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Hiroshi Amano

Hiroshi Amano

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Electronics and Electrical Engineering
Japan
2026
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Materials Science
Japan
2022

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 92 268 261 5 5 1110 45045
Materials Science 97 1182 1132 41 41 1191 47028
Physics 95 1902 1807 48 46 1179 46515

Hiroshi Amano publications per year

The chart shows the history of publications by Hiroshi Amano between 1984 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Hiroshi Amano published across 42 years, from 1984 to 2025, averaging 32.6 papers a year. Output peaked at 90 publications in 2020. 52 of the 1,369 publications appeared in the last two years.

No. of publications
20 40 60 80
Bar chart. Horizontal axis: year, 1984 to 2025. Vertical axis: number of publications, 0 to 90. Peak 90 publications in 2020. 1984: 1 publication 1985: 3 publications 1986: 4 publications 1987: 3 publications 1988: 11 publications 1989: 4 publications 1990: 11 publications 1991: 20 publications 1992: 4 publications 1993: 16 publications 1994: 18 publications 1995: 30 publications 1996: 29 publications 1997: 40 publications 1998: 33 publications 1999: 57 publications 2000: 45 publications 2001: 34 publications 2002: 48 publications 2003: 31 publications 2004: 30 publications 2005: 30 publications 2006: 34 publications 2007: 37 publications 2008: 31 publications 2009: 30 publications 2010: 31 publications 2011: 48 publications 2012: 28 publications 2013: 42 publications 2014: 30 publications 2015: 23 publications 2016: 39 publications 2017: 54 publications 2018: 55 publications 2019: 81 publications 2020: 90 publications 2021: 68 publications 2022: 46 publications 2023: 48 publications 2024: 26 publications 2025: 26 publications
1984 2025

1,369 publications in total across all disciplines

View publications per year as a table
Hiroshi Amano: publications per year, 1984 to 2025
Year Publications
1984 1
1985 3
1986 4
1987 3
1988 11
1989 4
1990 11
1991 20
1992 4
1993 16
1994 18
1995 30
1996 29
1997 40
1998 33
1999 57
2000 45
2001 34
2002 48
2003 31
2004 30
2005 30
2006 34
2007 37
2008 31
2009 30
2010 31
2011 48
2012 28
2013 42
2014 30
2015 23
2016 39
2017 54
2018 55
2019 81
2020 90
2021 68
2022 46
2023 48
2024 26
2025 26
Total 1,369
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Hiroshi Amano publications per year - data summary

  • Hiroshi Amano, a Electronics and Electrical Engineering scholar from Nagoya University, has 1,369 publications recorded across 42 years, from 1984 to 2025.
  • The oldest publication on record dates to 1984 and the most recent to 2025.
  • The most productive year is 2020, with 90 publications.
  • The least productive year with any output is 1984, with 1 publication.
  • The rate of publication averages 32.6 papers per year over the whole span, or 32.6 per year counting only the 42 years with at least one publication.
  • The last 5 years on the chart (2021-2025) hold 214 publications, 16% of the career total.
  • Split into equal eras - 1984-1997: 194 publications (13.9 per year); 1998-2011: 519 publications (37.1 per year); 2012-2025: 656 publications (46.9 per year).
  • Comparing the opening and closing eras, the overall trend of publication is rising.

Hiroshi Amano publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Hiroshi Amano sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 1,065+ publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 1,110 publications — 99th percentile

99% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99 1,110
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Hiroshi Amano publication distribution in Electronics and Electrical Engineering in 2026 - data summary

  • The chart plots the publication count of all 6,875 Electronics and Electrical Engineering scientists ranked by Research.com in 2026, grouped into 53 ranges running from 34–53 to 1,065+ publications.
  • Hiroshi Amano, a Electronics and Electrical Engineering scholar from Nagoya University, records 1,110 publications - the 99th percentile of the discipline.
  • 99% of ranked Electronics and Electrical Engineering scientists score the same or lower than Hiroshi Amano, and about 1% score higher.
  • The median of the discipline falls in the 254–273 publications range, and Hiroshi Amano ranks above the median.
  • The most crowded range is 174–193 publications, holding 445 scientists (6% of the field).
  • 60% of the field sits in the lowest quarter of the value range (up to 294–313 publications), so the distribution is heavily right-skewed and high scores are rare.
  • The final bar has no upper bound: it groups every scientist with 1,065 publications or more, 99 scientists in all (1% of the field).

