Bo Monemar

Overview

Best Publications

• Fundamental energy gap of GaN from photoluminescence excitation spectra

  B. Monemar

  1034
  Citations

• Infrared dielectric functions and phonon modes of high-quality ZnO films

  N. Ashkenov;B.N. Mbenkum;C. Bundesmann;V. Riede

  791
  Citations

• Homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy

  Hisashi Murakami;Kazushiro Nomura;Ken Goto;Kohei Sasaki

  425
  Citations

• Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide vapor phase epitaxy

  Masataka Higashiwaki;Keita Konishi;Kohei Sasaki;Ken Goto

  398
  Citations

• Synthesis and Applications of III-V Nanowires

  Enrique Barrigón;Magnus Heurlin;Zhaoxia Bi;Bo Monemar

  352
  Citations

• Defect related issues in the current roll-off in InGaN based light emitting diodes

  B. Monemar;B. E. Sernelius

  352
  Citations

• Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy

  I. A. Buyanova;W. M. Chen;G. Pozina;J. P. Bergman

  324
  Citations

• Mie Resonances, Infrared Emission, and the Band Gap of InN

  T. V. Shubina;S. V. Ivanov;V. N. Jmerik;D. D. Solnyshkov

  281
  Citations

• Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition

  Plamen Paskov;R. Schifano;Bo Monemar;T. Paskova

  270
  Citations

• Luminescence in epitaxial GaN : Cd

  O. Lagerstedt;B. Monemar

  255
  Citations

• Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β-gallium oxide single crystals

  M. Schubert;M. Schubert;R. Korlacki;S. Knight;T. Hofmann;T. Hofmann

  246
  Citations

• Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels

  B Arnaudov;Tanja Paskova;Plamen Paskov;Björn Magnusson

  240
  Citations

• Electronic Properties of Ga(In)NAs Alloys

  Irina Buyanova;Weimin Chen;Bo Monemar

  237
  Citations

• Electronic structure of the GaAs:MnGa center

  M. Linnarsson;Erik Janzén;Bo Monemar;M. Kleverman

  225
  Citations

• Spatially resolved Hall effect measurement in a single semiconductor nanowire

  Kristian Storm;Filip Halvardsson;Magnus Heurlin;David Lindgren

  219
  Citations

• Halide vapor phase epitaxy of Si doped β-Ga2O3 and its electrical properties

  Ken Goto;Keita Konishi;Hisashi Murakami;Yoshinao Kumagai

  206
  Citations

• Properties of Zn‐doped VPE‐grown GaN. I. Luminescence data in relation to doping conditions

  B. Monemar;O. Lagerstedt;H. P. Gislason

  205
  Citations

• Band-to-band transitions, selection rules, effective mass, and excitonic contributions in monoclinic β − Ga 2 O 3

  Alyssa Mock;Rafał Korlacki;Chad Briley;Vanya Darakchieva

  203
  Citations

• Two-dimensional electron gas density in Al1-xInxN/AlN/GaN heterostructures (0.03 <= x <= 0.23)

  M. Gonschorek;J.-F. Carlin;E. Feltin;M. A. Py

  189
  Citations

• Some optical properties of the AlxGa1−xAs alloys system

  Unknown

  180
  Citations

• Electron effective masses in 4H SiC

  N. T. Son;W. M. Chen;O. Kordina;A. O. Konstantinov

  160
  Citations

• Evidence for Two Mg Related Acceptors in GaN

  Bo Monemar;Bo Monemar;P. P. Paskov;G. Pozina;C. Hemmingsson

  158
  Citations

• Group III-nitride based hetero and quantum structures

  Bo Monemar;Galia Pozina

  151
  Citations

• Fundamental Energy Gaps of AlAs and Alp from Photoluminescence Excitation Spectra

  Unknown

  145
  Citations