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Hiroshi Amano

Hiroshi Amano

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Electronics and Electrical Engineering
Japan
2026
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Materials Science
Japan
2022

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
92
Citations
45045
World Ranking
268
National Ranking
5

Materials Science

D-Index
97
Citations
47028
World Ranking
1182
National Ranking
41

Physics

D-Index
95
Citations
46515
World Ranking
1902
National Ranking
48

Research.com Recognitions

  • 2026 - Research.com Electronics and Electrical Engineering in Japan Leader Award
  • 2025 - Research.com Electronics and Electrical Engineering in Japan Leader Award
  • 2023 - Research.com Electronics and Electrical Engineering in Japan Leader Award
  • 2022 - Research.com Electronics and Electrical Engineering in Japan Leader Award
  • 2022 - Research.com Materials Science in Japan Leader Award
  • 2017 - Fellow, National Academy of Inventors
  • 2016 - Member of the National Academy of Engineering For development of p-type gallium nitride (GaN) doping, enabling blue semiconductor LEDs.
  • 2014 - Nobel Prize for the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources

Overview

Hiroshi Amano is affiliated with Nagoya University in Japan and specializes in research areas intersecting physics, engineering, and materials science. Their scholarly output includes extensive work in subfields such as condensed matter physics, electrical and electronic engineering, electronic, optical and magnetic materials, atomic and molecular physics and optics, as well as materials chemistry.

The research topics covered by Amano prominently feature GaN-based semiconductor devices and materials, Ga2O3 and related materials, semiconductor materials and devices, semiconductor quantum structures and devices, ZnO doping and properties, photocathodes and microchannel plates, and metal and thin film mechanics.

Amano has published frequently in several key scientific venues, including:

  • Applied Physics Letters
  • Applied Physics Express
  • Japanese Journal of Applied Physics
  • ECS Journal of Solid State Science and Technology
  • Journal of Applied Physics

The scientist's recent publications include:

  • The 2020 UV emitter roadmap, 2020, Journal of Physics D Applied Physics
  • Micro-Light Emitting Diode: From Chips to Applications, 2021, Laser & Photonics Review
  • Experimental observation of high intrinsic thermal conductivity of AlN, 2020, Physical Review Materials
  • Improving the Leakage Characteristics and Efficiency of GaN-based Micro-Light-Emitting Diode with Optimized Passivation, 2020, ECS Journal of Solid State Science and Technology
  • On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR, 2020, Applied Physics Letters

Amano collaborates regularly with a number of frequent coauthors, including Yoshio Honda, Shugo Nitta, Hirotaka Watanabe, Atsushi Tanaka, and Manato Deki. These collaborative efforts contribute to a significant body of work in their respective fields.

Throughout their career, Amano has received various recognitions including election as a Fellow of the National Academy of Inventors in 2017 and membership in the National Academy of Engineering in 2016 for contributions to p-type gallium nitride doping technology facilitating blue semiconductor LEDs. They were also awarded the Nobel Prize in 2014 for the invention of efficient blue light-emitting diodes enabling bright and energy-saving white light sources.

Best Publications

  • Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

    H. Amano;N. Sawaki;I. Akasaki;Y. Toyoda

  • P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

    Hiroshi Amano;Masahiro Kito;Kazumasa Hiramatsu;Isamu Akasaki

  • Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

    Tetsuya Takeuchi;Shigetoshi Sota;Maki Katsuragawa;Miho Komori

  • The 2018 GaN power electronics roadmap

    H Amano;Y Baines;Matteo Borga

  • The emergence and prospects of deep-ultraviolet light-emitting diode technologies

    Michael Kneissl;Michael Kneissl;Tae Yeon Seong;Jung Han;Hiroshi Amano

  • Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

    Isamu Akasaki;Hiroshi Amano;Yasuo Koide;Kazumasa Hiramatsu

  • Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters

    Isamu Akasaki;Hiroshi Amano

  • Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.

    Shigefusa F. Chichibu;Akira Uedono;Akira Uedono;Takeyoshi Onuma;Benjamin A. Haskell

  • Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect

    Tetsuya Takeuchi;Christian Wetzel;Shigeo Yamaguchi;Hiromitsu Sakai

  • Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells

    Tetsuya Takeuchi;Hiroshi Amano;Isamu Akasaki

  • Shortest wavelength semiconductor laser diode

    I. Akasaki;S. Sota;H. Sakai;T. Tanaka

  • The 2020 UV emitter roadmap

    Hiroshi Amano;Ramón Collazo;Carlo De Santi;Sven Einfeldt

  • Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE

    K. Hiramatsu;S. Itoh;H. Amano;I. Akasaki

  • Fabrication of vertically aligned carbon nanowalls using capacitively coupled plasma-enhanced chemical vapor deposition assisted by hydrogen radical injection

    M. Hiramatsu;K. Shiji;H. Amano;M. Hori

  • Optical Properties of Strained AlGaN and GaInN on GaN

    Tetsuya Takeuchi;Hideo Takeuchi;Shigetoshi Sota;Hiromitsu Sakai

  • Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate

    Hiroshi Amano;Isamu Akasaki;Kazumasa Hiramatsu;Norikatsu Koide

  • Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED

    Isamu Akasaki;Hiroshi Amano;Masahiro Kito;Kazumasa Hiramatsu

  • P-TYPE CONDUCTION IN MG-DOPED GAN AND AL0.08GA0.92N GROWN BY METALORGANIC VAPOR PHASE EPITAXY

    T. Tanaka;A. Watanabe;H. Amano;Y. Kobayashi

  • The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer

    A. Watanabe;T. Takeuchi;K. Hirosawa;H. Amano

  • Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer

    T. Detchprohm;K. Hiramatsu;H. Amano;I. Akasaki

Frequent Co-Authors

Motoaki Iwaya
Motoaki Iwaya Meijo University
Satoshi Kamiyama
Satoshi Kamiyama Meijo University
Bo Monemar
Bo Monemar Linköping University
Tetsuya Takeuchi
Tetsuya Takeuchi Meijo University
Kazumasa Hiramatsu
Kazumasa Hiramatsu Mie University
Theeradetch Detchprohm
Theeradetch Detchprohm Georgia Institute of Technology
Bruno K. Meyer
Bruno K. Meyer University of Giessen
Shigefusa F. Chichibu
Shigefusa F. Chichibu Tohoku University
Fernando Ponce
Fernando Ponce Arizona State University
Tae Yeon Seong
Tae Yeon Seong Korea University

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