2017 - Fellow, National Academy of Inventors
2016 - Member of the National Academy of Engineering For development of p-type gallium nitride (GaN) doping, enabling blue semiconductor LEDs.
2014 - Nobel Prize for the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources
Hiroshi Amano focuses on Optoelectronics, Epitaxy, Sapphire, Photoluminescence and Layer. His Optoelectronics research is multidisciplinary, incorporating elements of Nitride, Metalorganic vapour phase epitaxy and Optics. The study incorporates disciplines such as Luminescence, Analytical chemistry, Crystallography, Dislocation and Mineralogy in addition to Epitaxy.
His study in Sapphire is interdisciplinary in nature, drawing from both Wide-bandgap semiconductor and Stress. His work carried out in the field of Photoluminescence brings together such families of science as Hydride and Condensed matter physics, Exciton, Doping, Band gap. His Layer research integrates issues from Single crystal and Buffer.
The scientist’s investigation covers issues in Optoelectronics, Epitaxy, Metalorganic vapour phase epitaxy, Photoluminescence and Sapphire. His study looks at the relationship between Optoelectronics and fields such as Layer, as well as how they intersect with chemical problems. His research in Epitaxy focuses on subjects like Crystallography, which are connected to Transmission electron microscopy.
Hiroshi Amano has researched Metalorganic vapour phase epitaxy in several fields, including Cathodoluminescence and Chemical vapor deposition. His research investigates the connection with Photoluminescence and areas like Doping which intersect with concerns in Acceptor. The Light-emitting diode study combines topics in areas such as Wavelength, Gallium nitride, Ultraviolet and Quantum efficiency.
His primary scientific interests are in Optoelectronics, Diode, Light-emitting diode, Epitaxy and Analytical chemistry. His studies in Optoelectronics integrate themes in fields like Layer, Gallium nitride and Substrate. His research integrates issues of Breakdown voltage and Band gap in his study of Diode.
His Light-emitting diode study combines topics from a wide range of disciplines, such as Wavelength, Electroluminescence and Quantum efficiency. His work on Metalorganic vapour phase epitaxy as part of general Epitaxy study is frequently linked to Vapor phase, bridging the gap between disciplines. His Analytical chemistry research integrates issues from Sapphire, Doping and Nitride.
Hiroshi Amano mostly deals with Optoelectronics, Diode, Light-emitting diode, Epitaxy and Metalorganic vapour phase epitaxy. His Optoelectronics research is multidisciplinary, incorporating elements of Quantum well, Substrate and Electroluminescence. His study on Reverse leakage current is often connected to Ultraviolet light as part of broader study in Diode.
His biological study spans a wide range of topics, including Distributed Bragg reflector, Cathodoluminescence, Hue and Quantum efficiency. Within one scientific family, he focuses on topics pertaining to Photoluminescence under Epitaxy, and may sometimes address concerns connected to Nanorod. His research on Metalorganic vapour phase epitaxy also deals with topics like
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
H. Amano;N. Sawaki;I. Akasaki;Y. Toyoda.
Applied Physics Letters (1986)
P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
Hiroshi Amano;Masahiro Kito;Kazumasa Hiramatsu;Isamu Akasaki.
Japanese Journal of Applied Physics (1989)
Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
Tetsuya Takeuchi;Shigetoshi Sota;Maki Katsuragawa;Miho Komori.
Japanese Journal of Applied Physics (1997)
Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
Isamu Akasaki;Hiroshi Amano;Yasuo Koide;Kazumasa Hiramatsu.
Journal of Crystal Growth (1989)
Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
Isamu Akasaki;Hiroshi Amano.
Japanese Journal of Applied Physics (1997)
Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect
Tetsuya Takeuchi;Christian Wetzel;Shigeo Yamaguchi;Hiromitsu Sakai.
Applied Physics Letters (1998)
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.
Shigefusa F. Chichibu;Akira Uedono;Akira Uedono;Takeyoshi Onuma;Benjamin A. Haskell.
Nature Materials (2006)
Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells
Tetsuya Takeuchi;Hiroshi Amano;Isamu Akasaki.
Japanese Journal of Applied Physics (2000)
Shortest wavelength semiconductor laser diode
I. Akasaki;S. Sota;H. Sakai;T. Tanaka.
Electronics Letters (1996)
Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE
K. Hiramatsu;S. Itoh;H. Amano;I. Akasaki.
Journal of Crystal Growth (1991)
Profile was last updated on December 6th, 2021.
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