Hiroshi Amano D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Hiroshi Amano sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 92 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 92 D-Index — 96th percentile

96% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14 92
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Hiroshi Amano D-index placement in Electronics and Electrical Engineering in 2026 - data summary

  • The chart plots the discipline H-index (D-index) of all 6,875 Electronics and Electrical Engineering scientists ranked by Research.com in 2026, grouped into 82 ranges running from 30 to 111+ D-Index.
  • Hiroshi Amano, a Electronics and Electrical Engineering scholar from Nagoya University, records 92 D-Index - the 96th percentile of the discipline.
  • 96% of ranked Electronics and Electrical Engineering scientists score the same or lower than Hiroshi Amano, and about 4% score higher.
  • The median of the discipline falls in the 46 D-Index range, and Hiroshi Amano ranks above the median.
  • The most crowded range is 32 D-Index, holding 263 scientists (4% of the field).
  • 60% of the field sits in the lowest quarter of the value range (up to 50 D-Index), so the distribution is heavily right-skewed and high scores are rare.
  • The final bar has no upper bound: it groups every scientist with 111 D-Index or more, 96 scientists in all (1% of the field).

Research.com Recognitions

  • 2026 - Research.com Electronics and Electrical Engineering in Japan Leader Award
  • 2025 - Research.com Electronics and Electrical Engineering in Japan Leader Award
  • 2023 - Research.com Electronics and Electrical Engineering in Japan Leader Award
  • 2022 - Research.com Electronics and Electrical Engineering in Japan Leader Award
  • 2022 - Research.com Materials Science in Japan Leader Award
  • 2017 - Fellow, National Academy of Inventors
  • 2016 - Member of the National Academy of Engineering For development of p-type gallium nitride (GaN) doping, enabling blue semiconductor LEDs.
  • 2014 - Nobel Prize for the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources

Overview

Hiroshi Amano is affiliated with Nagoya University in Japan and specializes in research areas intersecting physics, engineering, and materials science. Their scholarly output includes extensive work in subfields such as condensed matter physics, electrical and electronic engineering, electronic, optical and magnetic materials, atomic and molecular physics and optics, as well as materials chemistry.

The research topics covered by Amano prominently feature GaN-based semiconductor devices and materials, Ga2O3 and related materials, semiconductor materials and devices, semiconductor quantum structures and devices, ZnO doping and properties, photocathodes and microchannel plates, and metal and thin film mechanics.

Amano has published frequently in several key scientific venues, including:

  • Applied Physics Letters
  • Applied Physics Express
  • Japanese Journal of Applied Physics
  • ECS Journal of Solid State Science and Technology
  • Journal of Applied Physics

The scientist's recent publications include:

  • The 2020 UV emitter roadmap, 2020, Journal of Physics D Applied Physics
  • Micro-Light Emitting Diode: From Chips to Applications, 2021, Laser & Photonics Review
  • Experimental observation of high intrinsic thermal conductivity of AlN, 2020, Physical Review Materials
  • Improving the Leakage Characteristics and Efficiency of GaN-based Micro-Light-Emitting Diode with Optimized Passivation, 2020, ECS Journal of Solid State Science and Technology
  • On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR, 2020, Applied Physics Letters

Amano collaborates regularly with a number of frequent coauthors, including Yoshio Honda, Shugo Nitta, Hirotaka Watanabe, Atsushi Tanaka, and Manato Deki. These collaborative efforts contribute to a significant body of work in their respective fields.

