H-Index & Metrics Top Publications

H-Index & Metrics

Discipline name H-index Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering H-index 75 Citations 28,372 513 World Ranking 188 National Ranking 4
Materials Science H-index 85 Citations 34,505 749 World Ranking 798 National Ranking 31

Research.com Recognitions

Awards & Achievements

2017 - Fellow, National Academy of Inventors

2016 - Member of the National Academy of Engineering For development of p-type gallium nitride (GaN) doping, enabling blue semiconductor LEDs.

2014 - Nobel Prize for the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Optics
  • Optoelectronics

Hiroshi Amano focuses on Optoelectronics, Epitaxy, Sapphire, Photoluminescence and Layer. His Optoelectronics research is multidisciplinary, incorporating elements of Nitride, Metalorganic vapour phase epitaxy and Optics. The study incorporates disciplines such as Luminescence, Analytical chemistry, Crystallography, Dislocation and Mineralogy in addition to Epitaxy.

His study in Sapphire is interdisciplinary in nature, drawing from both Wide-bandgap semiconductor and Stress. His work carried out in the field of Photoluminescence brings together such families of science as Hydride and Condensed matter physics, Exciton, Doping, Band gap. His Layer research integrates issues from Single crystal and Buffer.

His most cited work include:

  • Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer (1765 citations)
  • P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI) (1524 citations)
  • Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells (951 citations)

What are the main themes of his work throughout his whole career to date?

The scientist’s investigation covers issues in Optoelectronics, Epitaxy, Metalorganic vapour phase epitaxy, Photoluminescence and Sapphire. His study looks at the relationship between Optoelectronics and fields such as Layer, as well as how they intersect with chemical problems. His research in Epitaxy focuses on subjects like Crystallography, which are connected to Transmission electron microscopy.

Hiroshi Amano has researched Metalorganic vapour phase epitaxy in several fields, including Cathodoluminescence and Chemical vapor deposition. His research investigates the connection with Photoluminescence and areas like Doping which intersect with concerns in Acceptor. The Light-emitting diode study combines topics in areas such as Wavelength, Gallium nitride, Ultraviolet and Quantum efficiency.

He most often published in these fields:

  • Optoelectronics (60.36%)
  • Epitaxy (25.27%)
  • Metalorganic vapour phase epitaxy (17.18%)

What were the highlights of his more recent work (between 2017-2021)?

  • Optoelectronics (60.36%)
  • Diode (12.09%)
  • Light-emitting diode (13.36%)

In recent papers he was focusing on the following fields of study:

His primary scientific interests are in Optoelectronics, Diode, Light-emitting diode, Epitaxy and Analytical chemistry. His studies in Optoelectronics integrate themes in fields like Layer, Gallium nitride and Substrate. His research integrates issues of Breakdown voltage and Band gap in his study of Diode.

His Light-emitting diode study combines topics from a wide range of disciplines, such as Wavelength, Electroluminescence and Quantum efficiency. His work on Metalorganic vapour phase epitaxy as part of general Epitaxy study is frequently linked to Vapor phase, bridging the gap between disciplines. His Analytical chemistry research integrates issues from Sapphire, Doping and Nitride.

Between 2017 and 2021, his most popular works were:

  • The 2018 GaN power electronics roadmap (355 citations)
  • The emergence and prospects of deep-ultraviolet light-emitting diode technologies (247 citations)
  • A 271.8 nm deep-ultraviolet laser diode for room temperature operation (69 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Optics
  • Optoelectronics

Hiroshi Amano mostly deals with Optoelectronics, Diode, Light-emitting diode, Epitaxy and Metalorganic vapour phase epitaxy. His Optoelectronics research is multidisciplinary, incorporating elements of Quantum well, Substrate and Electroluminescence. His study on Reverse leakage current is often connected to Ultraviolet light as part of broader study in Diode.

His biological study spans a wide range of topics, including Distributed Bragg reflector, Cathodoluminescence, Hue and Quantum efficiency. Within one scientific family, he focuses on topics pertaining to Photoluminescence under Epitaxy, and may sometimes address concerns connected to Nanorod. His research on Metalorganic vapour phase epitaxy also deals with topics like

  • Analytical chemistry, which have a strong connection to Sapphire, Indium, Nitride and Wafer,
  • Schottky barrier which connect with Schottky diode.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Top Publications

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

H. Amano;N. Sawaki;I. Akasaki;Y. Toyoda.
Applied Physics Letters (1986)

2885 Citations

P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

Hiroshi Amano;Masahiro Kito;Kazumasa Hiramatsu;Isamu Akasaki.
Japanese Journal of Applied Physics (1989)

2558 Citations

Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

Tetsuya Takeuchi;Shigetoshi Sota;Maki Katsuragawa;Miho Komori.
Japanese Journal of Applied Physics (1997)

1349 Citations

Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

Isamu Akasaki;Hiroshi Amano;Yasuo Koide;Kazumasa Hiramatsu.
Journal of Crystal Growth (1989)

1051 Citations

Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters

Isamu Akasaki;Hiroshi Amano.
Japanese Journal of Applied Physics (1997)

769 Citations

Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect

Tetsuya Takeuchi;Christian Wetzel;Shigeo Yamaguchi;Hiromitsu Sakai.
Applied Physics Letters (1998)

738 Citations

Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.

Shigefusa F. Chichibu;Akira Uedono;Akira Uedono;Takeyoshi Onuma;Benjamin A. Haskell.
Nature Materials (2006)

717 Citations

Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells

Tetsuya Takeuchi;Hiroshi Amano;Isamu Akasaki.
Japanese Journal of Applied Physics (2000)

598 Citations

Shortest wavelength semiconductor laser diode

I. Akasaki;S. Sota;H. Sakai;T. Tanaka.
Electronics Letters (1996)

561 Citations

Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE

K. Hiramatsu;S. Itoh;H. Amano;I. Akasaki.
Journal of Crystal Growth (1991)

414 Citations

Profile was last updated on December 6th, 2021.
Research.com Ranking is based on data retrieved from the Microsoft Academic Graph (MAG).
The ranking h-index is inferred from publications deemed to belong to the considered discipline.

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