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Tetsuya Takeuchi

Tetsuya Takeuchi

Meijo University
Japan

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 45 11605 11216 716 681 491 11559

Tetsuya Takeuchi publications per year

The chart shows the history of publications by Tetsuya Takeuchi between 1991 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Tetsuya Takeuchi published across 35 years, from 1991 to 2025, averaging 14.8 papers a year. Output peaked at 78 publications in 2021. 32 of the 519 publications appeared in the last two years.

No. of publications
25 50 75
Bar chart. Horizontal axis: year, 1991 to 2025. Vertical axis: number of publications, 0 to 78. Peak 78 publications in 2021. 1991: 1 publication 1992: 0 publications 1993: 1 publication 1994: 0 publications 1995: 1 publication 1996: 4 publications 1997: 7 publications 1998: 16 publications 1999: 15 publications 2000: 18 publications 2001: 9 publications 2002: 4 publications 2003: 2 publications 2004: 2 publications 2005: 0 publications 2006: 0 publications 2007: 0 publications 2008: 0 publications 2009: 0 publications 2010: 1 publication 2011: 24 publications 2012: 16 publications 2013: 20 publications 2014: 16 publications 2015: 8 publications 2016: 38 publications 2017: 31 publications 2018: 27 publications 2019: 57 publications 2020: 52 publications 2021: 78 publications 2022: 25 publications 2023: 14 publications 2024: 23 publications 2025: 9 publications
1991 2025

519 publications in total across all disciplines

View publications per year as a table
Tetsuya Takeuchi: publications per year, 1991 to 2025
Year Publications
1991 1
1992 0
1993 1
1994 0
1995 1
1996 4
1997 7
1998 16
1999 15
2000 18
2001 9
2002 4
2003 2
2004 2
2005 0
2006 0
2007 0
2008 0
2009 0
2010 1
2011 24
2012 16
2013 20
2014 16
2015 8
2016 38
2017 31
2018 27
2019 57
2020 52
2021 78
2022 25
2023 14
2024 23
2025 9
Total 519
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Tetsuya Takeuchi publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Tetsuya Takeuchi sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 490–509 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 491 publications — 86th percentile

86% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174 491
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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Tetsuya Takeuchi D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Tetsuya Takeuchi sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 44–45 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 45 D-Index — 10th percentile

10% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612 45
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Overview

Tetsuya Takeuchi is a researcher affiliated with Meijo University in Japan. Their work spans several fields primarily focused on physics, engineering, and materials science, reflecting a multidisciplinary approach to semiconductor and optical device research.

The main areas of study for their research include:

  • Physics and Astronomy
  • Engineering
  • Materials Science

Within these broader fields, Takeuchi has specialized in several subfields such as:

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Biomedical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

Their research extensively addresses topics related to semiconductor materials and devices, with a particular emphasis on:

  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • ZnO doping and properties
  • Semiconductor Quantum Structures and Devices
  • Metal and Thin Film Mechanics
  • Photocathodes and Microchannel Plates
  • Semiconductor materials and devices

Takeuchi has contributed to notable research on AlGaN-based ultraviolet-B laser diodes and their optical properties. Some representative recent publications include:

  • Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0.6Ga0.4N/AlN/sapphire, 2020, Applied Physics Express
  • AlGaN-based UV-B laser diode with a high optical confinement factor, 2021, Applied Physics Letters
  • Internal loss of AlGaN-based ultraviolet-B band laser diodes with p-type AlGaN cladding layer using polarization doping, 2020, Applied Physics Express
  • Effect of dislocation density on optical gain and internal loss of AlGaN-based ultraviolet-B band lasers, 2020, Applied Physics Express
  • RGB monolithic GaInN-based μLED arrays connected via tunnel junctions, 2023, Applied Physics Express

The researcher often publishes in the following journals:

  • Applied Physics Express
  • Japanese Journal of Applied Physics
  • physica status solidi (a)
  • Applied Physics Letters
  • physica status solidi (b)

Frequent collaborators in their work include:

  • Satoshi Kamiyama
  • Motoaki Iwaya
  • Isamu Akasaki
  • Sho Iwayama
  • Hideto Miyake

