Tetsuya Takeuchi

Overview

Best Publications

• Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

  Tetsuya Takeuchi;Shigetoshi Sota;Maki Katsuragawa;Miho Komori

  1577
  Citations

• Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect

  Tetsuya Takeuchi;Christian Wetzel;Shigeo Yamaguchi;Hiromitsu Sakai

  826
  Citations

• Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells

  Tetsuya Takeuchi;Hiroshi Amano;Isamu Akasaki

  663
  Citations

• Optical Properties of Strained AlGaN and GaInN on GaN

  Tetsuya Takeuchi;Hideo Takeuchi;Shigetoshi Sota;Hiromitsu Sakai

  420
  Citations

• The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer

  A. Watanabe;T. Takeuchi;K. Hirosawa;H. Amano

  384
  Citations

• Pit formation in GaInN quantum wells

  Y. Chen;T. Takeuchi;H. Amano;I. Akasaki

  340
  Citations

• Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells

  Kazuhito Ban;Jun-ichi Yamamoto;Kenichiro Takeda;Kimiyasu Ide

  334
  Citations

• Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN

  Motoaki Iwaya;Tetsuya Takeuchi;Shigeo Yamaguchi;Christian Wetzel

  271
  Citations

• Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer

  Tetsuya Takeuchi;Hiroshi Amano;Kazumasa Hiramatsu;Nobuhiko Sawaki

  265
  Citations

• Optical band gap in Ga1−xInxN (0<x<0.2) on GaN by photoreflection spectroscopy

  C. Wetzel;T. Takeuchi;S. Yamaguchi;H. Katoh

  252
  Citations

• A dual-wavelength indium gallium nitride quantum well light emitting diode

  I. Ozden;E. Makarona;A. V. Nurmikko;T. Takeuchi

  191
  Citations

• Thermal ionization energy of Si and Mg in AlGaN

  Maki Katsuragawa;Shigetoshi Sota;Miho Komori;Chitoshi Anbe

  166
  Citations

• Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy

  Shigeo Yamaguchi;Michihiko Kariya;Shugo Nitta;Tetsuya Takeuchi

  162
  Citations

• Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions

  Yuka Kuwano;Mitsuru Kaga;Takatoshi Morita;Kouji Yamashita

  155
  Citations

• Anomalous features in the optical properties of Al1−xInxN on GaN grown by metal organic vapor phase epitaxy

  Shigeo Yamaguchi;Michihiko Kariya;Shugo Nitta;Tetsuya Takeuchi

  149
  Citations

• Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction

  M. Diagne;Y. He;H. Zhou;E. Makarona

  140
  Citations

• Piezoelectric Franz-Keldysh effect in strained GaInN/GaN heterostructures

  C. Wetzel;T. Takeuchi;H. Amano;I. Akasaki

  131
  Citations

• Resonant-cavity InGaN quantum-well blue light-emitting diodes

  Y.-K. Song;M. Diagne;H. Zhou;A. V. Nurmikko

  130
  Citations

• Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure

  Satoshi Kamiyama;Motoaki Iwaya;Nobuaki Hayashi;Tetsuya Takeuchi

  125
  Citations

• Structural and optical properties of AlInN and AlGaInN on GaN grown by metalorganic vapor phase epitaxy

  Shigeo Yamaguchi;Michihiko Kariya;Shugo Nitta;Hisaki Kato

  123
  Citations