Bo Monemar mostly deals with Photoluminescence, Optoelectronics, Epitaxy, Exciton and Condensed matter physics. His Photoluminescence study incorporates themes from Doping, Cathodoluminescence, Spectral line, Atomic physics and Band gap. His Epitaxy study combines topics from a wide range of disciplines, such as Sapphire, Halide, X-ray crystallography and Analytical chemistry.
The study incorporates disciplines such as Layer, Morphology, Impurity and Diffraction in addition to Analytical chemistry. His study in Exciton is interdisciplinary in nature, drawing from both Quantum well, Excited state, Radiative transfer and Spectroscopy. The Condensed matter physics study combines topics in areas such as Effective mass, Electron, Monoclinic crystal system and Anisotropy.
His main research concerns Photoluminescence, Exciton, Optoelectronics, Condensed matter physics and Atomic physics. His Photoluminescence research is classified as research in Analytical chemistry. His Analytical chemistry research is multidisciplinary, incorporating elements of Hydride vapour phase epitaxy, Epitaxy and Impurity.
The various areas that Bo Monemar examines in his Exciton study include Spectral line, Photoluminescence excitation, Electronic structure and Acceptor. His Optoelectronics study integrates concerns from other disciplines, such as Molecular beam epitaxy and Metalorganic vapour phase epitaxy. The study incorporates disciplines such as Quantum dot and Electron in addition to Condensed matter physics.
His primary areas of investigation include Optoelectronics, Photoluminescence, Epitaxy, Condensed matter physics and Analytical chemistry. He has included themes like Metalorganic vapour phase epitaxy, Exciton, Quantum well, Molecular physics and Spectral line in his Photoluminescence study. The various areas that Bo Monemar examines in his Exciton study include Spectroscopy and Resonance, Binding energy, Atomic physics.
His studies deal with areas such as Sapphire, Halide, Crystallography and Impurity as well as Epitaxy. As a member of one scientific family, Bo Monemar mostly works in the field of Condensed matter physics, focusing on Effective mass and, on occasion, Hall effect. His biological study spans a wide range of topics, including Gallium nitride, Doping and Conductivity.
Bo Monemar mainly focuses on Optoelectronics, Analytical chemistry, Epitaxy, Doping and Condensed matter physics. Optoelectronics and Exciton are commonly linked in his work. Bo Monemar studies Analytical chemistry, focusing on Photoluminescence in particular.
The Epitaxy study combines topics in areas such as Secondary ion mass spectrometry, Halide, Crystallographic defect, Diffraction and Sapphire. His work carried out in the field of Doping brings together such families of science as Nanotechnology, Luminescence, Annealing, Hall effect and Electron. His Condensed matter physics research is multidisciplinary, incorporating perspectives in Boltzmann distribution, Anisotropy, Curse of dimensionality and Monoclinic crystal system.
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Fundamental energy gap of GaN from photoluminescence excitation spectra
B. Monemar.
Physical Review B (1974)
Infrared dielectric functions and phonon modes of high-quality ZnO films
N. Ashkenov;B.N. Mbenkum;C. Bundesmann;V. Riede.
Journal of Applied Physics (2003)
Defect related issues in the current roll-off in InGaN based light emitting diodes
B. Monemar;B. E. Sernelius.
Applied Physics Letters (2007)
Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy
I. A. Buyanova;W. M. Chen;G. Pozina;J. P. Bergman.
Applied Physics Letters (1999)
Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide vapor phase epitaxy
Masataka Higashiwaki;Keita Konishi;Kohei Sasaki;Ken Goto.
Applied Physics Letters (2016)
Homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy
Hisashi Murakami;Kazushiro Nomura;Ken Goto;Kohei Sasaki.
Applied Physics Express (2015)
Mie Resonances, Infrared Emission, and the Band Gap of InN
T. V. Shubina;S. V. Ivanov;V. N. Jmerik;D. D. Solnyshkov.
Physical Review Letters (2004)
Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition
Plamen Paskov;R. Schifano;Bo Monemar;T. Paskova.
Journal of Applied Physics (2005)
Luminescence in epitaxial GaN : Cd
O. Lagerstedt;B. Monemar.
Journal of Applied Physics (1974)
Electronic Properties of Ga(In)NAs Alloys
Irina Buyanova;Weimin Chen;Bo Monemar.
Mrs Internet Journal of Nitride Semiconductor Research (2001)
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