Best Publications

  • Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

    Tetsuya Takeuchi;Shigetoshi Sota;Maki Katsuragawa;Miho Komori

  • Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect

    Tetsuya Takeuchi;Christian Wetzel;Shigeo Yamaguchi;Hiromitsu Sakai

  • Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells

    Tetsuya Takeuchi;Hiroshi Amano;Isamu Akasaki

  • Optical Properties of Strained AlGaN and GaInN on GaN

    Tetsuya Takeuchi;Hideo Takeuchi;Shigetoshi Sota;Hiromitsu Sakai

  • The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer

    A. Watanabe;T. Takeuchi;K. Hirosawa;H. Amano

  • Pit formation in GaInN quantum wells

    Y. Chen;T. Takeuchi;H. Amano;I. Akasaki

  • Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells

    Kazuhito Ban;Jun-ichi Yamamoto;Kenichiro Takeda;Kimiyasu Ide

  • Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN

    Motoaki Iwaya;Tetsuya Takeuchi;Shigeo Yamaguchi;Christian Wetzel

  • Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer

    Tetsuya Takeuchi;Hiroshi Amano;Kazumasa Hiramatsu;Nobuhiko Sawaki

  • Optical band gap in Ga1−xInxN (0<x<0.2) on GaN by photoreflection spectroscopy

    C. Wetzel;T. Takeuchi;S. Yamaguchi;H. Katoh

  • A dual-wavelength indium gallium nitride quantum well light emitting diode

    I. Ozden;E. Makarona;A. V. Nurmikko;T. Takeuchi

  • Thermal ionization energy of Si and Mg in AlGaN

    Maki Katsuragawa;Shigetoshi Sota;Miho Komori;Chitoshi Anbe

  • Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy

    Shigeo Yamaguchi;Michihiko Kariya;Shugo Nitta;Tetsuya Takeuchi

  • Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions

    Yuka Kuwano;Mitsuru Kaga;Takatoshi Morita;Kouji Yamashita

  • Anomalous features in the optical properties of Al1−xInxN on GaN grown by metal organic vapor phase epitaxy

    Shigeo Yamaguchi;Michihiko Kariya;Shugo Nitta;Tetsuya Takeuchi

  • Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction

    M. Diagne;Y. He;H. Zhou;E. Makarona

  • Piezoelectric Franz-Keldysh effect in strained GaInN/GaN heterostructures

    C. Wetzel;T. Takeuchi;H. Amano;I. Akasaki

  • Resonant-cavity InGaN quantum-well blue light-emitting diodes

    Y.-K. Song;M. Diagne;H. Zhou;A. V. Nurmikko

  • Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure

    Satoshi Kamiyama;Motoaki Iwaya;Nobuaki Hayashi;Tetsuya Takeuchi

  • Structural and optical properties of AlInN and AlGaInN on GaN grown by metalorganic vapor phase epitaxy

    Shigeo Yamaguchi;Michihiko Kariya;Shugo Nitta;Hisaki Kato

Frequent Co-Authors

isamu akasaki
isamu akasaki Meijo University
Motoaki Iwaya
Motoaki Iwaya Meijo University
Satoshi Kamiyama
Satoshi Kamiyama Meijo University
Hiroshi Amano
Hiroshi Amano Nagoya University
Takashi Egawa
Takashi Egawa Nagoya Institute of Technology
Akira Yoshikawa
Akira Yoshikawa Tohoku University
Tadakatsu Ohkubo
Tadakatsu Ohkubo National Institute for Materials Science
Theeradetch Detchprohm
Theeradetch Detchprohm Georgia Institute of Technology
Shigefusa F. Chichibu
Shigefusa F. Chichibu Tohoku University
Kazuhiro Hono
Kazuhiro Hono National Institute for Materials Science

External Links

Personal website of Tetsuya Takeuchi

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Best Scientists Citing Tetsuya Takeuchi

Hiroshi Amano

Hiroshi Amano

Nagoya University

Publications: 153

Steven P. DenBaars

Steven P. DenBaars

University of California, Santa Barbara

Publications: 150

Shuji Nakamura

Shuji Nakamura

University of California, Santa Barbara

Publications: 135

James S. Speck

James S. Speck

University of California, Santa Barbara

Publications: 128

isamu akasaki

isamu akasaki

Meijo University

Publications: 116

Shigefusa F. Chichibu

Shigefusa F. Chichibu

Tohoku University

Publications: 71

Motoaki Iwaya

Motoaki Iwaya

Meijo University

Publications: 63

Yoichi Kawakami

Yoichi Kawakami

Kyoto University

Publications: 52

Michael Kneissl

Michael Kneissl

Technical University of Berlin

Publications: 51

Tao Wang

Tao Wang

Stanford University

Publications: 51

Satoshi Kamiyama

Satoshi Kamiyama

Meijo University

Publications: 48

Takashi Mukai

Takashi Mukai

National Institute of Advanced Industrial Science and Technology

Publications: 47

Nicolas Grandjean

Nicolas Grandjean

École Polytechnique Fédérale de Lausanne

Publications: 47

Theeradetch Detchprohm

Theeradetch Detchprohm

Georgia Institute of Technology

Publications: 44

Umesh K. Mishra

Umesh K. Mishra

University of California, Santa Barbara

Publications: 39

Siddharth Rajan

Siddharth Rajan

The Ohio State University

Publications: 37

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