Throughout their career, Amano has received various recognitions including election as a Fellow of the National Academy of Inventors in 2017 and membership in the National Academy of Engineering in 2016 for contributions to p-type gallium nitride doping technology facilitating blue semiconductor LEDs. They were also awarded the Nobel Prize in 2014 for the invention of efficient blue light-emitting diodes enabling bright and energy-saving white light sources.

Best Publications

  • Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

    H. Amano;N. Sawaki;I. Akasaki;Y. Toyoda

  • P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

    Hiroshi Amano;Masahiro Kito;Kazumasa Hiramatsu;Isamu Akasaki

  • Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

    Tetsuya Takeuchi;Shigetoshi Sota;Maki Katsuragawa;Miho Komori

  • The 2018 GaN power electronics roadmap

    H Amano;Y Baines;Matteo Borga

  • The emergence and prospects of deep-ultraviolet light-emitting diode technologies

    Michael Kneissl;Michael Kneissl;Tae Yeon Seong;Jung Han;Hiroshi Amano

  • Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

    Isamu Akasaki;Hiroshi Amano;Yasuo Koide;Kazumasa Hiramatsu

  • Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters

    Isamu Akasaki;Hiroshi Amano

  • Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.

    Shigefusa F. Chichibu;Akira Uedono;Akira Uedono;Takeyoshi Onuma;Benjamin A. Haskell

  • Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect

    Tetsuya Takeuchi;Christian Wetzel;Shigeo Yamaguchi;Hiromitsu Sakai

  • Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells

    Tetsuya Takeuchi;Hiroshi Amano;Isamu Akasaki

  • Shortest wavelength semiconductor laser diode

    I. Akasaki;S. Sota;H. Sakai;T. Tanaka

  • The 2020 UV emitter roadmap

    Hiroshi Amano;Ramón Collazo;Carlo De Santi;Sven Einfeldt

  • Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE

    K. Hiramatsu;S. Itoh;H. Amano;I. Akasaki

  • Fabrication of vertically aligned carbon nanowalls using capacitively coupled plasma-enhanced chemical vapor deposition assisted by hydrogen radical injection

    M. Hiramatsu;K. Shiji;H. Amano;M. Hori

  • Optical Properties of Strained AlGaN and GaInN on GaN

    Tetsuya Takeuchi;Hideo Takeuchi;Shigetoshi Sota;Hiromitsu Sakai

  • Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate

    Hiroshi Amano;Isamu Akasaki;Kazumasa Hiramatsu;Norikatsu Koide

  • Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED

    Isamu Akasaki;Hiroshi Amano;Masahiro Kito;Kazumasa Hiramatsu

  • P-TYPE CONDUCTION IN MG-DOPED GAN AND AL0.08GA0.92N GROWN BY METALORGANIC VAPOR PHASE EPITAXY

    T. Tanaka;A. Watanabe;H. Amano;Y. Kobayashi

  • The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer

    A. Watanabe;T. Takeuchi;K. Hirosawa;H. Amano

  • Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer

    T. Detchprohm;K. Hiramatsu;H. Amano;I. Akasaki

Frequent Co-Authors

Motoaki Iwaya
Motoaki Iwaya Meijo University
Satoshi Kamiyama
Satoshi Kamiyama Meijo University
Bo Monemar
Bo Monemar Linköping University
Tetsuya Takeuchi
Tetsuya Takeuchi Meijo University
Kazumasa Hiramatsu
Kazumasa Hiramatsu Mie University
Theeradetch Detchprohm
Theeradetch Detchprohm Georgia Institute of Technology
Bruno K. Meyer
Bruno K. Meyer University of Giessen
Shigefusa F. Chichibu
Shigefusa F. Chichibu Tohoku University
Fernando Ponce
Fernando Ponce Arizona State University
Tae Yeon Seong
Tae Yeon Seong Korea University

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