Bo Monemar

Bo Monemar publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Bo Monemar sits on this spectrum.

Bo Monemar D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Bo Monemar sits on this spectrum.

Overview

Best Publications

• Fundamental energy gap of GaN from photoluminescence excitation spectra

  B. Monemar

  1034
  Citations

• Infrared dielectric functions and phonon modes of high-quality ZnO films

  N. Ashkenov;B.N. Mbenkum;C. Bundesmann;V. Riede

  791
  Citations

• Homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy

  Hisashi Murakami;Kazushiro Nomura;Ken Goto;Kohei Sasaki

  425
  Citations

• Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide vapor phase epitaxy

  Masataka Higashiwaki;Keita Konishi;Kohei Sasaki;Ken Goto

  398
  Citations

• Synthesis and Applications of III-V Nanowires

  Enrique Barrigón;Magnus Heurlin;Zhaoxia Bi;Bo Monemar

  352
  Citations

• Defect related issues in the current roll-off in InGaN based light emitting diodes

  B. Monemar;B. E. Sernelius

  352
  Citations

• Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy

  I. A. Buyanova;W. M. Chen;G. Pozina;J. P. Bergman

  324
  Citations

• Mie Resonances, Infrared Emission, and the Band Gap of InN

  T. V. Shubina;S. V. Ivanov;V. N. Jmerik;D. D. Solnyshkov

  281
  Citations

• Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition

  Plamen Paskov;R. Schifano;Bo Monemar;T. Paskova

  270
  Citations

• Luminescence in epitaxial GaN : Cd

  O. Lagerstedt;B. Monemar

  255
  Citations

• Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β-gallium oxide single crystals

  M. Schubert;M. Schubert;R. Korlacki;S. Knight;T. Hofmann;T. Hofmann

  246
  Citations

• Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels

  B Arnaudov;Tanja Paskova;Plamen Paskov;Björn Magnusson

  240
  Citations

• Electronic Properties of Ga(In)NAs Alloys

  Irina Buyanova;Weimin Chen;Bo Monemar

  237
  Citations

• Electronic structure of the GaAs:MnGa center

  M. Linnarsson;Erik Janzén;Bo Monemar;M. Kleverman

  225
  Citations

• Spatially resolved Hall effect measurement in a single semiconductor nanowire

  Kristian Storm;Filip Halvardsson;Magnus Heurlin;David Lindgren

  219
  Citations

• Halide vapor phase epitaxy of Si doped β-Ga2O3 and its electrical properties

  Ken Goto;Keita Konishi;Hisashi Murakami;Yoshinao Kumagai

  206
  Citations

• Properties of Zn‐doped VPE‐grown GaN. I. Luminescence data in relation to doping conditions

  B. Monemar;O. Lagerstedt;H. P. Gislason

  205
  Citations

• Band-to-band transitions, selection rules, effective mass, and excitonic contributions in monoclinic β − Ga 2 O 3

  Alyssa Mock;Rafał Korlacki;Chad Briley;Vanya Darakchieva

  203
  Citations

• Two-dimensional electron gas density in Al1-xInxN/AlN/GaN heterostructures (0.03 <= x <= 0.23)

  M. Gonschorek;J.-F. Carlin;E. Feltin;M. A. Py

  189
  Citations

• Some optical properties of the AlxGa1−xAs alloys system

  Unknown

  180
  Citations

• Electron effective masses in 4H SiC

  N. T. Son;W. M. Chen;O. Kordina;A. O. Konstantinov

  160
  Citations

• Evidence for Two Mg Related Acceptors in GaN

  Bo Monemar;Bo Monemar;P. P. Paskov;G. Pozina;C. Hemmingsson

  158
  Citations

• Group III-nitride based hetero and quantum structures

  Bo Monemar;Galia Pozina

  151
  Citations

• Fundamental Energy Gaps of AlAs and Alp from Photoluminescence Excitation Spectra

  Unknown

  145
  Citations