel junctions, 2023, Applied Physics Express

The researcher often publishes in the following journals:

  • Applied Physics Express
  • Japanese Journal of Applied Physics
  • physica status solidi (a)
  • Applied Physics Letters
  • physica status solidi (b)

Frequent collaborators in their work include:

  • Satoshi Kamiyama
  • Motoaki Iwaya
  • Isamu Akasaki
  • Sho Iwayama
  • Hideto Miyake

Best Publications

  • Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

    Tetsuya Takeuchi;Shigetoshi Sota;Maki Katsuragawa;Miho Komori

  • Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect

    Tetsuya Takeuchi;Christian Wetzel;Shigeo Yamaguchi;Hiromitsu Sakai

  • Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells

    Tetsuya Takeuchi;Hiroshi Amano;Isamu Akasaki

  • Optical Properties of Strained AlGaN and GaInN on GaN

    Tetsuya Takeuchi;Hideo Takeuchi;Shigetoshi Sota;Hiromitsu Sakai

  • The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer

    A. Watanabe;T. Takeuchi;K. Hirosawa;H. Amano

  • Pit formation in GaInN quantum wells

    Y. Chen;T. Takeuchi;H. Amano;I. Akasaki

  • Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells

    Kazuhito Ban;Jun-ichi Yamamoto;Kenichiro Takeda;Kimiyasu Ide

  • Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN

    Motoaki Iwaya;Tetsuya Takeuchi;Shigeo Yamaguchi;Christian Wetzel

  • Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer

    Tetsuya Takeuchi;Hiroshi Amano;Kazumasa Hiramatsu;Nobuhiko Sawaki

  • Optical band gap in Ga1−xInxN (0<x<0.2) on GaN by photoreflection spectroscopy

    C. Wetzel;T. Takeuchi;S. Yamaguchi;H. Katoh

  • A dual-wavelength indium gallium nitride quantum well light emitting diode

    I. Ozden;E. Makarona;A. V. Nurmikko;T. Takeuchi

  • Thermal ionization energy of Si and Mg in AlGaN

    Maki Katsuragawa;Shigetoshi Sota;Miho Komori;Chitoshi Anbe

  • Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy

    Shigeo Yamaguchi;Michihiko Kariya;Shugo Nitta;Tetsuya Takeuchi

  • Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions

    Yuka Kuwano;Mitsuru Kaga;Takatoshi Morita;Kouji Yamashita

  • Anomalous features in the optical properties of Al1−xInxN on GaN grown by metal organic vapor phase epitaxy

    Shigeo Yamaguchi;Michihiko Kariya;Shugo Nitta;Tetsuya Takeuchi

  • Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction

    M. Diagne;Y. He;H. Zhou;E. Makarona

  • Piezoelectric Franz-Keldysh effect in strained GaInN/GaN heterostructures

    C. Wetzel;T. Takeuchi;H. Amano;I. Akasaki

  • Resonant-cavity InGaN quantum-well blue light-emitting diodes

    Y.-K. Song;M. Diagne;H. Zhou;A. V. Nurmikko

  • Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure

    Satoshi Kamiyama;Motoaki Iwaya;Nobuaki Hayashi;Tetsuya Takeuchi

  • Structural and optical properties of AlInN and AlGaInN on GaN grown by metalorganic vapor phase epitaxy

    Shigeo Yamaguchi;Michihiko Kariya;Shugo Nitta;Hisaki Kato

Frequent Co-Authors

isamu akasaki
isamu akasaki Meijo University
Motoaki Iwaya
Motoaki Iwaya Meijo University
Satoshi Kamiyama
Satoshi Kamiyama Meijo University
Hiroshi Amano
Hiroshi Amano Nagoya University
Takashi Egawa
Takashi Egawa Nagoya Institute of Technology
Akira Yoshikawa
Akira Yoshikawa Tohoku University
Tadakatsu Ohkubo
Tadakatsu Ohkubo National Institute for Materials Science
Theeradetch Detchprohm
Theeradetch Detchprohm Georgia Institute of Technology
Shigefusa F. Chichibu
Shigefusa F. Chichibu Tohoku University
Kazuhiro Hono
Kazuhiro Hono National Institute for Materials Science

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